公开(公告)号：US20130240515A1

公开(公告)日：2013-09-19

申请号：US13799799

申请日：2013-03-13

Applicant: MICROWAVE MATERIALS TECHNOLOGIES, INC.

Inventor： Harold Dail Kimrey, JR.

IPC: H05B6/78

CPC classification number: H05B6/78 ,  A23L3/01 ,  A23L3/02 ,  A23V2002/00 ,  A61B90/70 ,  A61L2/04 ,  A61L2/12 ,  A61L2202/21 ,  A61L2202/24 ,  A61L2202/26 ,  B65B55/06 ,  H01L21/67201 ,  H05B6/68 ,  H05B6/70 ,  H05B6/782 ,  H05B6/80

Abstract: A microwave heating system for continuously heating a plurality of articles and process for using the same are provided. The microwave system includes a thermalization zone for thermalizing the articles to a substantially uniform temperature, a microwave heating zone for increasing the temperature of the articles by at least about 50° C., and a quench zone for cooling the articles after heating. The heating can be carried out at a rate of at least 25° C. per minute. The system also includes at least one conveyance system for transporting the articles through each of the thermalization, microwave heating, and quench zones. The system can be commercial-sized and may have an overall production rate of at least 20 packages per minute per convey line.

Abstract translation: 提供了一种用于连续加热多个物品的微波加热系统及其使用方法。 微波系统包括用于将制品热成型至基本均匀的温度的热化区，用于将制品的温度升高至少约50℃的微波加热区和用于在加热之后冷却制品的骤冷区。 加热可以以每分钟至少25℃的速率进行。 该系统还包括至少一个输送系统，用于通过每个热化，微波加热和骤冷区输送物品。 该系统可以是商业尺寸的，并且可以具有每个输送线每分钟至少20个包装的总生产率。

公开(公告)号：US20130240513A1

公开(公告)日：2013-09-19

申请号：US13799610

申请日：2013-03-13

Applicant: MICROWAVE MATERIALS TECHNOLOGIES, INC.

Inventor： Harold Dail Kimrey, JR.

IPC: H05B6/68

CPC classification number: H05B6/78 ,  A23L3/01 ,  A23L3/02 ,  A23V2002/00 ,  A61B90/70 ,  A61L2/04 ,  A61L2/12 ,  A61L2202/21 ,  A61L2202/24 ,  A61L2202/26 ,  B65B55/06 ,  H01L21/67201 ,  H05B6/68 ,  H05B6/70 ,  H05B6/782 ,  H05B6/80

Abstract: A method for controlling a microwave heating system is provided. The method may be used with a system having a liquid-filled microwave heating chamber and includes measuring the value of one or more microwave system parameters. Suitable parameters can include, for example, net microwave power discharged, the temperature of the liquid in the microwave chamber, the flow rate of liquid through the microwave chamber, and the speed of the conveyance system disposed within the microwave chamber. The measured value of the selected parameter is then compared to a target value for that parameter in order to determine a difference. Based on the difference, one or more actions can be taken in order to start, stop, or alter the operation of the microwave heating system.

Abstract translation: 提供了一种用于控制微波加热系统的方法。 该方法可以与具有液体充填的微波加热室的系统一起使用，并且包括测量一个或多个微波系统参数的值。 合适的参数可以包括例如排放的净微波功率，微波室中的液体的温度，通过微波室的液体的流速以及设置在微波室内的输送系统的速度。 然后将所选参数的测量值与该参数的目标值进行比较，以确定差异。 基于该差异，可以采取一个或多个动作来启动，停止或改变微波加热系统的操作。

公开(公告)号：US20130240507A1

公开(公告)日：2013-09-19

申请号：US13799684

申请日：2013-03-13

Applicant: MICROWAVE MATERIALS TECHNOLOGIES, INC.

Inventor： Harold Dail Kimrey, JR.

IPC: H05B6/68

CPC classification number: H05B6/78 ,  A23L3/01 ,  A23L3/02 ,  A23V2002/00 ,  A61B90/70 ,  A61L2/04 ,  A61L2/12 ,  A61L2202/21 ,  A61L2202/24 ,  A61L2202/26 ,  B65B55/06 ,  H01L21/67201 ,  H05B6/68 ,  H05B6/70 ,  H05B6/782 ,  H05B6/80

Abstract: A method and system for heating a plurality of articles is provided. The method includes discharging microwave energy into a microwave chamber and passing a plurality of articles through the heating zone. At least a portion of the microwave energy discharged into the heating zone may first be phase shifted using one or more phase shifting devices. One embodiment of a rotatable phase shifting device is also provided and includes an elongated fixed member disposed proximate a rotatable housing. The phase shifting device employed by the microwave heating system is configured such that the ratio of the article residence time in the heating zone to the phase shifting rate is at least about 4:1. Rotatable phase shifting devices, or variable phase short circuits, as described herein can also be used in other applications, such as, for example, as impedance or frequency tuning devices.

