公开(公告)号：US08766927B2

公开(公告)日：2014-07-01

申请号：US12655489

申请日：2009-12-31

Applicant: Chen Feng ,  Kai Liu ,  Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan

Inventor： Chen Feng ,  Kai Liu ,  Kai-Li Jiang ,  Liang Liu ,  Shou-Shan Fan

IPC: G06F3/041

CPC classification number: G06F3/045

Abstract: The present disclosure provides a touch panel and a display device employing the same. The touch panel includes at least one transparent layer consisting of a carbon nanotube metal composite layer including a carbon nanotube layer and a metal layer coated on the carbon nanotube layer.

Abstract translation: 本公开提供一种触摸面板和采用该触摸面板的显示装置。 触摸面板包括由包含碳纳米管层和涂覆在碳纳米管层上的金属层的碳纳米管金属复合层组成的至少一个透明层。

公开(公告)号：US20140179683A1

公开(公告)日：2014-06-26

申请号：US14235858

申请日：2012-06-18

Applicant: Kai Liu ,  Yuxia Wu

Inventor： Kai Liu ,  Yuxia Wu

IPC: A61K31/55 ,  B29C43/00 ,  A61K9/20

CPC classification number: A61K9/2027 ,  A61K9/2031 ,  A61K31/55 ,  A61K47/34 ,  B29C43/003

Abstract: Disclosed is a sustained-release preparation of ivabradine or pharmaceutically acceptable salts thereof. The preparation contains ivabradine or pharmaceutically acceptable salts thereof and a sustained-release framework material, wherein the sustained-release framework material is selected from polyoxyethylene, or a mixture of polyoxyethylene and polyvinyl acetate or polyvinyl pyrrolidone.

Abstract translation: 公开了伊伐布拉定或其药学上可接受的盐的缓释制剂。 该制剂含有伊伐布拉定或其药学上可接受的盐和缓释骨架材料，其中持续释放骨架材料选自聚氧乙烯或聚氧乙烯和聚乙酸乙烯酯或聚乙烯吡咯烷酮的混合物。

公开(公告)号：US08717559B2

公开(公告)日：2014-05-06

申请号：US12961316

申请日：2010-12-06

Applicant: Ying-Hui Sun ,  Kai Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

Inventor： Ying-Hui Sun ,  Kai Liu ,  Kai-Li Jiang ,  Shou-Shan Fan

IPC: G01J3/00 ,  G01J3/44

CPC classification number: G01N21/65 ,  G01N21/7703

Abstract: An optical fiber probe includes an optical fiber, a carbon nanotube film structure, and a number of metallic particles. The optical fiber includes a detecting end. The carbon nanotube film structure is located on a surface of the detecting end. The carbon nanotube film structure includes a number of carbon nanotubes joined by van der Waals attractive force therebetween. The metallic particles are located on outer surfaces of the carbon nanotubes.

Abstract translation: 光纤探针包括光纤，碳纳米管膜结构和多个金属颗粒。 光纤包括检测端。 碳纳米管膜结构位于检测端的表面上。 碳纳米管膜结构包括通过范德华力吸引力接合的多个碳纳米管。 金属颗粒位于碳纳米管的外表面上。

公开(公告)号：US08709867B2

公开(公告)日：2014-04-29

申请号：US13411990

申请日：2012-03-05

Applicant: Kai Liu ,  Lei Shi ,  Jun Lu ,  Anup Bhalla

Inventor： Kai Liu ,  Lei Shi ,  Jun Lu ,  Anup Bhalla

IPC: H01L21/00

CPC classification number: H01L23/49575 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49589 ,  H01L24/29 ,  H01L24/32 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/24247 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49111 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/92246 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

Abstract: A dual-leadframe multi-chip package comprises a first leadframe with a first die pad, and a second leadframe with a second die pad; a first chip mounted on the first die pad functioning as a high-side MOSFET and second chip mounted on the second die pad functioning as a low-side MOSFET. The package may further comprises a bypass capacity configured as a third chip mounted on the first die pad or integrated with the first chip. The package may further comprise a three-dimensional connecting plate formed as an integrated structure as the second die pad for electrically connecting a top contact area of the first chip to a bottom contact area of the second chip. A top connecting plate connects a top contact area of the second chip and a top contact area of the third chip to an outer pin of the first leadframe.

