公开(公告)号：US20110165809A1

公开(公告)日：2011-07-07

申请号：US13062132

申请日：2009-09-03

Applicant: Masahiko Miyauchi ,  Yuichi Ishida ,  Toshio Ogasawara ,  Rikio Yokota

Inventor： Masahiko Miyauchi ,  Yuichi Ishida ,  Toshio Ogasawara ,  Rikio Yokota

IPC: B32B5/26 ,  C08G73/10 ,  C08K5/3415 ,  C09D179/08 ,  B05D3/10 ,  D04H3/16 ,  C09J5/02 ,  D04H3/14

CPC classification number: C08F290/065 ,  C07D209/48 ,  C07D487/04 ,  C08F299/00 ,  C08F299/02 ,  C08G73/1042 ,  C08G73/105 ,  C08G73/1071 ,  C08J5/24 ,  C08J2379/08 ,  C08K7/02 ,  C08L79/08 ,  C09D179/08 ,  Y10T428/24994 ,  Y10T428/24995 ,  Y10T442/2631 ,  Y10T442/671 ,  Y10T442/69

Abstract: A novel terminally modified imide oligomer having excellent solubility in organic solvents, excellent solution storage stability, and excellent molding properties such as low melt viscosity. Also, a varnish obtained by dissolving the terminally modified imide oligomer in an organic solvent; a cure product obtained by using the terminally modified imide oligomer and having excellent thermal and mechanical characteristics such as heat resistance, elastic modulus, tensile strength at break and tensile elongation at break; a prepreg; and a fiber-reinforced laminate. The soluble terminally modified imide oligomer is represented by general formula (1). In the formula, R1 and R2 each represents a divalent aromatic diamine residue; R3 and R4 each represents a tetravalent aromatic tetracarboxylic acid residue; R5 and R6 each represents a hydrogen atom or a phenyl group, with R5 or R6 being a phenyl group; m and n satisfy the following relations: m≧1, n≧0, 1≦m+n≦20 and 0.05≦m/(m+n)≦1; and the repeating units may be arranged in blocks or randomly.

Abstract translation: 一种在有机溶剂中具有优异溶解性的新型末端改性酰亚胺低聚物，优异的溶液保存稳定性，以及优异的成型性能如熔融粘度低。 另外，将末端改性酰亚胺低聚物溶解在有机溶剂中得到的清漆; 通过使用末端改性的酰亚胺低聚物得到的固化产物，具有优异的耐热性，弹性模量，断裂拉伸强度和断裂拉伸伸长率等热和机械特性。 预浸料 和纤维增强层压板。 可溶性末端改性酰亚胺低聚物由通式（1）表示。 在该式中，R 1和R 2各自表示二价芳族二胺残基; R3和R4各自表示四价芳族四羧酸残基; R5和R6各自表示氢原子或苯基，R5或R6是苯基; m和n满足以下关系：m≥1，n≥0,1＆nlE; m + n＆nlE; 20和0.05＆nlE; m /（m + n）＆nlE; 1; 并且重复单元可以以块或随机方式排列。

公开(公告)号：US07915620B2

公开(公告)日：2011-03-29

申请号：US12369463

申请日：2009-02-11

Applicant: Yuichi Ishida ,  Kazuaki Yazawa ,  Norikazu Nakayama

Inventor： Yuichi Ishida ,  Kazuaki Yazawa ,  Norikazu Nakayama

IPC: H01L27/15

CPC classification number: H01L33/645 ,  H01L33/0079 ,  H01S5/0224 ,  H01S5/02415 ,  H01S5/0261 ,  H01S5/32341 ,  H01S2301/173

Abstract: Disclosed is a light-emitting device. The light-emitting device includes an EL layer and a heat dissipation layer. The EL layer includes a first semiconductor layer, a second semiconductor layer, and an active layer, the first semiconductor layer having a first conductivity type that is one of n type and p type, the second semiconductor layer having a second conductivity type that is opposite to the first conductivity type, the active layer being provided between the first semiconductor layer and the second semiconductor layer. The heat dissipation layer has the first conductivity type and is bonded to a side of the EL layer closer to the second semiconductor layer than the first semiconductor layer.

