Abstract:
A gate driver turns on/off a switching element Q1 by applying a control signal from a controller to a gate of the switching element. The switching element has the gate, a drain, and a source and contains a wide-bandgap semiconductor. The gate driver includes a parallel circuit that includes a first capacitor C1 and a first resistor R1 and is connected between the controller and the gate of the switching element and a short-circuit unit S4 that is connected between the gate and source of the switching element and short-circuits the gate and source of the switching element after a delay from an OFF pulse of the control signal.
Abstract:
A semiconductor devices includes a first die pad having the conductivity connected to one end of a DC power source, a second die pad having the conductivity connected to the other end of the DC power source, a first switching element provided on the first die pad, receiving DC power from the DC power source via the first die pad, and having a terminal opposite to the first die pad connected to a first output terminal, and a second switching element provided on the second die pad, receiving the DC power from the DC power source via the second die pad, and connected to the first output terminal, and having a terminal opposite to the second die pad.
Abstract:
A method for manufacturing an electromechanical transducer film including a lower electrode and plural layers of a sol-gel solution film formed on the lower electrode by an inkjet method, the method including the steps of a) modifying a surface of the lower electrode, b) forming a first sol-gel solution film on the surface of the lower electrode by ejecting droplets of a sol-gel solution to the surface of the lower electrode, and c) forming a second sol-gel solution film on the first sol-gel solution film by ejecting droplets of the sol-gel solution to a surface of the first sol-gel solution film. Adjacent dots formed on the surface of the lower electrode by the droplets ejected in step b) overlap each other. Adjacent dots formed on the surface of the first sol-gel solution film by the droplets ejected in step c) do not overlap each other.
Abstract:
A switch device comprised of a wide band gap semiconductor is provided. The switch device comprises a drain, a source, a gate and a gate voltage clamp circuit, which is connected between a signal terminal, to which a signal for driving the gate is input, and the gate through a series circuit of a capacitor and a resistance, and which comprises a diode and a voltage limiter circuit provided between the drain and the gate.
Abstract:
A device capable of bidirectional on-off switching control of an electric circuit. Included is a normally-on HEMT connected between a pair of terminals of the device. A normally-off MOSFET of relatively low antivoltage strength is connected between the HEMT and one of the pair of terminals, and another similar MOSFET between the HEMT and the other of the terminal pair. A diode is connected in inverse parallel with each MOSFET, and two other diodes are connected between the gate of the HEMT and the pair of terminals respectively. The switching device as a whole is normally off.
Abstract:
An ink jet head includes: a pressure chamber that stores an ink and has an orifice; a filter plate including a through hole portion and a filter portion, the through hold portion disposed separately from the filter portion with a certain gap; a supply unit that supplies the ink through the filter portion to the pressure chamber; and a jetting unit that jets ink droplets through the orifice from the pressure chamber. The filter portion is formed to have a first aperture ratio. At least one through hole is formed on the through hole potion so that the filter portion has a second aperture ratio. The first aperture ratio is smaller than the second aperture ratio.
Abstract:
A semiconductor device having a GaN-based main semiconductor region formed on a silicon substrate via a buffer region. Source, drain and gate electrodes are formed on the main semiconductor region, and a back electrode on the back of the substrate. The substrate is constituted of two semiconductor regions of opposite conductivity types, with a pn junction therebetween which is conducive to a higher voltage-withstanding capability between the drain and back electrodes.
Abstract:
A chamber support plate of an inkjet head is formed as a member different from a housing. The chamber support plate is formed with a plurality of grooves at high density by a dicing saw or the like. Piezoelectric elements are inserted into the grooves and adhered to a chamber plate. The plurality of grooves define comb teeth portions, which support the chamber plate at positions between adjacent piezoelectric elements.
Abstract:
The disclosure is concerned with an inkjet head comprising; a chamber substrate for forming an ink flow passage; a diaphragm substrate including a diaphragm for pressurizing a pressure chamber disposed in the chamber substrate; and a nozzle substrate for jetting ink pressurized by the diaphragm, wherein the diaphragm substrate is made of silicon, the diaphragm is made of a material selected from the group of silicon oxide film and metal film, and the diaphragm is formed in the diaphragm substrate. The disclosure is also directed to a method of manufacturing the inkjet head.
Abstract:
A print head for ink jet printer having a reduced length in a main scanning direction and an elongated length in an auxiliary scanning direction perpendicular to the main scanning direction. A plurality of linear print head modules are arrayed in the auxiliary scanning direction, and each linear print head module extends in a slanting direction with respect to the main scanning direction by a predetermined angle. Further, each linear print head module has a width in a direction perpendicular to its extending direction. The slanting angle and the width determine scanning pitch extending in the auxiliary scanning direction and can reduces the length of the print head in the main scanning direction.