Abstract:
The light sensor according to an exemplary embodiment of the present invention is a multi-function light sensor that is equipped at low cost with both an ultraviolet light sensor and a visible light sensor and suppresses leak current between adjacent elements on the same substrate. The light sensor is equipped with a SOI substrate, formed from a silicon oxide insulating film and a silicon semiconductor layer made up from single crystal silicon, on a silicon substrate. Photodiodes PD1 and PD2 are formed on the silicon substrate, and a photodiode UV-PD, and main portions (source, drain and channel regions) of a MOSFET configuring a control circuit, are formed in the silicon semiconductor layer on the insulating film.
Abstract:
Shields that transmit light to be detected and have conductivity are disposed on light receiving surfaces of photodiodes (1 and 2) to prevent electric charges from being induced to the photodiodes (1 and 2) by electromagnetic waves entered from an external. Two kinds of filters having light transmittance depending on a wavelength of light are disposed on the light receiving surfaces of the photodiodes (1 and 2), respectively, to take a difference between their spectral characteristics. The shield and filter may be made of, for example, polysilicon or a semiconductor thin film of a given conductivity type, and may be readily manufactured by incorporating those manufacturing processes into a semiconductor manufacturing process.
Abstract:
A photo sensor includes a first substrate, a switching element and a second substrate. The switching element is disposed at the first substrate and defined by a control electrode, and first and second current electrodes. The switching element includes a channel disposed between the first and second current electrodes. The channel has a first length to receive an incident external light. The second substrate includes a light receiving unit that is disposed corresponding to the channel. The light receiving unit has a second length longer than the first length and shorter than a third length of the control electrode.
Abstract:
A high time-resolution ultrasensitive optical detector, using a planar waveguide leakage mode, and methods for making the detector. The detector includes a stacking with a dielectric substrate, a detection element, first and second dielectric layers, and a dielectric superstrate configured to send photon(s) into the light guide formed by the first layer. The thicknesses of the layers is chosen to enable a resonant coupling between the photon(s) and a leakage mode of the guide, the stacking having an absorption resonance linked to the leakage mode for a given polarization of the photon(s).
Abstract:
This detector is intended to detect at least one photon and comprises a dielectric substrate (30), of index nO; a detecting element (32) forming a serpentine, placed on the substrate and generating a signal using the energy of the photon(s); a dielectric grating, formed of lines of index nH, alternating with lines of index nB, avec nH>nO and nH>nB, the grating being placed above the detecting element, the set grating-element presenting a resonant absorption in a given incidence and for a given polarisation; and a superstratum (40) having a refractive index ni, this superstratum being placed above the one-dimensional dielectric grating, nH being furthermore greater than ni.
Abstract:
An ultra-sensitive optical detector with large time resolution, using a surface plasmon. The optical detector is configured to detect at least one photon, and including a dielectric substrate, and on the substrate, at least one bolometric detection component, that generates an electrical signal from the energy of received photon(s). Additionally, at least one coupling component is formed on the substrate, distinct from the detection component and including a metal component, and generates a surface plasmon by interaction with the photon(s) and guiding the plasmon right up to the detection component, which then absorbs the energy of the surface plasmon.
Abstract:
A photoelectric converter comprising a resin layer that absorbs infrared light cuts out unnecessary infrared light, while the photoelectric converter has a problem that the resin layer also reduces the transmission of light in the visible range. A photoelectric converter improving the problem comprises a semiconductor substrate (2) on which photoelectric conversion elements are formed, a color filter (8) provided on the semiconductor substrate (2), and a support base (21) bonded to the color filter (8), wherein an interference filter (11) comprised of multiple thin layers of dielectric material laminated together and reflecting infrared light is provided to the support base (21). As a result, light attenuation can be minimized while infrared light is cut, and the usage efficiency of light can be increased. A photoelectric converter adjusted to the luminous efficiency of the human eye can be obtained by adjusting the light transmittance characteristics of the color filter (8) to the luminous efficiency of the human eye.
Abstract:
An optical receiver, small and inexpensive, is used for a WDM transmission system in place of a wavelength demultiplexer. In the receiver, a light-transmitting medium and a photodiode (PD) are placed on the same substrate, a wavelength-selecting filter is attached perpendicularly or obliquely to the end face of or to a cut section at the midpoint of the medium, the filter transmits only the assigned wavelength included in the incident light having multiplexed wavelengths, and the PD detects only the assigned wavelength. With an optical fiber, the fiber can be housed in a ferrule. In this case, the filter is inserted into a filter-supporting hole provided at a midpoint of the ferrule, the ferrule is fixed in a groove formed on the substrate, and an optical pathway-changing groove formed on the substrate reflects light having emerged from the optical fiber to introduce it into the PD.
Abstract:
The inventive sensor device includes a support structure, a sensing element mounted on the support substrate for sensing optical radiation and generating an electrical output signal in response thereto, and an encapsulant encapsulating the sensing element on the support structure. The encapsulant being configured to define a lens portion for focusing incident optical radiation onto an active surface of the sensing element, and an optical radiation collector portion surrounding the lens portion for collecting and redirecting optical radiation that is not incident the lens portion onto the active surface of the sensing element. The collector portion may be a parabolic reflector that reflects incident light by total internal reflection. The sensor device may be incorporated into an assembly including a diffuser positioned across an aperture, and/or may be incorporated into a vehicle accessory such as a rearview mirror assembly.
Abstract:
A photo sensor includes a first substrate, a switching element and a second substrate. The switching element is disposed at the first substrate and defined by a control electrode, and first and second current electrodes. The switching element includes a channel disposed between the first and second current electrodes. The channel has a first length to receive an incident external light. The second substrate includes a light receiving unit that is disposed corresponding to the channel. The light receiving unit has a second length longer than the first length and shorter than a third length of the control electrode.