Abstract translation: 公开了一种发光装置。 发光器件包括EL层和散热层。 EL层包括第一半导体层，第二半导体层和有源层，第一半导体层具有作为n型和p型之一的第一导电类型，第二半导体层具有相反的第二导电类型 对于第一导电类型，有源层设置在第一半导体层和第二半导体层之间。 散热层具有第一导电类型，并且被结合到比第一半导体层更靠近第二半导体层的EL层的一侧。

公开(公告)号：US20100263701A1

公开(公告)日：2010-10-21

申请号：US12755816

申请日：2010-04-07

Applicant: Kazuaki Yazawa ,  Yuichi Ishida

Inventor： Kazuaki Yazawa ,  Yuichi Ishida

IPC: H01L35/28 ,  H05K13/00

CPC classification number: H01L35/32 ,  H01L23/38 ,  H01L35/34 ,  H01L2924/0002 ,  Y10T29/49002 ,  H01L2924/00

Abstract: A thermoelectric device includes rows of thermoelectric elements, each of which includes p-type thermoelectric elements and n-type thermoelectric elements that are alternately arranged in a first direction, the n-type thermoelectric elements each having a junction area electrically connected to one of the p-type thermoelectric elements that adjoins the n-type thermoelectric element; first insulators; and a second insulator. In the thermoelectric device, the first insulators are each arranged between a corresponding one of the p-type thermoelectric elements and one of the n-type thermoelectric elements that adjoins the p-type thermoelectric element. The rows of the thermoelectric elements are arranged in a second direction perpendicular to the first direction and connected to each other. The second insulator is arranged between the rows of thermoelectric elements in such a manner that the p-type thermoelectric elements and n-type thermoelectric elements of the rows of the thermoelectric elements are electrically connected in series.

Abstract translation: 热电装置包括热电元件列，每个热电元件包括​​沿第一方向交替布置的p型热电元件和n型热电元件，n型热电元件各自具有电连接到 邻接n型热电元件的p型热电元件; 第一绝缘子 和第二绝缘体。 在热电装置中，第一绝缘体分别配置在p型热电元件中的相应的一个和邻接p型热电元件的n型热电元件中的一个之间。 热电元件排沿垂直于第一方向的第二方向排列并相互连接。 第二绝缘子以热电元件行的p型热电元件和n型热电元件串联电连接的方式配置在热电元件列之间。

公开(公告)号：US20070279870A1

公开(公告)日：2007-12-06

申请号：US11755076

申请日：2007-05-30

Applicant: Hisashi Sato ,  Yuichi Ishida ,  Masaaki Ishiguro ,  Kazuaki Nakamura

Inventor： Hisashi Sato ,  Yuichi Ishida ,  Masaaki Ishiguro ,  Kazuaki Nakamura

IPC: H05K7/20

CPC classification number: H05K7/026 ,  H01R9/226 ,  H05K1/0203 ,  H05K1/056 ,  H05K2201/0382 ,  H05K2201/092

Abstract: An electrical component is mounted a circuit board. A case covers the circuit board. The circuit board includes a plate-like metal core and an insulation portion. The insulation portion covers a surface of the metal core. The metal core is provided with a heat radiation portion exposed from the case.

Abstract translation: 电气部件安装有电路板。 案例涵盖电路板。 电路板包括板状金属芯和绝缘部。 绝缘部分覆盖金属芯的表面。 金属芯设置有从壳体露出的散热部。

公开(公告)号：US06927436B1

公开(公告)日：2005-08-09

申请号：US10429616

申请日：2003-05-05

Applicant: Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

Inventor： Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

IPC: C30B23/02 ,  H01L21/02 ,  H01L21/316 ,  H01L29/51 ,  H01L29/78 ,  H01L29/76

CPC classification number: C30B23/02 ,  C30B29/16 ,  H01L21/31604 ,  H01L21/31612 ,  H01L28/56 ,  H01L29/516 ,  H01L29/78391

Abstract: An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon substrate. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (001) orientation on the Si substrate by molecular beam epitaxy, for example. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate. If necessary, annealing is conducted in vacuum after the growth.

