公开(公告)号：US12087591B2

公开(公告)日：2024-09-10

申请号：US17707537

申请日：2022-03-29

Applicant: Tokyo Electron Limited

Inventor： Gen Tamamushi ,  Kazuya Nagaseki

IPC: H01L21/3065 ,  H01J37/30 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3213 ,  H01J37/305 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/3007 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32935 ,  H01L21/30621 ,  H01L21/32136 ,  H01J37/3053 ,  H01J2237/3341 ,  H01L21/67069 ,  H01L21/67253

Abstract: A plasma processing apparatus includes a chamber; a substrate support disposed in the chamber and including a lower electrode; an upper electrode disposed above the substrate support; an RF source that supplies an RF power to the lower electrode or the upper electrode, the RF power having a plurality of power levels during a first sequence in a repeating time period, the plurality of power levels including a first power level during a first state and a second state, and a second power level during a third state and a fourth state; and a DC source that applies a DC voltage to the lower electrode, the DC voltage having a plurality of voltage levels during the first sequence in the repeating time period.

公开(公告)号：US20240290578A1

公开(公告)日：2024-08-29

申请号：US18115537

申请日：2023-02-28

Applicant: Applied Materials, Inc.

Inventor： Kartik RAMASWAMY ,  Yue GUO ,  A N M Wasekul AZAD ,  Yang YANG ,  Nicolas J. BRIGHT

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01J37/321

Abstract: A method and apparatus for spatially switching radio frequency (RF) power from a single RF power generator to a selected one of two or more impedance matching networks coupled to associated RF electrodes for forming plasma in a plasma chamber. Full RF power may be switched within microseconds to the selected one of the two or more impedance matching networks. The two or more impedance matching networks may be coupled to one or more plasma generating electrodes. The two or more impedance matching networks may be interleaved during plasma processing recipe operation. Impedance matching networks can alternate back and forth during operation of a plasma processing recipe. This interleaving in operation and impedance transformation capabilities may also be performed with more than two impedance matching networks, and may be beneficial in enabling the use of fixed tuned impedance matching networks instead of requiring variable impedance matching networks having variable tuning capabilities.

公开(公告)号：US12075554B2

公开(公告)日：2024-08-27

申请号：US17237913

申请日：2021-04-22

Applicant: MKS Instruments, Inc.

Inventor： Xing Chen ,  Ilya Pokidov ,  Atul Gupta

IPC: H05H1/46 ,  H01J37/32

CPC classification number: H05H1/46 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32467 ,  H01J37/32522

Abstract: A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.

公开(公告)号：US20240266156A1

公开(公告)日：2024-08-08

申请号：US18427460

申请日：2024-01-30

Applicant: KOREA INSTITUTE OF FUSION ENERGY

Inventor： Jongsik KIM

IPC: H01J37/32 ,  H01P5/18 ,  H03H7/01 ,  H03H7/06

CPC classification number: H01J37/3299 ,  H01J37/32091 ,  H01J37/321 ,  H01P5/182 ,  H03H7/06 ,  H03H7/1791 ,  H01J2237/24564

Abstract: Provided is a module for measuring current/voltage/power of a plasma apparatus, which includes a process chamber having a sealed processing space in which plasma is formed to process a substrate; a substrate support unit disposed in the processing space and on which a substrate is seated; and a gas injection unit configured to inject gas for performing a process in the processing space, wherein, in a substrate processing apparatus configured to process the substrate by applying RF power to the process chamber, the gas support unit, and the gas injection unit, the module for measuring current/voltage/power of the plasma apparatus is disposed adjacent to at least one application line among a first power application line for applying the RF power and a ground line for grounding to measure a RF voltage, current, and power of an input wave and a reflected wave generated by plasma generated in the processing space.

公开(公告)号：US12057319B2

公开(公告)日：2024-08-06

申请号：US17438884

申请日：2020-03-12

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Alexander Paterson

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02 ,  H01L21/30

CPC classification number: H01L21/31116 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/3003 ,  H01L21/31105 ,  H01L21/31111 ,  H01J37/32715 ,  H01J2237/2007 ,  H01J2237/334

Abstract: A method is provided, including the following method operations: generating a deuterium plasma, the deuterium plasma including a plurality of energetic deuterium atoms; and directing one or more of the plurality of energetic deuterium atoms to a surface of a substrate, the surface of the substrate having a region of silicon dioxide, the region of silicon dioxide having an underlying silicon layer; wherein the one or more of the plurality of energetic deuterium atoms selectively etch the region of silicon oxide, to the exclusion of the underlying silicon layer.

公开(公告)号：US20240234101A1

公开(公告)日：2024-07-11

申请号：US18613512

申请日：2024-03-22

Applicant: INNOVATION FOR CREATIVE DEVICES CO., LTD.

