公开(公告)号：US11239061B2

公开(公告)日：2022-02-01

申请号：US15581446

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Saravjeet Singh ,  Alan Tso ,  Jingchun Zhang ,  Zihui Li ,  Hanshen Zhang ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/67

Abstract: A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.

公开(公告)号：US10903054B2

公开(公告)日：2021-01-26

申请号：US15847411

申请日：2017-12-19

Applicant: Applied Materials, Inc.

Inventor： Saravjeet Singh ,  Kenneth D. Schatz ,  Alan Tso ,  Marlin Wijekoon ,  Dimitri Kioussis

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311

Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.

公开(公告)号：US20160148821A1

公开(公告)日：2016-05-26

申请号：US14554250

申请日：2014-11-26

Applicant: Applied Materials, Inc.

Inventor： Saravjeet Singh ,  Alan Tso ,  Jingchun Zhang ,  Zihui Li ,  Hanshen Zhang ,  Dmitry Lubomirsky

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32724 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32715 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069

Abstract: A semiconductor processing chamber may include a remote plasma region, and a processing region fluidly coupled with the remote plasma region. The processing region may be configured to house a substrate on a support pedestal. The support pedestal may include a first material at an interior region of the pedestal. The support pedestal may also include an annular member coupled with a distal portion of the pedestal or at an exterior region of the pedestal. The annular member may include a second material different from the first material.

Abstract translation: 半导体处理室可以包括远程等离子体区域和与远程等离子体区域流体耦合的处理区域。 处理区域可以被配置为将基板容纳在支撑基座上。 支撑基座可以包括在基座的内部区域处的第一材料。 支撑基座还可以包括与基座的远侧部分或基座的外部区域联接的环形构件。 环形构件可以包括不同于第一材料的第二材料。