Abstract:
Disclosed herein is a nano device, including: a carbon layer including one-layered graphene having a honeycombed planar structure in which carbon atoms are connected with each other and two or more-layered monocrystalline graphite; and one or more vertically-grown nanostructures formed on the carbon layer. This nano device can be used to manufacture an integrated circuit in which various devices including a graphene electronic device and a photonic device are connected with each other, and is a high-purity and high-quality nano device having a small amount of impurities because a metal catalyst is not used.
Abstract:
A chamber-status monitoring apparatus includes a plurality of chambers, a time-division multiplexer configured to receive, via optical fiber probes, optical signals from each chamber, to divide each optical signal into first time slots having a predetermined duration, and to multiplex the first time slots to generate an OTDM signal, a multi-input optical emission spectroscope configured to receive and disperse the OTDM signal according to wavelengths to measure spectrum information, and a controller configured to divide the spectrum information of the dispersed OTDM signal into second time slots with a predetermined time interval therebetween, to classify the second time slots according to the chambers to obtain spectrum information of the optical signals of the individual chambers, and to control endpoint detection in each of the chambers in accordance with the spectrum information of the optical signal of the corresponding chamber.
Abstract:
Disclosed herein is a nano device, including: a carbon layer including one-layered graphene having a honeycombed planar structure in which carbon atoms are connected with each other and two or more-layered monocrystalline graphite; and one or more vertically-grown nanostructures formed on the carbon layer. This nano device can be used to manufacture an integrated circuit in which various devices including a graphene electronic device and a photonic device are connected with each other, and is a high-purity and high-quality nano device having a small amount of impurities because a metal catalyst is not used.
Abstract:
Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.
Abstract:
Disclosed are a semiconductor device, a light emitting device and a method for manufacturing the same. The semiconductor device includes a substrate, a plurality of rods disposed on the substrate, a plurality of particles disposed between the rods and on the substrate, and a first semiconductor layer disposed on the rods. The method for manufacturing the semiconductor device includes preparing a substrate, disposing a plurality of first particles on the substrate, and forming a plurality of rods by etching a portion of the substrate by using the first particles as an etch mask. The semiconductor device effectively reflects in an upward direction light by the above particles, so that light efficiency is improved. The rods are easily formed by using the first particles.
Abstract:
Provided are a process-parameter prognostic system for predicting the shape of a semiconductor structure, a semiconductor fabrication apparatus having the process-parameter prognostic system, and a method of using the same. The process-parameter prognostic system may have a process prediction unit and a process-change point corresponding unit. The process prediction unit and the process-change point corresponding unit may obtain predicted parameters using measured parameters of semiconductor structures and sensor parameters of plasmas corresponding to the semiconductor structures.
Abstract:
A vibration motor is disclosed. In accordance with an embodiment of the present invention, the vibration motor includes a base, a vibrator, which reciprocates, a coupling part, which is protruded on at least one of the base and the vibrator, and a leaf spring, which includes a frame and an elastic part. Here, the frame is coupled to the coupling part and disposed apart from the base or the vibrator in which the coupling part is formed, and the elastic part is extended from the frame and elastically supports the vibrator. Thus, the leaf spring can be prevented from having concentrated stress and damage occurred, thereby improving the lifetime of the leaf spring.
Abstract:
A plasma display device includes a PDP including discharge cells, address electrodes extending in a first direction and corresponding to the discharge cells, and sustain electrodes and scan electrodes in parallel with each other and crossing the address electrodes in the discharge cells, the sustain electrodes including first terminals and the scan electrodes including second terminals, a chassis base supporting PDP, an integrated board on the chassis base, the chassis base being between the integrated board and the PDP, and an integrated flexible circuit connecting the integrated board to the first terminals of the sustain electrodes and to the second terminals of the scan electrodes, the first terminals of the sustain electrodes and second terminals of the scan electrodes being arranged at a first side of four sides of the PDP.
Abstract:
A process control method includes setting first through fourth conditions, forming a first pattern by performing a first process on a semiconductor wafer, measuring the first pattern using a first measuring equipment to obtain a first result, comparing the first result with the first condition, forming a second pattern by performing a second process on the semiconductor wafer, comparing a period of the second process with the second condition, measuring the second pattern using a second measuring equipment to obtain a second result, comparing the second result with the third condition, forming a third pattern by performing a third process on the semiconductor wafer, measuring the third pattern using the a second measuring equipment to obtain a third result, and comparing the third result with the fourth condition.
Abstract:
A stacked semiconductor module, a method of fabricating the same, and an electronic system using the module are provided. A first semiconductor module having a plurality of semiconductor devices mounted on a rigid printed circuit board (PCB) and a second semiconductor module having a plurality of other semiconductor devices mounted on a flexible PCB are provided. On the rigid PCB a number L of first tabs may be disposed on a first surface, and a number K of second tabs may be disposed on a second surface of the rigid PCB. The flexible PCB may have a number M of third tabs on a third surface, and a number N of fourth tabs on a fourth surface of the flexible PCB. The second tabs may be combined with the third tabs using a conductive adhesive. The third tabs may be electrically connected to corresponding ones of the second tabs.