公开(公告)号：US06558802B1

公开(公告)日：2003-05-06

申请号：US09515253

申请日：2000-02-29

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: B32B900

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A hybrid silicon-on-silicon substrate. A thin film (2101) of single-crystal silicon is bonded to a target wafer (46). A high-quality bond is formed between the thin film and the target wafer during a high-temperature annealing process. It is believed that the high-temperature annealing process forms covalent bonds between the layers at the interface (2305). The resulting hybrid wafer is suitable for use in integrated circuit manufacturing processes, similar to wafers with an epitaxial layer.

Abstract translation: 一种混合硅硅衬底。 将单晶硅的薄膜（2101）接合到目标晶片（46）上。 在高温退火过程中，在薄膜和目标晶片之间形成高质量的结合。 相信高温退火工艺在界面处形成层间的共价键（2305）。 所得到的混合晶片适用于集成电路制造工艺，类似于具有外延层的晶片。

公开(公告)号：US06521324B1

公开(公告)日：2003-02-18

申请号：US09451984

申请日：1999-11-30

Applicant: Mark K. Debe ,  Martin B. Wolk

Inventor： Mark K. Debe ,  Martin B. Wolk

IPC: B32B2714

CPC classification number: B41M5/38207 ,  B41M5/385 ,  B41M5/42 ,  B81C1/00031 ,  B81C2201/0191 ,  H01J7/24 ,  H01L21/4803 ,  H01L21/4846 ,  H01L21/6835 ,  H01L2221/68359 ,  H01L2221/68368 ,  H05K3/046 ,  Y10S977/701 ,  Y10S977/833 ,  Y10S977/89

Abstract: Articles having a component with a surface defining microstructured features can be formed using thermal transfer elements. One example of a suitable thermal transfer element includes a microstructured layer having a surface defining microstructured features imposed on the microstructured layer. The thermal transfer element is configured and arranged for the transfer of at least a portion of the microstructured layer to a receptor while substantially preserving the microstructured features of that portion.

公开(公告)号：US20030013246A1

公开(公告)日：2003-01-16

申请号：US10223874

申请日：2002-08-20

Applicant: HRL Laboratories, LLC

Inventor： Randall L. Kubena ,  David T. Chang

IPC: H01L021/8238

CPC classification number: B81C1/0015 ,  B81B2201/0242 ,  B81C2201/014 ,  B81C2201/0191 ,  B81C2203/036 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894

Abstract: A method of making a micro electromechanical gyroscope. A cantilevered beam structure, first portions of side drive electrodes and a mating structure are defined on a first substrate or wafer; and at least one contact structure, second portions of the side drive electrodes and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer and the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer and also between the first and second portions of the side drive electrodes to cause a bond to occur therebetween. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer. The bonds are preferably eutectic bonds.

公开(公告)号：US20020106867A1

公开(公告)日：2002-08-08

申请号：US10005765

申请日：2001-11-02

Inventor： Eui-Hyeok Yang ,  Dean V. Wiberg

IPC: H01L021/30

CPC classification number: B81C3/001 ,  B81B2201/042 ,  B81B2203/0127 ,  B81C1/00357 ,  B81C2201/019 ,  B81C2201/0191 ,  B81C2203/038 ,  H01L21/2007 ,  H01L21/76251

Abstract: Techniques for transferring a membrane from one wafer to another wafer to form integrated semiconductor devices.

Abstract translation: 将膜从一个晶片转移到另一个晶片以形成集成的半导体器件的技术。

公开(公告)号：US20020081823A1

公开(公告)日：2002-06-27

申请号：US10090704

申请日：2002-03-04

Applicant: Silicon Genesis Corporation

Inventor： Nathan W. Cheung ,  Francois J. Henley

IPC: H01L021/46

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a weakened region in a selected manner at a selected depth (20) underneath the surface. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

公开(公告)号：US06294814B1

公开(公告)日：2001-09-25

申请号：US09379996

申请日：1999-08-24

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01L2900

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有将能量粒子（22）通过供体衬底（10）的表面引入到表面下方的选定深度（20）的步骤，其中颗粒具有相对较高的浓度以限定施主衬底材料（12） 高于所选深度。 能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此，所述切割动作提供了扩张切割前沿，从而将供体材料从剩余的 部分供体基质。

公开(公告)号：US06245161B1

公开(公告)日：2001-06-12

申请号：US09026116

申请日：1998-02-19

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: H01K2100

CPC classification number: H01L21/187 ,  B81C1/0038 ,  B81C2201/0191 ,  B81C2201/0192 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893 ,  Y10T428/249956

Abstract: An economical hybrid wafer utilizing a lower-quality, lower cost transfer substrate to support a higher-quality thin film. A high-quality thin film (2101) is separated from a donor wafer (2100) and bonded to a transfer, or target, substrate (46). The donor wafer is preferably single-crystal silicon optimized for device fabrication, while the transfer substrate provides mechanical support. The thin film is not grown on the transfer substrate, and thus defects in the transfer substrate are not grown into the thin film. A low-temperature bonding process can provide an abrupt junction between the target wafer and the thin film.

