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    Device and authentication system
    164.
    发明授权
    Device and authentication system 有权

    公开(公告)号：US10057262B2

    公开(公告)日：2018-08-21

    申请号：US14973529

    申请日：2015-12-17

    Applicant: Toppan Printing Co., Ltd.

    Inventor： Kiichi Yokoyama ,  Moyuru Kobayashi

    IPC: H04L29/06 ,  G06F21/44 ,  H04L9/32

    CPC classification number: H04L63/0876 ,  G06F21/44 ,  H04L9/3271 ,  H04L9/3278

    Abstract: A device includes a storage unit that stores generated challenges which are challenges previously generated, a determination unit that determines whether a newly generated challenge matches any of the generated challenges or not, an output unit that outputs the newly generated challenge as an unused challenge when the determination unit determines that the newly generated challenge does not match any of the generated challenges, and a registration unit that stores the newly generated challenge as a new generated challenge in the storage unit when the determination unit determines that the newly generated challenge does not match any of the generated challenges.

    PACKAGING MATERIAL FOR POWER STORAGE DEVICE AND POWER STORAGE DEVICE USING THE SAME
    165.
    发明申请
    PACKAGING MATERIAL FOR POWER STORAGE DEVICE AND POWER STORAGE DEVICE USING THE SAME 审中-公开

    公开(公告)号：US20180233709A1

    公开(公告)日：2018-08-16

    申请号：US15950420

    申请日：2018-04-11

    Applicant: TOPPAN PRINTING CO., LTD.

    Inventor： Takuya MURAKI ,  Shunsuke NAKANISHI

    IPC: H01M2/02 ,  H01M2/08 ,  H01G11/80

    Abstract: A packaging material for a power storage device includes a structure made up of a cover layer, a barrier layer, a sealant adhesive layer, and a sealant layer laminated in this general order. In the packaging material, the barrier layer has an aluminum foil layer and an anticorrosion treatment layer that is provided to a sealant layer side surface of the aluminum foil layer and faces the sealant adhesive layer. The sealant layer side surface of the aluminum foil layer has a 60° glossiness that is 690 or less in both MD and TD, and has a difference in 60° glossiness between MD and TD that is 100 or less.

    Operation tool for fluid injector using multi-microneedle device
    166.
    发明授权
    Operation tool for fluid injector using multi-microneedle device 有权

    公开(公告)号：US10046152B2

    公开(公告)日：2018-08-14

    申请号：US14689541

    申请日：2015-04-17

    Applicant: TOPPAN PRINTING CO., LTD.

    Inventor： Tomoya Sumida ,  Yumiko Ikeda ,  Masaki Kono ,  Yoshihiro Kodama ,  Kazuhiko Shiomitsu

    IPC: A61M37/00 ,  A61B17/20

    Abstract: An operation tool for a fluid injector includes a selective movement mechanism which moves the fluid injector between a first protruding position and a second protruding position in a housing of an outer cylinder. When the fluid injector is at the first protruding position, microneedles of a multi-microneedle device are protruded out to a first distance from the first open end. When the fluid injector is at the second protruding position to discharge a fluid via the microneedles, the microneedles are protruded out to a second distance from the first open end, which is shorter than the first distance. The selective movement mechanism includes a rotational-linear movement conversion mechanism which moves the fluid injector between the first and second protruding positions along a longitudinal center line of the outer cylinder based on a direction and an amount of rotation of the outer cylinder relative to the fluid injector.

    Thin film transistor array
    167.
    发明授权
    Thin film transistor array 有权

    公开(公告)号：US10038014B2

    公开(公告)日：2018-07-31

    申请号：US14861059

    申请日：2015-09-22

    Applicant: Toppan Printing Co., Ltd.

    Inventor： Mamoru Ishizaki

    IPC: H01L27/12 ,  H01L29/417 ,  H01L29/08

    CPC classification number: H01L27/1222 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/0847 ,  H01L29/41733

    Abstract: A thin film transistor array including a gate wiring connected to a gate electrode and extended in a first direction, a source wiring connected to a source electrode, a drain electrode having a gap from the source electrode, a semiconductor pattern formed at least in a portion corresponding to the gap between the source and drain electrodes, the semiconductor pattern having a region defined by extending the portion in a second direction perpendicular to the first direction, and a pixel electrode that overlaps with a capacitor electrode in the planar view. In the planar view, the drain electrode has a shape of a single line, the source electrode has a first portion in a line shape and a second portion in a sheath shape surrounding the drain electrode and keeping a space from the drain electrode, and the source wiring is narrower than the region of the semiconductor pattern.

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