Inventor： Buil JEON ,  Taeho SHIN ,  Dooho LIM ,  Jungsu PARK ,  Bumsoo ON ,  Seungho LEE

IPC: H01J37/32

CPC classification number: H01J37/32633 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32357 ,  H01J2237/0203 ,  H01J2237/3343

Abstract: A plasma substrate treatment apparatus according to one embodiment of the present invention comprises: a remote plasma generator for generating plasma and an active species; an upper chamber having an opening connected to an output port of the remote plasma generator and receiving and diffusing the active species of the remote plasma generator; a first baffle disposed on the opening of the upper chamber; a lower chamber receiving the diffused active species from the upper chamber; a second baffle partitioning the upper chamber and the lower chamber and transmitting the active species; a substrate holder for supporting a substrate disposed in the lower chamber; and an RF power source applying RF power to the substrate holder.

公开(公告)号：US20240194445A1

公开(公告)日：2024-06-13

申请号：US18284657

申请日：2021-12-16

Applicant: PSK INC.

Inventor： Chi Young LEE ,  A Ram KIM ,  Soo Yeong YANG ,  Young Tak YOON ,  Yun Young LEE ,  Jin Chul SON

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/3244 ,  H01J37/32798 ,  H01J2237/3323

Abstract: Provided is an apparatus for processing a substrate, the apparatus including: a chamber having a processing space; a support unit for supporting a substrate in the processing space; a gas supply unit for supplying process gas to the processing space; and a plasma generation unit for generating plasma from the process gas, in which the plasma generation unit includes: an inner coil part including a plurality of inner coils; an outer coil part provided to surround the inner coil part when viewed from above and including a plurality of outer coils; an upper power source for applying power to the inner coil part and the outer coil part, and a ground plate disposed above the inner coil part and the outer coil part and grounding the inner coil part and the outer coil part.

公开(公告)号：US12009755B2

公开(公告)日：2024-06-11

申请号：US17581039

申请日：2022-01-21

Applicant: SHIMADZU CORPORATION

Inventor： Naoki Yasuda

IPC: H02M3/338 ,  H01J37/32 ,  H02M7/00 ,  H02M7/48 ,  H02M7/5383

CPC classification number: H02M3/3385 ,  H01J37/321 ,  H01J37/32174 ,  H02M7/003 ,  H02M7/4815 ,  H02M7/4818 ,  H02M7/5383

Abstract: Provided is a high-frequency power supply device capable of causing an appropriate current to flow through a transformer. A self-oscillation high-frequency power supply device is provided with a DC power supply, an LC resonant circuit, a switching circuit, and a transformer. The LC resonant circuit includes an induction coil for plasma generation and a capacitor. The switching circuit includes a semiconductor element, the switching circuit being configured to subject DC power supplied from the DC power supply to switching processing to supply high-frequency power to the LC resonant circuit. The transformer includes a primary coil included in the LC resonant circuit and a secondary coil connected to the semiconductor element to turn on/off a semiconductor element. The transformer has a coaxial structure in which the primary coil and the secondary coil are coaxially provided. The LC resonant circuit includes a resistor connected in parallel to the primary coil.

公开(公告)号：US12009220B2

公开(公告)日：2024-06-11

申请号：US17489162

申请日：2021-09-29

Applicant: Beijing E-Town Semiconductor Technology Co., Ltd. ,  Mattson Technology, Inc.

Inventor： Fei Yu ,  Mengyang Xin ,  Junliang Li

IPC: H01L21/311 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/332 ,  H01J2237/334

Abstract: A method for processing a workpiece, a plasma processing apparatus and a semiconductor device are provided. The method includes placing a workpiece including a spacer layer on a workpiece support in a chamber; selecting a composition modulation gas to modulate a volume ratio of carbon and fluorine to process the workpiece, the composition modulation gas includes one or more molecules, the volume ratio of carbon and fluorine is indicative of a distribution of carbon-based polymer deposited on the spacer layer; generating one or more species using one or more plasmas from a process gas to create a mixture, the process gas includes an etching gas and the composition modulation gas; and exposing the workpiece to the mixture to form a polymer layer on at least a portion of the spacer layer and to etch at least a portion of the spacer layer.

公开(公告)号：US20240170253A1

公开(公告)日：2024-05-23

申请号：US18425033

申请日：2024-01-29

Applicant: Kokusai Electric Corporation

Inventor： Teruo YOSHINO ,  Naofumi OHASHI ,  Tadashi TAKASAKI

IPC: H01J37/32

CPC classification number: H01J37/321 ,  H01J37/32128 ,  H01J37/32183

Abstract: There is provided a technique capable of improving a uniformity of a substrate processing on a substrate surface. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate processing room; a plasma generation room; a gas supplier supplying a gas into the plasma generation room; a first coil surrounding the plasma generation room and to which an electric power is supplied; and a second coil surrounding the plasma generation room and to which an electric power is supplied. An axial direction of the second coil is equal to that of the first coil, a winding diameter of the second coil is different from that of the first coil, and a peak of a voltage distribution generated by supplying the electric power to the second coil does not overlap with a peak of a voltage distribution generated by the first coil.