公开(公告)号：US10167304B2

公开(公告)日：2019-01-01

申请号：US15032230

申请日：2014-11-07

Applicant: ADEKA CORPORATION

Inventor： Masako Hatase ,  Masaki Enzu ,  Atsushi Sakurai ,  Tomoharu Yoshino

IPC: C07F15/00 ,  C07C225/14 ,  C23C16/16 ,  C23C16/455

Abstract: Disclosed is a ruthenium compound useful as a precursor in chemical vapor growth, particularly ALD. The compound has good reactivity with a reactive gas, a high vapor pressure, and a low melting point. The compound is represented by general formula (I), wherein R1, R2, and R3 each independently represent a straight or branched chain alkyl group having 1 to 5 carbon atoms, provided that the total number of the carbon atoms of R1 and R2 is 3 to 10. In formula (I), R1 and R2 are each preferably ethyl or isopropyl.

公开(公告)号：US10155784B2

公开(公告)日：2018-12-18

申请号：US15861719

申请日：2018-01-04

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Naoki Yamada ,  Tsubasa Shiratori ,  Akio Saito ,  Tomoharu Yoshino

IPC: C07C251/08 ,  C07F15/06 ,  C07C251/04 ,  C07F1/08 ,  C07F15/04 ,  C23C16/18 ,  C23C16/40 ,  C07F7/28

Abstract: An alcohol compound of formula (II) in which R4 represents a methyl group or an ethyl group, R5 represents a hydrogen atom, and R6 represents a C1-3 linear or branched alkyl group. The alcohol compound has physical properties suitable for a material for forming thin films by CVD, and particularly, physical properties suitable for a material for forming metallic-copper thin films.

公开(公告)号：US09896468B2

公开(公告)日：2018-02-20

申请号：US14413102

申请日：2013-10-21

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Naoki Yamada ,  Tsubasa Shiratori ,  Akio Saito ,  Tomoharu Yoshino

IPC: C23C16/00 ,  C07F15/06 ,  C07C251/08 ,  C07C251/04 ,  C07F1/08 ,  C07F15/04 ,  C23C16/18 ,  C23C16/40 ,  C07F7/28

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R1 represents a methyl group or an ethyl group, R2 represents a hydrogen atom or a methyl group, R3 represents a C1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

公开(公告)号：US20150266904A1

公开(公告)日：2015-09-24

申请号：US14434139

申请日：2013-11-26

Applicant: ADEKA CORPORATION

Inventor： Tomoharu Yoshino ,  Atsushi Sakurai ,  Tsubasa Shiratori ,  Masako Hatase ,  Hiroyuki Uchiuzou ,  Akihiro Nishida

IPC: C07F5/06 ,  C23C16/44 ,  C23C16/06

CPC classification number: C23C16/45553 ,  C07F5/069 ,  C23C16/06 ,  C23C16/403 ,  C23C16/44

Abstract: Disclosed is an aluminum compound of general formula (I) and a thin film forming material containing the aluminum compound. In formula (I), R1 and R2 each represent straight or branched C2-C5 alkyl, and R3 represent methyl or ethyl. R1 and R2 are each preferably ethyl. The compound has a low melting temperature, sufficient volatility, and high thermal stability and is therefore suited for use as a material for thin film formation by CVD.

Abstract translation: 公开了通式（I）的铝化合物和含有铝化合物的薄膜形成材料。 在式（I）中，R 1和R 2各自表示直链或支链C 2 -C 5烷基，R 3表示甲基或乙基。 R1和R2各自优选为乙基。 该化合物具有低的熔融温度，足够的挥发性和高的热稳定性，因此适合用作通过CVD形成薄膜的材料。