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公开(公告)号：US10283345B2
公开(公告)日：2019-05-07
申请号：US15280161
申请日：2016-09-29
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiangjin Xie , Feng Q. Liu , Daping Yao , Alexander Jansen , Joung Joo Lee , Adolph Miller Allen , Xianmin Tang , Mei Chang
IPC: B08B7/00 , H01L21/02 , H01L21/768 , B08B5/00 , B08B9/027 , B08B3/00 , B08B9/00 , B08B3/10 , C23G1/24 , F01D5/00
Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol to reduce a contaminated surface of the conductive material.
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公开(公告)号：US11891690B2
公开(公告)日：2024-02-06
申请号：US16990303
申请日：2020-08-11
Applicant: Applied Materials, Inc.
Inventor： Feng Q. Liu , Alexander Jansen , Mark Saly
IPC: C23C16/18 , C23C16/455 , H01L21/285 , H01L21/02
CPC classification number: C23C16/18 , C23C16/45527 , C23C16/45553 , H01L21/0234 , H01L21/02175 , H01L21/02205 , H01L21/28568
Abstract: A method of forming a molybdenum film by oxidation and reduction is disclosed. A molybdenum oxide film is formed by CVD or ALD using a halide free organometallic molybdenum precursor. The molybdenum oxide film contains low amounts of carbon impurities. The molybdenum oxide film is reduced to form a highly pure molybdenum film. The molybdenum film has low resistance and properties similar to bulk molybdenum.
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Patent Agency Ranking
公开(公告)号：US11756784B2
公开(公告)日：2023-09-12
申请号：US17857361
申请日：2022-07-05
Applicant: APPLIED MATERIALS, INC.
Inventor： Carmen Leal Cervantes , Alexander Jansen , Xiangjin Xie
IPC: H01L21/02
CPC classification number: H01L21/02043
Abstract: A method of cleaning a surface of a substrate uses alcohol and water treatments. The method may include applying an alcohol treatment on a surface of the substrate with the alcohol treatment configured to provide surface reduction and applying a water treatment to the surface of the substrate with the water treatment configured to enhance selectivity of at least a portion of the surface for a subsequent barrier layer process by removing alcohol from the at least a portion of the surface. The water treatment may be performed simultaneously with the alcohol treatment or performed after the alcohol treatment. The water treatment may include vaporized water or water injected into a plasma to produce hydrogen or oxygen radicals.
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公开(公告)号：US11056325B2
公开(公告)日：2021-07-06
申请号：US16215769
申请日：2018-12-11
Applicant: APPLIED MATERIALS, INC.
Inventor： Thanh X. Nguyen , Alexander Jansen , Yana Cheng , Randal Schmieding , Yong Cao , Xianmin Tang , William Johanson
Abstract: A movable substrate support with a top surface for holding a substrate, when present, is used in conjunction with a cover ring that is stationary to adjust for a shadow effect to control substrate edge uniformity during deposition processes. The cover ring is held stationary by an electrically isolated spacer that engages with a grounded shield in the process volume of a semiconductor process chamber. A controller adjusts the substrate support in response to deposition material on a top surface of the cover ring to maintain the shadow effect and substrate edge uniformity.
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公开(公告)号：US20210047726A1
公开(公告)日：2021-02-18
申请号：US16990303
申请日：2020-08-11
Applicant: Applied Materials, Inc.
Inventor： Feng Q. Liu , Alexander Jansen , Mark Saly
IPC: C23C16/18 , H01L21/285 , H01L21/02 , C23C16/455
Abstract: A method of forming a molybdenum film by oxidation and reduction is disclosed. A molybdenum oxide film is formed by CVD or ALD using a halide free organometallic molybdenum precursor. The molybdenum oxide film contains low amounts of carbon impurities. The molybdenum oxide film is reduced to form a highly pure molybdenum film. The molybdenum film has low resistance and properties similar to bulk molybdenum.
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公开(公告)号：US20210017639A1
公开(公告)日：2021-01-21
申请号：US16930794
申请日：2020-07-16
Applicant: Applied Materials, Inc.
Inventor： Alexander Jansen , Keith A. Miller , Prashanth Kothnur , Martin Riker , David Gunther , Emily Schooley
Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.
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公开(公告)号：US09460959B1
公开(公告)日：2016-10-04
申请号：US14958459
申请日：2015-12-03
Applicant: APPLIED MATERIALS, INC.
Inventor： Xiangjin Xie , Feng Q. Liu , Daping Yao , Alexander Jansen , Joung Joo Lee , Adolph Miller Allen , Xianmin Tang , Mei Chang
CPC classification number: H01L21/02068 , B08B3/00 , B08B3/106 , B08B5/00 , B08B7/0035 , B08B9/00 , B08B9/027 , C23G1/24 , F01D5/005 , F05D2230/90 , H01L21/02063 , H01L21/76814
Abstract: Methods for processing a substrate are provided herein. In some embodiments, method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt % of an alcohol to reduce a contaminated surface of the conductive material.
Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，处理衬底的方法包括：将设置在衬底处理室的处理体积内的衬底加热到高达约400摄氏度的温度，其中衬底包括第一表面，相对的第二表面和 开口形成在第一表面中并且朝向相对的第二表面延伸，并且其中第二表面包括设置在第二表面中并与开口对准的导电材料; 以及将基底暴露于包含约80至约100重量％的醇的工艺气体中以减少导电材料的污染表面。
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