公开(公告)号：US07264536B2

公开(公告)日：2007-09-04

申请号：US10669544

申请日：2003-09-23

Applicant: Andreas Norbert Wiswesser ,  Ramiel Oshana ,  Kerry F. Hughes ,  Jay Rohde ,  David Datong Huo ,  Dominic J. Benvegnu

Inventor： Andreas Norbert Wiswesser ,  Ramiel Oshana ,  Kerry F. Hughes ,  Jay Rohde ,  David Datong Huo ,  Dominic J. Benvegnu

IPC: B24B49/12

CPC classification number: B24B37/205 ,  B24B37/013 ,  B24B49/12

Abstract: A polishing layer of a polishing has a window member with a top surface positioned a predetermined distance below the polishing surface. A transparent layer can be positioned below the polishing layer and supporting the window member.

Abstract translation: 研磨抛光层具有窗构件，其顶表面位于抛光表面下方预定的距离处。 透明层可以位于抛光层下方并支撑窗构件。

公开(公告)号：US07086929B2

公开(公告)日：2006-08-08

申请号：US10616488

申请日：2003-07-08

Applicant: Andreas Norbert Wiswesser ,  Walter Schoenleber

Inventor： Andreas Norbert Wiswesser ,  Walter Schoenleber

IPC: B24B49/12 ,  B24B7/22

CPC classification number: B24B49/12 ,  B24B37/013 ,  B24B49/04

Abstract: A chemical mechanical polishing apparatus includes two optical systems which are used serially to determine polishing endpoints. The first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. The second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.

Abstract translation: 化学机械抛光装置包括串联地用于确定抛光端点的两个光学系统。 第一光学系统包括产生撞击在基板的表面上的第一光束的第一光源和用于测量从基板的表面反射的光以产生测量的第一干涉信号的第一传感器。 第二光学系统包括第二光源以产生入射到衬底的表面上的第二光束和第二传感器，用于测量从衬底的表面反射的光以产生测量的第二干涉信号。 第二光束具有与第一光束不同的波长。

公开(公告)号：US07018271B2

公开(公告)日：2006-03-28

申请号：US10869719

申请日：2004-06-15

Applicant: Andreas Norbert Wiswesser ,  Walter Schoenleber ,  Boguslaw Swedek

Inventor： Andreas Norbert Wiswesser ,  Walter Schoenleber ,  Boguslaw Swedek

IPC: B24B49/00

CPC classification number: G01B11/06 ,  B24B37/04 ,  B24B49/12 ,  B24D7/12 ,  G01B9/02021 ,  G01B9/02027

Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.

Abstract translation: 在化学机械抛光期间原位测量基底上的层的厚度。 光束通过抛光垫中的窗口分割，并且抛光垫相对于基板的运动导致光束在穿过基板表面的路径中移动。 监测由反射离开衬底的光束产生的干涉信号，并且从干扰信号中提取多个强度测量值。 每个强度测量对应于穿过衬底表面的路径中的采样区域。 对于每个采样区域确定径向位置，并且根据径向位置将强度测量值分成多个径向范围。 从与该径向范围相关联的强度测量的每个径向范围计算层厚度。

公开(公告)号：US07008295B2

公开(公告)日：2006-03-07

申请号：US10358852

申请日：2003-02-04

Applicant: Andreas Norbert Wiswesser ,  Manoocher Birang ,  Boguslaw A. Swedek

Inventor： Andreas Norbert Wiswesser ,  Manoocher Birang ,  Boguslaw A. Swedek

IPC: B24B49/00

CPC classification number: B24B37/013 ,  B24B49/12

Abstract: Methods and apparatus for monitoring a substrate surface during chemical mechanical polishing are disclosed.

Abstract translation: 公开了用于在化学机械抛光期间监测基底表面的方法和装置。

公开(公告)号：US06986699B2

公开(公告)日：2006-01-17

申请号：US09851661

申请日：2001-05-08

Applicant: Andreas Norbert Wiswesser ,  Walter Schoenleber ,  Boguslaw Swedek ,  Manoocher Birang

Inventor： Andreas Norbert Wiswesser ,  Walter Schoenleber ,  Boguslaw Swedek ,  Manoocher Birang

IPC: B24B49/12

CPC classification number: B24B49/12 ,  B24B37/013 ,  B24B49/04

Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, and a polishing head to hold a substrate against the polishing pad during processing. The substrate includes a thin film structure disposed on a wafer. A first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. A second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.

