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    Molded semiconductor package having an embedded inlay
    12.
    发明授权
    Molded semiconductor package having an embedded inlay 有权

    公开(公告)号：US12283538B2

    公开(公告)日：2025-04-22

    申请号：US17740413

    申请日：2022-05-10

    Applicant: Infineon Technologies AG

    Inventor： Marcus Boehm ,  Michael Fuegl ,  Ludwig Heitzer ,  Stefan Woetzel

    IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31

    Abstract: A molded semiconductor package includes: a mold compound; a metal substrate partly embedded in the mold compound; at least one first metal lead partly embedded in the mold compound; an inlay embedded in the mold compound, the inlay comprising a semiconductor die embedded in an electrically insulating body, a first metal structure attached to a first side of the semiconductor die, and a second metal structure attached to a second side of the semiconductor die; and a metal clip at least partly embedded in the mold compound and connecting the second metal structure to the at least one first metal lead. The semiconductor die has a maximum junction temperature higher than a glass transition temperature of the mold compound, the electrically insulating body has a glass transition temperature at or above the maximum junction temperature of the semiconductor die, and the metal substrate is attached to the first metal structure.

    Module Detection Over Single-Wire Interface
    13.
    发明申请
    Module Detection Over Single-Wire Interface 有权

    公开(公告)号：US20250125633A1

    公开(公告)日：2025-04-17

    申请号：US18899180

    申请日：2024-09-27

    Applicant: Infineon Technologies AG

    Inventor： Yow Hing Wong ,  Tse Siang Gary Lim

    IPC: H02J7/00

    Abstract: A primary device includes a single-wire interface, SWI, for a single-wire connection to a secondary device; and a processor, configured to selectively connect the SWI to a supply voltage during a charging phase and to a voltage detection circuit during a subsequent sampling phase, during which the voltage detection circuit detects one or more voltages at the SWI; and determine whether an SWI module is present in the secondary device based on the detected one or more voltages.

    GESTURE CLASS PREDICTION USING MACHINE LEARNING MODEL
    14.
    发明申请
    GESTURE CLASS PREDICTION USING MACHINE LEARNING MODEL 有权

    公开(公告)号：US20250124740A1

    公开(公告)日：2025-04-17

    申请号：US18914761

    申请日：2024-10-14

    Applicant: Infineon Technologies AG

    Inventor： Sarah Seifi ,  Cecilia Carbonelli ,  Simon Mittermaier ,  Tobias Sukianto

    IPC: G06V40/20 ,  G06V10/764

    Abstract: In accordance with an embodiment, a method includes using a machine-learning model to infer from at least one feature vector, a gesture class prediction associated with a gesture; and determining at least one feature relevance vector for the at least one feature vector, where each of the at least one feature relevance vector includes feature relevance values, and each of the feature relevance values are indicative of a dependency of the gesture class prediction on respective one or more feature values of the at least one feature vector.

    DEVICES AND METHODS FOR DETERMINING AN ELECTRICAL OVERCURRENT EVENT
    16.
    发明申请
    DEVICES AND METHODS FOR DETERMINING AN ELECTRICAL OVERCURRENT EVENT 有权

    公开(公告)号：US20250116688A1

    公开(公告)日：2025-04-10

    申请号：US18904140

    申请日：2024-10-02

    Applicant: Infineon Technologies AG

    Inventor： Thomas HAFNER ,  Giampiero CIAMMETTI

    IPC: G01R19/165 ,  H02H3/087

    Abstract: A device for detecting an electrical overcurrent event includes a current sensor configured to generate a first sense signal representative of an absolute current value of an electrical current through an electrical conductor. The device further includes a sense unit configured to generate a second sense signal representative of a temporal change of the electrical current. The device further includes an adjustment unit configured to adjust a previously set first threshold value for the absolute current value based on the second sense signal. The device further includes a detection unit configured to detect an overcurrent event in the electrical conductor based on a comparison between the first sense signal and the adjusted first threshold value.

    Power Semiconductor Device and Method of Producing a Power Semiconductor Device
    18.
    发明申请
    Power Semiconductor Device and Method of Producing a Power Semiconductor Device 有权

    公开(公告)号：US20250113512A1

    公开(公告)日：2025-04-03

    申请号：US18897117

    申请日：2024-09-26

    Applicant: Infineon Technologies AG

    Inventor： Anton Mauder ,  Hans-Jürgen Thees

    IPC: H01L29/739 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

    Abstract: A method of producing a power semiconductor device includes: providing a semiconductor body with a vertically protruding fin covered by an insulation material covered by an electrode material, and an insulating material at least partially covering the electrode material; exposing a portion of the electrode material arranged above an upper portion of the fin; removing the exposed portion of the electrode material to expose the upper portion of the fin, thereby forming a respective recess adjacent to both sides of the exposed upper portion of the fin, the recesses being spatially confined by the insulation material, the electrode material and the insulating material; forming an ILD on top of the exposed portions of the device; and forming a first load terminal above the ILD and configured to contact the upper portion of the fin.

    Voltage-controlled switching device with channel region
    19.
    发明授权
    Voltage-controlled switching device with channel region 有权

    公开(公告)号：US12266718B2

    公开(公告)日：2025-04-01

    申请号：US17668793

    申请日：2022-02-10

    Applicant: Infineon Technologies AG

    Inventor： Hans-Juergen Thees ,  Alim Karmous ,  Anton Mauder

    IPC: H01L29/739 ,  H02M1/08 ,  H03K17/567

    Abstract: A voltage-controlled switching device includes a drain/drift region of a first conductivity type formed in a semiconductor portion. A channel region and the drain/drift region are in direct contact with each other. A source region of a second conductivity type and the channel region are in direct contact with each other. A gate electrode and the channel region are capacitively coupled and configured such that, in a an on-state of the voltage-controlled switching device, a first enhancement region of charge carriers corresponding to the first conductivity type forms in the channel region and band-to-band tunneling is facilitated between the source region and the first enhancement region.

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