公开(公告)号：US20100048011A1

公开(公告)日：2010-02-25

申请号：US12371672

申请日：2009-02-16

Applicant: Matt Yeh ,  Shun Wu Lin ,  Chi-Chun Chen ,  Ryan Chia-Jen Chen ,  Yi-Hsing Chen ,  Chien-Hao Chen ,  Donald Y. Chao ,  Kuo-Bin Huang

Inventor： Matt Yeh ,  Shun Wu Lin ,  Chi-Chun Chen ,  Ryan Chia-Jen Chen ,  Yi-Hsing Chen ,  Chien-Hao Chen ,  Donald Y. Chao ,  Kuo-Bin Huang

IPC: H01L21/3205

CPC classification number: H01L21/28105 ,  H01L21/28123 ,  H01L21/28158 ,  H01L21/31111 ,  H01L21/32139 ,  H01L29/401

Abstract: Provided are methods of patterning metal gate structures including a high-k gate dielectric. In an embodiment, a soluble hard mask layer may be used to provide a masking element to pattern a metal gate. The soluble hard mask layer may be removed from the substrate by water or a photoresist developer. In an embodiment, a hard mask including a high-k dielectric is formed. In a further embodiment, a protection layer is formed underlying a photoresist pattern. The protection layer may protect one or more layers formed on the substrate from a photoresist stripping process.

Abstract translation: 提供了包括高k栅极电介质的金属栅极结构的图案化方法。 在一个实施方案中，可以使用可溶性硬掩模层来提供掩模元件以对金属栅极进行图案化。 可溶性硬掩模层可以通过水或光致抗蚀剂显影剂从基底上去除。 在一个实施例中，形成包括高k电介质的硬掩模。 在另一个实施例中，保护层形成在光致抗蚀剂图案下面。 保护层可以保护形成在衬底上的一个或多个层与光致抗蚀剂剥离工艺。

公开(公告)号：US08932962B2

公开(公告)日：2015-01-13

申请号：US13442040

申请日：2012-04-09

Applicant: Weibo Yu ,  Kuo Bin Huang ,  Chao-Cheng Chen ,  Syun-Ming Jang

Inventor： Weibo Yu ,  Kuo Bin Huang ,  Chao-Cheng Chen ,  Syun-Ming Jang

IPC: H01L21/302

CPC classification number: H01L21/6708 ,  H01L21/30608 ,  H01L21/31111 ,  H01L21/67109 ,  H01L22/12 ,  H01L22/20

Abstract: A method and apparatus for dispensing a liquid etchant onto a wafer dispenses the liquid etchant onto a wafer using a scanning dispensing nozzle while controlling the dispensing temperature of the etchant in real time as a function of the radial position of the dispensing nozzle over the wafer. The dispensing temperature of the etchant is controlled to enhance the effectiveness of the etchant and thus compensate for the lower etching rate zones in the wafer.

Abstract translation: 用于将液体蚀刻剂分配到晶片上的方法和设备使用扫描分配喷嘴将液体蚀刻剂分配到晶片上，同时根据分配喷嘴在晶片上的径向位置实时控制蚀刻剂的分配温度。 控制蚀刻剂的分配温度以提高蚀刻剂的有效性，从而补偿晶片中较低的蚀刻速率区域。

公开(公告)号：US20130267099A1

公开(公告)日：2013-10-10

申请号：US13442040

申请日：2012-04-09

Applicant: Weibo YU ,  Kuo Bin HUANG ,  Chao-Cheng CHEN ,  Syun-Ming JANG

Inventor： Weibo YU ,  Kuo Bin HUANG ,  Chao-Cheng CHEN ,  Syun-Ming JANG

IPC: H01L21/306

CPC classification number: H01L21/6708 ,  H01L21/30608 ,  H01L21/31111 ,  H01L21/67109 ,  H01L22/12 ,  H01L22/20

Abstract: A method and apparatus for dispensing a liquid etchant onto a wafer dispenses the liquid etchant onto a wafer using a scanning dispensing nozzle while controlling the dispensing temperature of the etchant in real time as a function of the radial position of the dispensing nozzle over the wafer. The dispensing temperature of the etchant is controlled to enhance the effectiveness of the etchant and thus compensate for the lower etching rate zones in the wafer.

Abstract translation: 用于将液体蚀刻剂分配到晶片上的方法和设备使用扫描分配喷嘴将液体蚀刻剂分配到晶片上，同时根据分配喷嘴在晶片上的径向位置实时控制蚀刻剂的分配温度。 控制蚀刻剂的分配温度以提高蚀刻剂的有效性，从而补偿晶片中较低的蚀刻速率区域。

公开(公告)号：US20110086504A1

公开(公告)日：2011-04-14

申请号：US12879371

申请日：2010-09-10

Applicant: Kuo Bin HUANG ,  Hsin-Chien LU ,  Ryan Chia-Jen CHEN ,  Chi-Ming YANG ,  Chyi Shyuan CHERN ,  Chin-Hsiang LIN

Inventor： Kuo Bin HUANG ,  Hsin-Chien LU ,  Ryan Chia-Jen CHEN ,  Chi-Ming YANG ,  Chyi Shyuan CHERN ,  Chin-Hsiang LIN

IPC: H01L21/3205 ,  H01L21/302

CPC classification number: H01L21/28238 ,  H01L21/02071 ,  H01L21/823842 ,  H01L21/823857

Abstract: A method for forming an integrated circuit is provided. The method includes forming a gate dielectric structure over a substrate. A titanium-containing sacrificial layer is formed, contacting the gate dielectric structure. The whole titanium-containing sacrificial layer is substantially removed.

Abstract translation: 提供一种用于形成集成电路的方法。 该方法包括在衬底上形成栅极电介质结构。 形成与该栅电介质结构接触的含钛牺牲层。 基本上除去了整个含钛牺牲层。

公开(公告)号：US09355874B2

公开(公告)日：2016-05-31

申请号：US13244337

申请日：2011-09-24

Applicant: Weibo Yu ,  Hsueh-Chin Lu ,  Han-Guan Chew ,  Kuo Bin Huang ,  Chao-Cheng Chen ,  Syun-Ming Jang

Inventor： Weibo Yu ,  Hsueh-Chin Lu ,  Han-Guan Chew ,  Kuo Bin Huang ,  Chao-Cheng Chen ,  Syun-Ming Jang

IPC: C03C15/00 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01L21/6708 ,  H01L21/31111

Abstract: A single wafer etching apparatus and various methods implemented in the single wafer etching apparatus are disclosed. In an example, etching a silicon nitride layer in a single wafer etching apparatus includes: heating a phosphoric acid to a first temperature; heating a sulfuric acid to a second temperature; mixing the heated phosphoric acid and the heated sulfuric acid; heating the phosphoric acid/sulfuric acid mixture to a third temperature; and etching the silicon nitride layer with the heated phosphoric acid/sulfuric acid mixture.

Abstract translation: 公开了在单晶片蚀刻装置中实现的单晶片蚀刻装置和各种方法。 在一个实施例中，在单晶片蚀刻装置中蚀刻氮化硅层包括：将磷酸加热至第一温度; 将硫酸加热至第二温度; 混合加热的磷酸和加热的硫酸; 将磷酸/硫酸混合物加热至第三温度; 并用加热的磷酸/硫酸混合物蚀刻氮化硅层。