公开(公告)号：US5320988A

公开(公告)日：1994-06-14

申请号：US985500

申请日：1992-12-01

Applicant: Francis R. Corrigan

Inventor： Francis R. Corrigan

IPC: B01J3/06 ,  C04B35/5831 ,  C04B35/58

CPC classification number: B01J3/062 ,  C04B35/5831 ,  B01J2203/0645 ,  B01J2203/066 ,  B01J2203/0685

Abstract: Disclosed is a process for preparing sintered polycrystalline CBN/ceramic conjoint masses in an HP/HT process which comprises subjecting a mixture of GBN and one or more of a ceramic material or metal which reacts with BN to form a ceramic material, to HP/HT conditions for inducing conversion of said GBN to CBN, inducing conversion of any of said metal to its corresponding metal ceramic, and forming said CBN/ceramic conjoint mass.

Abstract translation: 公开了一种在HP / HT工艺中制备烧结的多晶CBN /陶瓷结块的方法，该方法包括将GBN和一种或多种与BN反应形成陶瓷材料的陶瓷材料或金属的混合物与HP / HT 诱导所述GBN转化为CBN的条件，诱导任何所述金属转化成其相应的金属陶瓷，以及形成所述CBN /陶瓷结合体。

公开(公告)号：US5310447A

公开(公告)日：1994-05-10

申请号：US744815

申请日：1991-08-12

Applicant: Thomas R. Anthony ,  William F. Banholzer ,  James F. Fleischer

Inventor： Thomas R. Anthony ,  William F. Banholzer ,  James F. Fleischer

IPC: B01J3/06 ,  C01B31/06 ,  C30B25/02 ,  C30B29/04

CPC classification number: C01B31/06 ,  B01J3/062 ,  C30B25/02 ,  C30B29/04 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  B01J2203/0685 ,  Y10S117/915

Abstract: Single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13 has been found to have a thermal conductivity higher than that of any substance previously known, typically at least 40% higher than that of naturally occurring IIA diamond. It may be prepared by a method comprising an initial step of low pressure chemical vapor deposition employing an isotopically pure hydrocarbon in combination with hydrogen, followed by comminution of the diamond thus obtained and conversion thereof to single-crystal diamond under high pressure conditions.

Abstract translation: 已经发现由同位素纯碳-12或碳-13组成的单晶金刚石的导热率高于以前已知的任何物质的导热率，通常比天然存在的IIA金刚石高出至少40％。 它可以通过包括使用同位素纯烃与氢组合的低压化学气相沉积的初始步骤的方法制备，然后粉碎如此获得的金刚石并在高压条件下将其转化成单晶金刚石。

公开(公告)号：US5296207A

公开(公告)日：1994-03-22

申请号：US749304

申请日：1991-08-23

Applicant: Benno Lux

Inventor： Benno Lux

IPC: C01B31/06 ,  C22C26/00 ,  C30B25/10 ,  C30B29/04 ,  B01J3/06

CPC classification number: C30B25/105 ,  H01L2924/0002

Abstract: A composite element is disclosed, having improved heat conductivity, and is composed of a substrate whose surface layer enables homeo- or heteroepitactic growth of the diamond lattice from the gas phase, and of a low pressure diamond layer grown on the substrate, and in which the diamond layer grown is enriched compared to the normal diamond composition in the carbon isotope C.sup.12 and depleted in the heavier carbon isotopes C.sup.13 and C.sup.14.

Abstract translation: 公开了具有改进的导热性的复合元件，并且由表面层使得来自气相的金刚石晶格的均匀或异质生长以及在基底上生长的低压金刚石层的基底组成，其中 与碳同位素C12中的正常金刚石组成相比，生长的金刚石层富集，并且耗尽了较重的碳同位素C13和C14。

公开(公告)号：US5258206A

公开(公告)日：1993-11-02

申请号：US813041

申请日：1991-12-23

Applicant: Nariyuki Hayashi ,  Toshimichi Ito

Inventor： Nariyuki Hayashi ,  Toshimichi Ito

IPC: C23C16/27 ,  C23C16/458 ,  C30B25/12 ,  B05D3/06 ,  B01J3/06

CPC classification number: C23C16/27 ,  C23C16/274 ,  C23C16/277 ,  C23C16/458 ,  C30B25/12

Abstract: The present invention concerns a method of producing a diamond thin film. A plasma-activated gas, obtained by exciting a starting material containing a carbon source gas, is brought into contact with a surface of a substrate, on which a diamond thin film is to be formed under the presence of an auxiliary member placed adjacent to a protruded portion present at the surface of the substrate. The diamond thin film is thereby formed on the substrate. An apparatus for producing a diamond thin film by means of a microwave plasma method has an auxiliary member placed adjacent to a protruded portion present at the surface of the substrate on which the diamond thin film is to be formed.

