Micro-electromechanical structure with self-compensation of the thermal drifts caused by thermomechanical stress
    12.
    发明授权
    Micro-electromechanical structure with self-compensation of the thermal drifts caused by thermomechanical stress 有权
    微机电结构具有由热机械应力引起的热漂移的自补偿

    公开(公告)号:US07520171B2

    公开(公告)日:2009-04-21

    申请号:US11226930

    申请日:2005-09-14

    CPC classification number: G01P15/125 G01P2015/082

    Abstract: In a micro-electromechanical structure of semiconductor material, a detection structure is formed by a stator and by a rotor, which are mobile with respect to one another in presence of an external stress and are subject to thermal stress; a compensation structure of a micro-electromechanical type, subject to thermal stress and invariant with respect to the external stress, is connected to the detection structure thereby the micro-electromechanical structure supplies an output signal correlated to the external stress and compensated in temperature.

    Abstract translation: 在半导体材料的微机电结构中,通过定子和转子形成检测结构,转子在外部应力的存在下可相对移动,并受到热应力; 受到热应力和相对于外部应力不变的微机电类型的补偿结构连接到检测结构,由此微机电结构提供与外部应力相关​​并且被补偿的输出信号。

    Temperature-compensated micro-electromechanical device, and method of temperature compensation in a micro-electromechanical device
    14.
    发明授权
    Temperature-compensated micro-electromechanical device, and method of temperature compensation in a micro-electromechanical device 有权
    温度补偿微机电装置,以及微机电装置中的温度补偿方法

    公开(公告)号:US08733170B2

    公开(公告)日:2014-05-27

    申请号:US12683888

    申请日:2010-01-07

    Abstract: A micro-electromechanical device includes a semiconductor substrate, in which a first microstructure and a second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the substrate so as to undergo equal strains as a result of thermal expansions of the substrate. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the substrate, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the substrate. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by changes in thermal expansion or contraction can be compensated for.

    Abstract translation: 微机电装置包括半导体衬底,其中第一微结构和第二参考微结构被集成。 第一微结构和第二微结构被布置在基板中,以便由于基板的热膨胀而产生相等的应变。 此外,第一微结构相对于基板设置有可移动部件和固定部件,而第二微结构具有与第一微结构基本对称的形状,但是相对于基板固定。 通过从第一微结构的电特性减去第一微结构的电特性的变化,可以补偿由热膨胀或收缩的变化引起的第一微结构的电特性的变化。

    Process for the fabrication of an inertial sensor with failure threshold
    15.
    发明授权
    Process for the fabrication of an inertial sensor with failure threshold 有权
    制造具有故障阈值的惯性传感器的过程

    公开(公告)号:US07678599B2

    公开(公告)日:2010-03-16

    申请号:US11566590

    申请日:2006-12-04

    Abstract: A process for the fabrication of an inertial sensor with failure threshold includes the step of forming, on top of a substrate of a semiconductor wafer, a sample element embedded in a sacrificial region, the sample element configured to break under a preselected strain. The process further includes forming, on top of the sacrificial region, a body connected to the sample element and etching the sacrificial region so as to free the body and the sample element. The process may also include forming, on the substrate, additional sample elements connected to the body.

    Abstract translation: 用于制造具有故障阈值的惯性传感器的方法包括在半导体晶片的衬底的顶部上形成嵌入在牺牲区域中的样品元件的步骤,所述样品元件构造成在预选应变下断裂。 该方法还包括在牺牲区域的顶部上形成连接到样品元件的主体并蚀刻牺牲区域以释放身体和样品元件。 该方法还可以包括在基底上形成连接到身体的附加样品元件。

    Planar inertial sensor, in particular for portable devices having a stand-by function
    16.
    发明授权
    Planar inertial sensor, in particular for portable devices having a stand-by function 有权
    平面惯性传感器,特别是具有待机功能的便携式设备

    公开(公告)号:US07252002B2

    公开(公告)日:2007-08-07

    申请号:US10948095

    申请日:2004-09-23

    CPC classification number: G01P15/0891 G01P15/125 G01P2015/0857 H04M2250/12

    Abstract: A planar inertial sensor includes a first region and a second region of semiconductor material. The second region is capacitively coupled, and mobile with respect to the first region. The second region extends in a plane and has second portions, which face respective first portions of the first region. Movement of the second region, relative to the first region, in any direction belonging to the plane modifies the distance between the second portions and the first portions, which in turn modifies a value of the capacitive coupling.

    Abstract translation: 平面惯性传感器包括第一区域和第二半导体材料区域。 第二区域电容耦合,并相对于第一区域移动。 第二区域在平面中延伸并且具有面对第一区域的相应第一部分的第二部分。 第二区域相对于第一区域在属于该平面的任何方向上的运动修改了第二部分和第一部分之间的距离,从而改变了电容耦合的值。

    Temperature-compensated micro-electromechanical device, and method of temperature compensation in a micro-electromechanical device
    17.
    发明授权
    Temperature-compensated micro-electromechanical device, and method of temperature compensation in a micro-electromechanical device 有权
    温度补偿微机电装置,以及微机电装置中的温度补偿方法

    公开(公告)号:US07646582B2

    公开(公告)日:2010-01-12

    申请号:US11244439

    申请日:2005-10-05

    Abstract: A micro-electromechanical device includes a semiconductor body, in which at least one first microstructure and one second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the body so as to undergo equal strains as a result of thermal expansions of the body. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the body, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the body. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by thermal expansion can be compensated for.

