公开(公告)号：US6048737A

公开(公告)日：2000-04-11

申请号：US707033

申请日：1996-09-03

Applicant: Il-sub Chung ,  In-kyung Yoo ,  Chi-won Chung ,  Seshu B. Desu

Inventor： Il-sub Chung ,  In-kyung Yoo ,  Chi-won Chung ,  Seshu B. Desu

IPC: C30B29/16 ,  H01G4/33 ,  H01G7/06 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8247 ,  H01L27/04 ,  H01L27/10 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792 ,  H01L21/00

CPC classification number: H01L28/56

Abstract: A ferroelectric capacitor taking a multilayer structure wherein a conductive oxide layer which is formed between a metal electrode and a ferroelectric layer, capable of enhancing the fatigue behavior in addition to reducing the leakage current. The multilayer structure can be fabricated by depositing a silicon oxide (SiO.sub.2) layer, an adhesive layer, a bottom metal layer, a lower conductive oxide layer, a ferroelectric layer, an upper conductive oxide layer and a top metal electrode layer are deposited over a silicon substrate, in sequence.

Abstract translation: 一种具有多层结构的铁电电容器，其中形成在金属电极和铁电体层之间的导电氧化物层除了减少漏电流之外还能够增强疲劳特性。 可以通过沉积氧化硅（SiO 2）层，粘合剂层，底部金属层，下部导电氧化物层，铁电体层，上部导电氧化物层和顶部金属电极层来制造多层结构 硅衬底。

公开(公告)号：US20070202673A1

公开(公告)日：2007-08-30

申请号：US11059784

申请日：2005-02-17

Applicant: Dong-Wook Kim ,  Sungho Jin ,  In-Kyung Yoo

Inventor： Dong-Wook Kim ,  Sungho Jin ,  In-Kyung Yoo

IPC: H01L21/28 ,  H01L21/44

CPC classification number: H01J31/127 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/0431 ,  H01J2329/0455 ,  Y10S977/742

Abstract: This invention discloses novel field emitters which exhibit improved emission characteristics combined with improved emitter stability, in particular, new types of carbide or nitride based electron field emitters with desirable nanoscale, aligned and sharped-tip emitter structures.

Abstract translation: 本发明公开了具有改进的发射特性与改进的发射极稳定性相结合的新型场致发射体，特别是新型的具有理想的纳米尺度，排列和锐尖发射极结构的碳化物或氮化物基电子场发射体。

公开(公告)号：US5625529A

公开(公告)日：1997-04-29

申请号：US412043

申请日：1995-03-28

Applicant: Wan-in Lee ,  Jun-ki Lee ,  Il-sub Chung ,  Chi-won Chung ,  In-kyung Yoo

Inventor： Wan-in Lee ,  Jun-ki Lee ,  Il-sub Chung ,  Chi-won Chung ,  In-kyung Yoo

IPC: C04B35/46 ,  H01B3/00 ,  H01B3/12 ,  H01G4/12 ,  H01G7/06 ,  H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01G4/06

CPC classification number: H01L21/02197 ,  H01L21/02282 ,  H01L21/31691 ,  H01L28/55 ,  Y10T29/435

Abstract: PZT ferroelectric thin films for capacitors comprise a combination of a donor dopant and an acceptor dopant in a total amount of about 0.1 to 8 mole percent of PZT, or Sc alone in an amount of about 0.1 to 5 mole percent. Nb or Ta is employed as a donor dopant, while Sc, Mg or Zn can be used as an acceptor dopant. The presence of a single Sc acceptor dopant, or both an acceptor dopant and a donor dopant, results in increased endurance. Fatigue cycles are increased on the order of about 10.sup.5 relative to dopant-free films. Doping with a single Sc acceptor dopant, or both an acceptor dopant and a donor dopant, reduces coercive field, allowing PZT films to switch at relatively low voltages. PZT thin films of a pure perovskite phase are obtained in which a pyrochlore phase is completely excluded. Pt may be used as an electrode material. The leakage current of PZT films doped with both the acceptor and donor elements are similar to the leakage current level of pure PZT thin films.

Abstract translation: 用于电容器的PZT铁电薄膜包括总量为约0.1至8摩尔％的PZT或Sc单独的施主掺杂剂和受主掺杂剂的组合，其量为约0.1至5摩尔％。 Nb或Ta用作施主掺杂剂，而Sc，Mg或Zn可用作受主掺杂剂。 单个Sc受体掺杂剂或受体掺杂剂和施主掺杂剂两者的存在导致耐久性增加。 相对于不含掺杂剂的膜，疲劳循环增加约为约105。 用单个Sc受体掺杂剂或受体掺杂剂和施主掺杂剂掺杂减少矫顽场，允许PZT膜在相对低的电压下切换。 获得纯钙钛矿相的PZT薄膜，其中完全排除了烧绿石相。 Pt可以用作电极材料。 掺杂受体和施主元素的PZT膜的漏电流类似于纯PZT薄膜的漏电流水平。

公开(公告)号：US07576341B2

公开(公告)日：2009-08-18

申请号：US11296233

申请日：2005-12-08

Applicant: Dong-Wook Kim ,  Sungho Jin ,  In Kyung Yoo

Inventor： Dong-Wook Kim ,  Sungho Jin ,  In Kyung Yoo

IPC: G21K5/04

CPC classification number: H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J2237/31752 ,  H01J2237/31788

Abstract: A lithography system and method for operating the same. The lithography system may include a cathode adapted to emit an electron beam, a beam-homogenizing structure, capable of increasing at least one of the uniformity and energetic of the electron beam, and a mask adapted to accelerate the electron beam to form a pattern on a wafer.

Abstract translation: 光刻系统及其操作方法。 光刻系统可以包括适于发射电子束的阴极，能够增加电子束的均匀性和能量中的至少一种的光束均化结构，以及适于加速电子束以形成图案的掩模 晶圆。