公开(公告)号：US20240241446A1

公开(公告)日：2024-07-18

申请号：US18620262

申请日：2024-03-28

Applicant: Intel Corporation

Inventor： Marvin Paik ,  Charles H. Wallace ,  Leonard Guler ,  Elliot N. Tan ,  Shengsi Liu ,  Vivek Vishwakarma ,  Izabela Samek ,  Mohammadreza Soleymaniha

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/027

CPC classification number: G03F7/2022 ,  G03F7/2004 ,  G03F7/201 ,  G03F7/70033 ,  G03F7/7005 ,  G03F7/70525 ,  G03F7/7055 ,  G03F7/70725 ,  H01L21/0275

Abstract: Apparatus and methods are disclosed. An example lithography apparatus includes an ultraviolet (UV) source to expose a photoresist layer to UV light; and an extreme ultraviolet (EUV) source coupled to the UV source, the EUV source to expose the photoresist layer to EUV light to via a photomask, a combination of the UV light and the EUV light provide a pattern on the photoresist layer when a developer solution is applied to the photoresist layer.

公开(公告)号：US20240184209A1

公开(公告)日：2024-06-06

申请号：US18060593

申请日：2022-12-01

Applicant: Intel Corporation

Inventor： Changhua LIU ,  Bai NIE ,  Robert MAY

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/201 ,  G03F7/0007 ,  G03F7/2006 ,  G03F7/2014

Abstract: The present disclosure is directed to a lithographic patterning system including a stage for supporting a substrate with a photo-definable polymer layer, a first actinic radiation source, which is configured to propagate light along a first optical axis, a first mask for patterning the propagated light from the first actinic radiation source, a second actinic radiation source, which is configured to propagate light along a second optical axis, and a second mask for patterning the propagated light from the second actinic radiation source. In a method, first and second propagated lights form an intersection in the photo-definable polymer layer, and a patterned semiconductor component is formed at the intersection.

公开(公告)号：US11977246B2

公开(公告)日：2024-05-07

申请号：US18120520

申请日：2023-03-13

Applicant: Applied Materials, Inc.

Inventor： Yongan Xu ,  Rutger Meyer Timmerman Thijssen ,  Jinrui Guo ,  Ludovic Godet

IPC: G02B5/18 ,  G03F1/42 ,  G03F7/00 ,  G03F7/20

CPC classification number: G02B5/1857 ,  G03F1/42 ,  G03F7/201 ,  G03F7/70775 ,  G03F7/2002

Abstract: A method of forming patterned features on a substrate is provided. The method includes positioning a plurality of masks arranged in a mask layout over a substrate. The substrate is positioned in a first plane and the plurality of masks are positioned in a second plane, the plurality of masks in the mask layout have edges that each extend parallel to the first plane and parallel or perpendicular to an alignment feature on the substrate, the substrate includes a plurality of areas configured to be patterned by energy directed through the masks arranged in the mask layout. The method further includes directing energy towards the plurality of areas through the plurality of masks arranged in the mask layout over the substrate to form a plurality of patterned features in each of the plurality of areas.

公开(公告)号：US11837470B2

公开(公告)日：2023-12-05

申请号：US17229478

申请日：2021-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jisun Lee ,  Seokwoo Jeon ,  Sanghyun Nam

IPC: H01L21/027 ,  G03F1/26 ,  G03F7/20 ,  H01L21/02 ,  H01L29/06 ,  H01L29/775 ,  H01L29/786 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L21/0275 ,  G03F1/26 ,  G03F7/201 ,  H01L21/02603 ,  H01L21/02642 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/78696

Abstract: A method for fabricating a nano-structure includes: providing a phase mask having an uneven lattice structure to contact a photoresist film; exposing the photoresist film to a light through the phase mask such that the light is obliquely incident on a surface of the photoresist film; and developing the photoresist film to form a nano-structure.

