公开(公告)号：US20070212573A1

公开(公告)日：2007-09-13

申请号：US11462400

申请日：2006-08-04

Applicant: Po-Cheng Kuo ,  Yen-Hsiang Fang ,  An-Cheng Sun ,  Tao-Hsuan Yang ,  Chun-Yuan Chou ,  Ching-Ray Chang

Inventor： Po-Cheng Kuo ,  Yen-Hsiang Fang ,  An-Cheng Sun ,  Tao-Hsuan Yang ,  Chun-Yuan Chou ,  Ching-Ray Chang

IPC: G11B5/66 ,  C23C14/00

CPC classification number: G11B5/7325 ,  C23C14/025 ,  C23C14/0652 ,  C23C14/165 ,  C23C14/185 ,  G11B5/653 ,  G11B5/851

Abstract: A novel heat assisted magnetic recording (HAMR) medium and the fabrication method therefor are provided. The exchange coupling effect occurring at the interface of FePt/CoTb double layers is adopted, and thus the resulting magnetic flux would be sufficient enough to be detected and readout under the room temperature. The provided HAMR medium exhibits a relatively high saturation magnetization and perpendicular coercivity, and thus possesses a great potential for the ultra-high density recording application.

Abstract translation: 提供了一种新型的热辅助磁记录（HAMR）介质及其制造方法。 采用在FePt / CoTb双层界面处发生的交换耦合效应，因此得到的磁通足够足以在室温下检测和读出。 所提供的HAMR介质具有相对高的饱和磁化强度和垂直矫顽力，因此对于超高密度记录应用具有很大的潜力。

公开(公告)号：US09709640B2

公开(公告)日：2017-07-18

申请号：US14840475

申请日：2015-08-31

Applicant: Ching-Ray Chang ,  Jen-Tzong Jeng ,  Jen-Hwa Hsu ,  Chih-Cheng Lu ,  Bor-Lin Lai ,  Van-Su Luong

Inventor： Ching-Ray Chang ,  Jen-Tzong Jeng ,  Jen-Hwa Hsu ,  Chih-Cheng Lu ,  Bor-Lin Lai ,  Van-Su Luong

IPC: G01R33/09 ,  G01R33/00 ,  G01D5/14

CPC classification number: G01R33/09 ,  G01D5/145 ,  G01R33/0011 ,  G01R33/0094

Abstract: A single bridge magnetic field sensor includes a fluxguide mounted to a surface of a substrate. A bridge unit includes first, second, third, and fourth magnetoresistive elements mounted around the fluxguide and mounted on the surface of the substrate. A switching circuit is electrically connected to two voltage inputs, two grounding terminals, two voltage output terminals, and the four magnetoresistive elements. The switching circuit can proceed with circuit switching according to a magnetic field in each axis direction to be measured, thereby changing electrical connection between the voltage inputs, the grounding terminals, the voltage output terminals, and the four magnetoresistive elements. A measuring unit is electrically connected to the two voltage output terminals and the four magnetoresistive elements. The magnetoresistances of the four magnetoresistive elements measured by the measuring unit and output voltages of the voltage output terminals can be used to obtain a magnetic field measurement result.

公开(公告)号：US20060280973A1

公开(公告)日：2006-12-14

申请号：US11334605

申请日：2006-01-19

Applicant: An-Cheng Sun ,  Po-Cheng Kuo ,  Jen-Hwa Hsu ,  Huei-Li Huang ,  Ching-Ray Chang

Inventor： An-Cheng Sun ,  Po-Cheng Kuo ,  Jen-Hwa Hsu ,  Huei-Li Huang ,  Ching-Ray Chang

IPC: G11B5/66 ,  C23C14/00

CPC classification number: C23C14/024 ,  C23C14/541 ,  G11B5/65 ,  G11B5/7325 ,  G11B5/851

Abstract: A magnetic recording medium having at least an adjustable magnetic property is provided. The provided magnetic recording medium includes a substrate and a layer sequence located thereon. The layer sequence includes a underlayer, a buffer layer and a recording layer made of a magnetic material. According to the present invention, the adjustable magnetic property of the magnetic recording medium is adjusted via the variation of the thickness of the underlayer.

