公开(公告)号：US20220359215A1

公开(公告)日：2022-11-10

申请号：US17724337

申请日：2022-04-19

Applicant: ASM IP Holding B.V.

Inventor： René Henricus Jozef Vervuurt ,  Takayoshi Tsutsumi ,  Masaru Hori ,  Nobuyoshi Kobayashi ,  Yoshinori Oda ,  Charles Dezelah

IPC: H01L21/3065 ,  H01L21/02 ,  C23C16/455

Abstract: The current disclosure relates to processes for selectively etching material from one surface of a semiconductor substrate over another surface of the semiconductor substrate. The disclosure further relates to assemblies for etching material from a surface of a semiconductor substrate. In the processes, a substrate comprising a first surface and a second surface is provided into a reaction chamber, an etch-priming reactant is provided into the reaction chamber in vapor phase; reactive species generated from plasma are provided into the reaction chamber for selectively etching material from the first surface. The etch-priming reactant is deposited on the first surface and the etch-priming reactant comprises a halogenated hydrocarbon. The halogenated hydrocarbon may comprise a head group and a tail group, and one or both of them may be halogenated.

公开(公告)号：US20210287912A1

公开(公告)日：2021-09-16

申请号：US17192865

申请日：2021-03-04

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Yoshinori Ota ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi

IPC: H01L21/311 ,  H01L21/02

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.

公开(公告)号：US20250014908A1

公开(公告)日：2025-01-09

申请号：US18348602

申请日：2023-07-07

Applicant: ASM IP Holding, B.V.

Inventor： Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Shaoren Deng

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/027 ,  H01L21/768

Abstract: Disclosed are methods and related systems for topography-selective depositions. Embodiments of presently described methods comprise employing a sacrificial gap filling fluid for selectively forming a material on a distal surface of a gap, and not on at least one of sidewalls of the gap and proximal surfaces. Further described are methods for filling a gap with a high quality material by means of a sacrificial gap filling fluid.

公开(公告)号：US12104244B2

公开(公告)日：2024-10-01

申请号：US17953769

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Viljami Pore

IPC: C23C16/04 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/285

CPC classification number: C23C16/045 ,  C23C16/08 ,  C23C16/513 ,  C23C16/56 ,  H01L21/28556

Abstract: Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

公开(公告)号：US20240102156A1

公开(公告)日：2024-03-28

申请号：US18462938

申请日：2023-09-07

Applicant: ASM IP Holding, B.V.

Inventor： René Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/04 ,  C23C16/32 ,  C23C16/34

CPC classification number: C23C16/045 ,  C23C16/325 ,  C23C16/342

Abstract: Methods and systems for mixing precursors are disclosed. Systems and methods disclosed herein comprise mixing a first precursor and a second precursor in a mixing chamber. The first precursor and the second precursor can be provided to the mixing chamber in the gas phase or as liquids.

公开(公告)号：US20230307239A1

公开(公告)日：2023-09-28

申请号：US18190542

申请日：2023-03-27

Applicant: ASM IP Holding, B.V.

Inventor： Sean T. Barry ,  Goran Bacic ,  Charles Dezelah ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Peter Gordon

IPC: H01L21/285 ,  C23C16/455

CPC classification number: H01L21/28556 ,  C23C16/45527 ,  C23C16/45553

Abstract: The current disclosure relates to vapor phase methods of depositing a metal or a semimetal-comprising materials on a substrate. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal-comprising material on the substrate. The disclosure further relates to materials and structures deposited by the disclosed methods, as well as deposition assemblies.

公开(公告)号：US20230115806A1

公开(公告)日：2023-04-13

申请号：US17953502

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Jihee Jeon

IPC: H01L21/768 ,  H01L21/02

Abstract: A method and system for forming material within a gap on a surface of a substrate are disclosed. An exemplary method includes forming a material layer on a surface of the substrate within a first reaction chamber, exposing the material layer to a halogen reactant in a second reaction chamber to thereby form a flowable layer comprising a halogen within the gap, and optionally exposing the flowable layer to a converting reactant in a third reaction chamber to form a converted material within the gap. Exemplary methods can further include a step of heat treating the flowable layer or the converted material. Exemplary systems can perform the method.

公开(公告)号：US20230101229A1

公开(公告)日：2023-03-30

申请号：US17953585

申请日：2022-09-27

Applicant: ASM IP Holding B.V.

Inventor： Hannu Huotari ,  Viljami Pore ,  Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Charles Dezelah ,  Giuseppe Alessio Verni ,  Ren-Jie Chang ,  Michael Givens ,  Eric James Shero

IPC: H01L21/768 ,  H01L21/67 ,  H01L21/02

Abstract: A multiple-layer method for forming material within a gap on a surface of a substrate is disclosed. An exemplary method includes forming a layer of first material overlying the substrate and forming a layer of second (e.g., initially flowable) material within a region of the first material to thereby at least partially fill the gap with material in a seamless and/or void less manner.

公开(公告)号：US20220375744A1

公开(公告)日：2022-11-24

申请号：US17747197

申请日：2022-05-18

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Takayoshi Tsutsumi ,  Masaru Hori

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/455 ,  C23C16/40

Abstract: Methods and related systems for topographically depositing a material on a substrate are disclosed. The substrate comprises a proximal surface and a gap feature. The gap feature comprises a sidewall and a distal surface. Exemplary methods comprise, in the given order: a step of positioning the substrate on a substrate support in a reaction chamber; a step of subjecting the substrate to a plasma pre-treatment; and, a step of selectively depositing a material on at least one of the proximal surface and the distal surface with respect to the sidewall. The step of subjecting the substrate to a plasma pre-treatment comprises exposing the substrate to at least one of fluorine-containing molecules, ions, and radicals.

公开(公告)号：US12266540B2

公开(公告)日：2025-04-01

申请号：US18530759

申请日：2023-12-06

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba ,  Yoshinori Ota ,  René Henricus Jozef Vervuurt ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi

IPC: H01L21/311 ,  H01L21/02

Abstract: A method for fabricating a layer structure having a target topology profile in a step which has a side face and a lateral face, includes processes of: (a) depositing a dielectric layer on a preselected area of the substrate under first deposition conditions, wherein the dielectric layer has a portion whose resistance to fluorine and/or chlorine radicals under first dry-etching conditions is tuned; and (b) exposing the dielectric layer obtained in process (a) to the fluorine and/or chlorine radicals under the first dry-etching conditions, thereby removing at least a part of the portion of the dielectric layer, thereby forming a layer structure having the target topology profile on the substrate.