公开(公告)号：US20190088472A1

公开(公告)日：2019-03-21

申请号：US16178893

申请日：2018-11-02

Applicant: Micron Technology, Inc.

Inventor： Scott E. Sills ,  Gurtej S. Sandhu

IPC: H01L21/027 ,  H01L21/768 ,  G03F7/38 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/16 ,  G03F7/26

CPC classification number: H01L21/0274 ,  G03F7/0035 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/201 ,  G03F7/26 ,  G03F7/38 ,  H01L21/76885 ,  H01L21/76897

Abstract: A method of forming a semiconductor device structure comprises forming a preliminary structure comprising a substrate, a photoresist material over the substrate, and a plurality of structures longitudinally extending through the photoresist material and at least partially into the substrate. The preliminary structure is exposed to electromagnetic radiation directed toward upper surfaces of the photoresist material and the plurality of structures at an angle non-orthogonal to the upper surfaces to form a patterned photoresist material. The patterned photoresist material is developed to selectively remove some regions of the patterned photoresist material relative to other regions of the patterned photoresist material. Linear structures substantially laterally aligned with at least some structures of the plurality of structures are formed using the other regions of the patterned photoresist material. Additional methods of forming a semiconductor device structure are also described.

公开(公告)号：US20180307138A1

公开(公告)日：2018-10-25

申请号：US15767990

申请日：2016-10-13

Applicant: MicroTau IP Pty Ltd

Inventor： Henry Claudius BILINSKY

IPC: G03F7/038 ,  B64G1/22 ,  G03F7/20 ,  G03F7/24 ,  G03F7/30

CPC classification number: G03F7/038 ,  B64G1/22 ,  C09D133/00 ,  G03F7/201 ,  G03F7/24 ,  G03F7/30

Abstract: In one aspect, there is provided a method of creating a microstructure pattern on an exterior surface of an aircraft, boat, automobile or other vehicle is disclosed. A layer of photopolymer (44) is applied to the top coat or substrate (43) by nozzles (45). The photopolymer is selectively irradiated to activate its photoinitiator and the unirradiated polymer is removed. The irradiation can be via a mask (49) which does not come into contact with the polymer, or via a beam splitting arrangement (63, 64) or a diffraction grating (71). The pattern can be formed by either leaving the exposed photopolymer in situ, or using the exposed photopolymer to mask the substrate, etching the substrate, and then removing the exposed photopolymer. In another aspect, there is provided a method 1100 comprising the step 1102 of applying a layer of photocurable material to the exterior surface, the step 1104 of irradiating the photocurable material with radiation including a predetermined irradiation intensity profile, and the step 1106 of removing uncured photocurable material to form the microstructure pattern. The radiation initiates curing of the irradiated photocurable material, causing a curing depth profile across the layer of the photocurable material corresponding to the selected intensity pro file.

公开(公告)号：US20180203357A1

公开(公告)日：2018-07-19

申请号：US15742738

申请日：2016-07-07

Applicant: GLUNZ & JENSEN A/S

Inventor： Joachim SPIES

IPC: G03F7/20 ,  B41C1/00 ,  H05B41/38

CPC classification number: G03F7/2004 ,  B41C1/00 ,  G03F7/201 ,  G03F7/70558 ,  G03F7/70791 ,  H01F38/10 ,  H05B41/38 ,  H05B41/3922

Abstract: There is provided method for controlling radiation emitting from one or more tubular lamps in an exposure apparatus for exposing a photosensitive element to the radiation. The method involves adjusting an adjustable ballast connected to the one or more lamps thereby adjusting the power received by the one or more lamps, wherein adjusting the ballast of the one or more lamps is based on the actual temperature and radiation of the one or more lamps.

