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    Apparatus for the continuous modification of polymers in the free-flowing state by means of electron radiation
    4.
    发明授权
    Apparatus for the continuous modification of polymers in the free-flowing state by means of electron radiation 失效
    用于通过电子辐射在自由流动状态下连续改性聚合物的装置

    公开(公告)号：US08678804B2

    公开(公告)日：2014-03-25

    申请号：US12088512

    申请日：2006-09-05

    Applicant: Michael Stephan ,  Gert Heinrich ,  Helmut Dorschner

    Inventor： Michael Stephan ,  Gert Heinrich ,  Helmut Dorschner

    IPC: B01J19/08

    CPC classification number: B01J19/26 ,  B01J10/02 ,  B01J19/085 ,  B01J19/1887 ,  B01J19/20 ,  B01J19/22 ,  B01J2219/00033 ,  B01J2219/00119 ,  B01J2219/0869 ,  B01J2219/0871 ,  B01J2219/0877 ,  B01J2219/0879 ,  B29C71/04 ,  B29C2035/0877

    Abstract: An apparatus for the continuous modification of polymers in the flowable state by electron radiation, includes a device configured for converting polymers into the flowable state, a forming device and at least one irradiation device structured and arranged to provide electron radiation in a region of irradiation. Additionally, the apparatus includes at least one cooling device, a radiation guard and supply and discharge lines inside the radiation guard. The supply and discharge lines realize a continuous transport of the polymers in the flowable state at least through the radiation guard into the region of irradiation. Additionally, the supply and discharge lines realize a continuous transport of one of polymers remaining in the flowable state and modified at least inside the radiation guard and solid formed and modified polymers out of the region of the irradiation.

    Abstract translation: 用于通过电子辐射在可流动状态下连续改性聚合物的装置包括构造成将聚合物转化为可流动状态的装置，成形装置和至少一个被构造和布置成在照射区域中提供电子辐射的照射装置。 此外，该装置包括至少一个冷却装置，辐射防护装置和辐射防护装置内的供给和排出线。 供应和排出管线实现至少通过辐射防护层将聚合物在可流动状态下的连续输送到照射区域。 此外，供给和排出线路实现了以可流动状态保持的聚合物中的一种的连续输送，并且将至少在辐射防护件内部和固体形成的和改性的聚合物改性到辐射区域之外。

    Method for producing organic thin film by using film physical property improving process
    7.
    发明授权
    Method for producing organic thin film by using film physical property improving process 有权
    通过使用膜物理性能改进工艺制造有机薄膜的方法

    公开(公告)号：US08133546B2

    公开(公告)日：2012-03-13

    申请号：US12309801

    申请日：2007-07-31

    Applicant: Kazuhisa Kumazawa

    Inventor： Kazuhisa Kumazawa

    IPC: B05D7/24 ,  B05D3/02 ,  B05D3/10

    CPC classification number: B05D3/0254 ,  B01J10/02 ,  B05D1/185 ,  B05D3/0473 ,  B82Y30/00 ,  B82Y40/00

    Abstract: A method is provided for producing an organic thin film on a substrate surface comprising improved heat resistance or durability; said method comprising at least a step (B) of allowing the substrate to contact with an organic solvent solution comprising a metal surfactant having at least one or more hydrolysable group or hydroxyl group, and a catalyst that can interact with the metal surfactant, wherein the method further comprises after step (B), step (E1) of heating the substrate which has been in contact with the organic solvent solution at 100° C. to 150° C.; step (E2) of immersing the substrate which has been in contact with the organic solvent solution in a warm water of 40° C. or more and less than the boiling point; or step (E3) of allowing the substrate which has been in contact with the organic solvent solution to contact with a moisture vapor of 60° C. to 150° C.

    Abstract translation: 提供一种用于在衬底表面上生产有机薄膜的方法，其包括改进的耐热性或耐久性; 所述方法至少包括使基材与包含具有至少一个或多个可水解基团或羟基的金属表面活性剂的有机溶剂溶液和可与金属表面活性剂相互作用的催化剂接触的步骤（B），其中 方法还包括在步骤（B）之后，在100℃至150℃下加热已经与有机溶剂溶液接触的基材的步骤（E1）; 将与有机溶剂溶液接触的基板浸入温度为40℃以上且小于沸点的步骤（E2）; 或使已经与有机溶剂溶液接触的基板与60℃至150℃的湿气接触的步骤（E3）

    Methods of operating surface reactors and reactors employing such methods
    8.
    发明授权
    Methods of operating surface reactors and reactors employing such methods 失效
    使用这种方法操作表面反应器和反应器的方法

    公开(公告)号：US07534404B2

    公开(公告)日：2009-05-19

    申请号：US10570180

    申请日：2004-09-04

    Applicant: Richard A. Holl

    Inventor： Richard A. Holl

    IPC: B01J8/08 ,  B01D47/16 ,  B01F3/04

    CPC classification number: B01F7/008 ,  B01F5/221 ,  B01F7/00758 ,  B01F7/00783 ,  B01F7/00791 ,  B01F7/00825 ,  B01F7/00833 ,  B01F2215/0427 ,  B01J10/02 ,  B01J14/00 ,  B01J19/1887 ,  B01J2219/00085

    Abstract: New methods of operating surface reactors, and such reactors, particularly spinning disk reactors, require that a first reactant is fed to a reactor surface (20) and forms a thin radially outward moving film (60) thereon in a reaction passage (42) formed between the reaction surface (20) and a parallel, closely spaced (less than 1 mm) retaining surface (40). The passage thickness is precisely controllable and the surfaces (20, 40) move relative to one another so that strong shear is applied to the material between them. A second reactant is fed to the surface (20) as a second thin film (65) that as it enters the first film (60), preferably perpendicularly, it is immediately merged therewith along a correspondingly very narrow interaction line (66) by the shear at a rate such as to break up molecular clusters in the films, so that their molecules can aggressively and completely interact by forced interdiffusion. In spinning disk (18) apparatus the first film (60) is fed along the spin axis (14), while subsequent films (65, etc.) are fed at respective distances from the axis (14) such that there is adequate shear for the molecular cluster disruption. Preferably each film (65, etc.) after the first (60) is fed into the reaction passage (42) through a respective thin annular nozzle producing a thin circular film (65) that simultaneously merges with the first film (60) along its entire length.

    Abstract translation: 操作表面反应器和这种反应器，特别是旋转盘式反应器的新方法要求将第一反应物供入反应器表面（20），并在其上形成薄的径向向外的移动膜（60），形成在反应通道（42）中 在反应表面（20）和平行紧密间隔（小于1mm）的保持表面（40）之间。 通道厚度是精确可控的，并且表面（20,40）相对于彼此移动，使得强剪切被施加到它们之间的材料。 第二反应物作为第二薄膜（65）被馈送到表面（20），第二薄膜（65）当其进入第一薄膜（60）时，优选地垂直于其，沿相应的非常窄的相互作用线（66）立即与其合并 以一定的速率剪切，以破坏膜中的分子簇，使得它们的分子可以通过强制相互扩散而积极和完全地相互作用。 在旋转盘（18）装置中，第一膜（60）沿着旋转轴线（14）进给，而随后的膜（65等）以相对于轴线（14）的距离进给，使得存在足够的剪切 分子簇破坏。 优选地，第一（60）之后的每个膜（65等）通过相应的薄环形喷嘴供给到反应通道（42）中，产生薄的圆形膜（65），其同时与第一膜（60）沿其 全长。

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