Abstract translation: 提供了一种用于加热多个物品的方法和系统。 该方法包括将微波能量放入微波室并使多个物品通过加热区。 可以首先使用一个或多个相移装置将放入加热区的微波能量的至少一部分相移。 还提供了可旋转相移装置的一个实施例，并且包括靠近可旋转壳体设置的细长固定构件。 由微波加热系统采用的相移装置被配置成使得在加热区域中的制品停留时间与相移速率之比至少为4:1。 如本文所述的可旋转相移装置或可变相位短路也可用于其它应用中，例如阻抗或频率调谐装置。

公开(公告)号：US08506711B2

公开(公告)日：2013-08-13

申请号：US12358752

申请日：2009-01-23

Applicant: Young Jong Lee ,  Jun Young Choi ,  Saeng Hyun Jo ,  Byung-Oh Yoon ,  Gyeong-Hoon Kim ,  Hong-Gi Jeong

Inventor： Young Jong Lee ,  Jun Young Choi ,  Saeng Hyun Jo ,  Byung-Oh Yoon ,  Gyeong-Hoon Kim ,  Hong-Gi Jeong

IPC: C23C16/44 ,  C23F1/00 ,  H01L21/306 ,  C23C16/22 ,  C23C16/06

CPC classification number: H01L21/67126 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67236 ,  H01L51/56

Abstract: An flat-panel display (FPD) manufacturing apparatus is provided. The apparatus is flexibly configured so that it is capable of easily processing large-size substrates while also simplifying manufacturing, transporting, operating, and repair processes.

Abstract translation: 提供了一种平板显示器（FPD）制造装置。 该装置灵活地构造成能够容易地处理大尺寸基板，同时也简化了制造，运输，操作和修理过程。

公开(公告)号：US08492287B2

公开(公告)日：2013-07-23

申请号：US13098748

申请日：2011-05-02

Applicant: Shigeru Tahara

Inventor： Shigeru Tahara

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/301 ,  H01L21/461

CPC classification number: H01L21/67201 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/67115 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76835

Abstract: A silicon-containing film on a substrate is subjected to a plasma process using a process gas containing fluorine and carbon, and is thereafter subjected to plasma process using an ammonia gas, whereby ammonium silicofluoride having toxicity and hygroscopic property is adhered to the substrate. The harmful ammonium silicofluoride is removed by the inventive method. After conducting the plasma process using an ammonia gas, the substrate is heated to a temperature not lower than the decomposition temperature of the ammonium silicofluoride to decompose the ammonium silicofluoride in a process container in which the plasma process was conducted, or in a process container connected with the processing vessel which the plasma process was conducted therein and is isolated from a clean room atmosphere.

Abstract translation: 使用含氟和碳的处理气体对基板上的含硅膜进行等离子体处理，然后使用氨气进行等离子体处理，由此将具有毒性和吸湿性的氟硅烷粘附到基板上。 通过本发明的方法除去有害的氟硅酸铵。 在使用氨气进行等离子体处理之后，将基板加热至不低于硅氟化铵的分解温度的温度，以在进行等离子体处理的处理容器中或在连接的处理容器中分解氟化硅铵 与其中进行等离子体处理的处理容器一起从洁净室气氛中分离出来。

公开(公告)号：US08489237B2

公开(公告)日：2013-07-16

申请号：US13243906

申请日：2011-09-23

Applicant: Chris Gage ,  Damon Genetti

Inventor： Chris Gage ,  Damon Genetti

IPC: G05B19/418

CPC classification number: H01L21/68 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67742

Abstract: Methods correcting wafer position error are provided. The methods involve measuring wafer position error on a robot during transfer to an intermediate station. This measurement data is then used by a second robot to perform wafer pick moves from the intermediate station with corrections to center the wafer. Wafer position correction may be performed at only one location during the transfer process. Also provided are systems and apparatuses for transferring wafers using an intermediate station.

Abstract translation: 提供校正晶片位置误差的方法。 该方法涉及在转移到中间站期间测量机器人上的晶片位置误差。 该测量数据然后被第二机器人用于执行从中间站的晶片拾取移动，其具有校正以使晶片居中。 晶片位置校正可以在传送过程中仅在一个位置进行。 还提供了使用中间站传送晶片的系统和装置。

公开(公告)号：US08480346B2

公开(公告)日：2013-07-09

申请号：US12459716

申请日：2009-07-07

Applicant: Erwan Godol ,  Emmanuelle Veran

Inventor： Erwan Godol ,  Emmanuelle Veran

IPC: B65G49/07

CPC classification number: H01L21/67778 ,  H01L21/67201

Abstract: The goal of the present invention is to provide an apparatus capable of cooperation with at least one piece of wafer processing equipment. The apparatus is connected to a first equipment via a first opening, to a wafer transport case via a second opening and to a second piece of equipment via a third opening. The apparatus is capable of removing a basket of parallel stacked trays of wafers from a wafer transport case. The apparatus is capable of placing and supporting the wafers in order to move them to the first equipment through the second opening and to the second piece of equipment through the third opening.

