Abstract:
A semiconductor device and a fabrication method thereof are provided. A semiconductor substrate having a plurality of bonding pads is prepared, and a first passivation layer, a second passivation layer and a metallic layer are successively formed on the semiconductor substrate. A third passivation layer is further applied on the semiconductor substrate and has a plurality of openings for exposing a portion of the metallic layer, wherein each of the openings is shifted in position from a corresponding one of the bonding pads by a distance not exceeding a radius of the bonding pad. A plurality of solder bumps are bonded to the exposed portion of the metallic layer and have a larger contact area with the third passivation layer. This provides better buffer to reduce stress exerted on the solder bumps, thereby preventing problems of cracking and delamination as in the prior art.
Abstract:
A sensor-type package and a fabrication method thereof are provided. A sensor-type chip is mounted on a substrate and is electrically connected to the substrate via bonding wires. A light-pervious body is attached to the sensor-type chip, and has one surface covered with a covering layer and another surface formed with an adhesive layer. An encapsulant encapsulates the light-pervious body. As an adhesive force between the covering layer and the encapsulant is greater than that between the covering layer and the light-pervious body, the covering layer and a portion of the encapsulant located on the covering layer can be concurrently removed, such that the light-pervious body is exposed and light can pass through the light-pervious body to be captured by the sensor-type chip. The above arrangement eliminates the need of using a dam structure as in the prior art and provides a compact sensor-type package with improved fabrication reliability.
Abstract:
A method for fabricating semiconductor packages is proposed. A plurality of substrates each having a chip thereon are prepared. Each substrate has similar length and width to the predetermined length and width of the semiconductor package. A carrier having a plurality of openings is prepared. Each opening is larger in length and width than the substrate. The substrates are positioned in the corresponding openings, and gaps between the substrates and the carrier are sealed. A molding process is performed to form an encapsulant over each opening to encapsulate the chip. An area on the carrier covered by the encapsulant is larger in length and width than the opening. After performing a mold-releasing process, a plurality of the semiconductor packages are formed by a singulation process to cut along substantially edges of each substrate according to the predetermined size of the semiconductor package. A waste of substrate material is avoided.
Abstract:
A chip-stacked semiconductor package and a method for fabricating the same are proposed. A chip carrier module plate including a plurality of chip carriers, and a heat sink module plate including a plurality of heat sinks are provided, wherein a plurality of through holes are formed around each of the heat sinks. First chips, the heat sink module plate, and second chips are successively stacked on the chip carrier module plate, wherein the second chips are electrically connected to the chip carrier module plate by conductive wires penetrating the through holes of the heat sink module plate. After a molding process is completed, a singulation process can be performed to separate the chip carriers and the heat sinks, and thus individual semiconductor packages for integrating the heat sinks with the stacked chips are fabricated.
Abstract:
A semiconductor package, an array arranged substrate structure for the semiconductor package, and fabrication method of the semiconductor package are disclosed. First, a substrate having a plurality of array arranged substrate units is provided, and electroplating buses are formed between the substrate units. Each substrate unit has a plurality of electrically connecting pads and a plurality of conductive traces for connecting the electrically connecting pads to the electroplating buses such that an electroplating metallic layer can be formed on the electrically connecting pads via the electroplating buses and the conductive traces. Then, slots are further formed between the substrate units for disconnecting connections between the conductive traces and the electroplating buses, thus, enable each of the substrate units to become electrically independent from each other for a pre-proceeding electrical O/S test. Moreover, the slots are filled with a filling material such as an insulating gel or an encapsulant during a Molding process. Further, a cutting process is performed between the substrate units through the filling material or encapsulant filling the slots upon completion of encapsulation. Thus, the cutting surface can be kept smooth and exposure of conductive traces from the cutting surface is avoided, thereby preventing static electricity and humidity from adversely affecting the product quality.
Abstract:
A flip-ship semiconductor package with a lead frame as a chip carrier is provided, wherein a plurality of leads of the lead frame are each formed with at least a dam member thereon. When a chip is mounted on the lead frame by means of solder bumps, each of the solder bumps is attached to the corresponding one of the leads at a position between the dam member and an inner end of the lead. During a reflow-soldering process for wetting the solder bumps to the leads, the dam members would help control collapse height of the solder bumps, so as to enhance resistance of the solder bumps to thermal stress generated by CTE (coefficient of thermal expansion) mismatch between the chip and the leads, thereby preventing incomplete electrical connection between the chip and the leads.
Abstract:
A sensor semiconductor device and a method for fabricating the same are proposed. A plurality of metal bumps and a sensor chip are mounted on a substrate. A dielectric layer and a circuit layer are formed on the substrate, wherein the circuit layer is electrically connected to the metal bumps and the sensor chip. Thus, the sensor chip is electrically connected to the substrate via the circuit layer and the metal bumps. The dielectric layer is formed with an opening for exposing a sensor region of the sensor chip. A light-penetrable lid covers the opening of the dielectric layer, such that light is able to penetrate the light-penetrable lid to reach the sensor region and activate the sensor chip. A plurality of solder balls are mounted on a surface of the substrate free of mounting the sensor chip, for electrically connecting the sensor chip to an external device.
Abstract:
A semiconductor package structure and a fabrication method thereof are provided. A semiconductor chip having an active surface and an inactive surface is coupled to a substrate. A plurality of bond pads are formed on the active surface of the semiconductor chip. The substrate can be arranged to expose the bond pads. The semiconductor chip is further attached to a lead frame having a plurality of leads, each of which has an inner portion and an outer portion higher than the inner portion, such that the semiconductor chip can be accommodated in the inner portions of the leads. An encapsulant is formed to cover the semiconductor chip and the substrate, and bottom surfaces of the leads of the lead frame are exposed from the encapsulant, so as to form a thin and compact package structure, which can package various semiconductor chips having different arrangements of bond pads.
Abstract:
A photosensitive semiconductor package, a method for fabricating the same, and a lead frame thereof are proposed. The lead frame has a die pad and a plurality of leads, wherein at least one recessed portion is formed at an end of each lead close to the die pad, and at least one recessed region is formed on the die pad. An encapsulant fills the recessed portions, the recessed region, and between the leads and the die pad, and is formed on the lead frame to define a chip receiving cavity. A photosensitive chip is mounted in the chip receiving cavity, wherein at least partially a non-active surface of the chip is attached to the encapsulant filling the recessed region and is not in contact with the recessed region. A light-penetrable unit is attached to the encapsulant formed on the lead frame to seal the chip receiving cavity.
Abstract:
A semiconductor element with conductive bumps and a fabrication method thereof are provided. The fabrication method includes providing a semiconductor element having a plurality of bond pads formed on an active surface thereof, wherein each of the bond pads has a predetermined bonding area; applying a passivation layer on the active surface, with a plurality of openings formed for exposing the predetermined bonding areas; applying a buffer layer on the passivation layer to cover the predetermined bonding areas; allowing the buffer layer with a plurality of openings to be formed for exposing a portion of the predetermined bonding areas; forming a under bump metallurgy (UBM) layer on the bond pads, allowing the predetermined bonding areas to be completely covered by the UBM layer; and implanting conductive bumps on the UBM layer. The buffer layer advantageously absorbs stresses exerted to the conductive bumps, thereby preventing the conducting bumps from cracking.