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公开(公告)号：US20100123267A1
公开(公告)日：2010-05-20
申请号：US12583429
申请日：2009-08-20
Applicant: Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian , Kai Liu , Yang Wei
Inventor： Kai-Li Jiang , Chen Feng , Lin Xiao , Zhuo Chen , Liang Liu , Shou-Shan Fan , Qun-Qing Li , Li Qian , Kai Liu , Yang Wei
IPC: B29C55/00
CPC classification number: B29C55/04 , B29K2105/162 , D02J1/22
Abstract: A method for stretching a carbon nanotube film includes providing one or more carbon nanotube films and one or more elastic supporters, attaching at least one portion of the one or more carbon nanotube films to the one or more elastic supporters, and stretching the elastic supporters.
Abstract translation: 拉伸碳纳米管膜的方法包括提供一个或多个碳纳米管膜和一个或多个弹性支撑体，将一个或多个碳纳米管膜的至少一部分附着到一个或多个弹性支撑体上，并拉伸弹性支撑体。
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公开(公告)号：US07683464B2
公开(公告)日：2010-03-23
申请号：US11799467
申请日：2007-04-30
IPC: H01L23/495
CPC classification number: H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/41 , H01L2224/32245 , H01L2224/37011 , H01L2224/4007 , H01L2224/40095 , H01L2224/40245 , H01L2224/40249 , H01L2224/4103 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01047 , H01L2924/01055 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
Abstract: A semiconductor package is disclosed. The package includes a leadframe having drain, source and gate leads, a semiconductor die coupled to the leadframe, the semiconductor die having a plurality of metalized source areas and a metalized gate area, a patterned source connection having a plurality of dimples formed thereon coupling the source lead to the semiconductor die metalized source areas, a patterned gate connection having a dimple formed thereon coupling the gate lead to the semiconductor die metalized gate area, a semiconductor die drain area coupled to the drain lead, and an encapsulant covering at least a portion of the semiconductor die and drain, source and gate leads.
Abstract translation: 公开了半导体封装。 该封装包括具有漏极，源极和栅极引线的引线框架，耦合到引线框架的半导体管芯，具有多个金属化源极区域和金属化栅极区域的半导体管芯，具有形成在其上的多个凹坑的图案化源极连接， 源极引导到半导体芯片金属化源极区域，具有形成在其上的凹坑的图案化栅极连接将栅极引线耦合到半导体管芯金属化栅极区域，耦合到漏极引线的半导体管芯漏极区域和覆盖至少一部分的密封剂 的半导体管芯和漏极，源极和栅极引线。
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公开(公告)号：US20100000988A1
公开(公告)日：2010-01-07
申请号：US12460858
申请日：2009-07-23
Applicant: Chen Feng , Kai Liu , Ding Wang , Kai-Li Jiang , Chang-Hong Liu , Shou-Shan Fan
Inventor： Chen Feng , Kai Liu , Ding Wang , Kai-Li Jiang , Chang-Hong Liu , Shou-Shan Fan
CPC classification number: H05B3/145 , H05B3/265 , H05B3/28 , H05B3/34 , H05B2203/005 , H05B2203/007 , H05B2203/011 , H05B2203/013 , H05B2203/014 , H05B2203/017 , H05B2203/032 , H05B2214/04 , Y10T29/49208 , Y10T156/10 , Y10T156/1002
Abstract: An apparatus includes a linear heater. The linear heater includes a linear supporter, a heating element and at least two electrodes. The heating element is located on the linear supporter and includes a carbon nanotube structure. The at least two electrodes are separately located and electrically connected to the heating element.
Abstract translation: 一种装置包括线性加热器。 线性加热器包括线性支撑件，加热元件和至少两个电极。 加热元件位于线性支撑体上并且包括碳纳米管结构。 至少两个电极分开定位并电连接到加热元件。
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公开(公告)号：US20090301993A1
公开(公告)日：2009-12-10
申请号：US12319595
申请日：2009-01-08
Applicant: Chen Feng , Kai Liu , Yong-Chao Zhai , Kai-Li Jiang , Shou-Shan Fan
Inventor： Chen Feng , Kai Liu , Yong-Chao Zhai , Kai-Li Jiang , Shou-Shan Fan
IPC: C23F1/00
CPC classification number: C01B31/0233 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/168 , C01B2202/08 , Y10S977/734 , Y10S977/742
Abstract: A method for making a carbon nanotube film includes the steps of providing an array of carbon nanotubes, treating the array of carbon nanotubes by plasma, and pulling out a carbon nanotube film from the array of carbon nanotubes treated by the plasma.
