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    POWER GENERATION SYSTEM
    11.
    发明申请
    POWER GENERATION SYSTEM 审中-公开
    发电系统

    公开(公告)号：US20120064420A1

    公开(公告)日：2012-03-15

    申请号：US13224537

    申请日：2011-09-02

    Applicant: Akio Machida ,  Kensuke Kojima ,  Yuichi Ishida

    Inventor： Akio Machida ,  Kensuke Kojima ,  Yuichi Ishida

    IPC: H01M8/06 ,  F28D15/00 ,  B01D53/22 ,  F28F7/00

    CPC classification number: B01D53/22 ,  B01D2256/12 ,  B01D2256/16 ,  H01M8/0656 ,  H01M14/005 ,  H01M2250/405 ,  Y02B90/16 ,  Y02E10/52 ,  Y02E60/364 ,  Y02E60/366

    Abstract: There is provided a power generation system capable of obtaining both of electrical energy and heat energy by utilizing light energy. The power generation system includes a gas generation section including one or more containers and producing gas by absorbing light energy, each of the containers enclosing an electrolytic solution and a plurality of semiconductor elements having photoelectric conversion function, a power generation section generating electrical energy by utilizing gas generated in the gas generation section; and a heat exchanger absorbing heat energy from the inside of the container.

    Abstract translation: 提供了能够通过利用光能来获得电能和热能两者的发电系统。 发电系统包括气体发生部分，其包括一个或多个容器并通过吸收光能产生气体，每个容器包围电解液和具有光电转换功能的多个半导体元件，通过利用产生电能的发电部分 在气体发生部产生的气体; 以及从容器的内部吸收热能的热交换器。

    LASER ANNEALING METHOD AND LASER ANNEALING APPARATUS
    12.
    发明申请
    LASER ANNEALING METHOD AND LASER ANNEALING APPARATUS 有权
    激光退火方法和激光退火设备

    公开(公告)号：US20100093112A1

    公开(公告)日：2010-04-15

    申请号：US12574024

    申请日：2009-10-06

    Applicant: Katsuji Takagi ,  Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Norio Fukasawa ,  Shinsuke Haga

    Inventor： Katsuji Takagi ,  Akio Machida ,  Toshio Fujino ,  Tadahiro Kono ,  Norio Fukasawa ,  Shinsuke Haga

    IPC: H01L21/66 ,  B23K26/00

    CPC classification number: B23K26/03 ,  H01L22/26

    Abstract: An embodiment of the invention provides a laser annealing method, including the steps of radiating a laser beam to an amorphous film on a substrate while scanning the laser beam for the amorphous film, crystallizing the amorphous film, detecting a light quantity of laser beam reflected from the substrate and a scanning speed of the laser beam while the radiation and the scanning of the laser beam are carried out for the amorphous film, and controlling a radiation level and the scanning speed of the laser beam based on results of comparison of the light quantity of laser beam reflected from the substrate, and the scanning speed of the laser beam with respective preset references.

    Abstract translation: 本发明的一个实施例提供了一种激光退火方法，包括以下步骤：扫描激光束为非晶膜时，在基板上的非晶膜上照射激光，使非晶膜结晶，检测从 基板和激光束的扫描速度，同时对非晶膜进行激光束的辐射和扫描，并且基于光量的比较结果控制激光束的辐射水平和扫描速度 从基板反射的激光束和激光束的扫描速度具有各自的预设参考。

    DISPLAY DEVICE
    16.
    发明申请
    DISPLAY DEVICE 失效
    显示设备

    公开(公告)号：US20070290209A1

    公开(公告)日：2007-12-20

    申请号：US11753949

    申请日：2007-05-25

    Applicant: Toshio Fujino ,  Akio Machida ,  Tadahiro Kono

    Inventor： Toshio Fujino ,  Akio Machida ,  Tadahiro Kono

    IPC: H01L29/04

    CPC classification number: H01L21/02675 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296

    Abstract: A display including a driving substrate is provided. Arrayed on the driving substrate is a plurality of pixel electrodes and thin film transistors for driving the pixel electrodes. Each thin film transistor includes a semiconductor thin film having an active region made to be polycrystalline by irradiation with an energy beam, and a gate electrode provided so as to cross the active region. In a channel part of the active region overlapping with the gate electrode, the crystal state is varied periodically along the channel length direction, and substantially the same crystal state crosses the channel part.

