公开(公告)号：US20050064343A1

公开(公告)日：2005-03-24

申请号：US10945897

申请日：2004-09-22

Applicant: Filippo Romanato ,  Enzo Di Fabrizio ,  Rakesh Kumar

Inventor： Filippo Romanato ,  Enzo Di Fabrizio ,  Rakesh Kumar

IPC: G03F7/00 ,  G03F7/095 ,  G03F7/20

CPC classification number: G03F7/00 ,  G03F7/095 ,  G03F7/201 ,  G03F7/2014 ,  G03F7/203

Abstract: What is described is a lithographic method for fabricating three-dimensional structures on the micrometric and submicro-metric scale, including the operations of: depositing a layer of a first resist on a substrate; depositing a layer of a second resist on the layer of the first resist; forming a pattern of the second resist by lithography; depositing a further layer of the first resist on the previous layers; and forming a pattern of the first resist by lithography. The second resist is sensitive to exposure to charged particles or to electromagnetic radiation in a different way from the first; in other words, it is transparent to the particles or to the electromagnetic radiation to which the first resist is sensitive, and therefore the processes of exposure and development of the two resists are mutually incompatible to the extent that the exposure and development of one does not interfere with the exposure and development of the other.

Abstract translation: 描述的是用于在微米和亚微米度量上制造三维结构的光刻方法，包括以下操作：在衬底上沉积第一抗蚀剂层; 在第一抗蚀剂的层上沉积第二抗蚀剂层; 通过光刻形成第二抗蚀剂的图案; 在先前的层上沉积另一层第一抗蚀剂层; 以及通过光刻形成第一抗蚀剂的图案。 第二抗蚀剂以与第一抗蚀剂不同的方式对暴露于带电粒子或电磁辐射敏感; 换句话说，对于第一抗蚀剂敏感的颗粒或电磁辐射是透明的，因此两个抗蚀剂的曝光和显影的过程相互不相容，使得曝光和显影不会 干扰另一方的曝光和发展。

公开(公告)号：US20040233410A1

公开(公告)日：2004-11-25

申请号：US10759598

申请日：2004-01-20

Applicant: Nikon Corporation

Inventor： Naomasa Shiraishi

IPC: G03B027/54

CPC classification number: G03F7/701 ,  G03F7/201 ,  G03F7/70066 ,  G03F7/70075 ,  G03F7/70108 ,  G03F7/70141 ,  G03F7/70158 ,  G03F7/70208 ,  G03F7/70316 ,  G03F7/70333 ,  G03F7/70358 ,  G03F7/70858 ,  G03F7/70883 ,  G03F7/70891 ,  G03F9/7088

Abstract: An exposure apparatus and method to expose an object with an illumination beam irradiated on a mask from a light source disposes an optical unit between the light source and an optical integrator of an illumination optical system to illuminate the mask with an illumination beam, of which an intensity distribution on a Fourier transform plane with respect to a pattern on the mask has an increased intensity portion apart from the optical axis relative to a portion of the intensity distribution on the optical axis.

公开(公告)号：US20040096751A1

公开(公告)日：2004-05-20

申请号：US08336567

申请日：1994-11-09

Inventor： FRANCIS S. M. CLUBE

IPC: G03H001/04 ,  G03H001/20

CPC classification number: G03F7/70425 ,  G03F7/201 ,  G03F7/70475 ,  G03H1/00 ,  G03H1/26

Abstract: In the manufacture of an array total internal reflection hologram for printing a pattern of high-quality microfeatures over a large area, a mask defining just a part of the pattern is used to record an array of sub-holograms, the holographic recording medium or the mask being moved with respect to each other subsequent to the recordal of each sub-hologram, thereby building up a hologram of the complete pattern to be printed.

