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公开(公告)号：US20180173111A1
公开(公告)日：2018-06-21
申请号：US15833130
申请日：2017-12-06
Applicant: ASML Netherlands B.V.
Inventor： Nitesh Pandey , Armand Eugene Albert Koolen
Abstract: Metrology apparatus and methods for measuring a structure formed on a substrate by a lithographic process are disclosed. In one arrangement an optical system illuminates the structure with radiation and detects radiation scattered by the structure. The optical system comprises a first dispersive element. The first dispersive element spectrally disperses scattered radiation exclusively from a first portion of a pupil plane field distribution along a first dispersion direction. A second dispersive element, separated from the first dispersive element, spectrally disperses scattered radiation exclusively from a second portion of the pupil plane field distribution, different from the first portion of the pupil plane field distribution, along a second dispersion direction.
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公开(公告)号：US20180073866A1
公开(公告)日：2018-03-15
申请号：US15683010
申请日：2017-08-22
Applicant: ASML Netherlands B.V.
Abstract: Disclosed is a method of determining a characteristic of a target on a substrate and corresponding metrology apparatus and computer program. The method comprises determining a plurality of intensity asymmetry measurements from pairs of complementary pixels comprising a first image pixel in a first image of the target and a second image pixel in a second image of the target. The first image is obtained from first radiation scattered by the target and the second image is obtained from second radiation scattered by the target, the first radiation and second radiation comprising complementary non-zero diffraction orders. The characteristic of the target is then determined from said plurality of intensity asymmetry measurements.
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13.发明授权公开(公告)号：US09811003B2
公开(公告)日：2017-11-07
申请号：US15355334
申请日：2016-11-18
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/70625 , G03F7/70483 , G03F7/70633 , G03F7/70683
Abstract: A metrology target formed by a lithographic process on a substrate includes a plurality of component gratings. Images of the target are formed using +1 and −1 orders of radiation diffracted by the component gratings. Regions of interest (ROIs) in the detected image are identified corresponding the component gratings. Intensity values within each ROI are processed and compared between images, to obtain a measurement of asymmetry and hence overlay error. Separation zones are formed between the component gratings and design so as to provide dark regions in the image. In an embodiment, the ROIs are selected with their boundaries falling within the image regions corresponding to the separation zones. By this measure, the asymmetry measurement is made more tolerant of variations in the position of the ROI. The dark regions also assist in recognition of the target in the images.
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公开(公告)号：US11150563B2
公开(公告)日：2021-10-19
申请号：US16708509
申请日：2019-12-10
Applicant: ASML NETHERLANDS B.V.
Inventor： Sergei Sokolov , Sergey Tarabrin , Su-Ting Cheng , Armand Eugene Albert Koolen , Markus Franciscus Antonius Eurlings , Koenraad Remi André Maria Schreel
IPC: G03F7/20
Abstract: A technique of measuring a parameter of a patterning process is disclosed. In one arrangement, a target, formed by the patterning process, is illuminated. A sub-order diffraction component of radiation scattered from the target is detected and used to determine the parameter of the patterning process.
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公开(公告)号：US10852247B2
公开(公告)日：2020-12-01
申请号：US15664808
申请日：2017-07-31
Applicant: ASML HOLDING N.V. , ASML NETHERLANDS B.V.
Inventor： Stanislav Smirnov , Johannes Matheus Marie De Wit , Teunis Willem Tukker , Armand Eugene Albert Koolen
Abstract: An optical inspection apparatus, including: an optical metrology tool configured to measure structures, the optical metrology tool including: an electromagnetic (EM) radiation source configured to direct a beam of EM radiation along an EM radiation path; and an adaptive optical system disposed in a portion of the EM radiation path and configured to adjust a shape of a wave front of the beam of EM radiation, the adaptive optical system including: a first aspherical optical element; a second aspherical optical element adjacent the first aspherical optical element; and an actuator configured to cause relative movement between the first optical element and the second optical element in a direction different from a beam axis of the portion of the EM radiation path.
