Gate driver
    11.
    发明授权
    Gate driver 有权
    闸门司机

    公开(公告)号:US08558587B2

    公开(公告)日:2013-10-15

    申请号:US13482384

    申请日:2012-05-29

    CPC classification number: H02M3/1588 H02M1/08 Y02B70/1466

    Abstract: A gate driver turns on/off a switching element Q1 by applying a control signal from a controller to a gate of the switching element. The switching element has the gate, a drain, and a source and contains a wide-bandgap semiconductor. The gate driver includes a parallel circuit that includes a first capacitor C1 and a first resistor R1 and is connected between the controller and the gate of the switching element and a short-circuit unit S4 that is connected between the gate and source of the switching element and short-circuits the gate and source of the switching element after a delay from an OFF pulse of the control signal.

    Abstract translation: 栅极驱动器通过将来自控制器的控制信号施加到开关元件的栅极来打开/关闭开关元件Q1。 开关元件具有栅极,漏极和源极,并且包含宽带隙半导体。 栅极驱动器包括并联电路,其包括第一电容器C1和第一电阻器R1,并且连接在控制器和开关元件的栅极之间,并且连接在开关元件的栅极和源极之间的短路单元S4 并且在从控制信号的OFF脉冲延迟之后使开关元件的栅极和源极短路。

    Electromechanical transducer film and method for manufacturing electromechanical transducer film
    13.
    发明授权
    Electromechanical transducer film and method for manufacturing electromechanical transducer film 有权
    机电换能器薄膜及制造机电换能器薄膜的方法

    公开(公告)号:US08425026B2

    公开(公告)日:2013-04-23

    申请号:US13004203

    申请日:2011-01-11

    CPC classification number: B41J2/14233 H01L41/0805 H01L41/0926 H01L41/318

    Abstract: A method for manufacturing an electromechanical transducer film including a lower electrode and plural layers of a sol-gel solution film formed on the lower electrode by an inkjet method, the method including the steps of a) modifying a surface of the lower electrode, b) forming a first sol-gel solution film on the surface of the lower electrode by ejecting droplets of a sol-gel solution to the surface of the lower electrode, and c) forming a second sol-gel solution film on the first sol-gel solution film by ejecting droplets of the sol-gel solution to a surface of the first sol-gel solution film. Adjacent dots formed on the surface of the lower electrode by the droplets ejected in step b) overlap each other. Adjacent dots formed on the surface of the first sol-gel solution film by the droplets ejected in step c) do not overlap each other.

    Abstract translation: 一种制造机电换能器薄膜的方法,所述机电换能器薄膜包括下电极和通过喷墨方法形成在下电极上的多层溶胶 - 凝胶溶液膜,所述方法包括以下步骤:a)修改下电极的表面,b) 通过将溶胶 - 凝胶溶液的液滴喷射到下电极的表面,在下电极的表面上形成第一溶胶 - 凝胶溶液膜,以及c)在第一溶胶 - 凝胶溶液上形成第二溶胶 - 凝胶溶液膜 通过将溶胶 - 凝胶溶液的液滴喷射到第一溶胶 - 凝胶溶液膜的表面上。 在步骤b)中喷射的液滴在下电极的表面上形成的相邻点彼此重叠。 在步骤c)中喷射的液滴在第一溶胶 - 凝胶溶液膜的表面上形成的相邻点彼此不重叠。

    GATE DRIVE CIRCUIT
    14.
    发明申请
    GATE DRIVE CIRCUIT 有权
    门控驱动电路

    公开(公告)号:US20110215840A1

    公开(公告)日:2011-09-08

    申请号:US13041689

    申请日:2011-03-07

    Applicant: OSAMU MACHIDA

    Inventor: OSAMU MACHIDA

    CPC classification number: H03K3/00 H03K5/08

    Abstract: A switch device comprised of a wide band gap semiconductor is provided. The switch device comprises a drain, a source, a gate and a gate voltage clamp circuit, which is connected between a signal terminal, to which a signal for driving the gate is input, and the gate through a series circuit of a capacitor and a resistance, and which comprises a diode and a voltage limiter circuit provided between the drain and the gate.

    Abstract translation: 提供了由宽带隙半导体构成的开关装置。 开关装置包括漏极,源极,栅极和栅极电压钳位电路,其连接在输入用于驱动栅极的信号的信号端和栅极之间,通过电容器的串联电路和 电阻,并且其包括设置在漏极和栅极之间的二极管和限压器电路。

    NORMALLY-OFF ELECTRONIC SWITCHING DEVICE
    15.
    发明申请
    NORMALLY-OFF ELECTRONIC SWITCHING DEVICE 有权
    正常电子开关装置

    公开(公告)号:US20090167411A1

    公开(公告)日:2009-07-02

    申请号:US12343081

    申请日:2008-12-23

    Abstract: A device capable of bidirectional on-off switching control of an electric circuit. Included is a normally-on HEMT connected between a pair of terminals of the device. A normally-off MOSFET of relatively low antivoltage strength is connected between the HEMT and one of the pair of terminals, and another similar MOSFET between the HEMT and the other of the terminal pair. A diode is connected in inverse parallel with each MOSFET, and two other diodes are connected between the gate of the HEMT and the pair of terminals respectively. The switching device as a whole is normally off.