Abstract translation: 在制造用于在大面积上打印高质量微特征图案的阵列全内反射全息图时，仅使用该图案的一部分的掩模用于记录子全息图阵列，全息记录介质或 掩模在每个子全息图的记录之后相对于彼此移动，由此构建要印刷的完整图案的全息图。

公开(公告)号：US06723474B2

公开(公告)日：2004-04-20

申请号：US09795442

申请日：2001-03-01

Applicant: Junji Tomita ,  Fumio Yamagishi

Inventor： Junji Tomita ,  Fumio Yamagishi

IPC: G03F900

CPC classification number: G03F7/201 ,  G02B5/1857 ,  G03F7/0005

Abstract: A method of fabricating a diffraction grating by utilizing a single substrate comprises the steps of forming a photosensitive material layer and a light transmission reducing film having a predetermined pattern integrally with each other on the substrate, exposing the photosensitive material layer by exposure irradiation light via the light transmission reducing film, and developing the photosensitive material layer after exposure. It is composed so that the direction of exposure and the direction of development are opposite to each other. It is possible to fabricate a diffraction grating in which each grating is formed on a predetermined substrate at a predetermined pitch and a root portion in a cross-section of each diffraction grating is constricted. In this way, it is possible to reduce or eliminate interfaces, so that the generation of noise light can be effectively suppressed and a diffraction grating having a high diffraction efficiency can be made.

Abstract translation: 通过利用单个基板制造衍射光栅的方法包括以下步骤：在基板上形成具有预定图案的感光材料层和相互一体的透光率降低膜，通过曝光照射光将光敏材料层经由 透光降低膜，曝光后显影感光材料层。 它的组成是使曝光方向和发展方向彼此相反。 可以制造衍射光栅，其中每个光栅以预定间距形成在预定基板上，并且每个衍射光栅的横截面中的根部被收缩。 以这种方式，可以减少或消除界面，从而可以有效地抑制噪声光的产生，并且可以制造具有高衍射效率的衍射光栅。

公开(公告)号：US20020196416A1

公开(公告)日：2002-12-26

申请号：US10195421

申请日：2002-07-16

Applicant: NIKON CORPORATION

Inventor： Naomasa Shiraishi

IPC: G03B027/42

CPC classification number: G03F9/7088 ,  G03F7/201 ,  G03F7/70066 ,  G03F7/701 ,  G03F7/70108 ,  G03F7/70141 ,  G03F7/70158 ,  G03F7/70208 ,  G03F7/70316 ,  G03F7/70333 ,  G03F7/70358 ,  G03F7/7055

Abstract: A projection exposure apparatus consists of: an illumination-optical system, including a light source, for irradiating a mask; a projection optical system for projecting a hyperfine pattern image on a substrate; an optical integrator for illuminating the mask in a homogeneous illuminance distribution; and a luminous flux distributing member for distributing the luminous fluxes from the integrator into two luminous fluxes in two different directions for focusing intensity distributions over the Fourier transform surface or the surface in the vicinity thereof on two portions part from the optical axis of the illumination optical system. An exposure method of exposing the mask patterns onto an exposed member comprises: a step of starting the exposure when setting a movable optical member in a first position; a step of switching the movable optical member from the first position to a second position; a step of shielding the illumination light during the switching process; and a step of finishing the irradiation of the mask with the luminous fluxes when an exposure quantity reaches a preset value.

Abstract translation: 投影曝光装置包括：用于照射掩模的包括光源的照明光学系统; 投影光学系统，用于将超精细图案图像投影在基板上; 用于在均匀的照度分布中照亮掩模的光学积分器; 以及光束分配构件，用于将来自积分器的光通量分成两个不同方向的两个光束，用于在从照明光学的光轴的两部分上的傅立叶变换表面或其附近的聚焦强度分布 系统。 将掩模图案曝光到暴露部件上的曝光方法包括：将可移动光学部件设置在第一位置时开始曝光的步骤; 将可动光学构件从第一位置切换到第二位置的步骤; 在切换过程中屏蔽照明光的步骤; 以及当曝光量达到预设值时完成具有光通量的掩模的照射的步骤。