公开(公告)号：US20180173103A1

公开(公告)日：2018-06-21

申请号：US15828870

申请日：2017-12-01

Applicant: Tokyo Electron Limited

Inventor： Seiji NAGAHARA ,  Masaru Tomono ,  Nobutaka Fukunaga ,  Gousuke Shiraishi

IPC: G03F7/20 ,  H01L21/027

CPC classification number: G03F7/7055 ,  G03F7/16 ,  G03F7/201 ,  G03F7/2022 ,  G03F7/30 ,  G03F7/7005 ,  G03F7/70133 ,  G03F7/70558 ,  H01L21/027 ,  H01L21/67115 ,  H01L21/6715

Abstract: An illuminance distribution response amount as the change amount of the illuminance distribution pattern, associating the position in the irradiation region in the lengthwise direction with the change amount of the illuminance with respect to the change in the drive current, has previously been acquired and stored in a storage unit for each light-emitting block. There is provided an arithmetic processing unit that determines (estimates) a current command value of each of the light-emitting blocks based on a present current command value of each of the light-emitting blocks and the change amount of the illuminance distribution pattern of each light-emitting block in order to bring a present illuminance distribution pattern in the irradiation region in a lengthwise direction close to a target illuminance distribution pattern.

公开(公告)号：US20180144941A1

公开(公告)日：2018-05-24

申请号：US15818510

申请日：2017-11-20

Applicant: Marvell World Trade Ltd.

Inventor： Runzi Chang ,  Winston Lee

IPC: H01L21/265 ,  H01L21/3105 ,  H01L21/56 ,  H01L21/02 ,  H01L21/027 ,  H01L21/308 ,  H01L23/00 ,  H01L21/311

CPC classification number: H01L21/26586 ,  G03F7/11 ,  G03F7/201 ,  H01L21/02126 ,  H01L21/0274 ,  H01L21/0276 ,  H01L21/3086 ,  H01L21/31055 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/56 ,  H01L24/06

Abstract: The present disclosure describes methods and apparatuses for fabricating integrated-circuit (IC) die with tilted patterning. In some aspects, mandrels are fabricated on a material stack and occlude portions of a layer of material from a field of energy radiated at an angle of incidence relative to the mandrels. The occluded portions of the layer of material can be used to mask an underlying film to create a film pattern on a substrate of the IC die. These methods and apparatuses may enable the fabrication of IC die with features that are smaller in size than those afforded by conventional lithography processes.

公开(公告)号：US20180126721A1

公开(公告)日：2018-05-10

申请号：US15860795

申请日：2018-01-03

Applicant: Flint Group Germany GmbH

Inventor： FRANK BOYKSEN

IPC: B41C1/10 ,  G03F7/20

CPC classification number: B41C1/10 ,  G03F7/201 ,  G03F7/2016 ,  G03F7/2018 ,  G03F7/202

Abstract: Method for producing flexographic printing plates, using as starting material a photopolymerizable flexographic printing plate which at least comprises, arranged one above another, a dimensionally stable support, at least one photopolymerizable, relief-forming layer, at least comprising an elastomeric binder, an ethylenically unsaturated compound and a photoinitiator, a digitally imagable layer, comprising at least the following steps: (a) producing a mask by imaging the digitally imagable layer, (b) exposing the flexographic printing plate through the mask with actinic light, and photopolymerizing the image regions of the layer, the exposing taking place with a plurality of UV-LEDs which are arranged on at least one UV-LED strip which is moved relative to the surface of the flexographic printing plate, and (c) developing the photopolymerized layer by washing out and drying or by thermal development, characterized in that in the UV-LED strip or in a separate strip, at least one ultrasonic sensor is arranged, at least the thickness of the flexographic printing plate for exposure is determined with the at least one ultrasonic sensor, depending on the measured thickness of the flexographic printing plate, the exposing of the flexographic printing plate is controlled in respect of at least one of the following parameters: (i) number of exposure steps, (ii) exposure intensity, (iii) energy input per exposure step, (iv) duration of the individual exposure steps, (v) overall duration of exposure.