公开(公告)号：US11807652B2

公开(公告)日：2023-11-07

申请号：US16631245

申请日：2018-07-04

Applicant: ADEKA CORPORATION

Inventor： Akio Saito ,  Tsubasa Shiratori ,  Yutaro Aoki

IPC: C07F11/00 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02

CPC classification number: C07F11/00 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/0228 ,  H01L21/02175 ,  H01L21/02205

Abstract: The present invention provides a tungsten compound represented by the following general formula (1):




(in the formula, X represents a halogen atom, R1 to R5 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, R6 represents a tertiary butyl group or a tertiary pentyl group, and R7 represents an alkyl group having 1 to 5 carbon atoms. However, when R1 to R5 are all hydrogen atoms and R6 is a tertiary butyl group, and when R1 to R5 are all methyl groups and R6 is a tertiary butyl group, R7 represents an alkyl group having 1 to 3 or 5 carbon atoms).

公开(公告)号：US11332486B2

公开(公告)日：2022-05-17

申请号：US16564125

申请日：2019-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  ADEKA CORPORATION

Inventor： Gyu-Hee Park ,  Takanori Koide ,  Yoshiki Manabe ,  Masayuki Kimura ,  Akio Saito ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F5/06 ,  C09D1/00 ,  C09D5/00 ,  C23C16/20 ,  H01L21/02

Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

公开(公告)号：US20200207790A1

公开(公告)日：2020-07-02

申请号：US16564125

申请日：2019-09-09

Applicant: Samsung Electronics Co., Ltd. ,  Adeka Corporation

Inventor： Gyu-Hee Park ,  Takanori Koide ,  Yoshiki Manabe ,  Masayuki Kimura ,  Akio Saito ,  Jaesoon Lim ,  Younjoung Cho

IPC: C07F5/06 ,  C09D1/00 ,  C09D5/00 ,  H01L21/02 ,  C23C16/20

Abstract: Provided are an aluminum compound and a method for manufacturing a semiconductor device using the same. The aluminum compound may be represented by Formula 1.

公开(公告)号：US20150175642A1

公开(公告)日：2015-06-25

申请号：US14413102

申请日：2013-10-21

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Naoki Yamada ,  Tsubasa Shiratori ,  Akio Saito ,  Tomoharu Yoshino

IPC: C07F15/06 ,  C23C16/18 ,  C07F15/04 ,  C23C16/40 ,  C07F1/08 ,  C07C251/08

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R1 represents a methyl group or an ethyl group, R2 represents a hydrogen atom or a methyl group, R3 represents a C1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.

Abstract translation: 公开了具有适合用于通过CVD形成薄膜的材料的物理性质的金属醇盐化合物，特别是具有适用于形成金属 - 铜薄膜的材料的物理性质的金属醇盐化合物。 金属醇盐化合物由通式（I）表示。 还描述了包含金属醇盐化合物的薄膜形成材料。 （式中，R1表示甲基或乙基，R2表示氢原子或甲基，R3表示C1-3直链或支链烷基，M表示金属原子或硅原子，n表示 金属原子或硅原子的化合价。

公开(公告)号：US20140174323A1

公开(公告)日：2014-06-26

申请号：US14115495

申请日：2012-05-15

Applicant: ADEKA CORPORATION

Inventor： Senji Wada ,  Akio Saito ,  Tomoharu Yoshino

IPC: C07F15/04

CPC classification number: C07F15/045 ,  C07C215/08 ,  C23C16/06 ,  C23C16/406 ,  C23C16/45553

Abstract: An alkoxide compound represented by the following formula (I), and a raw material for thin film formation containing the alkoxide compound. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms, and R2 and R3 each represent a linear or branched alkyl group having 1 to 4 carbon atoms. In the formula (I), R1 is preferably an ethyl group. It is also preferred that one or both of R2 and R3 be an ethyl group. The raw material for thin film formation including an alkoxide compound represented by general formula (I) is preferably used as a raw material for chemical vapor deposition.

Abstract translation: 由下式（I）表示的醇盐化合物和含有所述醇盐化合物的薄膜形成用原料。 式中，R1表示碳原子数2〜4的直链或支链烷基，R2和R3各自表示碳原子数为1〜4的直链或支链烷基。 式（I）中，R 1优选为乙基。 还优选R2和R3中的一个或两个为乙基。 作为用于化学气相沉积的原料，优选使用包含通式（I）表示的醇盐化合物的薄膜形成用原料。

公开(公告)号：US12291541B2

公开(公告)日：2025-05-06

申请号：US17775716

申请日：2020-11-16

Applicant: ADEKA CORPORATION

Inventor： Akio Saito ,  Yutaro Aoki

IPC: C07F5/00 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

Abstract: Provided is a compound represented by the following general formula (1) or (2): where R1 to R4 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R5 and R6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M1 represents a gallium atom or an indium atom; where R7 to R10 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or the like, R11 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, and M2 represents a gallium atom or an indium atom.

公开(公告)号：US10155784B2

公开(公告)日：2018-12-18

申请号：US15861719

申请日：2018-01-04

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Naoki Yamada ,  Tsubasa Shiratori ,  Akio Saito ,  Tomoharu Yoshino

IPC: C07C251/08 ,  C07F15/06 ,  C07C251/04 ,  C07F1/08 ,  C07F15/04 ,  C23C16/18 ,  C23C16/40 ,  C07F7/28

Abstract: An alcohol compound of formula (II) in which R4 represents a methyl group or an ethyl group, R5 represents a hydrogen atom, and R6 represents a C1-3 linear or branched alkyl group. The alcohol compound has physical properties suitable for a material for forming thin films by CVD, and particularly, physical properties suitable for a material for forming metallic-copper thin films.

公开(公告)号：US09896468B2

公开(公告)日：2018-02-20

申请号：US14413102

申请日：2013-10-21

Applicant: ADEKA CORPORATION

Inventor： Atsushi Sakurai ,  Masako Hatase ,  Naoki Yamada ,  Tsubasa Shiratori ,  Akio Saito ,  Tomoharu Yoshino

IPC: C23C16/00 ,  C07F15/06 ,  C07C251/08 ,  C07C251/04 ,  C07F1/08 ,  C07F15/04 ,  C23C16/18 ,  C23C16/40 ,  C07F7/28

CPC classification number: C07F15/065 ,  C07C251/04 ,  C07C251/08 ,  C07F1/08 ,  C07F7/28 ,  C07F15/045 ,  C23C16/18 ,  C23C16/406 ,  C23C16/408

Abstract: Disclosed is a metal alkoxide compound having physical properties suitable for a material for forming thin films by CVD, and particularly, a metal alkoxide compound having physical properties suitable for a material for forming metallic-copper thin films. A metal alkoxide compound is represented by general formula (I). A thin-film-forming material including the metal alkoxide compound is described as well. (In the formula, R1 represents a methyl group or an ethyl group, R2 represents a hydrogen atom or a methyl group, R3 represents a C1-3 linear or branched alkyl group, M represents a metal atom or a silicon atom, and n represents the valence of the metal atom or silicon atom.