Abstract translation: 双引线框多芯片封装包括具有第一管芯焊盘的第一引线框架和具有第二管芯焊盘的第二引线框架; 安装在用作高边MOSFET的第一芯片焊盘上的第一芯片和安装在用作低端MOSFET的第二芯片焊盘上的第二芯片。 封装还可以包括配置为安装在第一裸片焊盘上或与第一芯片集成的第三芯片的旁路容量。 封装还可以包括形成为一体结构的三维连接板作为第二芯片焊盘，用于将第一芯片的顶部接触区域电连接到第二芯片的底部接触区域。 顶部连接板将第二芯片的顶部接触区域和第三芯片的顶部接触区域连接到第一引线框架的外部引脚。

公开(公告)号：US08680658B2

公开(公告)日：2014-03-25

申请号：US12130663

申请日：2008-05-30

Applicant: Lei Shi ,  Kai Liu ,  Ming Sun

Inventor： Lei Shi ,  Kai Liu ,  Ming Sun

IPC: H01L23/495

CPC classification number: H01L23/49524 ,  H01L23/4334 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/544 ,  H01L24/28 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2223/54486 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/451 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A clip for a semiconductor device package may include two or more separate electrically conductive fingers electrically connected to each other by one or more electrically conductive bridges. A first end of at least finger is adapted for electrical contact with a lead frame. The bridges are adapted to provide electrical connection to a top semiconductor region of a semiconductor device and may also to provide heat dissipation path when a top surface of the fingers is exposed. A semiconductor device package may include the clip along with a semiconductor device and a lead frame. The semiconductor device may have a first and semiconductor regions on top and bottom surfaces respectively. The clip may be electrically connected to the top semiconductor region at the bridges and electrically connected to the lead frame at a first end of at least one of the fingers.

Abstract translation: 用于半导体器件封装的夹子可以包括通过一个或多个导电桥彼此电连接的两个或更多个分离的导电指状物。 至少手指的第一端适于与引线框架电接触。 桥适于提供与半导体器件的顶部半导体区域的电连接，并且还可以在手指的顶表面暴露时提供散热路径。 半导体器件封装可以包括夹子以及半导体器件和引线框架。 半导体器件可以分别在顶表面和底表面上具有第一半导体区域和半导体区域。 夹子可以在桥接处电连接到顶部半导体区域，并且在至少一个手指的第一端处电连接到引线框架。

公开(公告)号：US08626315B2

公开(公告)日：2014-01-07

申请号：US13096200

申请日：2011-04-28

Applicant: Kai Liu ,  Li Fan ,  Wen-Mei Zhao ,  Ying-Hui Sun

Inventor： Kai Liu ,  Li Fan ,  Wen-Mei Zhao ,  Ying-Hui Sun

IPC: A61N1/00

CPC classification number: A61N1/0529 ,  A61N1/057

Abstract: A pacemaker includes a pulse generator, a conduction line, and a pacemaker electrode. The pacemaker electrode includes a body and an insulation layer. The body includes at least one carbon nanotube yarn. The carbon nanotube yarn includes a number of carbon nanotubes. The carbon nanotubes are interconnected along one axis of the body by van der Waals force. The insulation layer covers an outer surface of the body.

Abstract translation: 起搏器包括脉冲发生器，导线和起搏器电极。 起搏器电极包括主体和绝缘层。 身体包括至少一个碳纳米管纱线。 碳纳米管纱线包括多个碳纳米管。 碳纳米管通过范德华力与身体的一个轴线相互连接。 绝缘层覆盖主体的外表面。

公开(公告)号：US08615096B2

公开(公告)日：2013-12-24

申请号：US12719816

申请日：2010-03-08

Applicant: Liang Liu ,  Zhuo Chen ,  Kai Liu ,  Chen Feng ,  Kai-Li Jiang ,  Shou-Shan Fan

Inventor： Liang Liu ,  Zhuo Chen ,  Kai Liu ,  Chen Feng ,  Kai-Li Jiang ,  Shou-Shan Fan

IPC: H04R25/00

CPC classification number: C23C14/0005 ,  H04R23/002

Abstract: The present invention relates to a thermoacoustic device that includes an acoustic element. The acoustic element includes a substrate, a plurality of microspaces, and a metal film. The metal film is located above the substrate. A plurality of microspaces is defined between the substrate and the metal film. The metal film is partially suspended above the substrate.

Abstract translation: 本发明涉及一种包括声学元件的热声装置。 声学元件包括基底，多个微型体和金属膜。 金属膜位于基板上方。 在衬底和金属膜之间限定多个微孔。 金属膜部分悬浮在基板上方。

公开(公告)号：US08576026B2

公开(公告)日：2013-11-05

申请号：US12331492

申请日：2008-12-10

Applicant: Kai Liu ,  Robert C. Frye ,  Yaojian Lin

Inventor： Kai Liu ,  Robert C. Frye ,  Yaojian Lin

IPC: H01P3/08 ,  H01P7/08

CPC classification number: H03H7/422 ,  H01L28/10 ,  H03H7/09 ,  H03H7/1766 ,  H03H7/42

Abstract: A band-pass filter has a plurality of frequency band channels each including a first inductor having a first terminal coupled to a first balanced port and a second terminal coupled to a second balanced port. A first capacitor is coupled between the first and second terminals of the first inductor. A second inductor has a first terminal coupled to a first unbalanced port and a second terminal coupled to a second unbalanced port. The second inductor is disposed within a first distance of the first inductor to induce magnetic coupling. A second capacitor is coupled between the first and second terminals of the second inductor. A third inductor is disposed within a second distance of the first inductor and within a third distance of the second inductor to induce magnetic coupling. A second capacitor is coupled between first and second terminals of the third inductor.