Abstract translation: 提供具有至少可调节磁性的磁记录介质。 所提供的磁记录介质包括基板和位于其上的层序列。 层序列包括底层，缓冲层和由磁性材料制成的记录层。 根据本发明，通过底层厚度的变化来调节磁记录介质的可调磁特性。

公开(公告)号：US20050016836A1

公开(公告)日：2005-01-27

申请号：US10891763

申请日：2004-07-14

Applicant: Po-Cheng Kuo ,  Chun-Yuan Chou ,  Chao-Te Lee ,  Chu-Long Shen ,  Ching-Ray Chang

Inventor： Po-Cheng Kuo ,  Chun-Yuan Chou ,  Chao-Te Lee ,  Chu-Long Shen ,  Ching-Ray Chang

IPC: C23C14/18 ,  C23C14/32 ,  C23C30/00 ,  G11B5/851 ,  G11B11/105

CPC classification number: G11B5/851 ,  C23C14/185

Abstract: The present invention includes that using single layer amorphous CoTbAg thin films as heat assisted magnetic recording (HAMR) media, and the method for producing these CoTbAg amorphous thin films. Co69.48−XTb30.52AgX films with x=0˜25.68 at. % are fabricated by DC or RF magnetron sputtering and rotating substrate. Two kinds of targets can be used. One is the CoTbAg alloy target. The other one consists of Co, Tb and Ag three targets. The CoTbAg film is prepared by co-sputtering of Co, Tb and Ag targets. The film composition can be controlled by changing the sputtering power density of each target. CoTbAg films are deposited on glass substrate or nature-oxide silicon wafer at room temperature. These films have high saturation magnetization and high perpendicular coercivity. They have amorphous structure and can be applied to HAMR media.

Abstract translation: 本发明包括使用单层无定形CoTbAg薄膜作为热辅助磁记录（HAMR）介质，以及制造这些CoTbAg非晶薄膜的方法。 Co69.48-XTb30.52AgX膜，x = 0〜25.68 at。 ％由DC或RF磁控溅射和旋转衬底制造。 可以使用两种目标。 一种是CoTbAg合金靶。 另一个由Co，Tb和Ag三个目标组成。 CoTbAg膜是通过共溅射Co，Tb和Ag靶来制备的。 可以通过改变每个靶的溅射功率密度来控制膜组成。 CoTbAg膜在室温下沉积在玻璃衬底或自然氧化硅晶片上。 这些膜具有高饱和磁化强度和高垂直矫顽力。 它们具有非晶结构，可应用于HAMR介质。

公开(公告)号：US20170059668A1

公开(公告)日：2017-03-02

申请号：US14840475

申请日：2015-08-31

Applicant: CHING-RAY CHANG ,  JEN-TZONG JENG ,  JEN-HWA HSU ,  CHIH-CHENG LU ,  BOR-LIN LAI ,  VAN-SU LUONG

Inventor： CHING-RAY CHANG ,  JEN-TZONG JENG ,  JEN-HWA HSU ,  CHIH-CHENG LU ,  BOR-LIN LAI ,  VAN-SU LUONG

IPC: G01R33/09

CPC classification number: G01R33/09 ,  G01D5/145 ,  G01R33/0011 ,  G01R33/0094

Abstract: A single bridge magnetic field sensor includes a fluxguide mounted to a surface of a substrate. A bridge unit includes first, second, third, and fourth magnetoresistive elements mounted around the fluxguide and mounted on the surface of the substrate. A switching circuit is electrically connected to two voltage inputs, two grounding terminals, two voltage output terminals, and the four magnetoresistive elements. The switching circuit can proceed with circuit switching according to a magnetic field in each axis direction to be measured, thereby changing electrical connection between the voltage inputs, the grounding terminals, the voltage output terminals, and the four magnetoresistive elements. A measuring unit is electrically connected to the two voltage output terminals and the four magnetoresistive elements. The magnetoresistances of the four magnetoresistive elements measured by the measuring unit and output voltages of the voltage output terminals can be used to obtain a magnetic field measurement result.