Abstract translation: 本发明涉及一种制造金刚石薄膜的方法。 通过激发含有碳源气体的原料而获得的等离子体活化气体与在与其邻接设置的辅助构件的存在下将要形成金刚石薄膜的基板的表面接触 存在于基板表面的突出部分。 由此，在基板上形成金刚石薄膜。 通过微波等离子体法制造金刚石薄膜的装置具有与存在于其上将要形成金刚石薄膜的基板表面上的突出部分相邻放置的辅助部件。

公开(公告)号：US5106792A

公开(公告)日：1992-04-21

申请号：US630916

申请日：1990-12-20

Applicant: Francis R. Corrigan

Inventor： Francis R. Corrigan

IPC: B01J3/06 ,  C01B21/064 ,  C04B35/583 ,  C04B35/5831

CPC classification number: C04B35/5831

Abstract: Broadly, the present invention is directed to a high pressure/high temperature (HP/HT) process for making polycrystalline CBN composite masses from graphitic boron nitride (GBN) in the substantial absence of catalytically-active material. The present invention specifically comprises subjecting a mixture of different structural forms of GBN to simultaneous conversion of each for making a CBN/CBN composite mass. Pyrolytic boron nitride/hexagonal boron nitride (PBN/HBN) mixtures are ideally suited for conversion into the inventive CBN/CBN composite masses of the present invention.

Abstract translation: 概括地说，本发明涉及在基本上没有催化活性材料的情况下从石墨氮化硼（GBN）制造多晶CBN复合材料的高压/高温（HP / HT）工艺。 本发明具体包括使不同结构形式的GBN的混合物同时转化以制备CBN / CBN复合材料。 热解氮化硼/六方氮化硼（PBN / HBN）混合物理想地适用于转化成本发明的本发明的CBN / CBN复合材料。

公开(公告)号：US5015265A

公开(公告)日：1991-05-14

申请号：US365883

申请日：1989-06-14

Applicant: Francis R. Corrigan ,  David E. Slutz

Inventor： Francis R. Corrigan ,  David E. Slutz

IPC: B23B27/14 ,  B01J2/00 ,  B01J3/06 ,  B23P15/28 ,  B24D3/00 ,  C01B21/064 ,  C04B35/583 ,  C04B35/5831 ,  C04B41/87

CPC classification number: C04B35/5831

Abstract: Abrasive particles and articles made from cubic boron nitride derived from coated hexagonal boron nitride which is substantially free of oxides and volatile contaminants. Polycrystalline CBN is prepared from HBN by removing oxide from the surface of HBN particles to form HBN particles having a substantially oxide-free surface. The HBN particles having a substantially oxide-free surface are coated with an agent which is capable of preventing re-oxidation of the surface of the HBN particles to form coated HBN particles in a substantially oxide-free state. The coated HBN particles in a substantially oxide-free state are then converted to a polycrystalline CBN by direct conversion of HBN to CBN. Coating agents include metals, metal carbides, metal nitrides and metal borides. A preferred coating agent is titanium carbide.

公开(公告)号：US5011514A

公开(公告)日：1991-04-30

申请号：US378123

申请日：1989-07-11

Applicant: Hyun S. Cho ,  Chien-Min Sung ,  Leo Merrill ,  Sy-Hwa Chen ,  Frank Csillag

Inventor： Hyun S. Cho ,  Chien-Min Sung ,  Leo Merrill ,  Sy-Hwa Chen ,  Frank Csillag

IPC: B23P15/28 ,  B01J3/06 ,  B24D3/08 ,  C09K3/14 ,  C22C1/05 ,  C22C26/00 ,  C22C29/00 ,  C22C29/16 ,  E21B10/56 ,  E21B10/567

