公开(公告)号：US09106199B2

公开(公告)日：2015-08-11

申请号：US13500614

申请日：2010-10-04

Applicant: Chrystel Deguet ,  Laurent Clavelier ,  Emmanuel Defay ,  Alexandre Reinhardt

Inventor： Chrystel Deguet ,  Laurent Clavelier ,  Emmanuel Defay ,  Alexandre Reinhardt

IPC: H03H3/08 ,  H03H3/02 ,  H03H3/007

CPC classification number: H03H3/08 ,  H03H3/02 ,  H03H2003/0071 ,  Y10T29/42

Abstract: An acoustic wave device comprising at least one surface acoustic wave filter and one bulk acoustic wave filter, the device including, on a substrate comprising a second piezoelectric material: a stack of layers including a first metal layer and a layer of a first monocrystalline piezoelectric material, wherein the stack of layers is partially etched so as to define a first area in which the first and second piezoelectric materials are present and a second area in which the first piezoelectric material is absent; a second metallization at the first area for defining the bulk acoustic wave filter integrating the first piezoelectric material, and a third metallization at the second area for defining the surface acoustic wave filter integrating the second piezoelectric material.

Abstract translation: 一种声波装置，包括至少一个表面声波滤波器和一个体声波滤波器，该装置包括在包括第二压电材料的基板上，包括第一金属层和第一单晶压电材料层 其中，所述层的一部分被部分蚀刻以限定其中存在所述第一和第二压电材料的第一区域和不存在所述第一压电材料的第二区域; 在第一区域处的第二金属化，用于限定集成第一压电材料的体声滤波器，以及在第二区域处的第三金属化，用于限定整合第二压电材料的表面声波滤波器。

公开(公告)号：US20130106243A1

公开(公告)日：2013-05-02

申请号：US13456026

申请日：2012-04-25

Applicant: Alexandre REINHARDT ,  Emmanuel DEFAY ,  Francois PERRUCHOT

Inventor： Alexandre REINHARDT ,  Emmanuel DEFAY ,  Francois PERRUCHOT

IPC: H03H9/25

CPC classification number: H03H9/25 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02228 ,  H03H9/02622 ,  H03H9/02637 ,  H03H9/02669 ,  H03H9/02763 ,  H03H9/02803 ,  H03H9/0542 ,  H03H9/17 ,  H03H9/542 ,  H03H9/6403 ,  H03H2009/02165

Abstract: An electromechanical device having a resonator using acoustic waves propagating laterally within a piezoelectric plane resonant structure and electrodes on a face of said structure. The resonant structure comprises: a transduction region having a transduction length and generating acoustic waves; a free propagation region for the acoustic waves, adjacent to the transduction region and defined the plane of the transduction region; the resonant structure length being equal to an integer number of half-wavelengths, the resonance frequency of said resonator equaling the average propagation velocity of the wave within the structure divided by said wavelength, to adjust the quality factor of the resonator fixed by the length of the resonant structure and the coupling coefficient fixed by the ratio of the transduction length over the length of the resonant structure; the resonant structure defined by the assembly of the transduction region and the propagation region being laterally bounded by reflection regions.

Abstract translation: 一种机电装置，其具有使用在压电平面共振结构内横向传播的声波和在所述结构的面上的电极的谐振器。 谐振结构包括：具有转导长度并产生声波的转导区域; 用于声波的自由传播区域，邻近转导区域并限定换能区域的平面; 谐振结构长度等于半波长的整数，所述谐振器的谐振频率等于结构中的波的平均传播速度除以所述波长，以调整谐振器的质量因子固定的长度 谐振结构和耦合系数由谐振结构长度上的换能长度比固定; 由转导区域和传播区域的组装限定的共振结构由反射区域横向界定。

公开(公告)号：US08310129B2

公开(公告)日：2012-11-13

申请号：US12975974

申请日：2010-12-22

Applicant: Emmanuel Defay ,  Sebastien Boisseau ,  Ghislain Despesse ,  Brice Ivira ,  Alexandre Reinhardt

Inventor： Emmanuel Defay ,  Sebastien Boisseau ,  Ghislain Despesse ,  Brice Ivira ,  Alexandre Reinhardt

IPC: H01L41/08

CPC classification number: H03H9/02015 ,  H03H3/04 ,  H03H9/02031 ,  H03H9/173 ,  H03H9/175 ,  H03H9/583 ,  H03H9/584 ,  H03H9/585 ,  H03H2003/0414 ,  H03H2009/02196 ,  Y10T29/42

Abstract: Acoustic resonator comprising an electret, and method of producing said resonator, application to switchable coupled resonator filters.The resonator comprises: at least one piezoelectric layer (30); electrodes (24, 26) on either side of this layer; and at least one electret layer (32) between the electrodes, to apply a permanent electric field to the piezoelectric layer. The intensity of this electric field is determined to shift the resonance frequency of the resonator by a desired value. The piezoelectric layer may contain electrical charges to itself constitute the electret layer.

