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    Magnetic field sensing device and method
    1.
    发明授权
    Magnetic field sensing device and method 有权

    公开(公告)号：US09625537B2

    公开(公告)日：2017-04-18

    申请号：US14556101

    申请日：2014-11-29

    Applicant: Jui-Hang Chang ,  Ching-Ray Chang

    Inventor： Jui-Hang Chang ,  Ching-Ray Chang

    IPC: G01R33/09

    CPC classification number: G01R33/098

    Abstract: The present invention discloses a magnetic field sensing device and method. The magnetic field sensing device includes a pinned layer with a first magnetization direction, an analyzer with a second magnetization direction, wherein the first and the second magnetization directions form an angle, and a sensing layer of magnetic material, located between the analyzer and the pinned layer. The magnetic field sensing method includes: providing a pinned layer with a first magnetization direction, providing an analyzer with a second magnetization direction, wherein the first and the second magnetization directions form an angle, and providing a sensing layer of magnetic material, located between the analyzer and the pinned layer.

    MAGNETIC FIELD SENSING DEVICE AND METHOD
    2.
    发明申请
    MAGNETIC FIELD SENSING DEVICE AND METHOD 审中-公开
    磁场感测装置及方法

    公开(公告)号：US20150153426A1

    公开(公告)日：2015-06-04

    申请号：US14556101

    申请日：2014-11-29

    Applicant: Jui-Hang Chang ,  Ching-Ray Chang

    Inventor： Jui-Hang Chang ,  Ching-Ray Chang

    IPC: G01R33/09

    CPC classification number: G01R33/098

    Abstract: The present invention discloses a magnetic field sensing device and method. The magnetic field sensing device includes a pinned layer with a first magnetization direction, an analyzer with a second magnetization direction, wherein the first and the second magnetization directions form an angle, and a sensing layer of magnetic material, located between the analyzer and the pinned layer. The magnetic field sensing method includes: providing a pinned layer with a first magnetization direction, providing an analyzer with a second magnetization direction, wherein the first and the second magnetization directions form an angle, and providing a sensing layer of magnetic material, located between the analyzer and the pinned layer.

    Abstract translation: 本发明公开了一种磁场感测装置及方法。 磁场感测装置包括具有第一磁化方向的钉扎层，具有第二磁化方向的分析器，其中第一和第二磁化方向形成一个角度，以及磁性材料的感测层，位于分析器和固定 层。 磁场感测方法包括：提供具有第一磁化方向的钉扎层，为分析器提供第二磁化方向，其中第一和第二磁化方向形成一个角度，并且提供磁性材料的感测层，位于 分析仪和固定层。

    DISCONTINUOUS ISLANDED FERROMAGNETIC RECORDING FILM WITH PERPENDICULAR MAGNETIC ANISOTROPY
    4.
    发明申请
    DISCONTINUOUS ISLANDED FERROMAGNETIC RECORDING FILM WITH PERPENDICULAR MAGNETIC ANISOTROPY 审中-公开
    不连续的非均匀磁共振记录膜

    公开(公告)号：US20110171494A1

    公开(公告)日：2011-07-14

    申请号：US12753904

    申请日：2010-04-05

    Applicant: GER-PIN LIN ,  Po-Cheng Kuo ,  Sheng-Chi Chen ,  Chih-Lung Shen ,  Kai-Tze Huang ,  Ching-Ray Chang

    Inventor： GER-PIN LIN ,  Po-Cheng Kuo ,  Sheng-Chi Chen ,  Chih-Lung Shen ,  Kai-Tze Huang ,  Ching-Ray Chang

    IPC: G11B5/70 ,  G11B5/855 ,  G11B5/66 ,  G11B5/714 ,  G11B5/706

    CPC classification number: G11B5/64 ,  G11B5/653 ,  G11B5/84 ,  G11B5/851

    Abstract: The present invention discloses a discontinuous islanded ferromagnetic recording film with perpendicular magnetic anisotropy. The discontinuous islanded ferromagnetic recording film includes a substrate and a ferromagnetic layer. The ferromagnetic layer is formed on the substrate and annealed by a high-temperature vacuum annealing process. After annealing, a surface energy difference existed between the ferromagnetic layer and the substrate turns the ferromagnetic layer into well-separated and discontinuous islanded ferromagnetic particles. Each islanded ferromagnetic particle is thought of a single magnetic domain, which is beneficial to achieve a discontinuous islanded ferromagnetic recording film with perpendicular magnetic anisotropy.

