Abstract:
A method for thermally conditioning an optical element includes irradiating the optical element with radiation, not-irradiating the optical element with the radiation, allowing heat flow between the optical element and a conditioning fluid that is held in a conditioning fluid reservoir, and providing a fluid flow of the conditioning fluid, to supply thermally conditioned fluid to the reservoir. A flow rate of the fluid during the irradiating of the optical element is lower than a flow rate of the fluid when the optical element is not-irradiated.
Abstract:
A photo-mask for use in extreme ultraviolet (EUV) lithography, in which the photo-mask has low coefficient of thermal expansion and high specific stiffness.
Abstract:
A collimation device for an X-ray beam, an optical device for analyzing a specimen by the scattering of an X-ray beam, and a collimator for an X-ray beam. The collimation device includes an enclosure configured to be under a vacuum or a controlled atmosphere, the enclosure including an inlet and an outlet for the X-ray beam and at least one plate made of a material having a diffracting periodic structure, the plate including two main faces and at least one flared aperture between the faces.
Abstract:
An x-ray diffraction imaging (XDI) system includes a plurality of x-ray sources configured to generate x-rays directed toward an object. The XDI system also includes a primary collimator positioned a distance from the plurality of x-ray sources. A plurality of nodes are defined within the primary collimator at a plurality of node distances from the plurality of x-ray sources. Each node of the plurality of nodes defines an x-ray intersection region. The XDI system further includes a supermirror assembly including a plurality of mounting rails positioned adjacent the plurality of nodes.
Abstract:
A reflector includes a reflecting surface or structure provided with a cap layer formed from Silicene or a Silicene derivative. The reflector may be provided in a lithographic apparatus.
Abstract:
A method for repairing a collector for an EUV projection exposure apparatus having a first coating and a second coating, wherein the first coating is arranged between the second coating and a surface of the collector. The method includes completely or partly removing the first coating by treatment with a first chemical solution, and applying a new first coating.
Abstract:
A method of manufacturing a projection objective (22) of a microlithographic projection exposure apparatus (10). The projection objective (22) comprises at least one mirror (M1 to M6) that each have a mirror support (241 to 246) and a reflective coating (26) applied thereon. First imaging aberrations of a pre-assembled projection objective are measured. Before the coating (26) is applied, the mirror supports (241 to 246) are provided with a desired surface deformation (34). If the mirrors (M1 to M6) are not reflective for projection light without the coating (26), measuring light is used that has another wavelength. Alternatively, two identical mirror supports (246) may be provided. One support having a reflective coating is part of the pre-assembled projection objective whose imaging aberrations are measured. The other support is provided with surface deformations before coating and mounting the support into the objective.
Abstract:
The invention concerns to a method of producing a Fresnel Zone Plate (1) for applications in high energy radiation including the following steps: supply of a substrate (2) transparent for high energy radiation, deposition of a layer (3) of a metal, a metal alloy or a metal compound on a planar surface (4) of the substrate (2), calculating a three dimensional geometrical profile (5) with a mathematical model, setting up a dosage profile (6) for an ion beam of the ion beam lithography inverse to the calculated three dimensional geometrical profile (5) and milling a three dimensional geometrical profile (5) with concentric zones into the layer (3) with ion beam lithography by means of focused ion beam.
Abstract:
An extreme ultraviolet mirror or blank production system includes: a first deposition system for depositing a planarization layer over a semiconductor substrate; a second deposition system for depositing an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; and a third deposition system for depositing a multi-layer stack over the ultra-smooth layer. The extreme ultraviolet blank includes: a substrate; a planarization layer over the substrate; an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; a multi-layer stack; and capping layers over the multi-layer stack. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a planarization layer and an ultra-smooth layer over the planarization layer; and a wafer stage for placing a wafer.
Abstract:
In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element (50) having a reflective surface (60) with a multilayer system (51) and in the case of which the reflective surface (60) has a protective layer system (59) with an uppermost layer (56) composed of silicon carbide or ruthenium, the protective layer system (59) having a thickness of between 5 nm and 25 nm.