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    Metrology method, computer product and system
    12.
    发明授权
    Metrology method, computer product and system 有权

    公开(公告)号：US10527949B2

    公开(公告)日：2020-01-07

    申请号：US14948001

    申请日：2015-11-20

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya

    IPC: G03F7/20 ,  G01B11/24 ,  G01B11/27

    Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.

    Determination of stack difference and correction using stack difference
    15.
    发明授权
    Determination of stack difference and correction using stack difference 有权

    公开(公告)号：US10345709B2

    公开(公告)日：2019-07-09

    申请号：US16127296

    申请日：2018-09-11

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya

    IPC: G03F7/20 ,  G01N21/47 ,  G01N21/956

    Abstract: A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

    Asymmetry monitoring of a structure
    16.
    发明授权
    Asymmetry monitoring of a structure 有权

    公开(公告)号：US10268124B2

    公开(公告)日：2019-04-23

    申请号：US15913920

    申请日：2018-03-07

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Arie Jeffrey Den Boef

    IPC: G03B27/32 ,  G03F7/20 ,  G01B11/26 ,  G01N21/95

    Abstract: A method including obtaining a first value of an optical characteristic determined for an etched profile of a substrate measured at a first wavelength of measurement radiation, obtaining a second value of the optical characteristic determined for the etched profile of the substrate measured at a second wavelength of measurement radiation, and obtaining a derived value that represents a difference between the first and second values; and determining, based on the first and second values or on the derived value, an occurrence of a tilt in the etching to form the etched profile.

    Metrology method, target and substrate
    17.
    发明授权
    Metrology method, target and substrate 有权

    公开(公告)号：US10254658B2

    公开(公告)日：2019-04-09

    申请号：US15274273

    申请日：2016-09-23

    Applicant: ASML Netherlands B.V.

    Inventor： Daan Maurits Slotboom ,  Arie Jeffrey Den Boef ,  Martin Ebert

    IPC: G03F7/20

    Abstract: A method of measuring a parameter of a lithographic process, the method including: illuminating a diffraction measurement target on a substrate with radiation, the measurement target including at least a first sub-target, at least a second sub-target and at least third sub-target, wherein the first, second and third sub-targets each include a periodic structure and wherein the first sub-target, second sub-target and third sub-target each have a different design and wherein at least two of the sub-targets are respectively designed for determination of a different lithographic process parameter; and detecting radiation scattered by the at least two sub-targets to obtain for that target a measurement representing the different parameters of the lithographic process.

    Metrology methods, metrology apparatus and device manufacturing method
    20.
    发明授权
    Metrology methods, metrology apparatus and device manufacturing method 有权

    公开(公告)号：US10101671B2

    公开(公告)日：2018-10-16

    申请号：US15388601

    申请日：2016-12-22

    Applicant: ASML Netherlands B.V.

    Inventor： Richard Quintanilha ,  Arie Jeffrey Den Boef

    IPC: G03F7/20 ,  H05G2/00 ,  G01N21/956 ,  G01N21/88

    Abstract: Hybrid metrology apparatus (1000, 1100, 1200, 1300, 1400) measures a structure (T) manufactured by lithography. An EUV metrology apparatus (244, IL1/DET1) irradiates the structure with EUV radiation and detects a first spectrum from the structure. Another metrology apparatus (240, IL2/DET2) irradiates the structure with second radiation comprising EUV radiation or longer-wavelength radiation and detects a second spectrum. Using the detected first spectrum and the detected second spectrum together, a processor (MPU) determines a property (CD/OV) of the structure. The spectra can be combined in various ways. For example, the first detected spectrum can be used to control one or more parameters of illumination and/or detection used to capture the second spectrum, or vice versa. The first spectrum can be used to distinguish properties of different layers (T1, T2) in the structure. First and second radiation sources (SRC1, SRC2) may share a common drive laser (LAS).

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