CPC classification number: E21B10/567 ,  B01J3/062 ,  B24D3/08 ,  C09K3/1445 ,  C22C26/00 ,  E21B10/5673 ,  F16C33/043 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/0685 ,  B22F2999/00

Abstract: Superabrasive cutting elements, backed compacts and methods for their manufacture are disclosed wherein metal coated superabrasive particles are cemented under HPHT conditions. The superabrasives bond to the metal of the coating and the metal coatings of adjacent particles bond to each other forming a matrix. A binding aid with thermal expansion characteristics close to that of the superabrasive particle can be infiltrated through or otherwise mixed with the particles to assist in the bonding between the metal coatings and to fill in voids. Catalyst and non-catalyst binding aids can also be used. Uncoated, smaller superabrasive particles can be interstitially dispersed among the coated particles to increase the superabrasive concentration and can self bond to form a cemented/sintered structure. Tungsten is a preferred metal coating and silicon is a preferred binding/sintering aid. The superabrasive can be diamond, cubic boron nitride, boron doped diamond or crushed sintered polycrystalline aggregates. The free-standing cutting element can have a brazeable layer and the compact can be backed with, for example, cemented tungsten carbide. Free-standing cutting elements can be thermally stable up to 1,200.degree. C. Backed compacts can be thermally stable up to 1,100.degree. C.

Abstract translation: 公开了热稳定的超研磨产品，特别是超研磨切割元件，以及用于其制造的背衬压块及其方法，其中金属涂覆的超级磨料颗粒在HPHT条件下胶合。 超级磨料结合到涂层的金属上，相邻颗粒的金属涂层彼此结合形成基体。 具有接近超级磨料颗粒的热膨胀特性的粘合助剂可以渗入或与颗粒混合，以有助于金属涂层之间的粘合并填充空隙。 还可以使用催化剂和非催化剂结合助剂。 未涂覆的较小的超级磨料颗粒可以间隙地分散在涂覆的颗粒中以增加超研磨剂浓度并且可以自粘以形成胶结/烧结结构。 钨是优选的金属涂层，硅是优选的结合/烧结助剂。 超级磨料可以是金刚石，立方氮化硼，硼掺杂金刚石或粉碎烧结多晶聚集体。 独立的切割元件可以具有可钎焊层，并且该压块可以例如用硬质合金碳化钨来支撑。 独立的切割元件可以在1200℃下热稳定。支撑压块可在1100℃下热稳定。

公开(公告)号：US5010043A

公开(公告)日：1991-04-23

申请号：US283362

申请日：1988-11-15

Applicant: Alfred E. Ringwood

Inventor： Alfred E. Ringwood

IPC: B23B27/14 ,  B01J3/06 ,  B24D3/14 ,  B24D18/00 ,  C04B35/52

CPC classification number: C04B35/52 ,  B01J3/062 ,  B24D18/0009 ,  C04B35/62802 ,  C04B35/62897 ,  C04B35/6316 ,  C04B35/645 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  C04B2235/3817 ,  C04B2235/3826 ,  C04B2235/3839 ,  C04B2235/3843 ,  C04B2235/3847 ,  C04B2235/3891 ,  C04B2235/40 ,  C04B2235/404 ,  C04B2235/408 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/616 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/721 ,  C04B2235/728 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/95 ,  C04B2235/96

Abstract: A process for producing a diamond compact comprised of diamond crystals bonded mainly by silicon carbide. The diamond crystals are intimately mixed with silicon in the proportions 97 to 65 percent by weight of diamond to 3 to 35 percent by weight of silicon. The thus-mixed diamond crystals and silicon are placed immediately adjacent to one or more bodies of silicon within a container and subjected to high pressure and temperature so as to cause melting of the premixed silicon and of the external silicon which infiltrates into the interstitial spaces between the diamond crystals to cause most of the silicon between the diamond crystals to react with diamond to produce silicon carbide. The elevated temperature is in the range 1,100.degree. to 18,000.degree. C., and the elevated pressure is in the range 10 to 40 kilobars. The resulting compact contains between 50 and 85 volume percent of diamond with a density of at least 3.35 g/cm.sup.3 and a compressive strength of at least 10 kilobars.