Abstract translation: 包括驻极体的声谐振器及其制造方法，可应用于可切换耦合的谐振滤波器。 所述谐振器包括：至少一个压电层（30）; 该层两侧的电极（24,26）; 和在电极之间的至少一个驻极体层（32），以向压电层施加永久电场。 确定该电场的强度以将谐振器的谐振频率偏移所需的值。 压电层可以包含电荷本身构成驻极体层。

公开(公告)号：US20120204415A1

公开(公告)日：2012-08-16

申请号：US13371192

申请日：2012-02-10

Applicant: Marie GORISSE ,  Alexandre REINHARDT

Inventor： Marie GORISSE ,  Alexandre REINHARDT

IPC: H04R31/00

CPC classification number: H03H9/02653 ,  H01L21/0337 ,  H03H3/0072 ,  H03H3/08 ,  H03H9/02118 ,  H03H9/02125 ,  H03H9/02338 ,  H03H9/02866 ,  H03H9/172 ,  H03H9/6409

Abstract: A process for producing an acoustic device having a phononic crystal structure comprising inclusions produced in a first medium distributed in a matrix of a second medium, to block propagation of acoustic waves within a bandgap frequency band, includes: defining geometric parameters of said inclusions, which have walls contacting said matrix, making at least one non-zero first wall angle, to the normal of the plane of said structure, said geometric parameters including said first wall angle; determining a function relating to variation in frequency position of said bandgap with said wall angle or relating to variation in width of said bandgap with said wall angle; determining said at least first angle, for a selected frequency position and/or selected width of the bandgap, from the function or functions determined beforehand; and producing said inclusions having at least said first wall angle in said matrix formed by said second medium.

Abstract translation: 一种用于制造具有声子晶体结构的声学装置的方法，包括：在分布在第二介质的矩阵中的第一介质中产生的夹杂物，以阻挡声带在带隙频带内的传播，包括：限定所述夹杂物的几何参数， 具有与所述基体接触的至少一个非零第一壁角，与所述结构的平面的法线接触，所述几何参数包括所述第一壁角; 确定与所述带隙的频率位置的变化相关的功能，或者与所述带隙的宽度的变化相关的所述壁角; 根据预先确定的功能或功能确定所选择的频率位置和/或带隙的选定宽度的至少第一角度; 并且在由所述第二介质形成的所述基体中产生至少具有所述第一壁角的所述夹杂物。

公开(公告)号：US09325293B2

公开(公告)日：2016-04-26

申请号：US13879406

申请日：2011-10-10

Applicant: Marie Gorisse ,  Alexandre Reinhardt

Inventor： Marie Gorisse ,  Alexandre Reinhardt

IPC: H03H9/56 ,  H03H9/02

CPC classification number: H03H9/564 ,  H03H9/02086 ,  H03H9/56

Abstract: An acoustic wave bandpass filter comprises at least two bulk acoustic wave resonators, laterally coupled to each other acoustically, each resonator including a film of piezoelectric material and at least a first electrode and/or a second electrode, said bulk waves propagating in a direction perpendicular to the plane of the film of piezoelectric material, characterized in that: it further comprises at least a first phononic crystal structure between said resonators such that the transmission coefficient of the lateral acoustic waves can be decreased in a direction parallel to the plane of the piezoelectric film; and the first phononic crystal structure is formed in a matrix of dielectric material or with patterns made from dielectric material.

Abstract translation: 声波带通滤波器包括至少两个在声学上彼此横向耦合的体声波谐振器，每个谐振器包括压电材料薄膜和至少第一电极和/或第二电极，所述体波在垂直方向上传播 到压电材料薄膜的平面，其特征在于：它还包括在所述谐振器之间的至少第一声子晶体结构，使得横向声波的透射系数可以在平行于压电体的平面的方向上减小 电影; 并且第一声子晶体结构形成在电介质材料的基体中或由介电材料制成的图案。

公开(公告)号：US08692630B2

公开(公告)日：2014-04-08

申请号：US12827875

申请日：2010-06-30

Applicant: Alexandre Reinhardt ,  Issiaka Kone

Inventor： Alexandre Reinhardt ,  Issiaka Kone

IPC: H03H9/70 ,  H03H9/54

CPC classification number: H03H3/04 ,  H03H9/02228 ,  H03H9/589

Abstract: A guided acoustic wave resonant device is provided. The device comprises at least two filters (F1, . . . , Fi, . . . , FN), each filter comprising at least two acoustic wave resonators (R11-R12, . . . , Ri1-Ri2, . . . , RN1-RN2), each filter having a useful frequency band (BF1, . . . , BFi, . . . , BFN) centered on a central frequency (f1, . . . , fi, . . . , fN), each resonator comprising at least one suite of inter-digitated upper electrodes exhibiting a periodic structure of period (Λij) and a layer of piezoelectric material, each resonator having a coupling coefficient (k21, k22, . . . , k2n) and a resonant frequency (fr1, . . . , fr2, . . . , fN), wherein at least one of the resonators comprises a differentiation layer (CDfi) making it possible in combination with the period of the inter-digitated electrodes to modify the coupling coefficient of the said resonator, the useful band and the central frequency being determined by the resonant frequencies and the coupling coefficients of the resonators which are adapted so as to have a determined useful bandwidth.

