公开(公告)号：US07923689B2

公开(公告)日：2011-04-12

申请号：US12433631

申请日：2009-04-30

Applicant: Deborah J. Kirby ,  Terence J. De Lyon ,  David T. Chang ,  Frederic P. Stratton ,  Daniel J. Gregoire ,  Jeffery J. Puschell

Inventor： Deborah J. Kirby ,  Terence J. De Lyon ,  David T. Chang ,  Frederic P. Stratton ,  Daniel J. Gregoire ,  Jeffery J. Puschell

IPC: G01J5/02

CPC classification number: H01L27/14625 ,  G02B5/208 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14649 ,  H01L27/14685 ,  H01L31/0232 ,  H01L31/0236

Abstract: In one embodiment, a multiband infrared (IR) detector array includes a metallic surface having a plurality of periodic resonant structures configured to resonantly transmit electromagnetic energy in distinct frequency bands. A plurality of pixels on the array each include at least first and second resonant structures corresponding to first and second wavelengths. For each pixel, the first and second resonant structures have an associated detector and are arranged such that essentially all of the electromagnetic energy at the first wavelength passes through the first resonant structure onto the first detector, and essentially all of the electromagnetic energy at the second wavelength passes through the second resonant structure onto the second detector. In one embodiment, the resonant structures are apertures or slots, and the IR detectors may be mercad telluride configured to absorb radiation in the 8-12 μm band. Detection of more than two wavelengths may be achieved by proper scaling. A method of forming an IR detector array is also disclosed.

Abstract translation: 在一个实施例中，多频带红外（IR）检测器阵列包括具有多个周期性谐振结构的金属表面，其被配置为在不同频带中共振地传输电磁能。 阵列上的多个像素包括至少对应于第一和第二波长的第一和第二谐振结构。 对于每个像素，第一和第二谐振结构具有相关联的检测器，并且被布置成使得第一波长的电磁能量基本上全部通过第一谐振结构到第一检测器上，并且基本上所有的第二电磁能量 波长通过第二谐振结构到第二检测器。 在一个实施例中，谐振结构是孔或狭缝，并且IR检测器可以是被配置为吸收8-12μm带中的辐射的巯基碲化物。 可以通过适当的缩放来实现超过两个波长的检测。 还公开了形成IR检测器阵列的方法。

公开(公告)号：US07830227B1

公开(公告)日：2010-11-09

申请号：US12233232

申请日：2008-09-18

Applicant: David T. Chang ,  Tsung-Yuan Hsu

Inventor： David T. Chang ,  Tsung-Yuan Hsu

IPC: H03H9/54 ,  H03H9/70 ,  H01P1/10

CPC classification number: H03H9/462 ,  H01H59/0009 ,  H03H9/465 ,  H03H2009/241

Abstract: A method for fabricating integrated MEMS switches and filters includes forming cavities in a silicon substrate, metalizing a first pattern on a quartz substrate to form first switch and filter elements, bonding the quartz substrate to the silicon substrate so that the first switch and filter elements are located within one of the cavities, thinning the quartz substrate, forming conductive vias in the quartz substrate, metalizing a second pattern on a second surface of the quartz substrate to form second switch and filter elements, etching the quartz substrate to separate MEMS switches from filters, forming protrusions on a host substrate, metalizing a third metal pattern on the host substrate to form metal anchors and third switch elements, compression bonding the metal anchors on the host substrate to second switch and filter elements, forming signal lines to integrate the MEMS switches and filters and removing the silicon substrate.

Abstract translation: 一种用于制造集成的MEMS开关和滤波器的方法包括在硅衬底中形成空腔，将石英衬底上的第一图案金属化以形成第一开关和滤波器元件，将石英衬底接合到硅衬底，使得第一开关和滤波器元件 位于一个空腔内，使石英衬底变薄，在石英衬底中形成导电通孔，在石英衬底的第二表面上金属化第二图案以形成第二开关和滤光元件，蚀刻石英衬底以将MEMS开关与过滤器分离 在主机基板上形成突起，在主机基板上形成金属化第三金属图案以形成金属锚和第三开关元件，将主机基板上的金属锚固件压接到第二开关和滤波元件，形成信号线以集成MEMS开关 并过滤并去除硅衬底。

公开(公告)号：US20100276598A1

公开(公告)日：2010-11-04

申请号：US12433576

申请日：2009-04-30

Applicant: Deborah J. Kirby ,  David T. Chang ,  Terence J. De Lyon ,  James H. Schaffner ,  Metin S. Mangir ,  Jeffery J. Puschell ,  Jar Jueh Lee ,  Michael Gritz

