公开(公告)号：US12022682B2

公开(公告)日：2024-06-25

申请号：US17894257

申请日：2022-08-24

Applicant: Japan Display Inc.

Inventor： Masamitsu Furuie

IPC: H10K50/844 ,  H10K50/842 ,  H10K59/122 ,  H10K59/124 ,  G02F1/1333

CPC classification number: H10K50/844 ,  H10K50/8426 ,  H10K59/122 ,  H10K59/124 ,  B32B2457/206 ,  G02F1/133311 ,  G02F2201/501

Abstract: A light-emitting element display device includes: a display area which has an organic insulating layer that is made of an organic insulating material; a peripheral circuit area which is disposed around the display area and which has the organic insulating layer; and a blocking area that is formed between the display area and the peripheral circuit area. The blocking area includes: a first blocking area configured by only one or a plurality of inorganic material layers between an insulating base substrate and an electrode layer which covers the display area and is formed continuously from the display area, and which configures one of two electrodes for allowing the light emitting area to emit the light; and a second blocking area including a plurality of layers configuring the first blocking area, and a light emitting organic layer.

公开(公告)号：US11977313B2

公开(公告)日：2024-05-07

申请号：US18051172

申请日：2022-10-31

Applicant: Lumotive, Inc.

Inventor： Gleb M. Akselrod ,  Mark C. Weidman ,  Erik Edward Josberger ,  Tyler Williamson ,  Yizhak Sabba

IPC: G02F1/29 ,  G01S7/481

CPC classification number: G02F1/292 ,  G01S7/4817 ,  G02F2201/501 ,  G02F2202/30 ,  G02F2203/24

Abstract: According to various embodiments, a tunable optical device comprises a tunable optical metasurface on a substrate with an integrated driver circuit. In some embodiments, the tunable optical device includes a photon shield layer to prevent optical radiation from disrupting operation of the driver circuit. In some embodiments, the tunable optical device includes a diagnostic circuit to detect and disable defective optical structures of the metasurface. In some embodiments, the tunable optical device includes an integrated heater circuit that maintains a liquid crystal of the metasurface above a minimum operating temperature. In some embodiments, the tunable optical device includes an integrated lidar sequencing controller, a steering pattern subcircuit, and a photodetector circuit.

公开(公告)号：US20240012275A1

公开(公告)日：2024-01-11

申请号：US17618482

申请日：2021-11-25

Applicant: HUIZHOU CHINA STAR OPTOELECTRONICS DISPLAY CO., LTD. ,  TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Meifa Peng

IPC: G02F1/1333 ,  G02F1/1335

CPC classification number: G02F1/133337 ,  G02F1/133514 ,  G02F2201/501

Abstract: Embodiment of the present application provide a liquid crystal display panel and a display device. In the liquid crystal display panel provided by the embodiments of the present application, by providing a protection film covering the edge area of the top surface of the color resist block in the test area of the first substrate, the phenomenon that the ions in the color resist block diffuse into the liquid crystal layer caused by the damage or missing of the second passivation layer can be prevented, thus solving the technical problem of blackening of the edge area of the liquid crystal display panel, and improving the display quality of the liquid crystal display panel.

公开(公告)号：US20230314893A1

公开(公告)日：2023-10-05

申请号：US18322472

申请日：2023-05-23

Applicant: View, Inc.

Inventor： Sridhar Karthik Kailasam ,  Dhairya Shrivastava ,  Zhiwei Cai ,  Robert Tad Rozbicki ,  Dane Thomas Gillaspie ,  Todd William Martin ,  Anshu Ajit Pradhan ,  Ronald M. Parker

IPC: G02F1/153

CPC classification number: G02F1/153 ,  G02F2201/508 ,  G02F2201/501

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

公开(公告)号：US11698566B2

公开(公告)日：2023-07-11

申请号：US16453891

申请日：2019-06-26

Applicant: View, Inc.

Inventor： Sridhar Karthik Kailasam ,  Dhairya Shrivastava ,  Zhiwei Cai ,  Robert T. Rozbicki ,  Dane Thomas Gillaspie ,  Todd William Martin ,  Anshu A. Pradhan ,  Ronald M. Parker

IPC: G02F1/153

CPC classification number: G02F1/153 ,  G02F2201/501 ,  G02F2201/508

Abstract: Methods are provided for fabricating electrochromic devices that mitigate formation of short circuits under a top bus bar without predetermining where top bus bars will be applied on the device. Devices fabricated using such methods may be deactivated under the top bus bar, or may include active material under the top bus bar. Methods of fabricating devices with active material under a top bus bar include depositing a modified top bus bar, fabricating self-healing layers in the electrochromic device, and modifying a top transparent conductive layer of the device prior to applying bus bars.

公开(公告)号：US11650471B1

公开(公告)日：2023-05-16

申请号：US17157076

申请日：2021-01-25

Applicant: Kinestral Technologies, Inc.