    Abstract translation: 一种能够对电路进行双向开 - 关切换控制的装置。 包括连接在设备的一对终端之间的通常的HEMT。 HEMT与一对端子之间连接一个具有相对较低抗电压强度的常闭MOSFET,以及HEMT与另一个端子对之间的另一个类似的MOSFET。 二极管与每个MOSFET反并联连接,另外两个二极管分别连接在HEMT的栅极和一对端子之间。 整个开关装置通常关闭。

    Ink jet head and ink jet recording apparatus
    16.
    发明授权
    Ink jet head and ink jet recording apparatus 失效
    喷墨头和喷墨记录装置

    公开(公告)号:US07192130B2

    公开(公告)日:2007-03-20

    申请号:US10752511

    申请日:2004-01-08

    Abstract: An ink jet head includes: a pressure chamber that stores an ink and has an orifice; a filter plate including a through hole portion and a filter portion, the through hold portion disposed separately from the filter portion with a certain gap; a supply unit that supplies the ink through the filter portion to the pressure chamber; and a jetting unit that jets ink droplets through the orifice from the pressure chamber. The filter portion is formed to have a first aperture ratio. At least one through hole is formed on the through hole potion so that the filter portion has a second aperture ratio. The first aperture ratio is smaller than the second aperture ratio.

    Abstract translation: 喷墨头包括:储存油墨并具有孔口的压力室; 所述过滤板包括通孔部分和过滤器部分,所述通过保持部分与所述过滤器部分分开设置有一定间隙; 供应单元,其通过过滤器部分将油墨供应到压力室; 以及喷射单元,其从压力室喷射墨滴通过孔口。 过滤器部分形成为具有第一孔径比。 在通孔部分上形成至少一个通孔,使得过滤器部分具有第二孔径比。 第一开口率小于第二开口率。

    Semiconductor device
    17.
    发明申请
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US20060261356A1

    公开(公告)日:2006-11-23

    申请号:US11490328

    申请日:2006-07-20

    CPC classification number: H01L29/41766 H01L29/2003 H01L29/7787 H01L29/812

    Abstract: A semiconductor device having a GaN-based main semiconductor region formed on a silicon substrate via a buffer region. Source, drain and gate electrodes are formed on the main semiconductor region, and a back electrode on the back of the substrate. The substrate is constituted of two semiconductor regions of opposite conductivity types, with a pn junction therebetween which is conducive to a higher voltage-withstanding capability between the drain and back electrodes.

    Abstract translation: 一种具有通过缓冲区形成在硅衬底上的GaN基主半导体区的半导体器件。 源极,漏极和栅电极形成在主半导体区域上,背面电极形成在衬底的背面。 衬底由具有相反导电类型的两个半导体区域构成,其间具有pn结,其有利于漏极和背电极之间更高的耐压能力。

    Inkjet head and a method of manufacturing the same
    19.
    发明申请
    Inkjet head and a method of manufacturing the same 失效
    喷墨头及其制造方法

    公开(公告)号:US20050012782A1

    公开(公告)日:2005-01-20

    申请号:US10890261

    申请日:2004-07-14

    CPC classification number: B41J2/14274 B41J2002/14419

    Abstract: The disclosure is concerned with an inkjet head comprising; a chamber substrate for forming an ink flow passage; a diaphragm substrate including a diaphragm for pressurizing a pressure chamber disposed in the chamber substrate; and a nozzle substrate for jetting ink pressurized by the diaphragm, wherein the diaphragm substrate is made of silicon, the diaphragm is made of a material selected from the group of silicon oxide film and metal film, and the diaphragm is formed in the diaphragm substrate. The disclosure is also directed to a method of manufacturing the inkjet head.

    Abstract translation: 本公开涉及一种喷墨头,包括: 用于形成油墨流动通道的室基板; 膜片基板,包括用于对设置在所述室基板中的压力室进行加压的隔膜; 以及用于喷射由所述隔膜加压的墨的喷嘴基板,其中所述隔膜基板由硅制成,所述隔膜由选自氧化硅膜和金属膜的材料制成,并且所述隔膜形成在所述隔膜基板中。 本发明还涉及一种制造喷墨头的方法。

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