Abstract translation: 外延稀土氧化物（001）/硅（001）结构通过在（001）取向的硅衬底上以（001）取向外延生长二氧化铈等二氧化铈来实现。 为此，将（001）取向的Si衬底的表面通过2x1,1×2表面重建处理成二聚体结构，并将立方晶系或四方晶系稀土氧化物如CeO 2 例如通过分子束外延在Si衬底上以（001）取向外延生长。 在该生长期间，在向Si衬底的表面供给氧化剂气体之后，供给含有至少一种稀土元素的源材料。 如果需要，在生长后在真空中进行退火。

公开(公告)号：US06900020B2

公开(公告)日：2005-05-31

申请号：US10257050

申请日：2001-04-09

Applicant: Yuichi Ishida ,  Fumiaki Suzuki ,  Kazuo Murakami

Inventor： Yuichi Ishida ,  Fumiaki Suzuki ,  Kazuo Murakami

IPC: A61K38/00 ,  A61P9/12 ,  C07K14/47 ,  C12N9/64 ,  C12Q1/37 ,  G01N33/53

CPC classification number: C12N9/6486 ,  A61K38/00 ,  C07K14/4705 ,  C12Q1/37 ,  C12Y304/23015 ,  G01N2333/96472 ,  G01N2500/00

Abstract: There are provided a method for selection of a substance which is capable of controlling activation of prorenin where an adjusting ability of the activation of prorenin by protein-protein interaction in a profragment region of prorenin as indicator is used; a prorenin activation controlling substance having a function of controlling the activation of prorenin based on protein-protein interaction by a profragment region of prorenin; and hypotensor, organ hypertrophy suppressor and arterial thickening suppressor containing the prorenin activation controlling substance as an effective ingredient.

Abstract translation: 提供了一种选择能够控制肾上腺素能活化的物质的方法，其中使用在作为指示剂的肾上腺素的分段区域中通过蛋白质 - 蛋白质相互作用的蛋白质 - 蛋白质相互作用的调节能力; 具有根据蛋白质 - 蛋白质相互作用的蛋白质 - 蛋白质相互作用控制肾上腺素的活化的功能的肾上腺素能激活控制物质; 和低血压，器官肥大抑制剂和含有作为有效成分的肾上腺素激活控制物质的动脉增厚抑制剂。

公开(公告)号：US06749686B2

公开(公告)日：2004-06-15

申请号：US10127155

申请日：2002-04-19

Applicant: Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

Inventor： Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

IPC: C30B2502

CPC classification number: H01L21/02293 ,  C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02192 ,  H01L21/3147 ,  H01L21/31604 ,  H01L21/31654

Abstract: An epitaxial rare earth oxide (110)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (110) orientation on a (001)-oriented silicon substrate at a growth temperature lower than conventional ones. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (110) orientation on the Si substrate in an atmosphere containing an oxidic gas by using a source material made up of at least one kind of rare earth element. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate.

Abstract translation: 外延稀土氧化物（110）/硅（001）结构通过在（001）取向的硅衬底上以比常规的生长温度外延生长（110）取向中的二氧化铈等稀土氧化物 。 为此，将（001）取向的Si衬底的表面通过2x1,1×2表面重建处理成二聚体结构，并且外延生长立方晶系或四方晶系稀土氧化物，例如CeO 2膜 通过使用由至少一种稀土元素构成的源材料，在含有氧化性气体的气氛中在Si衬底上的（110）取向。 在该生长期间，在向Si衬底的表面供给氧化剂气体之后，供给含有至少一种稀土元素的源材料。

公开(公告)号：US06610548B1

公开(公告)日：2003-08-26

申请号：US09532793

申请日：2000-03-22

Applicant: Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

Inventor： Takaaki Ami ,  Yuichi Ishida ,  Naomi Nagasawa ,  Masayuki Suzuki ,  Akio Machida

IPC: H01L2100

CPC classification number: H01L21/02293 ,  C30B23/02 ,  C30B29/16 ,  H01L21/02192 ,  H01L21/31604 ,  H01L21/31612 ,  H01L28/56 ,  H01L29/516 ,  H01L29/78391

Abstract: An epitaxial rare earth oxide (001)/silicon (001) structure is realized by epitaxially growing a rare earth oxide such as cerium dioxide in the (001) orientation on a (001)-oriented silicon substrate. For this purpose, the surface of the (001)-oriented Si substrate is processed into a dimer structure by 2×1, 1×2 surface reconstruction, and a rare earth oxide of a cubic system or a tetragonal system, such as CeO2 film, is epitaxially grown in the (001) orientation on the Si substrate by molecular beam epitaxy, for example. During this growth, a source material containing at least one kind of rare earth element is supplied after the supply of an oxidic gas is supplied onto the surface of the Si substrate. If necessary, annealing is conducted in vacuum after the growth.

