Process gas supply apparatus
    91.
    发明授权
    Process gas supply apparatus 失效
    工艺气体供应装置

    公开(公告)号:US5730804A

    公开(公告)日:1998-03-24

    申请号:US772570

    申请日:1996-12-26

    Abstract: A process gas supply apparatus according to the invention comprises a supply pipe line connecting a supply source containing an organic aluminum metallic compound in a liquid state, to a process device for forming a film on an object using the organic aluminum metallic compound, a force-feed device for force-feeding, through the supply pipe line, the organic aluminum metallic compound contained in the supply source, a vaporizing device provided across the supply pipe line for vaporizing the force-fed organic aluminum metallic compound of the liquid state, a purge gas introduction device connected to the supply pipe line for introducing a pressurized purge gas into the supply pipe line, a solvent introduction device connected to the supply pipe line for introducing into the supply pipe line a solvent for dissolving the organic aluminum metallic compound, an exhaustion device connected to the supply pipe line for exhausting the supply pipe line by a negative pressure, and a control device having a plurality of valves arranged across the supply pipe line, and controlling the flow of fluids flowing through the supply pipe line by opening and closing the valves.

    Abstract translation: 根据本发明的工艺气体供给装置包括:将含有液态的有机铝金属化合物的供给源与使用有机铝金属化合物在物体上形成膜的处理装置连接的供给管线, 用于强制供给的供给装置,通过供给管线,包含在供给源中的有机铝金属化合物,设置在供给管路两侧的用于使强制供给的液态有机铝金属化合物蒸发的蒸发装置,吹扫 气体引入装置,连接到供给管线,用于将加压的净化气体引入供给管线;溶剂引入装置,连接到供给管线,用于向供给管线引入用于溶解有机铝金属化合物的溶剂, 连接到供给管线的装置,用于通过负压排出供给管线,以及控制装置 e具有跨过供给管线布置的多个阀,并且通过打开和关闭阀来控制流过供给管线的流体的流动。

    Purge feeding means and method
    92.
    发明授权
    Purge feeding means and method 失效
    吹扫装置和方法

    公开(公告)号:US5720854A

    公开(公告)日:1998-02-24

    申请号:US637692

    申请日:1996-04-25

    CPC classification number: B65D88/68 B01J4/00 C10B33/02

    Abstract: A purge chamber for purging oxygen from interlocking, solid material, such as shredded tire pieces, prior to further processing of the material in a liquefaction apparatus. The purge chamber includes a chamber for holding interlocking, solid material An entrance port is connected to the chamber for passing the interlocking, solid material into the chamber. A purge device communicates with the chamber for providing a purging gas to the chamber. An exit port of the chamber passes the interlocking, solid material from the chamber. An auger screw mounted in the chamber, when rotated, moves the interlocking, solid material from within the chamber into the exit port.

    Abstract translation: PCT No.PCT / US94 / 12312 Sec。 371日期:1996年4月25日 102(e)日期1996年4月25日PCT 1994年10月27日PCT PCT。 第WO95 / 12103号PCT公告 日期1995年5月4日在液化装置中进一步处理材料之前,用于从互锁的固体材料(例如切碎的轮胎件)中清除氧气的净化室。 净化室包括用于保持互锁的固体材料的室。入口连接到室,用于将互锁的固体材料通入室中。 净化装置与室连通,以向室提供净化气体。 腔室的出口通过来自腔室的互锁固体材料。 安装在腔室中的旋转螺钉,当旋转时,将互锁的固体材料从腔室内移动到出口。

    Reagent source
    94.
    发明授权
    Reagent source 失效
    试剂来源

    公开(公告)号:US5250135A

    公开(公告)日:1993-10-05

    申请号:US536086

    申请日:1990-06-11

    CPC classification number: C23C16/45561 B01J4/00 B01J4/04 C30B25/14

    Abstract: A method of providing a reagent into a chemical process said provision being in the vapor phase and at a controlled mass flow rate wherein the method comprises:(a) providing a gas stream which contains a gaseous phase complexing agent for the reagent said complexing agent being provided at a controlled partial vapor pressure in said gas stream;(b) providing a primary source of the reagent in a reservoir which is connected to the gas stream via a diffusion path;(c) causing the gaseous phase complexing agent to diffuse into the reservoir at a mass flow rate controlled by its partial pressure in the gas stream;(d) causing the gaseous phase complexing agent in the reservoir to react with the primary source to generate a gaseous phase complex of the reagent and the gaseous phase complexing agent, said generation being, in the steady state, at a rate equivalent to the rate of inflow of said complexing agent;(e) causing the gaseous phase complex to diffuse out of the reservoir into the gas stream at a rate, in the steady state, which is equivalent to its rate of generation in stage (d);whereby the mass flow of reagent occurs at a rate defined and controlled by the vapor pressure of the vapor phase complexing agent in the gas stream.

    Abstract translation: 一种将试剂提供到化学过程中的方法,所述提供处于气相和受控的质量流量,其中所述方法包括:(a)提供气流,所述气流含有所述试剂的气相络合剂,所述络合剂为 在所述气流中以受控的部分蒸气压提供; (b)在经由扩散路径连接到气流的储存器中提供试剂的主要来源; (c)使气相络合剂以其气流中其分压控制的质量流量扩散到储存器中; (d)使储存器中的气相络合剂与初级源反应以产生试剂和气相络合剂的气相络合物,所述生成处于稳定状态,速率等于速率 所述络合剂的流入; (e)使气相配合物以稳定的速度使其从储层中扩散到气流中,其速率等于其在阶段(d)中的产生速率; 由此试剂的质量流量以气流中气相络合剂的蒸气压限定和控制的速率发生。

    Apparatus for treatment of polymeric material
    97.
    发明授权
    Apparatus for treatment of polymeric material 失效
    用于处理聚合材料的装置

    公开(公告)号:US4660585A

    公开(公告)日:1987-04-28

    申请号:US771817

    申请日:1985-10-16

    Abstract: The present invention is directed to a method and apparatus for the detoxification of polymeric film chip materials which have been contaminated with cyanide compounds during the process for the reclamation of their silver content. The present invention includes the steps of providing within a substantially impervious container a quantity of polymeric film chip materials containing a cyanide compound, and then submerging the cyanide containing polymeric film chip materials in a solution containing hypochlorite ion at a pH of approximately 9.5 to 10.5 until the cyanide in the polymeric film chip material is substantially converted into cyanate. In preferred alternative embodiments the treatment solution is replaced with a second treatment solution containing hypochlorite ion and having a pH of approximately 7.5 to 8 until the cyanate is substantially converted into carbon dioxide and nitrogen gases. Mixing means in the form of influent and effluent means are provided in such apparatus.

    Abstract translation: 本发明涉及一种在用于回收其银含量的过程中已经被氰化物化合物污染的聚合物膜芯片材料的解毒的方法和装置。 本发明包括以下步骤:在基本上不渗透的容器内提供一定量的含有氰化物的聚合物膜片材料,然后将含氰化物的聚合物膜芯片材料浸入包含次氯酸根离子的溶液中,pH为约9.5至10.5直至 聚合物膜芯片材料中的氰化物基本上转化为氰酸盐。 在优选的替代实施例中,处理溶液被含有次氯酸根离子的第二处理溶液代替,并且具有约7.5至8的pH,直到氰酸盐基本上转化为二氧化碳和氮气。 在这种装置中提供了以流入和流出装置的形式的混合装置。

Patent Agency Ranking