公开(公告)号：US11873557B2

公开(公告)日：2024-01-16

申请号：US17504839

申请日：2021-10-19

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Eric James Shero ,  Qi Xie ,  Giuseppe Alessio Verni ,  Petro Deminskyi

IPC: C23C16/06 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/45534 ,  C23C16/45553 ,  C23C16/52

Abstract: The manufacture of semiconductor devices may include methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate.

公开(公告)号：US20230333476A1

公开(公告)日：2023-10-19

申请号：US18133728

申请日：2023-04-12

Applicant: ASM IP Holding, B.V.

Inventor： Yoann Tomczak ,  Kishan Ashokbhai Patel ,  Charles Dezelah

IPC: G03F7/16 ,  H01L21/308 ,  H01L21/3065 ,  G03F7/20

CPC classification number: G03F7/16 ,  H01L21/308 ,  H01L21/3065 ,  G03F7/2004

Abstract: Methods and related systems for forming an EUV-sensitive layer. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a first precursor pulse and a second precursor pulse. The first precursor pulse comprises exposing the substrate to a first precursor. The first precursor comprises two or more acyl halide functional groups. The second precursor pulse comprises exposing the substrate to a second precursor. In some embodiments, the second precursor comprises two or more hydroxyl functional groups.

公开(公告)号：US20230098689A1

公开(公告)日：2023-03-30

申请号：US17818081

申请日：2022-08-08

Applicant: ASM IP Holding, B.V.

Inventor： Charles Dezelah ,  Timothee Blanquart

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

Abstract: A method of forming high quality a-BN layers. The method includes use of a precursor chemistry that is particularly suited for use in a cyclical deposition process such as in chemical vapor deposition (CVD), atomic layer deposition (ALD), and the like. In brief, new methods are described of forming boron nitride (BN) layers from precursors capable of growing amorphous BN (a-BN) films by CVD, ALD, or the like. In some cases, the precursor is or includes a borane adduct of hydrazine or a hydrazine derivative.

公开(公告)号：US20230098114A1

公开(公告)日：2023-03-30

申请号：US17936607

申请日：2022-09-29

Applicant: ASM IP Holding, B.V.

Inventor： Eva Tois ,  Daniele Chiappe ,  Marko Tuominen ,  Viraj Madhiwala ,  Charles Dezelah ,  YongGyu Han ,  Anirudhan Chandrasekaran ,  Shaoren Deng

IPC: H01L21/02

Abstract: The present disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. More particularly, the disclosure relates to methods and apparatuses for depositing an organic layer selectively on a substrate comprising at least two different surfaces. The process comprises providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber. In the method, the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms.

公开(公告)号：US20220411919A1

公开(公告)日：2022-12-29

申请号：US17849077

申请日：2022-06-24

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Ishiwata

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/458

Abstract: The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.

公开(公告)号：US20220285211A1

公开(公告)日：2022-09-08

申请号：US17680711

申请日：2022-02-25

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Shinya Iwashita ,  Charles Dezelah ,  Jan Willem Maes ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore ,  Giuseppe Alessio Verni ,  Qi Xie ,  Ren-Jie Chang ,  Eric James Shero

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/455

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20220205083A1

公开(公告)日：2022-06-30

申请号：US17562114

申请日：2021-12-27

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Craig Wheaton ,  Qi Xie

IPC: C23C16/18 ,  C23C16/54

Abstract: The current disclosure relates to a composition for depositing group 13 metal-containing material on a substrate. The composition comprises a metal alkyl precursor, wherein the metal alkyl precursor comprises a group 13 metal atom and two different alkyl ligand types. The first ligand type is a branched C4 to C8 alkyl bonded to the group 13 metal atom through a carbon atom that is bonded to three carbon atoms, and the second ligand type is a linear C1 to C4 alkyl. The group 13 metal atom is bonded to two ligands of the first ligand type, and the ratio of first ligand type to second ligand type in the composition is about two to one. Further, the disclosure relates to methods of manufacture of compositions and their uses, as well as methods of depositing material on a substrate.

公开(公告)号：US20220139713A1

公开(公告)日：2022-05-05

申请号：US17511837

申请日：2021-10-27

Applicant: ASM IP Holding B.V.

Inventor： Elina Färm ,  Jan Willem Maes ,  Charles Dezelah ,  Shinya Iwashita

IPC: H01L21/285 ,  C23C16/18 ,  C23C16/455

Abstract: The current disclosure relates to methods of depositing molybdenum on a substrate. The disclosure further relates to a molybdenum layer, to a structure and to a device comprising a molybdenum layer. In the method, molybdenum is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a molybdenum precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form molybdenum on the substrate. The molybdenum precursor comprises a molybdenum atom and a hydrocarbon ligand, and the reactant comprises a hydrocarbon comprising two or more halogen atoms, and at least two halogen atoms are attached to different carbon atoms.

公开(公告)号：US20220127724A1

公开(公告)日：2022-04-28

申请号：US17504839

申请日：2021-10-19

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Eric James Shero ,  Qi Xie ,  Giuseppe Alessio Verni ,  Petro Deminskyi

IPC: C23C16/455 ,  C23C16/52

Abstract: The current disclosure relates to the manufacture of semiconductor devices, specifically to methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate. The disclosure further relates to structures and devices formed by the methods, as well as to a deposition assembly.

公开(公告)号：US20250079182A1

公开(公告)日：2025-03-06

申请号：US18815935

申请日：2024-08-27

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Petro Deminskyi

IPC: H01L21/311 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/67

Abstract: The current disclosure relates to methods of etching a material. The method comprises method of etching material from a first surface of a material. In the method, the substrate having a first surface of a material is provided into a reaction chamber and an etching step is executed. The etching step comprises etching the first material by executing a plurality of etching cycles. Each etching cycle comprises an etching reactant pulse to expose the substrate to an etching reactant and an anneal pulse to expose the substrate to an anneal. The disclosure further relates to methods of forming a semiconductor device and to a semiconductor device. Further, the disclosure relates to a semiconductor processing system.