公开(公告)号：US20050103623A1

公开(公告)日：2005-05-19

申请号：US10932076

申请日：2004-09-02

Applicant: Yuri Tolmachev ,  Dong-joon Ma ,  Sergiy Navala ,  Dae-il Kim

Inventor： Yuri Tolmachev ,  Dong-joon Ma ,  Sergiy Navala ,  Dae-il Kim

IPC: H01L21/203 ,  C23C14/35 ,  C23C14/44 ,  H01J37/32 ,  H01J37/34 ,  C23C14/34

CPC classification number: H01J37/321 ,  C23C14/358 ,  H01J37/3408

Abstract: Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a material to be deposited on the substrate into the process chamber, facing the substrate holder, a gas injection unit to inject a process gas into the process chamber, a bias power source that applies a bias potential to the substrate holder, a helical self-resonant coil that produces plasma for ionization of the deposition material in the process chamber, one end of the helical self-resonant coil being grounded and the other end being electrically open, and an RF generator to supply an RF power to the helical self-resonant coil. The use of a helical self-resonant coil enables the IPVD apparatus to ignite and operate at very low chamber pressure such as approximately 0.1 mtorr, and to produce high density plasma with high efficiency compared to a conventional IPVD apparatus. Accordingly, a high efficiency of ionization of deposition material is achieved.

Abstract translation: 提供了一种具有螺旋自谐振线圈的电离物理气相沉积（IPVD）装置。 IPVD装置包括具有支撑待处理基板的基板保持器的处理室，将要沉积在基板上的材料供给到面向基板保持器的处理室中的沉积材料源，注入单元 将处理气体进入处理室，向衬底保持器施加偏置电位的偏压电源，产生用于离子化处理室中的沉积材料的等离子体的螺旋自谐振线圈，螺旋自谐振线圈的一端 接地并且另一端电气打开，以及RF发生器，用于向螺旋自谐振线圈提供RF功率。 螺旋自谐振线圈的使用使得IPVD装置能够在非常低的室压力（例如约0.1mtorr）下点燃和操作，并且与传统的IPVD装置相比，可以高效率地产生高密度等离子体。 因此，实现了沉积材料的高效离子化。

公开(公告)号：US07355357B2

公开(公告)日：2008-04-08

申请号：US11411966

申请日：2006-04-27

Applicant: Won-taek Park ,  Vasily Pashkovski ,  Yuri Tolmachev

Inventor： Won-taek Park ,  Vasily Pashkovski ,  Yuri Tolmachev

IPC: H05H9/00

CPC classification number: F03H1/00 ,  H01L21/67063 ,  H05H1/54

Abstract: A plasma accelerator is provided. The plasma accelerator includes a chamber having a closed top, an opened bottom and a lateral surface, a first coil section comprising a plurality of coils that are connected to one another in series and are wound around the lateral surface of the chamber in opposite directions, and a second coil section comprising a plurality of coils that are wound around the lateral surface of the chamber between coils of the first coil section in opposite directions. Accordingly, it is possible to make the mutual inductance between the coils small, to accurately adjust levels and phase differences of currents to be applied to the coils, and also to simplify the driving circuit.

Abstract translation: 提供等离子体加速器。 等离子体加速器包括具有闭合顶部，敞开的底部和侧面的腔室，第一线圈段，其包括彼此串联连接的多个线圈，并且沿相反方向缠绕在腔室的侧表面上， 以及包括多个线圈的第二线圈段，所述多个线圈在相反方向上缠绕在所述第一线圈段的线圈之间的所述腔室的侧表面上。 因此，可以使线圈之间的互感小，以精确地调整施加到线圈的电流的电平和相位差，并且还简化驱动电路。

公开(公告)号：US20080061702A1

公开(公告)日：2008-03-13

申请号：US11684199

申请日：2007-03-09

Applicant: Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

Inventor： Andrey Ushakov ,  Yuri Tolmachev ,  Vladimir Volynets ,  Won Ceak Pak ,  Vasily Pashkovskiy ,  Sung Chang Park ,  Yung Hee Lee

IPC: H05H1/00

CPC classification number: H01J37/321 ,  H01J37/32091

Abstract: An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

Abstract translation: 一种可应用于半导体处理的等离子体生成装置和方法。 该装置包括具有限定在其中的等离子体产生空间的腔室，位于腔室内的下部电极，面对下部电极的上部电极，并设置在腔室内以构成第一等离子体发生源，第二等离子体发生源位于较高 位于上电极的下表面，并且设置在上电极的外周;以及电源，用于向第一和第二等离子体发生源供电。

公开(公告)号：US20080023653A1

公开(公告)日：2008-01-31

申请号：US11603100

申请日：2006-11-22

Applicant: Young dong Lee ,  Yuri Tolmachev ,  Vladimir Volynets ,  Vasily Pashkovskiy

Inventor： Young dong Lee ,  Yuri Tolmachev ,  Vladimir Volynets ,  Vasily Pashkovskiy

IPC: G21K5/08

CPC classification number: H01J37/321 ,  H01J37/32412

Abstract: A plasma based ion implantation apparatus. The apparatus includes a first chamber in which plasma is generated, a coil antenna to generate the plasma in the first chamber, a second chamber in which ions of the plasma are implanted into a target, the second chamber having an incoming port through which the plasma is diffused from the first chamber to the second chamber, a power source to supply high voltage power to the target in the second chamber, and a grounded conductor positioned to face the target seated on the seating table. The first chamber is formed with a ring shape opening of a predetermined width at an upper periphery of the second chamber to communicate with the second chamber.

Abstract translation: 一种基于等离子体的离子注入装置。 该装置包括其中产生等离子体的第一室，用于在第一室中产生等离子体的线圈天线，其中将等离子体的离子注入到靶中的第二室，第二室具有入口，等离子体 从所述第一室扩散到所述第二室，电源，用于向所述第二室中的所述目标提供高压电力;以及接地导体，其定位成面对所述坐在所述座台上的所述目标。 第一室在第二室的上周边形成具有预定宽度的环形开口，以与第二室连通。