Abstract translation: 单桥磁场传感器包括安装到基板表面的磁通指引。 桥接单元包括安装在磁通导向器周围并安装在基板表面上的第一，第二，第三和第四磁阻元件。 开关电路电连接到两个电压输入，两个接地端子，两个电压输出端子和四个磁阻元件。 开关电路可以根据要测量的每个轴线方向上的磁场进行电路切换，从而改变电压输入，接地端子，电压输出端子和四个磁阻元件之间的电连接。 测量单元电连接到两个电压输出端子和四个磁阻元件。 由测量单元测量的四个磁阻元件的磁阻和电压输出端的输出电压可用于获得磁场测量结果。

公开(公告)号：US07993766B2

公开(公告)日：2011-08-09

申请号：US12054591

申请日：2008-03-25

Applicant: An-Cheng Sun ,  Po-Cheng Kuo ,  Jen-Hwa Hsu ,  Huei-Li Huang ,  Ching-Ray Chang

Inventor： An-Cheng Sun ,  Po-Cheng Kuo ,  Jen-Hwa Hsu ,  Huei-Li Huang ,  Ching-Ray Chang

IPC: G11B5/66

CPC classification number: G11B5/7325 ,  C23C14/0688 ,  C23C14/34 ,  C23C14/3492 ,  G11B5/65 ,  G11B5/851

Abstract: A magnetic recording medium is provided in the present invention. The magnetic recording medium including a substrate; a base layer disposed on the substrate; an intermediate layer disposed on the base layer; and a recording layer disposed on the intermediate layer and including a magnetic matrix and a plurality of non-magnetic particles percolated in the magnetic matrix.

Abstract translation: 在本发明中提供了一种磁记录介质。 所述磁记录介质包括基板; 设置在基板上的基层; 设置在所述基底层上的中间层; 以及设置在所述中间层上并包括在所述磁性矩阵中经过的磁矩阵和多个非磁性颗粒的记录层。

公开(公告)号：US20100124673A1

公开(公告)日：2010-05-20

申请号：US12408070

申请日：2009-03-20

Applicant: Sheng-Chi Chen ,  Po-Cheng Kuo ,  Chi-Long Shen ,  Sung-po Chen ,  Ching-Ray Chang

Inventor： Sheng-Chi Chen ,  Po-Cheng Kuo ,  Chi-Long Shen ,  Sung-po Chen ,  Ching-Ray Chang

IPC: G11B5/65 ,  H01F1/00 ,  C23C14/34

CPC classification number: G11B5/84 ,  C23C14/165 ,  C23C14/185 ,  C23C14/5806 ,  G11B5/64 ,  G11B5/653 ,  G11B5/851 ,  H01F10/123 ,  H01F10/14 ,  H01F41/22

Abstract: A high density magnetic recording film by using a rapid thermal annealing process is provided. The high density magnetic recording film includes a substrate; and a ferromagnetic layer formed on the substrate; wherein the rapid thermal annealing process is performed for the ferromagnetic layer at a temperature range of 600 to 800° C. for 5 to 180 seconds with a heating ramp rate of 60 to 100° C./sec so as to obtain the high density magnetic recording film.

Abstract translation: 提供了使用快速热退火工艺的高密度磁记录膜。 高密度磁记录膜包括基片; 以及形成在所述基板上的铁磁层; 其中在600〜800℃的温度范围内对铁磁层进行快速热退火处理5〜180秒，加热斜率为60〜100℃/秒，以获得高密度磁性 录影片

公开(公告)号：US20090092858A1

公开(公告)日：2009-04-09

申请号：US12130087

申请日：2008-05-30

Applicant: Sheng-Chi Chen ,  Po-Cheng Kuo ,  Chi-Long Shen ,  Shang-Lin Hsu ,  Ching-Ray Chang