    Abstract translation: 本发明公开了具有垂直磁各向异性的不连续岛状铁磁记录膜。 不连续的岛状铁磁记录膜包括基板和铁磁层。 铁基层形成在基板上，并通过高温真空退火工艺退火。 在退火之后，铁磁层之间存在表面能量差，并且基板将铁磁层转变为分离好的和不连续的岛状铁磁性颗粒。 每个岛状铁磁颗粒被认为是单个磁畴，这有利于实现具有垂直磁各向异性的不连续岛状铁磁记录膜。

    METHOD FOR FORMING AN ORDERED ALLOY
    5.
    发明申请
    METHOD FOR FORMING AN ORDERED ALLOY 审中-公开
    形成订购合金的方法

    公开(公告)号：US20110070373A1

    公开(公告)日：2011-03-24

    申请号：US12700953

    申请日：2010-02-05

    Applicant: Shien-Wen Wang ,  An-Cheng Sun ,  Jen-Hwa Hsu ,  Po-Cheng Kuo ,  Ching-Ray Chang

    Inventor： Shien-Wen Wang ,  An-Cheng Sun ,  Jen-Hwa Hsu ,  Po-Cheng Kuo ,  Ching-Ray Chang

    IPC: B05D3/02 ,  C23C14/34

    CPC classification number: C23C14/185 ,  C03C17/40 ,  C22C5/04 ,  C23C14/025 ,  C23C14/352

    Abstract: A method for forming an ordered alloy includes: (a) forming a layer of a first metal with a layer thickness of less than 0.3 nm over a substrate; (b) forming a layer of a second metal with a layer thickness of less than 0.3 nm on the layer of the first metal under an elevated temperature sufficient to cause interdiffusion of atoms of the first and second metals between the layer of the first metal and the layer of the second metal so as to form the ordered alloy; and (c) repeating steps (a) and (b) until a predetermined layer thickness of the ordered alloy is achieved.

    Abstract translation: 形成有序合金的方法包括：（a）在衬底上形成层厚度小于0.3nm的第一金属层; （b）在高温下在第一金属层上形成厚度小于0.3nm的第二金属层，足以使第一和第二金属的原子在第一金属和第 第二金属层以形成有序合金; 和（c）重复步骤（a）和（b），直到实现有序合金的预定层厚。

    Data storing device and storing method for the same
    6.
    发明申请
    Data storing device and storing method for the same 审中-公开
    数据存储装置及其存储方法

    公开(公告)号：US20090284669A1

    公开(公告)日：2009-11-19

    申请号：US12229778

    申请日：2008-08-26

    Applicant: An-Cheng Sun ,  Jen-Hwa Hsu ,  Ching-Ray Chang

    Inventor： An-Cheng Sun ,  Jen-Hwa Hsu ,  Ching-Ray Chang

    IPC: G11C11/00 ,  G11C11/02

    CPC classification number: G11C11/02 ,  G11C13/02

    Abstract: A memory cell is provided in the present invention. The memory cell includes a first electrode receiving a first voltage to form an electric field therearound; and a combination arranged on the first electrode, comprising a liquid crystal molecule coupled with a magnetic substance for forming a magnetic field therearound, wherein the magnetic field changing with the first electric field.