Abstract translation: PCT No.PCT / AU88 / 00058 Sec。 371日期：1988年11月15日 102（e）1988年11月15日日期PCT提交1988年3月2日PCT公布。 公开号WO88 / 07409 日期：1988年10月6日。一种用于生产由主要由碳化硅结合的金刚石晶体组成的金刚石致密体的方法。 金刚石晶体与硅密切混合，其比例为金刚石重量百分比为97至65％，重量比为3至35％。 将如此混合的金刚石晶体和硅直接放置在容器内的一个或多个硅体附近，并经受高压和高温，从而使预混硅和外硅渗透到第 金刚石晶体使金刚石晶体之间的大部分硅与金刚石反应以产生碳化硅。 升高的温度在1100°至18000℃的范围内，升高的压力在10至40千伏的范围内。 所得到的压块含有50至85体积％的金刚石，其密度至少为3.35g / cm 3，抗压强度至少为10千碱基。

公开(公告)号：US4985051A

公开(公告)日：1991-01-15

申请号：US436121

申请日：1989-11-13

Applicant: Alfred E. Ringwood

Inventor： Alfred E. Ringwood

IPC: B01J3/06

CPC classification number: C04B35/52 ,  B01J3/062 ,  C04B35/6303 ,  C04B35/6316 ,  C04B35/645 ,  C22C1/058 ,  C22C26/00 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  C04B2235/3826 ,  C04B2235/3839 ,  C04B2235/3843 ,  C04B2235/3847 ,  C04B2235/404 ,  C04B2235/427 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/721 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96

Abstract: Diamond compact composed of 60-95 volume % diamond crystals plastically deformed into a closely packed, rigid structure with contacts between the diamond crystals over extended mating surfaces arising from the plastic deformation. The diamond crystals are bonded together by an interstitial bonding material composed of a refractory carbide, such as silicon carbide, or a bonding material composed of a metal such as rhenium and a refractory carbide formed by reaction of a metallic bonding agent, such as tungsten, with carbon.

Abstract translation: 由60-95体积％的金刚石晶体组成的金刚石结晶体塑性变形成紧密堆积的刚性结构，在由塑性变形引起的延伸配合表面上的金刚石晶体之间具有接触。 金刚石晶体通过由诸如碳化硅的耐火碳化物构成的间隙接合材料或由金属如铼构成的接合材料和通过诸如钨的金属粘合剂的反应形成的耐火碳化物形成， 与碳。

公开(公告)号：US4954314A

公开(公告)日：1990-09-04

申请号：US476544

申请日：1990-02-07

Applicant: Yukio Nishiyama ,  Junzo Fujioka ,  Haruki Hino ,  Yuji Matsuzaki ,  Masayuki Sakiyama ,  Minoru Yokoyama

Inventor： Yukio Nishiyama ,  Junzo Fujioka ,  Haruki Hino ,  Yuji Matsuzaki ,  Masayuki Sakiyama ,  Minoru Yokoyama

IPC: B01J3/06 ,  B01J8/00 ,  C04B35/65 ,  C22C1/05

CPC classification number: B01J3/065 ,  B01J8/0095 ,  C04B35/651 ,  C22C1/058

Abstract: A plural number of types of material powders are accommodated in an accommodation chamber in a mixed state and the material powders are continuously subjected to a self-exothermic reaction inducing chemical reactions between the material powders caused by heat of reaction released when the mixed material powders synthesize. The synthesized material of high temperature due to the self-exothermic reaction is pressed by utilizing an electromagnetic force just after the finish of the self-exothermic reaction. The exothermic reaction is caused by an ignition circuit including an ignition electrode and the electromagnetic force is generated by an electromagnetic force generation circuit including an electric current inducing means. These circuits are connected through and regulated by a relay circuit. Thus the synthetic products of fine structure are obtained.

Abstract translation: 多种类型的材料粉末以混合状态容纳在容纳室中，并且材料粉末连续地经受自发热反应，引起当混合材料粉末合成时释放的反应热引起的材料粉末之间的化学反应 。 由于自放热反应而产生的高温合成材料在刚刚完成自放热反应之后利用电磁力进行加压。 放热反应由包括点火电极的点火电路引起，并且电磁力由包括电流引导装置的电磁力产生电路产生。 这些电路通过继电器电路连接和调节。 得到精细结构的合成产物。