Inventor： Deborah J. Kirby ,  David T. Chang ,  Terence J. De Lyon ,  James H. Schaffner ,  Metin S. Mangir ,  Jeffery J. Puschell ,  Jar Jueh Lee ,  Michael Gritz

IPC: G01J5/02 ,  H01L31/18

CPC classification number: G01J5/08 ,  G01J5/0837 ,  H01L31/1032

Abstract: A conformal coherent wideband antenna coupled IR detector array included a plurality of unit cells each having a dimension that includes an antenna for focusing radiation onto an absorber element sized less than the dimension. In one embodiment, the absorber element may be formed of a mercury cadmium telluride alloy. According to a further embodiment, the antenna array may be fabricated using sub-wavelength fabrication processes.

Abstract translation: 保形相干宽带天线耦合红外探测器阵列包括多个单位单元，每个单元具有包括用于将辐射聚焦到尺寸小于该尺寸的吸收元件上的天线的尺寸。 在一个实施例中，吸收元件可以由汞镉碲合金形成。 根据另一实施例，天线阵列可以使用亚波长制造工艺制造。

公开(公告)号：US07802356B1

公开(公告)日：2010-09-28

申请号：US12034852

申请日：2008-02-21

Applicant: David T. Chang ,  Randall L. Kubena ,  Pamela R. Patterson

Inventor： David T. Chang ,  Randall L. Kubena ,  Pamela R. Patterson

IPC: H04R31/00

CPC classification number: H03H9/172 ,  H03H3/04

Abstract: A method for manufacturing a resonator is presented in the present application. The method includes providing a handle substrate, providing a host substrate, providing a quartz substrate comprising a first surface opposite a second surface, applying interposer film to the first surface of the quartz substrate, bonding the quartz substrate to the handle substrate wherein the interposer film is disposed between the quartz substrate and the handle substrate, thinning the second surface of the quartz substrate, removing a portion of the bonded quartz substrate to expose a portion of the interposer film, bonding the quartz substrate to the host substrate, and removing the handle substrate and the interposer film, thereby releasing the quartz substrate.

Abstract translation: 在本申请中提出了一种用于制造谐振器的方法。 该方法包括提供处理衬底，提供主体衬底，提供包括与第二表面相对的第一表面的石英衬底，将中介层膜施加到石英衬底的第一表面，将石英衬底接合到处理衬底，其中插入膜 设置在石英基板和手柄基板之间，使石英基板的第二表面变薄，去除一部分键合的石英基板以暴露中间层膜的一部分，将石英基板接合到主基板，并且移除手柄 基板和内插膜，从而释放石英基板。

公开(公告)号：US07671431B1

公开(公告)日：2010-03-02

申请号：US11330376

申请日：2006-01-10

Applicant: Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

Inventor： Randall L. Kubena ,  Frederic P. Stratton ,  David T. Chang

IPC: H01L23/00

CPC classification number: G01C19/5719 ,  H01L21/76898

Abstract: The present invention relates to a method of manufacturing a cloverleaf microgyroscope containing an integrated post comprising: attaching a post wafer to a resonator wafer, forming a bottom post from the post wafer being attached to the resonator wafer, preparing a base wafer with through-wafer interconnects, attaching the resonator wafer to the base wafer, wherein the bottom post fits into a post hole in the base wafer, forming a top post from the resonator wafer, wherein the bottom and top post are formed symmetrically around the same axis, and attaching a cap wafer on top of the base wafer.

Abstract translation: 本发明涉及一种制造含有一体式立柱的三叶草微陀螺的方法，其特征在于，包括：将后晶片连接到谐振晶片，从后晶片形成底柱，附着于谐振晶片，制备带晶圆的基晶片 互连，将谐振器晶片连接到基底晶片，其中底部支架装配到基底晶片中的柱孔中，从谐振器晶片形成顶部柱，其中底部和顶部柱围绕相同的轴线对称地形成，并且附接 在基底晶片顶部的盖子晶片。

公开(公告)号：US07653985B1

公开(公告)日：2010-02-02

申请号：US11823443

申请日：2007-06-27

Applicant: David T. Chang ,  James H. Schaffner ,  Tsung-Yuan Hsu ,  Adele E. Schmitz