Abstract translation: 制造碳纳米管膜的方法包括以下步骤：提供碳纳米管阵列，通过等离子体处理碳纳米管阵列，并从由等离子体处理的碳纳米管阵列拉出碳纳米管膜。
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公开(公告)号：US20090294934A1
公开(公告)日：2009-12-03
申请号：US12130663
申请日：2008-05-30
IPC: H01L23/495 , H01L21/56
CPC classification number: H01L23/49524 , H01L23/4334 , H01L23/49551 , H01L23/49562 , H01L23/49568 , H01L23/544 , H01L24/28 , H01L24/29 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2223/54486 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/40095 , H01L2224/40245 , H01L2224/451 , H01L2224/48095 , H01L2224/48247 , H01L2224/48465 , H01L2224/73219 , H01L2224/73221 , H01L2224/83801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2924/3512 , H01L2224/45099 , H01L2224/05599
Abstract: A clip for a semiconductor device package may include two or more separate electrically conductive fingers electrically connected to each other by one or more electrically conductive bridges. A first end of at least finger is adapted for electrical contact with a lead frame. The bridges are adapted to provide electrical connection to a top semiconductor region of a semiconductor device and may also to provide heat dissipation path when a top surface of the fingers is exposed. A semiconductor device package may include the clip along with a semiconductor device and a lead frame. The semiconductor device may have a first and semiconductor regions on top and bottom surfaces respectively. The clip may be electrically connected to the top semiconductor region at the bridges and electrically connected to the lead frame at a first end of at least one of the fingers.
Abstract translation: 用于半导体器件封装的夹子可以包括通过一个或多个导电桥彼此电连接的两个或更多个分离的导电指状物。 至少手指的第一端适于与引线框架电接触。 桥适于提供与半导体器件的顶部半导体区域的电连接，并且还可以在手指的顶表面暴露时提供散热路径。 半导体器件封装可以包括夹子以及半导体器件和引线框架。 半导体器件可以分别在顶表面和底表面上具有第一半导体区域和半导体区域。 夹子可以在桥接处电连接到顶部半导体区域，并且在至少一个手指的第一端处电连接到引线框架。
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Patent Agency Ranking
公开(公告)号：US07612439B2
公开(公告)日：2009-11-03
申请号：US11316614
申请日：2005-12-22
Applicant: Xiaotian Zhang , Argo Chang , James Lee , Ryan Huang , Kai Liu , Ming Sun
Inventor： Xiaotian Zhang , Argo Chang , James Lee , Ryan Huang , Kai Liu , Ming Sun
IPC: H01L23/495 , H01L23/48
CPC classification number: H01L23/49575 , H01L23/49562 , H01L24/48 , H01L24/49 , H01L2224/48247 , H01L2224/48465 , H01L2224/49111 , H01L2224/49171 , H01L2224/49431 , H01L2924/00014 , H01L2924/01006 , H01L2924/01015 , H01L2924/01027 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599
Abstract: A composite semiconductor package is disclosed. The package includes a lead frame having first and second die bonding pads, the first and second die bonding pads having a large lateral separation therebetween, a first device bonded to the first die bonding pad, a second device bonded to the second die bonding pad, a plurality of first leads coupled to the first die bonding pad, a plurality of second leads coupled to the second die bonding pad, and an encapsulant covering the lead frame, the first and second devices and at least a portion of the first and second pluralities of leads. The package may be a TSSOP-8 composite package having a common drain MOSFET pair and an IC.
Abstract translation: 公开了一种复合半导体封装。 封装包括具有第一和第二裸片接合焊盘的引线框架，第一和第二管芯接合焊盘之间具有大的横向间隔，接合到第一管芯接合焊盘的第一器件，与第二管芯接合焊盘接合的第二器件， 耦合到第一裸片焊接焊盘的多个第一引线，耦合到第二管芯焊盘的多个第二引线以及覆盖引线框架的密封剂，第一和第二器件以及第一和第二多个元件的至少一部分 的领导。 该封装可以是具有公共漏极MOSFET对和IC的TSSOP-8复合封装。
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公开(公告)号：US20090258458A1
公开(公告)日：2009-10-15
申请号：US12384100
申请日：2009-03-30
Applicant: Xiaotian Zhang , Kai Liu , Ming Sun
Inventor： Xiaotian Zhang , Kai Liu , Ming Sun
CPC classification number: H01L23/49562 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L2224/05552 , H01L2224/05553 , H01L2224/0603 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48247 , H01L2224/48465 , H01L2224/49111 , H01L2224/49113 , H01L2224/49171 , H01L2224/4943 , H01L2224/73265 , H01L2224/85 , H01L2924/01005 , H01L2924/01013 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: A dual flat non-leaded semiconductor package is disclosed. A method of making a dual flat non-leaded semiconductor package includes forming a leadframe having a die bonding area with an integral drain lead, a gate lead bonding area and a source lead bonding area, the gate lead bonding area and a source lead bonding area being of increased area; bonding a die to the die bonding area; coupling a die source bonding area to the source lead bonding area; coupling a die gate bonding area to the gate lead bonding area; and partially encapsulating the die, the drain lead, the gate lead and the source lead to form the dual flat non-leaded semiconductor package.