公开(公告)号：US5962194A

公开(公告)日：1999-10-05

申请号：US251666

申请日：1994-05-31

Applicant: Toshiyuki Komatsu ,  Yasue Sato ,  Shin-Ichi Kawate

Inventor： Toshiyuki Komatsu ,  Yasue Sato ,  Shin-Ichi Kawate

IPC: C23C16/04 ,  G03F1/00 ,  G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/36 ,  G03F7/38 ,  H01L21/02 ,  H01L21/033 ,  H01L21/285 ,  H01L21/308 ,  H01L21/311 ,  H01L21/316 ,  H01L21/32 ,  H01L21/321 ,  H01L21/3213

CPC classification number: H01L21/02071 ,  C23C16/047 ,  G03F1/68 ,  G03F7/2002 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/2043 ,  G03F7/2053 ,  G03F7/265 ,  G03F7/36 ,  G03F7/38 ,  G03F7/7005 ,  G03F7/70841 ,  G03F7/70866 ,  G03F7/70875 ,  G03F7/70991 ,  H01L21/033 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3086 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/32 ,  H01L21/321 ,  H01L21/32139 ,  G03F7/00 ,  G03F7/0035 ,  G03F7/0042

Abstract: A processing method comprises:a first step of depositing on a substrate which is a specimen a film of any one of a semiconductor, a metal and an insulator;a second step of subjecting the surface of the film deposited in the first step, to irradiation with a beam having a given energy to produce a physical damage on the surface;a third step of subjecting the film surface on which the physical damage is produced in the second step, to selective irradiation with light to partially cause a photochemical reaction so that a mask pattern depending on the desired device structure is formed on the film surface; anda fourth step of carrying out photoetching using as a shielding member the mask pattern formed in the third step.

Abstract translation: 一种处理方法，包括：第一步，在半导体，金属和绝缘体中的任一个的膜上沉积作为样本的基板; 在第一步骤中沉积的膜的表面经受具有给定能量的束照射以在表面上产生物理损伤的第二步骤; 在第二步骤中对产生物理损伤的膜表面进行第三步的选择性照射以部分地引起光化学反应，使得在膜表面上形成根据期望的器件结构的掩模图案; 以及第四步骤，使用在第三步骤中形成的掩模图案作为屏蔽构件进行光刻。

公开(公告)号：US5920786A

公开(公告)日：1999-07-06

申请号：US60894

申请日：1998-05-14

Applicant: Tuan D. Pham ,  Michael K. Templeton

Inventor： Tuan D. Pham ,  Michael K. Templeton

IPC: G03F7/00 ,  G03F7/20 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/762 ,  H01L29/68 ,  G03C5/00 ,  G03F9/00

CPC classification number: H01L21/3086 ,  G03F7/0035 ,  G03F7/201 ,  H01L21/3065 ,  H01L21/76232

Abstract: The present invention provides a method of constructing trenches for use in microelectronic circuit structures. A photolithographic method is used to create trenches with sloped walls shaping the photoresist masks into sloped profiles. These photoresist masks effectively shape the underlying substrate during subsequent etch steps producing sloped wall trenches. These trenches can be used as shallow trench isolation structures to isolate microelectronic circuit structures from each other.

Abstract translation: 本发明提供一种构建用于微电子电路结构的沟槽的方法。 使用光刻方法来产生具有将光致抗蚀剂掩模成形为倾斜轮廓的倾斜壁的沟槽。 这些光致抗蚀剂掩模在随后的蚀刻步骤中有效地塑造下面的衬底，产生倾斜的壁沟槽。 这些沟槽可以用作浅沟槽隔离结构，以隔离微电子电路结构。

公开(公告)号：US5465220A

公开(公告)日：1995-11-07

申请号：US69853

申请日：1993-06-01

Applicant: Tamae Haruki ,  Kenji Nakagawa ,  Masao Taguchi ,  Hiroyuki Tanaka ,  Satoru Asai ,  Isamu Hanyu

Inventor： Tamae Haruki ,  Kenji Nakagawa ,  Masao Taguchi ,  Hiroyuki Tanaka ,  Satoru Asai ,  Isamu Hanyu

IPC: G03F7/20 ,  G03F7/207 ,  G06F9/00

CPC classification number: G03F7/70566 ,  G03F7/201 ,  G03F7/70091 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70241 ,  G03F7/70283 ,  G03F7/70583

Abstract: An optical exposure method in photolithography applied for precise processing when semiconductor devices are produced. A pattern on a photomask is projected and exposed on a register on a base plate with an exposure device including a deformation illumination system, a photomask and a projection lens. The deformation illumination system is composed of a light source, a diaphragm and a condenser lens, and the diaphragm is provided with a linear through-hole. The optical exposure method uses a ray of linear light for illumination or two rays of linear light for illumination that are parallel with the pattern. The two rays of linear light are symmetrical with respect to an optical axis. These rays are parallel with the pattern in a position separate from the optical axis of the exposure device when the photomask pattern is a line and space pattern.

