Method for producing a contact structure
    13.
    发明申请
    Method for producing a contact structure 失效
    接触结构的制造方法

    公开(公告)号:US20020089342A1

    公开(公告)日:2002-07-11

    申请号:US10058483

    申请日:2002-01-28

    CPC classification number: G01R3/00 G01R1/06711 G01R1/07342

    Abstract: A contact structure for testing a semiconductor wafer, a packaged LSI or a printed circuit board is formed on a planar surface of a substrate by a photolithography technology. The contact structure is formed of a silicon base having an inclined support portion created through an anisotropic etching process, an insulation layer formed on the silicon base and abutted from the inclined support, and a conductive layer made of conductive material formed on the insulation layer so that a beam portion is created by the insulation layer and the conductive layer, where wherein the beam portion exhibits a spring force in a transversal direction of the beam portion to establish a contact force when the tip of the beam portion pressed against a contact target.

    Abstract translation: 通过光刻技术在基板的平面上形成用于测试半导体晶片,封装LSI或印刷电路板的接触结构。 接触结构由具有通过各向异性蚀刻工艺形成的倾斜支撑部分的硅基底,形成在硅基底上并与倾斜支撑件抵接的绝缘层和由形成在绝缘层上的导电材料制成的导电层形成 梁部分由绝缘层和导电层产生,其中梁部分在梁部分的横向方向上呈现弹簧力,以在梁部分的尖端压靠接触目标时建立接触力。

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