    Abstract translation: 在本发明中提供了一种存储单元。 存储单元包括接收第一电压以在其周围形成电场的第一电极; 以及布置在第一电极上的组合，包括与用于在其周围形成磁场的磁性物质耦合的液晶分子，其中所述磁场随着第一电场而变化。

    Single bridge magnetic field sensor
    7.
    发明授权
    Single bridge magnetic field sensor 有权

    公开(公告)号：US09709640B2

    公开(公告)日：2017-07-18

    申请号：US14840475

    申请日：2015-08-31

    Applicant: Ching-Ray Chang ,  Jen-Tzong Jeng ,  Jen-Hwa Hsu ,  Chih-Cheng Lu ,  Bor-Lin Lai ,  Van-Su Luong

    Inventor： Ching-Ray Chang ,  Jen-Tzong Jeng ,  Jen-Hwa Hsu ,  Chih-Cheng Lu ,  Bor-Lin Lai ,  Van-Su Luong

    IPC: G01R33/09 ,  G01R33/00 ,  G01D5/14

    CPC classification number: G01R33/09 ,  G01D5/145 ,  G01R33/0011 ,  G01R33/0094

    Abstract: A single bridge magnetic field sensor includes a fluxguide mounted to a surface of a substrate. A bridge unit includes first, second, third, and fourth magnetoresistive elements mounted around the fluxguide and mounted on the surface of the substrate. A switching circuit is electrically connected to two voltage inputs, two grounding terminals, two voltage output terminals, and the four magnetoresistive elements. The switching circuit can proceed with circuit switching according to a magnetic field in each axis direction to be measured, thereby changing electrical connection between the voltage inputs, the grounding terminals, the voltage output terminals, and the four magnetoresistive elements. A measuring unit is electrically connected to the two voltage output terminals and the four magnetoresistive elements. The magnetoresistances of the four magnetoresistive elements measured by the measuring unit and output voltages of the voltage output terminals can be used to obtain a magnetic field measurement result.

    Single layer CoTbAg thin films for heat assisted magnetic recording
    9.
    发明申请
    Single layer CoTbAg thin films for heat assisted magnetic recording 审中-公开
    单层CoTbAg薄膜，用于热辅助磁记录

    公开(公告)号：US20050016836A1

    公开(公告)日：2005-01-27

    申请号：US10891763

    申请日：2004-07-14

    Applicant: Po-Cheng Kuo ,  Chun-Yuan Chou ,  Chao-Te Lee ,  Chu-Long Shen ,  Ching-Ray Chang

    Inventor： Po-Cheng Kuo ,  Chun-Yuan Chou ,  Chao-Te Lee ,  Chu-Long Shen ,  Ching-Ray Chang

    IPC: C23C14/18 ,  C23C14/32 ,  C23C30/00 ,  G11B5/851 ,  G11B11/105

    CPC classification number: G11B5/851 ,  C23C14/185

    Abstract: The present invention includes that using single layer amorphous CoTbAg thin films as heat assisted magnetic recording (HAMR) media, and the method for producing these CoTbAg amorphous thin films. Co69.48−XTb30.52AgX films with x=0˜25.68 at. % are fabricated by DC or RF magnetron sputtering and rotating substrate. Two kinds of targets can be used. One is the CoTbAg alloy target. The other one consists of Co, Tb and Ag three targets. The CoTbAg film is prepared by co-sputtering of Co, Tb and Ag targets. The film composition can be controlled by changing the sputtering power density of each target. CoTbAg films are deposited on glass substrate or nature-oxide silicon wafer at room temperature. These films have high saturation magnetization and high perpendicular coercivity. They have amorphous structure and can be applied to HAMR media.

    Abstract translation: 本发明包括使用单层无定形CoTbAg薄膜作为热辅助磁记录（HAMR）介质，以及制造这些CoTbAg非晶薄膜的方法。 Co69.48-XTb30.52AgX膜，x = 0〜25.68 at。 ％由DC或RF磁控溅射和旋转衬底制造。 可以使用两种目标。 一种是CoTbAg合金靶。 另一个由Co，Tb和Ag三个目标组成。 CoTbAg膜是通过共溅射Co，Tb和Ag靶来制备的。 可以通过改变每个靶的溅射功率密度来控制膜组成。 CoTbAg膜在室温下沉积在玻璃衬底或自然氧化硅晶片上。 这些膜具有高饱和磁化强度和高垂直矫顽力。 它们具有非晶结构，可应用于HAMR介质。

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