Patent search ap:("ASM IP Holding B.V.") AND inv:"Perttu Sippola" Page 2

11.

发明授权
Methods for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition process in a reaction chamber 有权

公开(公告)号：US11227763B2

公开(公告)日：2022-01-18

申请号：US16790780

申请日：2020-02-14

Applicant: ASM IP Holding B.V.

Inventor： Tatiana Ivanova , Perttu Sippola , Michael Eugene Givens

IPC: H01L21/02 , H01L29/51 , H01L21/28

Abstract: A method for depositing a hafnium lanthanum oxide film on a substrate by a cyclical deposition in a reaction chamber is disclosed. The method may include: depositing a hafnium oxide film on the substrate utilizing a first sub-cycle of the cyclical deposition process and depositing a lanthanum oxide film utilizing a second sub-cycle of the cyclical deposition process.

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