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Patent Agency Ranking
16.发明授权公开(公告)号：US10816909B2
公开(公告)日：2020-10-27
申请号：US16150879
申请日：2018-10-03
Applicant: ASML Netherlands B.V.
Inventor： Patricius Aloysius Jacobus Tinnemans , Arie Jeffrey Den Boef , Armand Eugene Albert Koolen , Nitesh Pandey , Vasco Tomas Tenner , Willem Marie Julia Marcel Coene , Patrick Warnaar
Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.
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公开(公告)号：US10599048B2
公开(公告)日：2020-03-24
申请号：US16169514
申请日：2018-10-24
Applicant: ASML Netherlands B.V.
Inventor： Sergey Tarabrin , Armand Eugene Albert Koolen
Abstract: Metrology apparatus and methods are disclosed for measuring a structure formed on a substrate. In one arrangement, different components of a radiation beam are selectively extracted after reflection from the structure and independently detected. For each component, radiation is selected from one of a plurality of predetermined regions in a downstream pupil plane of the optical system downstream from the structure. Radiation is further selected from one of two predetermined orthogonal polarization states. The predetermined orthogonal polarization states are oriented differently as a pair for each of at least a subset of components comprising radiation selected from different predetermined regions in the downstream pupil plane.
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公开(公告)号：US20190129315A1
公开(公告)日：2019-05-02
申请号：US16169514
申请日：2018-10-24
Applicant: ASML Netherlands B.V.
Inventor： Sergey Tarabrin , Armand Eugene Albert Koolen
Abstract: Metrology apparatus and methods are disclosed for measuring a structure formed on a substrate. In one arrangement, different components of a radiation beam are selectively extracted after reflection from the structure and independently detected. For each component, radiation is selected from one of a plurality of predetermined regions in a downstream pupil plane of the optical system downstream from the structure. Radiation is further selected from one of two predetermined orthogonal polarization states. The predetermined orthogonal polarization states are oriented differently as a pair for each of at least a subset of components comprising radiation selected from different predetermined regions in the downstream pupil plane.
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公开(公告)号：US10191391B2
公开(公告)日：2019-01-29
申请号：US15279860
申请日：2016-09-29
Applicant: ASML Netherlands B.V.
Inventor： Nitesh Pandey , Zili Zhou , Armand Eugene Albert Koolen , Gerbrand Van Der Zouw
Abstract: Disclosed is a metrology apparatus for measuring a parameter of a lithographic process, and associated computer program and method. The metrology apparatus comprises an optical system for measuring a target on a substrate by illuminating the target with measurement radiation and detecting the measurement radiation scattered by the target; and an array of lenses. Each lens of the array is operable to focus the scattered measurement radiation onto a sensor, said array of lenses thereby forming an image on the sensor which comprises a plurality of sub-images, each sub-image being formed by a corresponding lens of the array of lenses. The resulting plenoptic image comprises image plane information from the sub-images, wavefront distortion information (from the relative positions of the sub-images) and pupil information from the relative intensities of the sub-images.
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公开(公告)号：US20180348645A1
公开(公告)日：2018-12-06
申请号：US15988677
申请日：2018-05-24
Applicant: ASML Netherlands B.V.
Inventor： Janneke Ravensbergen , Nitesh Pandey , Zili Zhou , Armand Eugene Albert Koolen , Sebastianus Adrianus Goorden , Bastiaan Onne Fagginger Auer , Simon Gijsbert Josephus Mathijssen
CPC classification number: G03F7/7055 , G01B11/272 , G01N21/4788 , G01N21/9501 , G01N21/95623 , G03F7/70625 , G03F7/70633
Abstract: A metrology apparatus is disclosed that measures a structure formed on a substrate to determine a parameter of interest. The apparatus comprises an optical system configured to focus radiation onto the structure and direct radiation after reflection from the structure onto a detector, wherein: the optical system is configured such that the detector detects a radiation intensity resulting from interference between radiation from at least two different points in a pupil plane field distribution, wherein the interference is such that a component of the detected radiation intensity containing information about the parameter of interest is enhanced relative to one or more other components of the detected radiation intensity.
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