Abstract:
A method for forming interconnects onto attachment points of a wafer includes the steps of providing a mold with a plurality of cavities having a predetermined shape, depositing a release agent on surfaces of the cavities, filling the cavities with an interconnect material to form the interconnects, removing the release agent from the mold, and attaching the interconnects to the attachment points of the wafer. An adhesive layer can optionally be deposited in addition to the release layer. The adhesive layer can be used, for example, to bond the chip to a package.
Abstract:
An apparatus for placing solder bumps on a mold plate includes: a solder fill head configured for dispensing molten solder onto the mold plate, the solder fill head also configured for relative movement over the mold plate; and a control mechanism configured for controlling positions of the solder fill head relative to the mold plate. The control mechanism includes: a control input signal containing data about an ideal positioning of the solder fill head; a plurality of sensors positioned on the solder fill head, the sensors configured for providing data about a gap between the solder fill head and the mold plate; a position controller configured for receiving the gap data and comparing the gap data with the control input signal, wherein the position controller provides an inequality signal if the gap data and the control input signal are not equal; an amplifier configured for receiving the inequality signal and amplifying it; and an actuator configured for receiving the amplified inequality signal and controlling movement of the solder fill head in response to the inequality signal received. The control mechanism may be a servo control mechanism. The sensors may be gap sensors.
Abstract:
An electrical structure method of forming. The method includes forming a plurality of individual metallic structures from metallic layer formed over a first substrate. A plurality of vias are formed within a second substrate. The plurality of vias are positioned over and surrounding the plurality of metallic structures. A portion of each via is filled with solder to form solder structure surrounding an exterior surface of each metallic structure. The first substrate is removed from the metallic structures. The metallic structures comprising the solder structures are positioned over a third substrate comprising a plurality of electrically conductive pads. The metallic structures comprising the solder structures are heated to a temperature sufficient to cause the solder to melt and form an electrical and mechanical connection between each metallic structure and an associated electrically conductive pad. The second substrate is removed from the individual metallic structures.
Abstract:
A system and method for injection molding conductive bonding material into a plurality of cavities in a non-rectangular mold is disclosed. The method comprises aligning a fill head with a non-rectangular mold. The non-rectangular mold includes a plurality of cavities. The fill head is placed in substantial contact with the non-rectangular mold. Rotational motion is provided to at least one of the non-rectangular mold and the fill head while the fill head is in substantial contact with the non-rectangular mold. Conductive bonding material is forced out of the fill head toward the non-rectangular mold. The conductive bonding material is provided into at least one cavity of the plurality of cavities contemporaneous with the at least one cavity being in proximity to the fill head.
Abstract:
A solder joint comprising a solder capture pad on a substrate having a circuit; and a lead containing or a lead free solder selected from the group comprising Sn—Ag—Cu solder, Sn—Cu solder and Sn—Ag solder adhered to the solder capture pad; the solder selected from the group comprising between 0.1 and 6.0 per cent by weight Zn. A solder joint, comprising a solder capture pad on a substrate having a circuit; and a Sn—Cu lead free solder adhered to the solder capture pad, the solder comprising between 0.1 and 6.0 % by weight Zn. Formation of voids at an interface between the solder and the solder capture pad is suppressed. A method for forming solder joints using the solders.
Abstract:
A method for forming interconnects onto attachment points of a wafer includes the steps of providing a mold with a plurality of cavities having a predetermined shape, depositing a release agent on surfaces of the cavities, filling the cavities with an interconnect material to form the interconnects, removing the release agent from the mold, and attaching the interconnects to the attachment points of the wafer. An adhesive layer can optionally be deposited in addition to the release layer. The adhesive layer can be used, for example, to bond the chip to a package.
Abstract:
An apparatus and a method for the removal of excess solder or contaminant, which are encountered on the surfaces of injection mold prior to the transfer of a solder on a silicon wafer. More particularly, there is provided for the removal of excess solder, which may be present on a mold surface, without removing any solder, which is located in cavities formed in the mold, and wherein the solder is applied through an injection molded soldering process.
Abstract:
Methods of forming a conductive structure on a substrate prior to packaging, and a test probe structure generated according to the method, are disclosed. The conductive structure includes a high aspect ratio structure formed by injected molded solder. The invention can be applied to form passive elements and interconnects on a conventional semiconductor substrate after the typical BEOL, and prior to packaging. The method may provide better electromigration characteristics, lower resistivity, and higher Q factors for conductive structures. In addition, the method is backwardly compatible and customizable.
Abstract:
A solder feeding device having a reservoir, a drive unit, a first lead, and a second lead is provided. The reservoir melts solid solder wire into molten solder, while the drive unit selectively feeds the solid solder wire into the reservoir. The first and second leads are in electrical communication with the drive unit. The first lead is positioned in the reservoir so that it electrically communicates with the second lead through the molten solder when the molten solder reaches a triggering level, but so that it does not electrically communicate with the second lead when the level is below the triggering level. The drive unit feeds the solid solder wire into the reservoir based upon a state of electrical communication between the first and second leads.
Abstract:
A method for testing integrated circuit chips with probe wires on flat solder bumps and IC chips that are equipped with flat solder bumps are disclosed. In the method, an IC chip that has a multiplicity of bond pads and a multiplicity of flat solder bumps are first provided in which each of the solder bumps has a height less than ½ of its diameter on the multiplicity of bond pads. The probe wires can thus be easily used to contact the increased target area on the solder bumps for establishing electrical connection with a test circuit. The probe can further be conducted easily with all the Z height of the bumps are substantially equal. The height of the solder bumps may be suitably controlled by either a planarization process in which soft solder bumps are compressed by a planar surface, or solder bumps are formed in an in-situ mold by either a MSS or an electroplating process for forming solder bumps in the shape of short cylinders. When the MSS method is used for planting the bumps, solder bumps are transferred onto the wafer surface in a substantially flattened hemi-spherical shape.