Abstract translation: 化学机械抛光装置包括用于支撑抛光垫的压板和用于在加工期间将衬底保持在抛光垫上的抛光头。 衬底包括设置在晶片上的薄膜结构。 第一光学系统包括产生撞击在基板的表面上的第一光束的第一光源和用于测量从基板的表面反射的光以产生测量的第一干涉信号的第一传感器。 第二光学系统包括第二光源，用于产生入射到衬底的表面上的第二光束;以及第二传感器，用于测量从衬底的表面反射的光，以产生测量的第二干涉信号。 第二光束具有与第一光束不同的波长。

公开(公告)号：US06607422B1

公开(公告)日：2003-08-19

申请号：US09669776

申请日：2000-09-25

Applicant: Boguslaw Swedek ,  Andreas Norbert Wiswesser

Inventor： Boguslaw Swedek ,  Andreas Norbert Wiswesser

IPC: B24B4912

CPC classification number: B24B49/12 ,  B24B37/013 ,  B24B49/04

Abstract: A chemical mechanical polishing apparatus includes two optical systems which are used serially to determine polishing endpoints. The first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. The second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.

Abstract translation: 化学机械抛光装置包括串联地用于确定抛光端点的两个光学系统。 第一光学系统包括产生撞击在基板的表面上的第一光束的第一光源和用于测量从基板的表面反射的光以产生测量的第一干涉信号的第一传感器。 第二光学系统包括第二光源以产生入射到衬底的表面上的第二光束和第二传感器，用于测量从衬底的表面反射的光以产生测量的第二干涉信号。 第二光束具有与第一光束不同的波长。

公开(公告)号：US06494766B1

公开(公告)日：2002-12-17

申请号：US09695601

申请日：2000-10-23

Applicant: Andreas Norbert Wiswesser ,  Wallter Waiter Schoenleber ,  Boguslaw Swedek

Inventor： Andreas Norbert Wiswesser ,  Wallter Waiter Schoenleber ,  Boguslaw Swedek

IPC: B24B4900

CPC classification number: G01B11/06 ,  B24B37/04 ,  B24B49/12 ,  B24D7/12 ,  G01B9/02021 ,  G01B9/02027

Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.

Abstract translation: 在化学机械抛光期间原位测量基底上的层的厚度。 光束通过抛光垫中的窗口分割，并且抛光垫相对于基板的运动导致光束在穿过基板表面的路径中移动。 监测由反射离开衬底的光束产生的干涉信号，并且从干扰信号中提取多个强度测量值。 每个强度测量对应于穿过衬底表面的路径中的采样区域。 对于每个采样区域确定径向位置，并且根据径向位置将强度测量值分成多个径向范围。 从与该径向范围相关联的强度测量的每个径向范围计算层厚度。

公开(公告)号：US06247998B1

公开(公告)日：2001-06-19

申请号：US09237472

申请日：1999-01-25

Applicant: Andreas Norbert Wiswesser ,  Walter Schoenleber ,  Boguslaw Swedek ,  Manoocher Birang

Inventor： Andreas Norbert Wiswesser ,  Walter Schoenleber ,  Boguslaw Swedek ,  Manoocher Birang

IPC: B24B4900

CPC classification number: B24B49/12 ,  B24B37/013 ,  B24B49/04

Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, and a polishing head to hold a substrate against the polishing pad during processing. The substrate includes a thin film structure disposed on a wafer. A first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. A second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.

Abstract translation: 化学机械抛光装置包括用于支撑抛光垫的压板和用于在加工期间将衬底保持在抛光垫上的抛光头。 衬底包括设置在晶片上的薄膜结构。 第一光学系统包括产生撞击在基板的表面上的第一光束的第一光源和用于测量从基板的表面反射的光以产生测量的第一干涉信号的第一传感器。 第二光学系统包括第二光源，用于产生入射到衬底的表面上的第二光束;以及第二传感器，用于测量从衬底的表面反射的光，以产生测量的第二干涉信号。 第二光束具有与第一光束不同的波长。

公开(公告)号：US06190234B1

公开(公告)日：2001-02-20

申请号：US09300183

申请日：1999-04-27

Applicant: Boguslaw Swedek ,  Andreas Norbert Wiswesser

Inventor： Boguslaw Swedek ,  Andreas Norbert Wiswesser

IPC: B24B722

CPC classification number: B24B49/12 ,  B24B37/013 ,  B24B49/04

Abstract: A chemical mechanical polishing apparatus includes two optical systems which are used serially to determine polishing endpoints. The first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. The second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.

Abstract translation: 化学机械抛光装置包括串联地用于确定抛光端点的两个光学系统。 第一光学系统包括产生撞击在基板的表面上的第一光束的第一光源和用于测量从基板的表面反射的光以产生测量的第一干涉信号的第一传感器。 第二光学系统包括第二光源以产生入射到衬底的表面上的第二光束和第二传感器，用于测量从衬底的表面反射的光以产生测量的第二干涉信号。 第二光束具有与第一光束不同的波长。

公开(公告)号：US07198544B2

公开(公告)日：2007-04-03

申请号：US11190274

申请日：2005-07-26

Applicant: Andreas Norbert Wiswesser

Inventor： Andreas Norbert Wiswesser

IPC: B24B49/00

CPC classification number: B24B37/205

Abstract: Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed.

Abstract translation: 公开了具有窗的抛光垫，包含这种抛光垫的系统，以及使用这种抛光垫的工艺。