Abstract translation: 本发明的目的是提供一种能够与至少一块晶片加工设备配合的装置。 该设备经由第一开口连接到第一设备，经由第二开口连接到晶片传送箱，经由第三开口连接到第二设备。 该装置能够从晶片运输箱中移除一篮平行堆叠的晶片盘。 该装置能够放置和支撑晶片，以便通过第二开口将它们移动到第一设备，并通过第三开口移动到第二设备。

公开(公告)号：US20130149075A1

公开(公告)日：2013-06-13

申请号：US13708751

申请日：2012-12-07

Applicant: INTEVAC, INC.

Inventor： Vinay Shah ,  William Runstadler, JR. ,  Kevin P. Fairbairn ,  Terry Bluck ,  Richard Henry Cooke

IPC: H01L21/677

CPC classification number: H01L21/67736 ,  H01L21/67126 ,  H01L21/67201 ,  H01L21/67271 ,  H01L21/67288

Abstract: A system for transporting substrates from an atmospheric pressure to high vacuum pressure and comprising: a rough vacuum chamber having an entry valve and an exit opening; a high vacuum chamber having an entry opening, the high vacuum chamber coupled to the rough vacuum chamber such that the exit opening and the entry opening are aligned; a valve situated between the exit opening and the entry opening; a first conveyor belt provided in the rough vacuum chamber; a second conveyor provided in the high vacuum chamber; a sensing element provided in the high vacuum chamber to enable detection of broken substrates on the second conveyor; and, a mechanism provided on the second conveyor belt enabling dumping of broken substrates onto the bottom of the high vacuum chamber.

Abstract translation: 一种用于将基板从大气压输送到高真空压力的系统，包括：具有入口阀和出口的粗真空室; 具有进入开口的高真空室，所述高真空室联接到所述粗真空室，使得所述出口和入口开口对齐; 位于出口和入口之间的阀; 设置在粗糙真空室中的第一传送带; 设置在高真空室中的第二传送器; 设置在所述高真空室中以便能够检测所述第二输送机上的破裂的基板的感测元件; 以及设置在第二传送带上的机构，其能够将破碎的基板倾倒到高真空室的底部上。

公开(公告)号：US20130142594A1

公开(公告)日：2013-06-06

申请号：US13309283

申请日：2011-12-01

Applicant: Shao-Yen Ku ,  Ming-Jung Chen ,  Tsu-Yang Chung ,  Chi-Yun Tseng ,  Jui-Ping Chuang

Inventor： Shao-Yen Ku ,  Ming-Jung Chen ,  Tsu-Yang Chung ,  Chi-Yun Tseng ,  Jui-Ping Chuang

IPC: H01L21/677

CPC classification number: H01L21/67201

Abstract: An apparatus comprises a process chamber, and a loadlock connected to the process chamber. The loadlock is configured to have a wafer holder disposed therein. The wafer holder is configured to store a plurality of wafers, and is configured to transport the plurality of wafers away from the loadlock.

Abstract translation: 一种装置包括处理室和连接到处理室的负载锁。 负载锁被配置为具有设置在其中的晶片保持架。 晶片保持器被配置为存储多个晶片，并且被配置为将多个晶片远离装载锁传送。

公开(公告)号：US20130130499A1

公开(公告)日：2013-05-23

申请号：US13813663

申请日：2011-08-02

Applicant: Hajime Ugajin ,  Shigeki Tozawa

Inventor： Hajime Ugajin ,  Shigeki Tozawa

IPC: H01L21/302

CPC classification number: H01L21/302 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/67745 ,  H01L21/76224 ,  H01L21/76283 ,  H01L27/11521 ,  H01L29/66825 ,  H01L29/66833

Abstract: A substrate processing method for removing an Si-based film on a surface of a substrate accommodated in a processing chamber includes a first step in which the Si-based film on the surface of the substrate is transformed into a reaction product by a gas containing a halogen element and an alkaline gas in the processing chamber and a second step in which the reaction product is vaporized in the processing chamber which is depressurized to a pressure lower than a pressure during the first step. The first step and the second step are repeated two or more times.

Abstract translation: 用于在容纳在处理室中的基板的表面上除去Si基膜的基板处理方法包括第一步骤，其中基板表面上的Si基膜通过含有 卤素元素和碱性气体，第二步骤，其中反应产物在处理室中蒸发，该处理室被减压到比第一步骤期间的压力低的压力。 第一步和第二步重复两次或更多次。