Abstract translation: 带通滤波器具有多个频带信道，每个频带信道包括具有耦合到第一平衡端口的第一端子的第一电感器和耦合到第二平衡端口的第二端子。 第一电容器耦合在第一电感器的第一和第二端子之间。 第二电感器具有耦合到第一不平衡端口的第一端子和耦合到第二不平衡端口的第二端子。 第二电感器设置在第一电感器的第一距离内以引起磁耦合。 第二电容器耦合在第二电感器的第一和第二端子之间。 第三电感器设置在第一电感器的第二距离内并且在第二电感器的第三距离内，以引起磁耦合。 第二电容器耦合在第三电感器的第一和第二端子之间。

公开(公告)号：US08497160B2

公开(公告)日：2013-07-30

申请号：US13560786

申请日：2012-07-27

Applicant: François Hébert ,  Anup Bhalla ,  Kai Liu ,  Ming Sun

Inventor： François Hébert ,  Anup Bhalla ,  Kai Liu ,  Ming Sun

IPC: H01L21/60

CPC classification number: H01L24/40 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/64 ,  H01L24/29 ,  H01L24/33 ,  H01L24/37 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/83 ,  H01L2224/05624 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/40095 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40249 ,  H01L2224/4103 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/83194 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/37099

Abstract: A solder-top enhanced semiconductor device is proposed for packaging. The solder-top device includes a device die with a top metal layer patterned into contact zones and contact enhancement zones. At least one contact zone is electrically connected to at least one contact enhancement zone. Atop each contact enhancement zone is a solder layer for an increased composite thickness thus lowered parasitic impedance. Where the top metal material can not form a uniform good electrical bond with the solder material, the device die further includes an intermediary layer sandwiched between and forming a uniform electrical bond with the top metal layer and the solder layer. A method for making the solder-top device includes lithographically patterning the top metal layer into the contact zones and the contact enhancement zones; then forming a solder layer atop each of the contact enhancement zones using a stencil process for an increased composite thickness.

Abstract translation: 提出了一种焊顶增强型半导体器件进行封装。 焊料顶部器件包括具有图案化为接触区域和接触增强区域的顶部金属层的器件裸片。 至少一个接触区域电连接到至少一个接触增强区域。 每个接触增强区顶部都是一个焊料层，用于增加复合材料厚度，从而降低寄生阻抗。 在顶部金属材料不能与焊料材料形成均匀的良好电接合的情况下，器件裸片还包括夹在中间层之间并与顶部金属层和焊料层形成均匀的电接合的中间层。 制造焊料顶部器件的方法包括将顶部金属层光刻地图案化成接触区域和接触增强区域; 然后使用用于增加的复合材料厚度的模版工艺在每个接触增强区的顶部上形成焊料层。

公开(公告)号：US08467351B2

公开(公告)日：2013-06-18

申请号：US13289571

申请日：2011-11-04

Applicant: Kai Liu ,  Peter S. Wang ,  Nobuyuki Tamaki ,  Janet A. Stern-Berkowitz ,  Stephen E. Terry

Inventor： Kai Liu ,  Peter S. Wang ,  Nobuyuki Tamaki ,  Janet A. Stern-Berkowitz ,  Stephen E. Terry

IPC: H04W4/00

CPC classification number: H04W36/30 ,  H04W24/10 ,  H04W36/0094 ,  H04W36/22 ,  H04W84/047

Abstract: A method for performing radio usage measurements to support radio link operations and/or load balancing may be performed at an evolved Node B (eNB). The method may include determining a first radio usage parameter. The first radio usage parameter may be a measurement of radio usage between an eNB and at least one wireless transmit receive unit (WTRU). The method may further include determining a second radio usage parameter. The second radio usage parameter may be a measurement of radio usage between the eNB and at least one relay node (RN) served by the eNB. The method may further include utilizing at least one of the first radio usage parameter or the second radio usage parameter to evaluate at least one of evolved universal terrestrial radio access (E-UTRA) radio link operations, radio resource management (RRM), network operations and maintenance (OAM), and self-organizing networks (SON) functions or functionalities.