中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

299 records (took 0.021 seconds)

    Masks, lithography device and semiconductor component
    91.
    发明申请
    Masks, lithography device and semiconductor component 有权
    掩模，光刻设备和半导体元件

    公开(公告)号：US20070082272A1

    公开(公告)日：2007-04-12

    申请号：US10572149

    申请日：2003-09-17

    Applicant: Hans-Jürgen Mann ,  Martin Lowisch ,  Wolfgang Singer

    Inventor： Hans-Jürgen Mann ,  Martin Lowisch ,  Wolfgang Singer

    IPC: G03F1/00 ,  G21K5/00

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F7/70091 ,  G03F7/70191 ,  G21K2201/061

    Abstract: The invention relates to masks comprising a multilayer coating of a specified period thickness distribution such as those used in lithography devices for producing semiconductor components. One problem of projection optics concerns pupil apodization which leads to imaging defects. The invention provides that the period thickness in the mask plane is selected so that it is greater than the period thickness ideal for maximum reflectivity. As a result, not only does the apodization over the pupil become more symmetric but the intensity variation also becomes smaller overall.

    Abstract translation: 本发明涉及包含特定周期厚度分布的多层涂层的掩模，例如用于制造半导体部件的光刻装置中的那些。 投影光学的一个问题涉及导致成像缺陷的瞳孔变迹。 本发明提供了掩模平面中的周期厚度，使得其大于理想的最大反射率的周期厚度。 结果，不仅瞳孔上的变迹变得更加对称，而且整体的强度变化也变小。

    Systems and methods for EUV light source metrology
    93.
    发明申请
    Systems and methods for EUV light source metrology 有权
    EUV光源计量系统和方法

    公开(公告)号：US20070008517A1

    公开(公告)日：2007-01-11

    申请号：US11177501

    申请日：2005-07-08

    Applicant: Igor Fomenkov ,  Norbert Bowering ,  Jerzy Hoffman

    Inventor： Igor Fomenkov ,  Norbert Bowering ,  Jerzy Hoffman

    IPC: G01J1/42

    CPC classification number: G03F7/7085 ,  B82Y10/00 ,  G21K2201/061

    Abstract: Systems and methods for EUV Light Source metrology are disclosed. In a first aspect, a system for measuring an EUV light source power output may include a photoelectron source material disposed along an EUV light pathway to expose the material and generate a quantity of photoelectrons. The system may further include a detector for detecting the photoelectrons and producing an output indicative of EUV power. In another aspect, a system for measuring an EUV light intensity may include a multi-layer mirror, e.g., Mo/Si, disposable along an EUV light pathway to expose the mirror and generate a photocurrent in the mirror. A current monitor may be connected to the mirror to measure the photocurrent and produce an output indicative of EUV power. In yet another aspect, an off-line EUV metrology system may include an instrument for measuring a light characteristic and MoSi2/Si multi-layer mirror.

    Abstract translation: 披露了EUV光源计量系统和方法。 在第一方面，用于测量EUV光源功率输出的系统可以包括沿着EUV光路设置的光电子源材料，以暴露材料并产生一定量的光电子。 该系统还可以包括用于检测光电子并产生指示EUV功率的输出的检测器。 在另一方面，用于测量EUV光强度的系统可以包括多层反射镜，例如Mo / Si，沿着EUV光路径可弃，以暴露反射镜并在反射镜中产生光电流。 电流监视器可以连接到反射镜以测量光电流并产生指示EUV功率的输出。 在另一方面，离线EUV测量系统可以包括用于测量光特性和MoSi 2 / Si多层反射镜的仪器。

    Beam conditioning system with sequential optic
    94.
    发明申请
    Beam conditioning system with sequential optic 有权
    光束调节系统

    公开(公告)号：US20060239405A1

    公开(公告)日：2006-10-26

    申请号：US11449208

    申请日：2006-06-08

    Applicant: Boris Verman ,  Jimpei Harada

    Inventor： Boris Verman ,  Jimpei Harada

    IPC: G21K1/06

    CPC classification number: B82Y10/00 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/062 ,  G21K2201/064

    Abstract: An x-ray beam conditioning system with a first diffractive element and a second diffractive element. The two diffractive elements are arranged in a sequential configuration, and one of the diffractive elements is a crystal. The other diffractive element may be a multilayer optic.

    Abstract translation: 一种具有第一衍射元件和第二衍射元件的X射线束调节系统。 两个衍射元件按顺序配置，其中一个衍射元件是晶体。 另一个衍射元件可以是多层光学元件。

    Apparatus and method for the analysis of atomic and molecular elements by wavelength dispersive x-ray spectrometric devices
    97.
    发明申请
    Apparatus and method for the analysis of atomic and molecular elements by wavelength dispersive x-ray spectrometric devices 有权
    用于通过波长色散X射线光谱仪分析原子和分子元素的装置和方法

    公开(公告)号：US20040013227A1

    公开(公告)日：2004-01-22

    申请号：US10196805

    申请日：2002-07-17

    Inventor： Carsten Michaelsen ,  Rudiger Bormann ,  Jorg Wiesmann

    IPC: G01T001/36

    CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/064

    Abstract: In an apparatus and a method for the analysis of atomic or molecular elements contained in a sample by wavelength dispersive X-ray spectrometry, wherein primary x ray or electron radiation is directed onto the sample whereby fluorescence radiation is emitted from the sample, the fluorescence radiation is directed onto a mirror or focussing device consisting of a multi-layer structure including pairs of layers of which one layer of a pair comprises carbon or scandium and the other comprises a metal oxide or a metal nitride and the fluorescence radiation is reflected from the mirror or focussing device onto an analysis detector for the analysis of the atomic or molecular elements contained in the sample.

