公开(公告)号：US09406840B2

公开(公告)日：2016-08-02

申请号：US14984342

申请日：2015-12-30

Applicant: Sensor Electronic Technology, Inc.

Inventor： Michael Shur ,  Rakesh Jain ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Jinwei Yang ,  Remigijus Gaska ,  Mikhail Gaevski

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/18 ,  H01L33/30 ,  H01L33/32 ,  H01L33/382 ,  H01L2224/14 ,  H01L2933/0016 ,  H01S5/3209 ,  H01S5/3413 ,  H01S5/34333

Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

公开(公告)号：US09404182B2

公开(公告)日：2016-08-02

申请号：US14804401

申请日：2015-07-21

Applicant: Sensor Electronic Technology, Inc.

Inventor： Igor Agafonov ,  Michael Shur ,  Alexander Dobrinsky

IPC: H01L21/00 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/02 ,  H01L21/66

CPC classification number: C23C16/45565 ,  C23C16/45563 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/0254 ,  H01L21/0262 ,  H01L22/12 ,  H01L22/26

Abstract: A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables.

公开(公告)号：US09397260B2

公开(公告)日：2016-07-19

申请号：US13647885

申请日：2012-10-09

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Wenhong Sun ,  Jinwei Yang ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L27/15 ,  H01L31/072 ,  H01L33/22 ,  H01L33/12 ,  H01L33/32 ,  H01L21/02 ,  H01L29/66 ,  H01L29/20 ,  H01L29/34 ,  H01L29/778 ,  H01L33/24

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/02658 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/34 ,  H01L29/66462 ,  H01L29/778 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/24 ,  H01L33/32 ,  H01L2933/0091

Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.

Abstract translation: 提供具有具有用于改善半导体层的生长的图案化表面的层的器件，例如具有高浓度铝的III族氮化物基半导体层。 图案化表面可以包括基本上平坦的顶表面和多个减压区域，例如开口。 基本上平坦的顶表面可以具有小于约0.5纳米的均方根粗糙度，并且应力减小区域可以具有在约0.1微米至约5微米之间的特征尺寸和至少0.2微米的深度。 III族氮化物材料层可以在第一层上生长并且具有至少是应力减小区域的特征尺寸的两倍的厚度。

公开(公告)号：US09349848B2

公开(公告)日：2016-05-24

申请号：US14082998

申请日：2013-11-18

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/06 ,  H01L29/772 ,  H01L23/66 ,  H01L27/06 ,  H01L29/8605 ,  H01P1/15 ,  H01H59/00 ,  H01H1/00 ,  H01L29/20

CPC classification number: H01L29/772 ,  H01H59/0009 ,  H01H2001/0078 ,  H01L23/66 ,  H01L27/0605 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/8605 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/19032 ,  H01L2924/19051 ,  H01L2924/3011 ,  H01P1/15 ,  H01L2924/00

Abstract: A switch includes an input contact and an output contact to a conducting channel. At least one of the input and output contacts is capacitively coupled to the conducting channel. A control contact is located outside of a region between the input and output contacts, and can be used to adjust the switch between on and off operating states. The switch can be implemented as a radio frequency switch in a circuit.

公开(公告)号：US09337387B2

公开(公告)日：2016-05-10

申请号：US14297656

申请日：2014-06-06

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/62 ,  H01L33/22 ,  G06F17/50 ,  F21V5/00 ,  H01L33/20 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/22 ,  F21V5/002 ,  G06F17/5009 ,  G06F17/5045 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L2933/0058 ,  H01L2933/0083 ,  Y10T29/49

Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The set of large roughness components can include a series of truncated shapes. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

Abstract translation: 提供了用于改善辐射通过界面的传播的异型表面。 成形表面包括一组大的粗糙度部件，其提供成型表面的第一变化，其特征标度比辐射的目标波长大大大大约一个数量级。 该组粗糙度较大的部件可包括一系列截头形状。 成形表面还包括一​​组小的粗糙度部件，叠加在该组粗糙度较大的部件上，并提供具有辐射目标波长级的特征刻度的成型表面的第二变型。

公开(公告)号：US09330906B2

公开(公告)日：2016-05-03

申请号：US14266900

申请日：2014-05-01

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Jinwei Yang ,  Wenhong Sun ,  Rakesh Jain ,  Michael Shur ,  Remigijus Gaska

IPC: H01L31/00 ,  H01L21/02 ,  H01L29/20 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L29/158 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/007 ,  H01L33/12

Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.