    Abstract translation: 微机电装置包括半导体本体,其中集成了至少一个第一微结构和一个第二微结构。 第一微结构和第二微结构被布置在体内,以便由于身体的热膨胀而产生相等的应变。 此外,第一微结构相对于本体设置有可移动部件和固定部件,而第二微结构具有与第一微结构基本对称的形状,但相对于主体固定。 通过从第一微结构的电特性减去第一微结构的电特性的变化,可以补偿由热膨胀引起的第一微结构的电特性的变化。

    Microelectromechanical sensor having multiple full-scale and sensitivity values
    18.
    发明申请
    Microelectromechanical sensor having multiple full-scale and sensitivity values 有权
    具有多个满量程和灵敏度值的微机电传感器

    公开(公告)号:US20080098815A1

    公开(公告)日:2008-05-01

    申请号:US11978056

    申请日:2007-10-26

    Abstract: A microelectromechanical sensing structure is provided with a mobile element adapted to be displaced as a function of a quantity to be detected, and first fixed elements, capacitively coupled to the mobile element and configured to implement with the mobile element first detection conditions. The sensing structure is further provided with second fixed elements, capacitively coupled to the mobile element and configured to implement with the mobile element second detection conditions, which are different from the first detection conditions. In particular, the first and second detection conditions differ with respect to a full-scale or a sensitivity value in the detection of the aforesaid quantity.

    Abstract translation: 微机电感测结构设置有适于根据要检测的量移位的移动元件以及电容耦合到移动元件并被配置为利用移动元件实现第一检测条件的第一固定元件。 感测结构还设置有电容耦合到移动元件的第二固定元件,并被配置为与第一检测条件不同的移动元件第二检测条件实现。 特别地,第一和第二检测条件相对于检测上述量的满量程或灵敏度值而不同。

    Temperature-compensated micro-electromechanical device, and method of temperature compensation in a micro-electromechanical device
    19.
    发明申请
    Temperature-compensated micro-electromechanical device, and method of temperature compensation in a micro-electromechanical device 有权
    温度补偿微机电装置,以及微机电装置中的温度补偿方法

    公开(公告)号:US20060086995A1

    公开(公告)日:2006-04-27

    申请号:US11244439

    申请日:2005-10-05

    Abstract: A micro-electromechanical device includes a semiconductor body, in which at least one first microstructure and one second microstructure of reference are integrated. The first microstructure and the second microstructure are arranged in the body so as to undergo equal strains as a result of thermal expansions of the body. Furthermore, the first microstructure is provided with movable parts and fixed parts with respect to the body, while the second microstructure has a shape that is substantially symmetrical to the first microstructure but is fixed with respect to the body. By subtracting the changes in electrical characteristics of the second microstructure from those of the first, variations in electrical characteristics of the first microstructure caused by thermal expansion can be compensated for.

    Abstract translation: 微机电装置包括半导体本体,其中集成了至少一个第一微结构和一个第二参考微结构。 第一微结构和第二微结构布置在体内,以便由于身体的热膨胀而产生相等的应变。 此外,第一微结构相对于本体设置有可移动部件和固定部件,而第二微结构具有与第一微结构基本对称的形状,但相对于主体固定。 通过从第一微结构的电特性减去第一微结构的电特性的变化,可以补偿由热膨胀引起的第一微结构的电特性的变化。

    Micro-electromechanical structure with improved insensitivity to thermomechanical stresses induced by the package
    20.
    发明申请
    Micro-electromechanical structure with improved insensitivity to thermomechanical stresses induced by the package 有权
    微机电结构改善了对包装引起的热机械应力的不敏感性

    公开(公告)号:US20060032310A1

    公开(公告)日:2006-02-16

    申请号:US11201268

    申请日:2005-08-10

    Abstract: In a micro-electromechanical structure, a rotor has a centroidal axis and includes a suspended structure which carries mobile electrodes. A stator carries fixed electrodes facing the mobile electrodes. The suspended structure is connected to a rotor-anchoring region via elastic elements. The stator includes at least one stator element, which carries a plurality of fixed electrodes and is fixed to a stator-anchoring region. One of the rotor-anchoring regions and stator-anchoring regions extends along the centroidal axis and at least another of the rotor-anchoring regions and stator-anchoring regions extends in the proximity of the centroidal axis.

    Abstract translation: 在微机电结构中,转子具有重心轴线,并且包括携带移动电极的悬挂结构。 定子承载面向移动电极的固定电极。 悬挂结构通过弹性元件连接到转子 - 锚定区域。 定子包括至少一个定子元件,该定子元件承载多个固定电极并固定到定子 - 锚定区域。 转子锚定区域和定子 - 锚定区域之一沿着重心轴线延伸,并且至少另一个转子 - 锚定区域和定子 - 锚定区域在重心轴线附近延伸。

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