Abstract translation: 提供了一种引导声波谐振装置。 该装置包括至少两个滤波器（F1，...，Fi，...，FN），每个滤波器包括至少两个声波谐振器（R11-R12，...，Ri1-Ri2，...，RN1 -RN2），每个滤波器具有以中心频率（f1，...，fi，...，fN）为中心的有用频带（BF1，...，BFi，...，BFN），每个谐振器包括 具有周期（Λij）的周期性结构的至少一组数字化的上部电极和压电材料层，每个谐振器具有耦合系数（k21，k22，...，k2n）和谐振频率（fr1， 其中，所述谐振器中的至少一个包括微分层（CDfi），使得可以与所述数字化间电极的周期结合以修改所述谐振器的耦合系数 有用频带和中心频率由谐振频率和谐振器的耦合系数确定，这些谐振频率和谐振器的耦合系数被调整为具有 确定有用的带宽。

公开(公告)号：US20120206216A1

公开(公告)日：2012-08-16

申请号：US13500614

申请日：2010-10-04

Applicant: Chrystel Deguet ,  Laurent Clavelier ,  Emmanuel Defay ,  Alexandre Reinhardt

Inventor： Chrystel Deguet ,  Laurent Clavelier ,  Emmanuel Defay ,  Alexandre Reinhardt

IPC: H03H9/205 ,  H03H3/02

CPC classification number: H03H3/08 ,  H03H3/02 ,  H03H2003/0071 ,  Y10T29/42

Abstract: An acoustic wave device comprising at least one surface acoustic wave filter and one bulk acoustic wave filter, the device including, on a substrate comprising a second piezoelectric material: a stack of layers including a first metal layer and a layer of a first monocrystalline piezoelectric material, wherein the stack of layers is partially etched so as to define a first area in which the first and second piezoelectric materials are present and a second area in which the first piezoelectric material is absent; a second metallization at the first area for defining the bulk acoustic wave filter integrating the first piezoelectric material, and a third metallization at the second area for defining the surface acoustic wave filter integrating the second piezoelectric material.

Abstract translation: 一种声波装置，包括至少一个表面声波滤波器和一个体声波滤波器，该装置包括在包括第二压电材料的基板上，包括第一金属层和第一单晶压电材料层 其中，所述层的一部分被部分蚀刻以限定其中存在所述第一和第二压电材料的第一区域和不存在所述第一压电材料的第二区域; 在第一区域处的第二金属化，用于限定集成第一压电材料的体声滤波器，以及在第二区域处的第三金属化，用于限定整合第二压电材料的表面声波滤波器。

公开(公告)号：US20110248602A1

公开(公告)日：2011-10-13

申请号：US12975974

申请日：2010-12-22

Applicant: Emmanuel DEFAY ,  Sebastien Boisseau ,  Ghislain Despesse ,  Brice Ivira ,  Alexandre Reinhardt

Inventor： Emmanuel DEFAY ,  Sebastien Boisseau ,  Ghislain Despesse ,  Brice Ivira ,  Alexandre Reinhardt

IPC: H01L41/04 ,  H01L41/22

CPC classification number: H03H9/02015 ,  H03H3/04 ,  H03H9/02031 ,  H03H9/173 ,  H03H9/175 ,  H03H9/583 ,  H03H9/584 ,  H03H9/585 ,  H03H2003/0414 ,  H03H2009/02196 ,  Y10T29/42

Abstract: Acoustic resonator comprising an electret, and method of producing said resonator, application to switchable coupled resonator filters.The resonator comprises: at least one piezoelectric layer (30); electrodes (24, 26) on either side of this layer; and at least one electret layer (32) between the electrodes, to apply a permanent electric field to the piezoelectric layer. The intensity of this electric field is determined to shift the resonance frequency of the resonator by a desired value. The piezoelectric layer may contain electrical charges to itself constitute the electret layer.

Abstract translation: 包括驻极体的声谐振器及其制造方法，可应用于可切换耦合的谐振滤波器。 所述谐振器包括：至少一个压电层（30）; 该层两侧的电极（24,26）; 和在电极之间的至少一个驻极体层（32），以向压电层施加永久电场。 确定该电场的强度以将谐振器的谐振频率偏移所需的值。 压电层可以包含电荷本身构成驻极体层。