    Abstract translation: 提供包括驱动基板的显示器。 排列在驱动基板上的是用于驱动像素电极的多个像素电极和薄膜晶体管。 每个薄膜晶体管包括具有通过照射能量束而被制成多晶的有源区的半导体薄膜和设置成跨越有源区的栅电极。 在与栅极重叠的有源区的沟道部分中，晶体状态沿着沟道长度方向周期性变化，并且基本相同的晶体状态与沟道部分交叉。

    Semiconductor device and its manufacturing method
    19.
    发明授权
    Semiconductor device and its manufacturing method 失效
    半导体器件及其制造方法

    公开(公告)号：US06661027B1

    公开(公告)日：2003-12-09

    申请号：US09718269

    申请日：2000-11-22

    Applicant: Akio Machida ,  Dharam Pal Gosain ,  Takashi Noguchi ,  Setsuo Usui

    Inventor： Akio Machida ,  Dharam Pal Gosain ,  Takashi Noguchi ,  Setsuo Usui

    IPC: H01L2715

    CPC classification number: H01L31/204 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/202 ,  Y02E10/52 ,  Y02P70/521

    Abstract: For manufacturing a semiconductor device, such as thin-film solar battery, comprising a base body made of an organic high polymer material, an oxide electrode film and semiconductor thin film each containing at least one kind of group IV elements on the oxide electrode film, one of the semiconductor thin films in contact with the oxide electrode film is stacked by sputtering in a non-reducing atmosphere such as atmosphere not containing hydrogen gas, for example. Thereby, it is ensured that granular products as large as and beyond 3 nm are not contained substantially at the interface between the oxide electrode film and that semiconductor thin film. Therefore, a semiconductor thin film such as amorphous semiconductor thin film can be stacked with enhanced adherence on a plastic substrate having an oxide electrode film like ITO film on its surface.

    Abstract translation: 为了制造半导体器件，例如薄膜太阳能电池，其包括由有机高分子材料制成的基体，氧化物电极膜和半导体薄膜，每个氧化物电极膜和半导体薄膜在氧化物电极膜上含有至少一种IV族元素， 与氧化物电极膜接触的半导体薄膜之一通过溅射在例如不含氢气的气氛的非还原气氛中进行堆叠。 因此，确保在氧化物电极膜和该半导体薄膜之间的界面处不大体上含有3nm以上的粒状产物。 因此，非晶半导体薄膜等半导体薄膜可以在其表面具有ITO膜等氧化物电极膜的塑料基板上具有增强的粘附性。

    Layered crystal structure oxide
    20.
    发明授权
    Layered crystal structure oxide 失效
    层状结晶氧化物

    公开(公告)号：US6143679A

    公开(公告)日：2000-11-07

    申请号：US943791

    申请日：1997-10-03

    Applicant: Naomi Nagasawa ,  Akio Machida ,  Takaaki Ami ,  Masayuki Suzuki

    Inventor： Naomi Nagasawa ,  Akio Machida ,  Takaaki Ami ,  Masayuki Suzuki

    IPC: C30B9/00 ,  C04B35/01 ,  C04B35/50

    CPC classification number: C30B29/225 ,  C30B29/32 ,  C30B9/00

    Abstract: Provided are a layered crystal structure oxide showing ferroelectricity or paraelectricity and a process for easily producing the same. A raw material containing Bi.sub.2 O.sub.3 as a flux is heated up to 1330.degree. C. or higher and 1450.degree. C. or lower at a suitable temperature-elevating rate (heating step); the raw material is maintained at this heating temperature for prescribed time (constant temperature step); and then, it is slowly cooled down to 800.degree. C. or higher and 1300.degree. C. or lower at a rate of 1.degree. C./hour or more and 20.degree. C./hour or less (slow cooling step). This makes it possible to evaporate the flux and take out directly Bi.sub.2 SrTa.sub.2 O.sub.9. In this Bi.sub.2 SrTa.sub.2 O.sub.9, Bi is partially substituted with Sr, and oxygen is selectively deficient or disordered. Or, Bi and O in the fluorite layer are relatively displaced each other in the polarization direction.

    Abstract translation: 提供了显示铁电性或顺电性的层状晶体结构氧化物及其制造方法。 将含有Bi 2 O 3作为助熔剂的原料以合适的升温速度（加热步骤）加热至1330℃以上且1450℃以下。 原料在该加热温度下保持规定时间（恒温步骤）; 然后以1℃/小时以上20℃/小时以下的速度缓慢冷却至800℃以上且1300℃以下（缓慢冷却工序）。 这使得可以蒸发通量并直接取出Bi2SrTa2O9。 在Bi2SrTa2O9中，Bi部分被Sr取代，氧被选择性地缺陷或无序。 或者，萤石层中的Bi和O在偏振方向上相对位移。

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