公开(公告)号：US20160118531A1

公开(公告)日：2016-04-28

申请号：US14944538

申请日：2015-11-18

Applicant: Sensor Electronic Technology, Inc.

Inventor： Rakesh Jain ,  Maxim S. Shatalov ,  Jinwei Yang ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/00 ,  H01L33/14

CPC classification number: H01L33/002 ,  H01L31/022408 ,  H01L31/035236 ,  H01L31/105 ,  H01L33/0062 ,  H01L33/025 ,  H01L33/04 ,  H01L33/145 ,  H01L33/32 ,  H01L2933/0008

Abstract: An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The p-type contact layer and electron blocking layer can be doped with a p-type dopant. The dopant concentration for the electron blocking layer can be at most ten percent the dopant concentration of the p-type contact layer. A method of designing such a heterostructure is also described.

公开(公告)号：US09312347B2

公开(公告)日：2016-04-12

申请号：US14576310

申请日：2014-12-19

Applicant: Sensor Electronic Technology, Inc.

Inventor： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC: H01L29/02 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L29/872 ,  H01L29/06 ,  H01L29/20

CPC classification number: H01L29/404 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/405 ,  H01L29/41725 ,  H01L29/42368 ,  H01L29/7786 ,  H01L29/872

Abstract: A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located between a first terminal, such as a gate or a cathode, and a second terminal, such as a drain or an anode, of the device. The circuit includes a biasing network, which supplies an individual bias voltage to each of the set of space-charge control electrodes. The bias voltage for each space-charge control electrode can be: selected based on the bias voltages of each of the terminals and a location of the space-charge control electrode relative to the terminals and/or configured to deplete a region of the channel under the corresponding space-charge control electrode at an operating voltage applied to the second terminal.

公开(公告)号：US20160093771A1

公开(公告)日：2016-03-31

申请号：US14660125

申请日：2015-03-17

Applicant: Sensor Electronic Technology, Inc.

Inventor： Maxim S. Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC: H01L33/32 ,  G06F17/50 ,  H01L33/22 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L33/22 ,  G06F17/5068 ,  G06F2217/12 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02617 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2224/16225

Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns. One or more of the substantially flat top surfaces can be patterned based on target radiation.

Abstract translation: 提供了用于改善半导体层的生长的图案化表面，例如III族氮化物基半导体层。 图案化表面可以包括一组基本平坦的顶表面和多个开口。 每个基本上平坦的顶表面可以具有小于约0.5纳米的均方根粗糙度，并且开口可以具有在约0.1微米和5微米之间的特征尺寸。 基本平坦的顶表面中的一个或多个可以基于目标辐射进行图案化。

公开(公告)号：US20160074548A1

公开(公告)日：2016-03-17

申请号：US14853075

申请日：2015-09-14

Applicant: SENSOR ELECTRONIC TECHNOLOGY, INC.

Inventor： Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC: A61L2/10 ,  F21V7/00

CPC classification number: A61L2/10 ,  A61L2/00 ,  A61L2/088 ,  A61L9/00 ,  A61L2209/11 ,  F21V7/0091 ,  G02B6/00 ,  G02B6/0003 ,  G02B6/0051 ,  G02B6/006

Abstract: A diffusive illuminator is provided. The diffusive illuminator includes a set of light sources and a light guiding structure including a plurality of layers. At least some of the layers can be formed of a fluoropolymer and at least one layer can be formed of a transparent fluid. The light guiding structure also includes an emission surface through which diffused light exits. The light guiding structure can further include diffusive elements associated with at least one of the plurality of layers. Each diffusive element can diffuse the light to within forty percent of Lambertian distribution. The diffusive elements can be arranged based on a desired uniformity of the diffused light at a target distance corresponding to a surface to be illuminated. The diffusive illuminator can emit ultraviolet light, and can be implemented as part of a disinfection system.

Abstract translation: 提供漫射照明器。 扩散照明器包括一组光源和包括多个层的导光结构。 至少一些层可以由氟聚合物形成，并且至少一层可以由透明流体形成。 导光结构还包括散射光通过其射出的发射表面。 导光结构还可以包括与多个层中的至少一个相关联的扩散元件。 每个漫射元件可将光扩散到朗伯分布的百分之四十以内。 扩散元件可以基于对应于待照射表面的目标距离处的漫射光的期望均匀性来布置。 扩散照明器可以发射紫外线，并且可以作为消毒系统的一部分实现。