LAYOUT AND STRUCTURE OF MEMORY
    132.
    发明申请
    LAYOUT AND STRUCTURE OF MEMORY 有权
    存储器的布局和结构

    公开(公告)号:US20090032858A1

    公开(公告)日:2009-02-05

    申请号:US11927616

    申请日:2007-10-29

    CPC classification number: H01L27/115 H01L27/11521 H01L27/11524

    Abstract: A flash memory is provided. The flash memory features of having the select gate transistors to include two different channel structures, which are a recessed channel structure and a horizontal channel. Because of the design of the recessed channel structure, the space between the gate conductor lines, which are for interconnecting the select gates of the select gate transistors arranged on the same column, can be shortened. Therefore, the integration of the flash memory can be increased; and the process window of the STI process can be increased as well. In addition, at least one depletion-mode select gate transistor is at one side of the memory cell string. The select gate transistor of the depletion-mode is always turned on.

    Abstract translation: 提供闪存。 具有选择栅极晶体管的闪存特征包括两个不同的沟道结构,它们是凹陷沟道结构和水平沟道。 由于凹陷沟道结构的设计,可以缩短用于互连布置在同一列上的选择栅极晶体管的选择栅极的栅极导体线之间的空间。 因此,可以增加闪存的集成; 并且可以增加STI过程的处理窗口。 此外,至少一个耗尽型选择栅极晶体管位于存储单元串的一侧。 耗尽模式的选择栅晶体管总是导通。

    Stent having circumferentially deformable struts
    134.
    发明申请
    Stent having circumferentially deformable struts 有权
    支架具有周向可变形的支柱

    公开(公告)号:US20090005854A1

    公开(公告)日:2009-01-01

    申请号:US11823954

    申请日:2007-06-29

    Abstract: Disclosed is a method of treating a bodily lumen with a stent, the method comprising: disposing a stent within a bodily lumen, the stent comprising a plurality of deformable struts that are substantially circumferentially aligned and are configured to selectively deform in a circumferential direction in localized regions in the struts upon application of an outward radial force; and expanding the stent by applying the outward radial force, wherein the outward radial force causes selective deformation of the deformable struts in a localized region in the struts.

    Abstract translation: 公开了一种用支架处理体腔的方法,所述方法包括:将支架设置在体腔内,所述支架包括多个可变形的支柱,所述支架基本上沿圆周对齐并且被构造成沿局部的圆周方向选择性地变形 施加向外的径向力时支柱中的区域; 并且通过施加向外的径向力来扩张支架,其中向外的径向力引起支柱中的局部区域中的可变形支柱的选择性变形。

    Indium oxide based material and method for preparing the same
    136.
    发明授权
    Indium oxide based material and method for preparing the same 有权
    氧化铟基材料及其制备方法

    公开(公告)号:US07462302B2

    公开(公告)日:2008-12-09

    申请号:US11336142

    申请日:2006-01-20

    CPC classification number: H01B1/08

    Abstract: An indium oxide based material containing carbon, and a method for preparing the same are provided. In such a method, the carbon is added to the indium oxide based material film so that the electrical resistivity of the indium oxide based material film is decreased, and the light transmittance of the indium oxide based material in the shorter wavelength range is increased, and also the light can transmit through such a material over a broader short wavelength range. The indium oxide based material prepared by the method of the present invention has higher electrical conductivity and higher light transmittance in comparison with the conventional one without adding carbon.

    Abstract translation: 提供含有碳的氧化铟基材料及其制备方法。 在这种方法中,将碳添加到氧化铟基材料膜中,使得氧化铟基材料膜的电阻率降低,并且氧化铟基材料在较短波长范围内的透光率增加,并且 光也可以在较宽的短波长范围内透过这种材料。 通过本发明的方法制备的氧化铟基材料与不添加碳的现有技术相比,具有更高的导电性和更高的透光率。

    Fiber Bragg grating sensored segmented deflectometer for ground displacement monitoring
    138.
    发明授权
    Fiber Bragg grating sensored segmented deflectometer for ground displacement monitoring 有权
    光纤布拉格光栅传感器用于地面位移监测的分段偏转仪

    公开(公告)号:US07388190B2

    公开(公告)日:2008-06-17

    申请号:US11342927

    申请日:2006-01-30

    CPC classification number: G01C9/00 G01B11/18

    Abstract: The invention provides a monitoring device mainly for sensing ground displacement, including the fiber Bragg grating sensored deflectometer and the signal interrogator/computer system. The device uses a segmented design that consists of a flexible tube (referred to as the flexible segment) and two rigid segments and thus referred to as the double hinged FBG segmented deflectometer (DH-FBG-SD). For field installation, multiple DH-FBG-SD units are connected together to form a string as it is inserted into a grouted-in-place inclinometer casing. The distortion of the inclinometer casing induced by ground movement causes relative rotation of the inserted DH-FBG-SD. All of the DH-FBG-SD units are connected to an FBG interrogator/computer system situated on ground surface. The FBG signals are recorded and analyzed by the interrogator/computer system.

    Abstract translation: 本发明提供了一种主要用于感测地面位移的监测装置,包括光纤布拉格光栅传感器和信号询问器/计算机系统。 该设备使用由柔性管(称为柔性段)和两个刚性段组成的分段设计,因此被称为双铰接FBG分段偏转计(DH-FBG-SD)。 对于现场安装,多个DH-FBG-SD单元连接在一起,以便在插入灌注式倾斜仪外壳时形成一个串。 由地面运动引起的倾斜仪套管的变形引起插入的DH-FBG-SD的相对旋转。 所有的DH-FBG-SD单元都连接到位于地面上的FBG询问器/计算机系统。 FBG信号由询问器/计算机系统记录和分析。

    Cellular culture chip device
    139.
    发明申请
    Cellular culture chip device 审中-公开
    细胞培养芯片装置

    公开(公告)号:US20080044894A1

    公开(公告)日:2008-02-21

    申请号:US11797052

    申请日:2007-04-30

    CPC classification number: C12M23/16 C12M29/10

    Abstract: A cellular culture chip device includes a chip body. The chip body includes: a first flow channel having a first inlet end and a first outlet end and adapted to direct a liquid nutrient; a second flow channel adapted to direct a gellable culture medium; a medium retaining hole fluidly connected to the second flow channel and adapted to retain the gellable culture medium, the medium retaining hole having an opening connected fluidly to the first flow channel and adapted to expose the gellable culture medium to the liquid nutrient flowing through the first flow channel; a pump membrane adapted to control the flow of the liquid nutrient within the first flow channel; and a pressure channel unit to operate the pump membrane.

    Abstract translation: 细胞培养芯片装置包括芯片体。 芯片主体包括:具有第一入口端和第一出口端并适于引导液体营养物的第一流动通道; 适于引导胶凝培养基的第二流动通道; 介质保持孔,其流体地连接到第二流动通道并且适于保持可凝胶化的培养基,所述介质保持孔具有与第一流动通道流体连接的开口,并适于将可凝胶培养基暴露于流过第一流动通道的液体营养物 流通道 泵膜,其适于控制所述第一流动通道内的液体营养物的流动; 以及用于操作泵膜的压力通道单元。

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