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    THERMAL MITIGATION DIE USING BACK SIDE ETCH
    92.
    发明申请
    THERMAL MITIGATION DIE USING BACK SIDE ETCH 有权

    公开(公告)号：US20210375712A1

    公开(公告)日：2021-12-02

    申请号：US16883812

    申请日：2020-05-26

    Applicant: QUALCOMM Incorporated

    Inventor： Aniket PATIL ,  Hong Bok WE ,  Jonghae KIM

    IPC: H01L23/367 ,  H01L21/48 ,  H01L21/3065 ,  H01L23/373

    Abstract: A semiconductor device includes a die having one or more trenches on a back side of the die. The semiconductor device also includes a layer of thermally conductive material deposited on the back side of the die to fill the one or more trenches to form one or more plated trenches. The size (e.g., surface area or thickness (Z-height)) or location of the plated trenches may be determined based on one or more heat generating elements such as logic devices (CPU or GPU, for example) on an active side of the die. The thermally conductive material, which may be a metal such as copper (Cu) or silver (Ag), has a heat dissipation coefficient that is greater than a heat dissipation coefficient of a substrate of the die.

    DEVICE COMPRISING CONTACT TO CONTACT COUPLING OF PACKAGES
    94.
    发明申请
    DEVICE COMPRISING CONTACT TO CONTACT COUPLING OF PACKAGES 有权

    公开(公告)号：US20210280540A1

    公开(公告)日：2021-09-09

    申请号：US16812882

    申请日：2020-03-09

    Applicant: QUALCOMM Incorporated

    Inventor： Jonghae KIM ,  Milind SHAH ,  Periannan CHIDAMBARAM

    IPC: H01L23/00 ,  H01L23/31 ,  H01L23/532 ,  H01L23/64 ,  H01L21/56

    Abstract: A device that includes a first package and a second package coupled to the first package. The first package includes a first integrated device, a first encapsulation layer encapsulating the first integrated device, a plurality of vias traveling through the first encapsulation layer, a first redistribution portion comprising a first plurality of redistribution interconnects, wherein the first redistribution portion is coupled to the first encapsulation layer, and a first plurality of contacts coupled to the first integrated device. The second package includes a passive device, a second encapsulation layer encapsulating the passive device, a second redistribution portion comprising a second plurality of redistribution interconnects, wherein the second redistribution portion is coupled to the passive device and the second encapsulation layer, and a second plurality of contacts coupled to the passive device, wherein the second plurality of contacts is coupled to the first plurality of contacts from the first package.

    TRENCH CAPACITOR COMPONENT WITH REDUCED EQUIVALENT SERIES RESISTANCE AND EQUIVALENT SERIES INDUCTANCE
    95.
    发明申请
    TRENCH CAPACITOR COMPONENT WITH REDUCED EQUIVALENT SERIES RESISTANCE AND EQUIVALENT SERIES INDUCTANCE 有权

    公开(公告)号：US20210242353A1

    公开(公告)日：2021-08-05

    申请号：US16782865

    申请日：2020-02-05

    Applicant: QUALCOMM Incorporated

    Inventor： Jonghae KIM ,  Periannan CHIDAMBARAM

    IPC: H01L29/94 ,  H01L29/66 ,  H01L21/768 ,  H01L27/08 ,  H01L23/522

    Abstract: Certain aspects of the present disclosure generally relate to a capacitive element. One example capacitive element generally includes a substrate, a plurality of trench capacitors, an electrically conductive via, a first electrically conductive contact, and a second electrically conductive contact. The trench capacitors intersect the substrate. The electrically conductive via intersects the substrate and is disposed adjacent to at least one of the trench capacitors. The first electrically conductive contact is disposed above the substrate, and the second electrically conductive contact is disposed below the substrate and electrically coupled to the plurality of trench capacitors through the electrically conductive via.

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