Abstract:
An electronic device includes a base body, which has a top side and also an underside lying opposite the top side. The base body has connection locations at its underside. An electronic component is arranged at the base body at the top side of the base body. The base body has at least one side area having at least one point of inspection having a first region and second region. The second region is embodied as an indentation in the first region. The first and the second region contain different materials.
Abstract:
An optoelectronic semiconductor component (100) is specified, with a support (1) which has a mounting surface (11) and at least one penetration (3), where the penetration (3) extends from the mounting surface (11) to a bottom surface (12) of the support (1) that lies opposite the mounting surface (11); at least one optoelectronic semiconductor chip (2), which is mounted on the mounting surface (11); a radiation-transparent casting body (5), which surrounds the at least one optoelectronic semiconductor chip (2) at least in places, where the casting body (5) is arranged at least in places in the penetration (3) of the support (1).
Abstract:
An optoelectronic semiconductor component includes a substrate that has an upper side and an under side lying opposite the upper side. The substrate is formed with an electrically conductive mounting region, an electrically conductive connection region and an electrically isolating oxidation region. An optoelectronic part is arranged on the upper side of the substrate in the region of the mounting region. The oxidation region electrically isolates the mounting region from the connection region. The oxidation region extends, without interruption, from the upper side of the substrate to the underside of the substrate. The mounting region and the connection region are formed with aluminum and the oxidation region is formed with an oxide of the aluminum. The mounting region, the oxidation region and the connection region being are designed contiguously to form an entity.
Abstract:
An optoelectronic component includes a housing. At least one semiconductor chip is arranged in the housing. The semiconductor chip includes an active layer suitable for producing or detecting electromagnetic radiation. A casting compound at least partially surrounds the semiconductor chip. Reflective particles are embedded in the casting compound.
Abstract:
A semiconductor arrangement including at least one lead arrangement with a top and a bottom opposite the top; a least one solder resist layer which partially covers the top and the bottom, at least sub-zones of the top and the bottom, which are not covered by the solder resist layer, forming electrical base members; an optoelectronic semiconductor element, which is mounted on at least one of the base members on the top of the lead arrangement and is connected electrically conductively therewith, and an encapsulant applied at least to the top of the lead arrangement, the encapsulant covering up the semiconductor element and lying at least partially against the solder resist layer, wherein the base members are bordered all round by the solder resist layer.
Abstract:
The application relates to a semiconductor component, a photo-reflective sensor, and also a method for producing a housing for a photo-reflective sensor, wherein the housing lower part is monolithic and has at least two cavities into which an emitter and a detector are introduced.
Abstract:
An optoelectronic component including a connection carrier comprising a structured carrier strip in which interspaces are filled with an electrically insulating material and an optoelectronic semiconductor chip attached and electrically connected to a top portion of the connection carrier, wherein the electrically insulating material terminates substantially flush with the carrier strip in places or the carrier strip projects beyond the electrically insulating material, and the carrier strip is not covered by the electrically insulating material on the top portion and/or on a bottom portion of the connection carrier.
Abstract:
A semiconductor arrangement including at least one lead arrangement with a top and a bottom opposite the top; at least one solder resist layer which partially covers the top and the bottom, at least sub-zones of the top and the bottom, which are not covered by the solder resist layer, forming electrical base members; an optoelectronic semiconductor element, which is mounted on at least one of the base members on the top of the lead arrangement and is connected electrically conductively therewith, and an encapsulant applied at least to the top of the lead arrangement, the encapsulant covering up the semiconductor element and lying at least partially against the solder resist layer, wherein the base members are bordered all round by the solder resist layer.
Abstract:
An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.
Abstract:
An optoelectronic component including a connection carrier including an electrically insulating film at a top side of the connection carrier, an optoelectronic semiconductor chip at the top side of the connection carrier, a cutout in the electrically insulating film which encloses the optoelectronic semiconductor chip, and a potting body surrounding the optoelectronic semiconductor chip, wherein a bottom area of the cutout is formed at least regionally by the electrically insulating film, the potting body extends at least regionally as far as an outer edge of the cutout facing the optoelectronic semiconductor chip, and the cutout is at least regionally free of the potting body.