Abstract translation: 公开了一种双平面无铅半导体封装。 制造双平面非铅半导体封装的方法包括：形成具有集成漏极引线，栅极引线接合区域和源极引线接合区域的管芯接合区域的引线框架，栅极引线接合区域和源极引线接合区域 面积增加; 将管芯结合到管芯接合区域; 将管芯源极接合区域耦合到所述源极引线接合区域; 将栅极接合区域耦合到栅极引线接合区域; 并且部分地封装裸片，漏极引线，栅极引线和源极引线，以形成双平面非引线半导体封装。
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公开(公告)号：US20090218673A1
公开(公告)日：2009-09-03
申请号：US12321761
申请日：2009-01-23
IPC: H01L23/48
CPC classification number: H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/41 , H01L2224/32245 , H01L2224/37011 , H01L2224/4007 , H01L2224/40095 , H01L2224/40245 , H01L2224/40249 , H01L2224/4103 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01047 , H01L2924/01055 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
Abstract: A semiconductor package is disclosed. The package includes a leadframe having drain, source and gate leads, a semiconductor die coupled to the leadframe, the semiconductor die having a plurality of metalized source areas and a metalized gate area, a patterned source connection having a plurality of dimples formed thereon coupling the source lead to the semiconductor die metalized source areas, a patterned gate connection having a dimple formed thereon coupling the gate lead to the semiconductor die metalized gate area, a semiconductor die drain area coupled to the drain lead, and an encapsulant covering at least a portion of the semiconductor die and drain, source and gate leads.
Abstract translation: 公开了半导体封装。 该封装包括具有漏极，源极和栅极引线的引线框架，耦合到引线框架的半导体管芯，具有多个金属化源极区域和金属化栅极区域的半导体管芯，具有形成在其上的多个凹坑的图案化源极连接， 源极引导到半导体芯片金属化源极区域，具有形成在其上的凹坑的图案化栅极连接将栅极引线耦合到半导体管芯金属化栅极区域，耦合到漏极引线的半导体管芯漏极区域和覆盖至少一部分的密封剂 的半导体管芯和漏极，源极和栅极引线。
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公开(公告)号：US20080087992A1
公开(公告)日：2008-04-17
申请号：US11906136
申请日：2007-09-28
IPC: H01L23/495
CPC classification number: H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/48 , H01L24/73 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/01006 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
Abstract: A semiconductor package is disclosed. The package includes a leadframe having drain, source and gate leads, and a semiconductor die coupled to the leadframe, the semiconductor die having a plurality of metalized source contacts. A bridged source plate interconnection has a bridge portion, valley portions disposed on either side of the bridge portion, plane portions disposed on either side of the valley portions and the bridge portion, and a connection portion depending from one of the plane portions, the bridged source plate interconnection connecting the source lead with the plurality of metalized source contacts. The bridge portion is disposed in a plane above the plane of the valley portions while the plane portions are disposed in a plane intermediate the plane of the bridge portion and the plane of the valley portions.
Abstract translation: 公开了半导体封装。 封装包括具有漏极，源极和栅极引线的引线框架以及耦合到引线框架的半导体管芯，该半导体管芯具有多个金属化源极触点。 桥接源极板互连具有桥接部分，设置在桥接部分的任一侧上的谷部分，设置在谷部分和桥接部分两侧的平面部分以及从平面部分之一悬挂的连接部分， 将源极引线与多个金属化源触点连接的源极板互连。 桥面部分设置在平坦部分的平面上方的平面中，而平面部分设置在桥接部分的平面和谷部的平面之间的平面中。
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公开(公告)号：US20070232359A1
公开(公告)日：2007-10-04
申请号：US11691062
申请日：2007-03-26
Applicant: Ana Lucia Pinheiro , Kai Liu , Daniel Steinbach
Inventor： Ana Lucia Pinheiro , Kai Liu , Daniel Steinbach
CPC classification number: H04B7/0695 , H04W24/00 , H04W84/12 , H04W88/08
Abstract: An access point operating in a wireless communication network includes a smart antenna for generating directional antenna beams. A method for operating the access point includes communicating with a client station using a selected directional antenna beam, with the client station initially being in a stationary position. Signal to noise ratios of signals received from the client station within a time interval are measured. At least one variation metric of a mean of the measured signal to noise ratios within the time interval is determined. This at least one determined variation metric is compared to a threshold for determining if the client station is moving.
Abstract translation: 在无线通信网络中操作的接入点包括用于产生定向天线波束的智能天线。 用于操作接入点的方法包括使用所选择的定向天线波束与客户端站进行通信，客户端站最初处于静止位置。 测量在一段时间间隔内从客户站接收的信号的信噪比。 确定时间间隔内测量的信噪比的平均值的至少一个变化度量。 将该至少一个确定的变化度量与用于确定客户端站正在移动的阈值进行比较。
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