Abstract:
High density semiconductor memory devices are provided. The device may include a cell array region including a lower structure, an upper structure, and a selection structure, the selection structure being interposed between the lower and upper structures and including word lines, and a decoding circuit controlling voltages applied to the word lines. The decoding circuit may be configured to apply a first voltage to a pair of the word lines adjacent to each other and to apply a second voltage different from the first voltage to the remaining ones of the word lines, in response to word line address information input thereto.
Abstract:
The disclosure relates to various data processing terminals capable of operating in different modes each of which is granted with different authorities to access hardware or software elements of the terminals. More particularly, a terminal includes a lock system operating in a lock mode and a main system operating in an unlock mode, and erases an entire or a selected portion of results obtained by running operations in the lock mode, when a terminal switches from a lock mode to an unlock mode with greater access authority. Because potentially malicious computer codes which may be impregnated into such results are erased before switching to an unlock mode, the terminal enhances an integrity and a security of a terminal, and improves privacy of a user by preventing loss or unintended disclosure of private data stored in a terminal.
Abstract:
Various mobile communication terminals, their operational sequences, and related methods of using such terminals for providing a user with seamless operations in environments with an enhanced security. More particularly, such terminals, sequences, and methods authenticate a user as well as display at least one advertisement screen or content screen on display units, all in response to a single authentication (user) sub-input. Further mobile communication terminals, their operational sequences, and related methods are disclosed where such terminals employ multiple authentication operations but authenticate a user while displaying such screens, all in response to the same number of authentication (user) sub-inputs, thereby ensuring both seamless and secure operations for the user.
Abstract:
Provided is a method of providing information through a mobile device, in which an information providing screen is outputted only during the first activation performed within a predetermined time range designated by a user. Therefore, inconvenience resulting from repetitive outputs of the information providing screen can be resolved.
Abstract:
A sensing circuit of a semiconductor memory device is provided which includes a bit line having a first edge and a second edge, a sensing line, a current supply unit, and a sense amplifier. A plurality of memory cells is connected between the first edge and the second edge. The sensing line is connected to the second edge of the bit line, and the current supply unit supplies a sensing current via the first edge of the bit line. The sense amplifier senses data stored at a selected memory cell by comparing a sensing voltage of the sensing line with a reference voltage when the sensing current flows to the selected memory cell from the first edge of the bit line.
Abstract:
A sensing circuit of a semiconductor memory device is provided which includes a bit line having a first edge and a second edge, a sensing line, a current supply unit, and a sense amplifier. A plurality of memory cells is connected between the first edge and the second edge. The sensing line is connected to the second edge of the bit line, and the current supply unit supplies a sensing current via the first edge of the bit line. The sense amplifier senses data stored at a selected memory cell by comparing a sensing voltage of the sensing line with a reference voltage when the sensing current flows to the selected memory cell from the first edge of the bit line.
Abstract:
A memory device includes a lower interconnection in a semiconductor substrate, the lower interconnection being made of a material different from the semiconductor substrate, a selection element on the lower interconnection, and a memory element on the selection element.
Abstract:
According to an example embodiment, a variable resistance memory device includes a lower electrode that includes a spacer-shaped first sub lower electrode and a second sub lower electrode covering a curved sidewall of the first sub lower electrode. The second sub lower electrode extends upward to protrude above the top of the first sub lower electrode. The lower electrode includes an upward-tapered shape.
Abstract:
This disclosure generally relates to various directional input units of a mobile communication terminal, where such directional input units receive a single user input or multiple concurrent user inputs and then acquires at least one selecting (user) sub-input therefrom while a terminal is in its powered-off state or its off-state. After acquiring the selecting user sub-input, a terminal runs at least one pre-selected operation which is selected from a set of multiple pre-selected operations and which matches the selecting user sub-input when a terminal powers on from its powered-off state or wakes up from its off-state. A directional input unit may acquire the selecting user sub-input from a movement of at least a portion thereof, a contact between at least a portion thereof and a user body part, or the like. As a result, a terminal can provide a user with more seamless operations.
Abstract:
Provided is a method of providing information through a mobile device, in which an information providing screen is outputted only during the first activation performed within a predetermined time range designated by a user. Therefore, inconvenience resulting from repetitive outputs of the information providing screen can be resolved.