公开(公告)号：US20150124234A1

公开(公告)日：2015-05-07

申请号：US14390973

申请日：2013-03-19

Applicant: ASML Netherlands B.V.

Inventor： Raymond Wilhelmus Louis Lafarre ,  Nina Vladimirovna Dziomkina ,  Yogesh Pramod Karade ,  Elisabeth Corinne Rodenburg ,  Harmeet Singh

IPC: G03F7/20

CPC classification number: G03F7/70733 ,  G03F7/70341 ,  G03F7/70708 ,  H01L21/6831 ,  H01L21/6875

Abstract: A substrate holder for use in a lithographic apparatus, the substrate holder including: a main body having a surface; a plurality of burls projecting from the surface and having end surfaces to support a substrate; and a thin film stack on the main body surface and forming an electric component, the thin film stack having a conductive layer configured to distribute electrical charge substantially uniformly throughout a plane of the stack in which the conductive layer is positioned.

Abstract translation: 一种用于光刻设备的衬底保持器，所述衬底保持器包括：具有表面的主体; 从表面突出并具有用于支撑基板的端面的多个毛刺; 以及在所述主体表面上的薄膜堆叠并形成电气部件，所述薄膜叠层具有导电层，所述导电层被配置为基本上均匀地分布电荷，所述导电层在导电层所位于的堆叠的整个平面内。

公开(公告)号：US20150050599A1

公开(公告)日：2015-02-19

申请号：US14387186

申请日：2013-03-19

Applicant: ASML Netherlands B.V.

Inventor： Sander Frederik Wuister ,  Vadim Yevgenyevich Banine ,  Jozef Maria Finders ,  Roelof Koole ,  Emiel Peeters ,  Harmeet Singh

IPC: G03F7/26 ,  B05D1/32 ,  B05D3/10 ,  G03F7/20

CPC classification number: G03F7/26 ,  B05D1/32 ,  B05D3/107 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/20 ,  G03F7/2022

Abstract: A method is disclosed to form a patterned epitaxy template, on a substrate, to direct self-assembly of block copolymer for device lithography. A resist layer on a substrate is selectively exposed with actinic (e.g. UV or DUV) radiation by photolithography to provide exposed portions in a regular lattice pattern of touching or overlapping shapes arranged to leave unexposed resist portions between the shapes. Exposed or unexposed resist is removed with remaining resist portions providing the basis for a patterned epitaxy template for the orientation of the self-assemblable block copolymer as a hexagonal or square array. The method allows for simple, direct UV lithography to form patterned epitaxy templates with sub-resolution features.

Abstract translation: 公开了一种在衬底上形成图案化外延模板以引导用于器件光刻的嵌段共聚物的自组装的方法。 基板上的抗蚀剂层通过光刻法选择性地用光化（例如UV或DUV）曝光，以提供布置成在形状之间留下未曝光的抗蚀剂部分的接触或重叠形状的规则格子图案的暴露部分。 用剩余的抗蚀剂部分除去曝光或未曝光的抗蚀剂，为用于可自组装嵌段共聚物取向的图案化外延模板提供六边形或正方形阵列的基础。 该方法允许简单的直接UV光刻形成具有亚分辨率特征的图案化外延模板。