公开(公告)号：US5289231A

公开(公告)日：1994-02-22

申请号：US992772

申请日：1992-12-18

Applicant: Nobutaka Magome ,  Hiromitsu Iwata ,  Junichi Morino ,  Toru Kiuchi

Inventor： Nobutaka Magome ,  Hiromitsu Iwata ,  Junichi Morino ,  Toru Kiuchi

IPC: G03F7/20 ,  G11B7/26 ,  G03B27/42

CPC classification number: G11B7/261 ,  G03F7/201 ,  G03F7/70075 ,  G03F7/70358 ,  G03F7/70366

Abstract: This specification discloses a method of and an apparatus for manufacturing a disc medium which utilize the projection exposure technique of a stopper for lithography, rotate a circular photosensitive substrate which provides the disc medium at the same speed as a circular reticle having a pattern of information tracks while rotating the reticle, and irradiate the reticle with illuminating light of a slit-like shape or a sectoral shape extending in the diametrical direction of the circular reticle to thereby effect rotation scan exposure.

Abstract translation: 本说明书公开了一种制造盘式介质的方法和装置，其利用用于光刻的止动器的投影曝光技术，旋转圆形感光基片，以与具有信息轨迹图案的圆形掩模版相同的速度提供光盘介质 同时旋转掩模版，并用沿着圆形掩模版的直径方向延伸的狭缝状或扇形的照明光照射光罩，从而进行旋转扫描曝光。

公开(公告)号：US4157935A

公开(公告)日：1979-06-12

申请号：US863827

申请日：1977-12-23

Applicant: Erik R. Solyst

Inventor： Erik R. Solyst

IPC: B41J2/135 ,  B41J2/16 ,  G03F7/20 ,  H01L21/306 ,  H01L21/308

CPC classification number: B41J2/1631 ,  B41J2/162 ,  B41J2/1629 ,  G03F7/201

Abstract: Nozzle arrays for ink jet recording are produced by preferred chemical etching of a substrate material which frequently has a non-uniform thickness. The preferred substrate is a monocrystalline silicon wafer and the 100 plane surface of the wafer is coated with etchant masking material and the resist coated wafer is held in close physical contact with a base member. A suitable mask member which defines a nozzle array pattern is spaced a predetermined distance from the base member and is positioned parallel to the base member. The wafer is then exposed through the mask by a suitable light source arranged at a suitable angle while the wafer is simultaneously rotated about an axis perpendicular to the wafer. The wafer is then exposed to a chemical anisotropic etching agent to produce a uniform array of nozzles in the wafer wherein the lateral walls of the nozzles are substantially in the "111" plane of the wafer. The masking material is then stripped from the wafer.

Abstract translation: 用于喷墨记录的喷嘴阵列通过对通常具有不均匀厚度的基底材料的优选化学蚀刻来制造。 优选的衬底是单晶硅晶片，并且晶片的100个平面表面涂覆有蚀刻掩蔽材料，并且抗蚀剂涂覆的晶片与基底构件保持紧密的物理接触。 限定喷嘴阵列图案的合适的掩模构件与基座构件隔开预定的距离并且平行于基座构件定位。 然后通过适当的光源以适当的角度将晶片曝光通过掩模，同时晶片围绕垂直于晶片的轴线同时旋转。 然后将晶片暴露于化学各向异性蚀刻剂以在晶片中产生均匀的喷嘴阵列，其中喷嘴的侧壁基本上在晶片的“111”平面中。 然后将掩模材料从晶片剥离。