    Abstract translation: 在通过波长色散X射线光谱法分析样品中原子或分子元素的装置和方法中，其中初级x射线或电子辐射被引导到样品上，从而从样品发射荧光辐射，荧光辐射 被引导到由多层结构构成的反射镜或聚焦装置，该多层结构包括一对层，其中一层包括碳或钪，另一层包含金属氧化物或金属氮化物，并且荧光辐射从反射镜反射 或聚焦装置到分析检测器上，以分析样品中包含的原子或分子元素。

    Magnetron sputtered boron films for increasing hardness of a metal surface
    98.
    发明授权
    Magnetron sputtered boron films for increasing hardness of a metal surface 失效
    磁控溅射硼膜以增加金属表面的硬度

    公开(公告)号：US06569293B1

    公开(公告)日：2003-05-27

    申请号：US08871705

    申请日：1997-06-09

    Applicant: Daniel M. Makowiecki ,  Alan F. Jankowski

    Inventor： Daniel M. Makowiecki ,  Alan F. Jankowski

    IPC: C23C1435

    CPC classification number: B82Y10/00 ,  C23C14/0635 ,  C23C14/0647 ,  C23C14/18 ,  C23C14/185 ,  C23C14/3414 ,  G21K1/062 ,  G21K2201/061 ,  G21K2201/067 ,  Y10T428/265 ,  Y10T428/31678

    Abstract: A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for producing hardened surfaces, surfacing machine tools, etc. and for ultra-thin band pass filters as well as the low Z element in low Z/high Z optical components, such as mirrors which enhance reflectivity from grazing to normal incidence.

    Abstract translation: 描述了通过磁控溅射沉积生产薄硼和钛/硼膜的方法。 不同于当通过各种物理气相沉积工艺制备薄膜时，无定形硼膜不含形态生长特征。 磁控溅射沉积法需要使用通过热等静压制备的高密度结晶硼溅射靶。 通过该方法制备的薄硼膜可用于生产硬化表面，表面机床等，以及用于超薄带通滤光器以及低Z /高Z光学部件中的低Z元件，例如增强反射率的反射镜 从放牧到正常发病。

    Multilayer extreme ultraviolet mirrors with enhanced reflectivity
    99.
    发明授权
    Multilayer extreme ultraviolet mirrors with enhanced reflectivity 有权
    具有增强反射率的多层极紫外镜

    公开(公告)号：US06449086B1

    公开(公告)日：2002-09-10

    申请号：US09605651

    申请日：2000-06-28

    Applicant: Mandeep Singh

    Inventor： Mandeep Singh

    IPC: F21V906

    CPC classification number: B82Y10/00 ,  G02B5/0891 ,  G03F1/24 ,  G03F7/70058 ,  G03F7/70233 ,  G03F7/70958 ,  G03F7/70983 ,  G21K1/06 ,  G21K1/062 ,  G21K2201/061 ,  Y10S359/90 ,  Y10T428/24355

    Abstract: The reflectivity of multilayered EUV mirrors tuned for 11-16 nm, for which the two-component Mo/Be and Mo/Si multilayered systems are commonly used, is enhanced by incorporating additional elements and their compounds mainly from period 5 of the periodic table. In addition, the reflectivity performance of the multilayer stacks is further enhanced by a numerical global optimization procedure by which the layer thicknesses are varied for optimum performance in, contradistinction to the constant layer thickness—i.e. constant partition ration—multilayer stacks commonly designed and fabricated hitherto. By incorporating additional materials with differing complex refractive indices in various regions of the stack, or by wholly replacing one of the components (typically Mo), peak reflectivity enhancements of up to 5% for a single reflector are achieved, compared to a standard unoptimized stack. The additional materials used are: Rb, RbCl, Sr, Y, Zr, Ru, Rh, Tc, Pd, Nb and Be. Protective capping layers of B, Ru, Rh, C, Si3N4, SiC, are disclosed.

    Abstract translation: 通常使用双组分Mo / Be和Mo / Si多层体系的11-16nm的多层EUV反射镜的反射率通过主要从周期表的第5周引入附加元素及其化合物来增强。 此外，通过数值全局优化程序进一步增强了多层堆叠的反射性能，通过该数值全局优化程序，层厚度随着恒定层厚度的变化而达到最佳性能。 迄今为止通常设计和制造的恒定分配配给多层堆叠。 通过在堆叠的各个区域中引入具有不同复合折射率的附加材料，或通过完全替代其中一个部件（通常为Mo）），与标准未优化的堆叠相比，实​​现单个反射器的高达5％的峰值反射率增强 。 使用的附加材料有：Rb，RbCl，Sr，Y，Zr，Ru，Rh，Tc，Pd，Nb和Be。 公开了B，Ru，Rh，C，Si 3 N 4，SiC的保护性覆盖层。

Patent Agency Ranking