Abstract translation: 一种经济的混合晶圆，利用较低质量，低成本的转移基板来支持更高质量的薄膜。 将高质量薄膜（2101）与施主晶片（2100）分离并结合到转移或靶基板（46）上。 施主晶片优选是针对器件制造而优化的单晶硅，而转移衬底提供机械支撑。 薄膜不会在转印衬底上生长，因此转印衬底中的缺陷不会生长到薄膜中。 低温接合工艺可以在目标晶片和薄膜之间提供突然的接合。

公开(公告)号：US6146979A

公开(公告)日：2000-11-14

申请号：US26032

申请日：1998-02-19

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: B24C1/00 ,  B26F3/00 ,  B26F3/02 ,  B32B5/16 ,  B81C1/00 ,  H01L21/00 ,  H01L21/18 ,  H01L21/20 ,  H01L21/22 ,  H01L21/223 ,  H01L21/265 ,  H01L21/30 ,  H01L21/301 ,  H01L21/302 ,  H01L21/304 ,  H01L21/36 ,  H01L21/38 ,  H01L21/425 ,  H01L21/44 ,  H01L21/46 ,  H01L21/461 ,  H01L21/48 ,  H01L21/50 ,  H01L21/762 ,  H01L21/78 ,  H01L21/8238

CPC classification number: H01L21/187 ,  B81C1/0038 ,  H01L21/2007 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/304 ,  H01L21/7624 ,  H01L21/76254 ,  H01L21/7813 ,  B81C2201/0191 ,  B81C2201/0192 ,  Y10S117/915 ,  Y10S156/93 ,  Y10S438/974 ,  Y10S438/977 ,  Y10T156/11 ,  Y10T156/1158 ,  Y10T156/19 ,  Y10T428/21 ,  Y10T428/24893

Abstract: A technique for forming films of material (14) from a donor substrate (10). The technique has a step of introducing gas-forming particles (12) through a surface of a donor substrate (10) to a selected depth underneath the surface. The gas-forming particles form a layer of microbubbles within the substrate. A global heat treatment of the substrate then creates a pressure effect to separate a thin film of material from the substrate. Additional gas-forming particles are introduced into the donor substrate and a second thin film of material is then separated from the donor substrate. In a specific embodiment, the gas-forming particles are implanted using a plasma immersion ion implantation method.

Abstract translation: 一种从供体衬底（10）形成材料（14）的薄膜的技术。 该技术具有通过供体基板（10）的表面将气体形成颗粒（12）引导到表面下方的选定深度的步骤。 气体形成颗粒在衬底内形成微泡层。 基板的全面热处理然后产生将基材薄膜分离的压力效应。 另外的气体形成颗粒被引入到供体衬底中，然后将第二材料薄膜与供体衬底分离。 在具体实施方案中，使用等离子体浸没离子注入方法注入气体形成颗粒。

公开(公告)号：US6033974A

公开(公告)日：2000-03-07

申请号：US370975

申请日：1999-08-10

Applicant: Francois J. Henley ,  Nathan W. Cheung

Inventor： Francois J. Henley ,  Nathan W. Cheung

IPC: B81C1/00 ,  H01L21/22 ,  H01L21/30 ,  H01L21/38 ,  H01L21/46

CPC classification number: H01L21/26506 ,  B81C1/0038 ,  H01L21/76254 ,  B81C2201/0191 ,  B81C2201/0192

Abstract: A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Abstract translation: 一种用于从供体衬底（10）形成材料（12）的膜的技术。 该技术具有以选定的方式在表面下方的选定深度（20）处形成应力区域的步骤。 诸如加压流体的能量源被引导到供体基底的选定区域，以在所选择的深度（20）处引发基底（10）的受控切割作用，因此所述切割动作提供扩张切割前缘以释放供体 来自供体衬底的剩余部分的材料。

公开(公告)号：US5656512A

公开(公告)日：1997-08-12

申请号：US457643

申请日：1995-05-31

Applicant: Bruce Allan Beitman

Inventor： Bruce Allan Beitman

IPC: G01P15/12 ,  B81B3/00 ,  G01P15/08 ,  H01L21/306 ,  H01L29/84 ,  H01L21/3213

CPC classification number: B81C1/0015 ,  G01P15/0802 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81C2201/0104 ,  B81C2201/0136 ,  B81C2201/019 ,  B81C2201/0191 ,  G01P2015/0828

Abstract: A semiconductor accelerometer is formed by attaching a semiconductor layer to a handle wafer by a thick oxide layer. Accelerometer geometry is patterned in the semiconductor layer, which is then used as a mask to etch out a cavity in the underlying thick oxide. The mask may include one or more apertures, so that a mass region will have corresponding apertures to the underlying oxide layer. The structure resulting from an oxide etch has the intended accelerometer geometry of a large volume mass region supported in cantilever fashion by a plurality of piezo-resistive arm regions to a surrounding, supporting portion of the semiconductor layer. Directly beneath this accelerometer geometry is a flex-accommodating cavity realized by the removal of the underlying oxide layer. The semiconductor layer remains attached to the handle wafer by means of the thick oxide layer that surrounds the accelerometer geometry, and which was adequately masked by the surrounding portion of the top semiconductor layer during the oxide etch step. In a second embodiment support arm regions are dimensioned separately from the mass region, using a plurality of buried oxide regions as semiconductor etch stops.

Abstract translation: 半导体加速度计是通过用厚的氧化物层将半导体层附着在手柄晶片上形成的。 加速度传感器几何形状在半导体层中图案化，然后将其用作掩模以蚀刻下面的厚氧化物中的空腔。 掩模可以包括一个或多个孔，使得质量区域将具有到下面的氧化物层的对应的孔。 由氧化物蚀刻产生的结构具有通过多个压阻臂区域以半悬臂方式支撑到半导体层的周围的支撑部分的大体积质量区域的预期加速度计几何形状。 直接在该加速度计几何形状之下的是通过去除下面的氧化物层而实现的柔性容纳腔。 半导体层通过围绕加速度计几何形状的厚氧化物层保持附着到处理晶片，并且在氧化物蚀刻步骤期间，半导体层被顶部半导体层的周围部分充分掩蔽。 在第二实施例中，使用多个掩埋氧化物区域作为半导体蚀刻停止件，将支撑臂区域与质量区域分开设计。