公开(公告)号：US20240290573A1

公开(公告)日：2024-08-29

申请号：US18574091

申请日：2022-06-24

Applicant: Danmarks Tekniske Universitet

Inventor： Murat Nulati YESIBOLATI ,  Kristian MØLHAVE

IPC: H01J37/20 ,  H01J37/26

CPC classification number: H01J37/20 ,  H01J37/26 ,  H01J2237/2001 ,  H01J2237/2002

Abstract: The present invention relates to a liquid phase transmission electron microscopy (LP-TEM) holder with integrated temperature regulation for operating with an associated transmission electron microscopy instrument providing an electron beam for imaging, the LP-TEM holder comprising a liquid phase sample receptacle (LPSR, 5) which may be made from two or more layers of materials. e.g. microchips, the LPSR providing a liquid compartment. The LP-TEM holder furthermore comprises an integrated temperature regulating unit (15), capable of regulating the temperature of the LPSR and liquid in the liquid compartment by means of a temperature measuring unit (16) capable of measuring a temperature in the liquid compartment. The LPSR is thermally isolated with a thermal isolating portion (30), with respect to an external environment and associated devices. The invention is particularly advantageous for providing fast temperature regulation and accurate steady state temperatures of one or more fluids to be imaged.

公开(公告)号：US20240177963A1

公开(公告)日：2024-05-30

申请号：US18507857

申请日：2023-11-13

Applicant: Hitachi-High-Tech Corporation

Inventor： Yuki UCHIOKE ,  Masaru Matsushima ,  Masaki Mizuochi ,  Go Miya ,  Katsumi Kambe

IPC: H01J37/20 ,  H01J37/22

CPC classification number: H01J37/20 ,  H01J37/222 ,  H01J2237/2001 ,  H01J2237/20214 ,  H01J2237/221

Abstract: To provide a technique of the above charged particle beam apparatus, a technique that can prevent the lowering of apparatus performance due to the influence of vibration and noise by an air blower (fan). The charged particle beam apparatus includes a body device that is provided in a body cover, a plurality of air blowers that are provided on the body cover, and a controller that controls the plurality of air blowers. The body device has a stage on which a sample is placed, and a microscope that images the sample. The controller obtains an image obtained by imaging the sample by the microscope, obtains vibration information from the image, compares the vibration information and a specification value, and on the basis of the result of the comparison, controls the numbers of rotations of the plurality of air blowers. The controller decreases the number of rotations of at least one first air blower among the plurality of air blowers, and increases the number of rotations of at least one different second air blower among the plurality of air blowers.

公开(公告)号：US11996262B2

公开(公告)日：2024-05-28

申请号：US17179165

申请日：2021-02-18

Applicant: ASML Netherlands B.V.

Inventor： Marcus Adrianus Van De Kerkhof ,  Jing Zhang ,  Martijn Petrus Christianus Van Heumen ,  Patriek Adrianus Alphonsus Maria Bruurs ,  Erheng Wang ,  Vineet Sharma ,  Makfir Sefa ,  Shao-Wei Fu ,  Simone Maria Scolari ,  Johannes Andreas Henricus Maria Jacobs

IPC: H01J37/20 ,  F16L11/04 ,  F16L11/12 ,  B01D19/00 ,  H01L21/67

CPC classification number: H01J37/20 ,  F16L11/04 ,  F16L11/12 ,  B01D19/0068 ,  H01J2237/2001 ,  H01L21/67288

Abstract: Apparatuses, systems, and methods for transferring fluid to a stage in a charged particle beam system are disclosed. In some embodiments, a stage may be configured to secure a wafer, a chamber may be configured to house the stage; and a tube may be provided within the chamber to transfer fluid between the stage and outside of the chamber. The tube may include a first tubular layer of first material, wherein the first material is a flexible polymer; and a second tubular layer of second material, wherein the second material is configured to reduce permeation of fluid or gas through the tube. In some embodiments, a system may include a degasser system outside of the chamber, where the degasser system may be configured to remove gases from the transfer fluid before the transfer fluid enters the tube.

公开(公告)号：US11994663B2

公开(公告)日：2024-05-28

申请号：US16960287

申请日：2019-01-07

Applicant: HENNYZ B.V.

Inventor： Hendrik Willem Zandbergen

IPC: G02B21/32 ,  H01J37/20

CPC classification number: G02B21/32 ,  H01J37/20 ,  H01J2237/2001 ,  H01J2237/2004 ,  H01J2237/204 ,  H01J2237/2802

Abstract: The present invention is in the field of a vacuum transfer assembly, such as for cryotransfer, and specifically a TEM vacuum transfer assembly, which can be used in microscopy, a sample holder, a vacuum housing, a sample holder stage and a sample holder coupling unit for use in the assembly, and a microscope comprising said assembly as well as a method of vacuum transfer into a microscope.