Inventor： Sheng-Chi Chen ,  Po-Cheng Kuo ,  Chi-Long Shen ,  Shang-Lin Hsu ,  Ching-Ray Chang

IPC: G11B5/62 ,  B05D3/00 ,  C23C14/35

CPC classification number: G11B5/7325 ,  C23C14/352 ,  G11B5/65 ,  G11B5/656 ,  G11B5/8404 ,  G11B5/851

Abstract: The perpendicular magnetic recording medium of the present invention includes a substrate, a non-magnetic layer, a ferromagnetic layer and an antiferromagnetic oxide. The non-magnetic layer is formed on the substrate and the ferromagnetic layer is formed on the non-magnetic layer. The antiferromagnetic oxide is formed in the ferromagnetic layer after the perpendicular magnetic recording medium is annealed by an annealing process. An exchange coupling interaction between the antiferromagnetic oxide and the ferromagnetic materials is introduced.

Abstract translation: 本发明的垂直磁记录介质包括基板，非磁性层，铁磁层和反铁磁性氧化物。 非磁性层形成在基板上，铁磁层形成在非磁性层上。 在垂直磁记录介质通过退火处理退火之后，在铁磁层中形成反铁磁性氧化物。 介绍了反铁磁氧化物和铁磁材料之间的交换耦合相互作用。

公开(公告)号：US20060021871A1

公开(公告)日：2006-02-02

申请号：US10901789

申请日：2004-07-29

Applicant: Po-Cheng Kuo ,  Huei-Li Huang ,  Jen-Hwa Hsu ,  Ching-Ray Chang ,  An-Cheng Sun ,  Sheng-Chi Chen ,  Chun-Yuan Chou ,  Chang-Tai Lee ,  Huang-Wei Chang

Inventor： Po-Cheng Kuo ,  Huei-Li Huang ,  Jen-Hwa Hsu ,  Ching-Ray Chang ,  An-Cheng Sun ,  Sheng-Chi Chen ,  Chun-Yuan Chou ,  Chang-Tai Lee ,  Huang-Wei Chang

IPC: C23C14/00 ,  C23C14/32

CPC classification number: C23C14/165 ,  C23C14/02 ,  C23C14/185 ,  C23C14/5806 ,  G11B5/84 ,  H01F10/123 ,  H01F41/18 ,  H01F41/22

Abstract: A method for fabricating an L10 alloy film is provided. The method includes steps of (a) providing a substrate; (b) heating the substrate as a preheated substrate at a first temperature ranged from 100° C. to 600° C. for a time period ranged from 5 minutes to 120 minutes, and then cooling the substrate to room temperature in the sputtering chamber; (c) depositing an alloy film on the preheated substrate; and (d) annealing the alloy film at a second temperature ranged from 200° C. to 500° C. to form the alloy film.

Abstract translation: 提供了一种制造L1＆lt; 0＆gt;合金膜的方法。 该方法包括以下步骤：（a）提供衬底; （b）在100℃〜600℃的第一温度下将衬底加热为预热的衬底，时间为5分钟至120分钟，然后在溅射室中将衬底冷却至室温; （c）在预热的基底上沉积合金膜; 和（d）在200℃至500℃的第二温度下对合金膜退火以形成合金膜。

公开(公告)号：US09625537B2

公开(公告)日：2017-04-18

申请号：US14556101

申请日：2014-11-29

Applicant: Jui-Hang Chang ,  Ching-Ray Chang

Inventor： Jui-Hang Chang ,  Ching-Ray Chang

IPC: G01R33/09

CPC classification number: G01R33/098

Abstract: The present invention discloses a magnetic field sensing device and method. The magnetic field sensing device includes a pinned layer with a first magnetization direction, an analyzer with a second magnetization direction, wherein the first and the second magnetization directions form an angle, and a sensing layer of magnetic material, located between the analyzer and the pinned layer. The magnetic field sensing method includes: providing a pinned layer with a first magnetization direction, providing an analyzer with a second magnetization direction, wherein the first and the second magnetization directions form an angle, and providing a sensing layer of magnetic material, located between the analyzer and the pinned layer.