Inventor： Howard Turner ,  Howard Bergh ,  John Bass ,  Daniel Giaquinta

IPC: G02F1/153 ,  G02F1/155

CPC classification number: G02F1/1533 ,  G02F1/155 ,  G02F2001/1536 ,  G02F2001/1552 ,  G02F2201/16 ,  G02F2201/501 ,  G02F2202/36

Abstract: A monolithic tandem electrochromic device, comprising a central transparent conductor ion blocking layer, a first electrochromic multilayer stack arranged on a first surface of the central transparent conductor ion blocking layer, and a second electrochromic multilayer stack arranged on a second surface of the central transparent conductor ion blocking layer is described. The central transparent conductor ion blocking layer can comprise ion conductivities between 10−4 and 10−20 S/cm, and electrical resistivity less than 100 Ohm-cm.

公开(公告)号：US20190198533A1

公开(公告)日：2019-06-27

申请号：US16286146

申请日：2019-02-26

Applicant: Japan Display Inc.

Inventor： Yuichiro Hanyu ,  Arichika Ishida ,  Masahiro Watabe

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/786 ,  H01L29/49

CPC classification number: H01L27/1237 ,  G02F1/133345 ,  G02F1/136209 ,  G02F1/1368 ,  G02F2201/501 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02675 ,  H01L27/1225 ,  H01L27/1229 ,  H01L27/1233 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1274 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/78633 ,  H01L29/78675 ,  H01L29/7869

Abstract: A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.

公开(公告)号：US20190013333A1

公开(公告)日：2019-01-10

申请号：US16020290

申请日：2018-06-27

Applicant: Mitsubishi Electric Corporation

Inventor： Kazunori INOUE ,  Koji ODA ,  Kensuke NAGAYAMA

IPC: H01L27/12 ,  G02F1/1368 ,  G02F1/1337 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1339 ,  H01L29/423 ,  H01L29/417 ,  G09G3/36

CPC classification number: H01L27/124 ,  G02F1/133514 ,  G02F1/1337 ,  G02F1/133707 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/134363 ,  G02F1/1368 ,  G02F2001/134372 ,  G02F2001/136295 ,  G02F2201/086 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2201/501 ,  G09G3/3655 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1259 ,  H01L27/1262 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78633 ,  H01L29/78669 ,  H01L29/7869

Abstract: A TFT substrate includes: a first semiconductor layer made of a-Si, disposed on a gate insulation layer, facing to a first gate electrode; a first and a second contact layers made of oxide having semiconductor characteristics and each partially disposed in contact with the first semiconductor layer; a first and a second electrodes connected with the first and the second contact layers, respectively; a second semiconductor layer having the same composition as the first contact layer, disposed on the gate insulation layer, facing to a second gate electrode; a third and a fourth electrodes having the same composition as the first electrode and each partially disposed in contact with the second semiconductor layer; and a pixel electrode made of oxide having conductive characteristics and the same composition as the first contact layer, disposed on an insulation layer in a first region, connected with the second electrode.

公开(公告)号：US20180356702A1

公开(公告)日：2018-12-13

申请号：US15990840

申请日：2018-05-29

Applicant: E Ink Holdings Inc.

Inventor： Kuan-Yi Lin ,  Yu-Wen Chen ,  Yu-Chieh Hung ,  Chun-Yu Lu ,  Chia-Chun Yeh ,  Yi-Sheng Lin

IPC: G02F1/167 ,  G02F1/1333 ,  B32B3/10

CPC classification number: G02F1/167 ,  B32B3/10 ,  B32B2457/20 ,  G02F1/133305 ,  G02F2201/501

Abstract: A flexible laminated structure includes a first protective layer, a plurality of patterned structures, and a second protective layer. The patterned structures are disposed on the first protective layer and expose a portion of the first protective layer. Each of the patterned structures has a first width adjacent to the first protective layer and a second width away from the first protective layer, and the first width is smaller than the second width. The second protective layer is disposed on the first protective layer and covers the patterned structures and the first protective layer.

公开(公告)号：US20180040644A1

公开(公告)日：2018-02-08

申请号：US15659796

申请日：2017-07-26

Applicant: Japan Display Inc.

Inventor： Yoshinori ISHII ,  Kazufumi WATABE ,  Hidekazu MIYAKE

IPC: H01L27/12 ,  G02F1/1362 ,  H01L51/56 ,  H01L27/32 ,  H01L51/52 ,  G02F1/1368 ,  G02F1/1333

CPC classification number: H01L27/1248 ,  G02F1/1303 ,  G02F1/133345 ,  G02F1/13439 ,  G02F1/1362 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2201/501 ,  G02F2202/022 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1259 ,  H01L27/1262 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L51/5218 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/556 ,  H01L2251/558

Abstract: Separation of wirings formed on an organic passivation film is prevented in an organic EL display device or a liquid crystal display device. The organic EL display device includes a TFT formed on a substrate and an organic passivation film formed to cover the TFT. An intermediate film containing SiO or SiN is formed to cover the organic passivation film. An insulation film formed with an organic material is formed on the intermediate film. A reflective electrode is formed on the intermediate film. The reflective electrode is connected to the TFT via a through-hole formed in the organic passivation film and a through-hole formed in the intermediate film.