公开(公告)号：US11915951B2

公开(公告)日：2024-02-27

申请号：US16913010

申请日：2020-06-26

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Hiroyuki Kobayashi ,  Nobuya Miyoshi ,  Kazunori Shinoda ,  Tatehito Usui ,  Naoyuki Kofuji ,  Yutaka Kouzuma ,  Tomoyuki Watanabe ,  Kenetsu Yokogawa ,  Satoshi Sakai ,  Masaru Izawa

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/48 ,  H01L21/66

CPC classification number: H01L21/67248 ,  C23C16/482 ,  H01J37/3299 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/67069 ,  H01L21/67098 ,  H01L21/67115 ,  H01L21/67207 ,  H01L22/12 ,  H01L22/20 ,  H01J2237/2001 ,  H01J2237/24585 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

公开(公告)号：US20230411147A1

公开(公告)日：2023-12-21

申请号：US18334058

申请日：2023-06-13

Applicant: ASM IP Holding, B.V.

Inventor： Jihee Jeon ,  Timothee Blanquart ,  Viljami Pore ,  Charles Dezelah

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/0228 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02214 ,  H01J37/32357 ,  C23C16/401 ,  C23C16/4554 ,  C23C16/45553 ,  H01J2237/332 ,  H01J2237/2001

Abstract: Disclosed are methods and systems for forming a silicon-containing layer on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a silicon precursor pulse that comprises exposing the substrate to a silicon precursor. The silicon precursor comprises silicon and one or more of a group 13 element and a group 15 element. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

公开(公告)号：US20230360924A1

公开(公告)日：2023-11-09

申请号：US17737311

申请日：2022-05-05

Applicant: Applied Materials, Inc.

Inventor： Supriya Ghosh ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Shuchi Sunil Ojha ,  Praket Prakash Jha ,  Rui Cheng

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/32844 ,  H01J37/32522 ,  H01J37/32449 ,  H01L21/02115 ,  H01J2237/332 ,  H01J2237/2001 ,  H01J2237/182 ,  H01J2237/334

Abstract: Exemplary methods of semiconductor processing may include providing a carbon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The substrate may define one or more features along the substrate. The methods may include forming a plasma of the carbon-containing precursor within the processing region. The methods may include depositing a carbon-containing material on the substrate. The carbon-containing material may extend within the one or more features along the substrate. The methods may include forming a plasma of a hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include treating the carbon-containing material with plasma effluents of the hydrogen-containing precursor. The plasma effluents of the hydrogen-containing precursor may cause a portion of the carbon-containing material to be removed from the substrate.

公开(公告)号：US11721558B2

公开(公告)日：2023-08-08

申请号：US17457909

申请日：2021-12-06

Applicant: Lam Research Corporation

Inventor： Keren Jacobs Kanarik

IPC: H01L21/321 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/306 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/32136 ,  H01J37/32715 ,  H01J37/32724 ,  H01L21/0228 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32138 ,  H01L21/67063 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67207 ,  H01L21/67259 ,  H01L21/6831 ,  H01J2237/2001 ,  H01J2237/3341

Abstract: Methods for evaluating synergy of modification and removal operations for a wide variety of materials to determine process conditions for self-limiting etching by atomic layer etching are provided herein. Methods include determining the surface binding energy of the material, selecting a modification gas for the material where process conditions for modifying a surface of the material generate energy less than the modification energy and greater than the desorption energy, selecting a removal gas where process conditions for removing the modified surface generate energy greater than the desorption energy to remove the modified surface but less than the surface binding energy of the material to prevent sputtering, and calculating synergy to maximize the process window for atomic layer etching.

公开(公告)号：US11676794B2

公开(公告)日：2023-06-13

申请号：US17394553

申请日：2021-08-05

Applicant: UNITED KINGDOM RESEARCH AND INNOVATION

Inventor： Lin Wang

IPC: H01J37/26 ,  G02B27/58 ,  G02B1/04 ,  G01N21/64 ,  G02B21/33

CPC classification number: H01J37/261 ,  G02B1/041 ,  G02B27/58 ,  G01N21/6458 ,  G01N2021/6478 ,  G02B21/33 ,  H01J2237/2001 ,  H01J2237/2801 ,  H01J2237/2802 ,  H01J2237/2803

Abstract: We describe a super-resolution optical microscopy technique in which a sample is located on or adjacent to the planar surface of an aplanatic solid immersion lens and placed in a cryogenic environment.

公开(公告)号：US20190180974A1

公开(公告)日：2019-06-13

申请号：US16210567

申请日：2018-12-05

Applicant: FEI Company

Inventor： Hervé-William Rémigy

IPC: H01J37/18 ,  G01N1/42 ,  F25B19/00 ,  H01J37/20 ,  H01J37/244 ,  H01J37/22 ,  H01J37/26

CPC classification number: H01J37/18 ,  F25B19/005 ,  G01N1/42 ,  H01J37/20 ,  H01J37/226 ,  H01J37/244 ,  H01J37/261 ,  H01J2237/2001 ,  H01J2237/202

Abstract: A method of preparing a cryogenic sample (e.g. for study in a charged-particle microscope), whereby the sample is subjected to rapid cooling using a cryogen, comprising the following steps: Providing two conduits for transporting cryogenic fluid, each of which conduits opens out into a mouthpiece, which mouthpieces are arranged to face each other across an intervening gap; Placing the sample in said gap; Pumping cryogenic fluid through said conduits so as to concurrently flush from said mouthpieces, thereby suddenly immersing the sample in cryogenic fluid from two opposite sides, wherein the flush of cryogenic fluid applied from a first of said mouthpieces is different—e.g. has a different duration—to that applied from the second of said mouthpieces.