Inventor： David T. Chang ,  James H. Schaffner ,  Tsung-Yuan Hsu ,  Adele E. Schmitz

IPC: H01H11/00 ,  H01H65/00

CPC classification number: H01H59/0009 ,  H01H2001/0068 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49155 ,  Y10T29/49204

Abstract: Disclosed are methods for fabricating a micro-electro-mechanical switch. The switch has a cantilever arm disposed on a substrate that can be moved in orthogonal directions for latching and unlatching. For latching, the cantilever arm is moved back by a comb-drive actuator and then pulled down by electrodes disposed on the substrate and the cantilever arm. The comb-drive actuator switch is then released and the cantilever arm moves forward to be captured by a dove-tail structure on the substrate. When the voltage is removed, the cantilever arm is held in place by the dove-tail structure. The switch is unlatched by actuating the comb-drive actuator to move the cantilever arm away from the dove-tail structure. The cantilever arm will then pop up once it is released from the dove-tail structure.

Abstract translation: 公开了用于制造微机电开关的方法。 开关具有设置在基板上的悬臂，该悬臂可以沿正交方向移动以锁定和解锁。 为了锁定，悬臂由梳驱动致动器向后移动，然后由设置在基板和悬臂上的电极拉下。 然后梳梳驱动致动器开关被释放，并且悬臂臂向前移动以通过基板上的鸽尾结构捕获。 当电压被去除时，悬臂由鸠尾结构保持在适当位置。 通过启动梳齿驱动执行机构将悬臂移动离开鸽尾结构，开关被解锁。 一旦从鸽尾结构中释放出来，悬臂就会弹出。

公开(公告)号：US08778800B1

公开(公告)日：2014-07-15

申请号：US13887370

申请日：2013-05-06

Applicant: David T. Chang ,  Pamela R. Patterson ,  Ping Liu

Inventor： David T. Chang ,  Pamela R. Patterson ,  Ping Liu

IPC: H01L21/44

CPC classification number: H01G11/10 ,  B82Y10/00 ,  B82Y40/00 ,  H01G11/28 ,  H01G11/36 ,  H01G11/46 ,  H01G11/82 ,  H01L28/91 ,  H01L29/0676 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/775 ,  Y02E60/13

Abstract: This invention provides a micro-supercapacitor with high energy density and high power density. In some variations, carbon nanostructures, such as carbon nanotubes, coated with a metal oxide, such as ruthenium oxide, are grown in a supercapacitor cavity that contains no separator. A lid is bonded to the cavity using a bonding process to form a hermetic seal. These micro-supercapacitors may be fabricated from silicon-on-insulator wafers according to the disclosed methods. An exemplary micro-supercapacitor is cubic with a length of about 50-100 μm. The absence of a separator translates to higher energy storage volume and less wasted space within the supercapacitor cell. The energy density of the micro-supercapacitor may exceed 150 J/cm3 and the peak output power density may be in the range of about 2-20 W/cm3, in various embodiments.

Abstract translation: 本发明提供了具有高能量密度和高功率密度的微型超级电容器。 在一些变型中，涂覆有金属氧化物（例如氧化钌）的碳纳米管结构，例如在不含隔板的超级电容器腔中生长。 使用接合工艺将盖结合到腔体以形成气密密封。 根据所公开的方法，这些微超级电容器可以由绝缘体上硅晶片制造。 示例性的微超级电容器是长度为约50-100μm的立方体。 没有分离器可以转换为更高的能量存储容量，并且在超级电容器单元内减少浪费的空间。 在各种实施例中，微超级电容器的能量密度可以超过150J / cm 3，峰值输出功率密度可以在约2-20W / cm 3的范围内。

公开(公告)号：US08558281B1

公开(公告)日：2013-10-15

申请号：US13310473

申请日：2011-12-02

Applicant: Dean C. Regan ,  Keisuke Shinohara ,  Andrea Corrion ,  Ivan Milosavljevic ,  Miroslav Micovic ,  Peter J. Willadsen ,  Colleen M. Butler ,  Hector L. Bracamontes ,  Bruce T. Holden ,  David T. Chang

Inventor： Dean C. Regan ,  Keisuke Shinohara ,  Andrea Corrion ,  Ivan Milosavljevic ,  Miroslav Micovic ,  Peter J. Willadsen ,  Colleen M. Butler ,  Hector L. Bracamontes ,  Bruce T. Holden ,  David T. Chang

IPC: H01L29/205

CPC classification number: H01L29/42316 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/66462

Abstract: A method for fabricating a gate structure for a field effect transistor having a buffer layer on a substrate, a channel layer and a barrier layer over the channel layer includes forming a gate including silicon, forming first sidewalls of a first material on either side and adjacent to the gate, selectively etching into the buffer layer to form a mesa for the field effect transistor, depositing a material layer over the mesa, planarizing the material layer over the mesa to form a planarized surface such that a top of the gate, tops of the first sidewalls, and a top of the material layer over the mesa are on the same planarized surface, depositing metal on the planzarized surface, annealing to form the gate into a metal silicided gate, and etching to remove excess non-silicided metal.