Abstract translation: 外延稀土氧化物（001）/硅（001）结构通过在（001）取向的硅衬底上以（001）取向外延生长二氧化铈等二氧化铈来实现。 为此，将（001）取向的Si衬底的表面通过2x1,1×2表面重建处理成二聚体结构，并且外延生长立方晶系或四方晶系稀土氧化物，例如CeO 2膜 例如通过分子束外延在Si衬底上的（001）取向。 在该生长期间，在向Si衬底的表面供给氧化剂气体之后，供给含有至少一种稀土元素的源材料。 如果需要，在生长后在真空中进行退火。

公开(公告)号：US20100252237A1

公开(公告)日：2010-10-07

申请号：US12729713

申请日：2010-03-23

Applicant: Mitsuo Hashimoto ,  Kazuaki Yazawa ,  Hiroto Kasai ,  Yuichi Ishida ,  Hiroyuki Ryoson

Inventor： Mitsuo Hashimoto ,  Kazuaki Yazawa ,  Hiroto Kasai ,  Yuichi Ishida ,  Hiroyuki Ryoson

IPC: F28D15/00

CPC classification number: F28D15/046 ,  H01L23/427 ,  H01L2924/0002 ,  H05K7/2029 ,  H05K7/20481 ,  H01L2924/00

Abstract: A heat transport device includes a working fluid, an evaporation portion, a condenser portion, a flow path portion, a concave portion, and a protrusion portion. The evaporation portion causes the working fluid to evaporate from a liquid phase to a vapor phase. The condenser portion communicates with the evaporation portion, and causes the working fluid to condense from the vapor phase to the liquid phase. The flow path portion causes the working fluid condensed in the condenser portion to the liquid phase to flow to the evaporation portion. The concave portion is provided on at least one of the evaporation portion and the flow path portion, in which the liquid-phase working fluid flows. The protrusion portion is made of nanomaterial protruding from an inner wall side surface of the concave portion such that the protrusion portion partially covers an opening surface of the concave portion.

Abstract translation: 热传输装置包括工作流体，蒸发部，冷凝器部，流路部，凹部和突出部。 蒸发部分使工作流体从液相蒸发成气相。 冷凝器部与蒸发部连通，使工作流体从气相冷凝成液相。 流路部使冷凝部冷凝的液相流向蒸发部。 凹部设置在液相工作流体流过的蒸发部和流路部中的至少一个上。 突出部分由从凹部的内壁侧表面突出的纳米材料制成，使得突出部分部分地覆盖凹部的开口表面。

公开(公告)号：US20100053899A1

公开(公告)日：2010-03-04

申请号：US12552794

申请日：2009-09-02

Applicant: Mitsuo Hashimoto ,  Kazuaki Yazawa ,  Yuichi Ishida ,  Hiroyuki Ryoson

Inventor： Mitsuo Hashimoto ,  Kazuaki Yazawa ,  Yuichi Ishida ,  Hiroyuki Ryoson

IPC: H05K7/20 ,  F28D15/02 ,  F28F7/00 ,  B21D53/02

CPC classification number: F28D15/046 ,  H01L23/373 ,  H01L23/427 ,  H01L2924/0002 ,  Y10T29/4935 ,  H01L2924/00

Abstract: According to an embodiment, there is provided a heat spreader including a condenser portion formed of a nanomaterial. The heat spreader further includes a first plate member, a second plate member, and a support portion. The first plate member includes a first surface, the first surface including a first area provided with the condenser portion. The second plate member includes a second surface and is arranged such that the second surface faces the first surface. The support portion protrudes from the first area of the first plate member to the second plate member, and has an end portion that is free from the nanomaterial and is in contact with the second surface of the second plate member.

Abstract translation: 根据实施例，提供一种散热器，其包括由纳米材料形成的冷凝器部分。 散热器还包括第一板构件，第二板构件和支撑部。 第一板构件包括第一表面，第一表面包括设置有冷凝器部分的第一区域。 第二板构件包括第二表面，并且被布置成使得第二表面面向第一表面。 支撑部从第一板构件的第一区域突出到第二板构件，并且具有远离纳米材料并与第二板构件的第二表面接触的端部。