Abstract translation: 一种制造用于场效应晶体管的栅极结构的方法，该场效应晶体管在衬底上具有缓冲层，沟道层上的沟道层和势垒层包括形成包含硅的栅极，在任一侧和相邻的第一侧上形成第一材料的第一侧壁 到栅极，选择性地蚀刻到缓冲层中以形成用于场效应晶体管的台面，在所述台面上沉积材料层，在所述台面上平坦化所述材料层以形成平坦化表面，使得所述栅极的顶部， 第一侧壁和台面上的材料层的顶部在相同的平坦化表面上，在平面化表面上沉积金属，退火以将栅极形成金属硅化栅极，并蚀刻以除去多余的非硅化金属。

公开(公告)号：US08246846B1

公开(公告)日：2012-08-21

申请号：US12889687

申请日：2010-09-24

Applicant: David T. Chang ,  Tsung-Yuan Hsu

Inventor： David T. Chang ,  Tsung-Yuan Hsu

IPC: C23F3/00

CPC classification number: H03H9/462 ,  H01H59/0009 ,  H03H9/465 ,  H03H2009/241

Abstract: A method for fabricating integrated MEMS switches and filters includes forming cavities in a silicon substrate, metalizing a first pattern on a quartz substrate to form first switch and filter elements, bonding the quartz substrate to the silicon substrate so that the first switch and filter elements are located within one of the cavities, thinning the quartz substrate, forming conductive vias in the quartz substrate, metalizing a second pattern on a second surface of the quartz substrate to form second switch and filter elements, etching the quartz substrate to separate MEMS switches from filters, forming protrusions on a host substrate, metalizing a third metal pattern on the host substrate to form metal anchors and third switch elements, compression bonding the metal anchors on the host substrate to second switch and filter elements, forming signal lines to integrate the MEMS switches and filters and removing the silicon substrate.

Abstract translation: 一种用于制造集成的MEMS开关和滤波器的方法包括在硅衬底中形成空腔，将石英衬底上的第一图案金属化以形成第一开关和滤波器元件，将石英衬底接合到硅衬底，使得第一开关和滤波器元件 位于一个空腔内，使石英衬底变薄，在石英衬底中形成导电通孔，在石英衬底的第二表面上金属化第二图案以形成第二开关和滤光元件，蚀刻石英衬底以将MEMS开关与过滤器分离 在主机基板上形成突起，在主机基板上形成金属化第三金属图案以形成金属锚和第三开关元件，将主机基板上的金属锚固件压接到第二开关和滤波元件，形成信号线以集成MEMS开关 并过滤并去除硅衬底。

公开(公告)号：US07851971B2

公开(公告)日：2010-12-14

申请号：US12577420

申请日：2009-10-12

Applicant: David T. Chang ,  Randall L. Kubena ,  Frederic P. Stratton ,  Pamela R. Patterson

Inventor： David T. Chang ,  Randall L. Kubena ,  Frederic P. Stratton ,  Pamela R. Patterson

IPC: H01L41/08

CPC classification number: H04R31/00 ,  H04R19/005 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908

Abstract: A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.

Abstract translation: 一种用于制造低频石英谐振器的方法包括用金属蚀刻停止器将石英晶片的顶侧金属化，在金属蚀刻停止器上沉积第一金属层，图案化第一金属层以形成顶部电极，将石英 将晶片细化到硅手柄，将石英晶片细化到所需厚度，在石英晶片的底侧上沉积硬蚀刻掩模，蚀刻石英晶片以形成用于谐振器的石英区域，并通过石英形成通孔 晶片，去除硬蚀刻掩模而不去除金属蚀刻停止，在石英晶片的底侧上形成用于低频石英谐振器的底部电极，将用于衬底接合焊盘的金属沉积到主衬底晶片上，将石英谐振器 到基板接合焊盘，并且移除硅手柄。