公开(公告)号：US11955382B2

公开(公告)日：2024-04-09

申请号：US17110818

申请日：2020-12-03

Applicant: Applied Materials, Inc.

Inventor： Kevin Kashefi ,  Alexander Jansen ,  Mehul Naik ,  He Ren ,  Lu Chen ,  Feng Chen

IPC: H01L21/76 ,  H01L21/67 ,  H01L21/768 ,  H01L21/687

CPC classification number: H01L21/76885 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76829 ,  H01L21/76883 ,  H01L21/68707

Abstract: Methods and apparatus for forming a reverse selective etch stop layer are disclosed. Some embodiments of the disclosure provide interconnects with lower resistance than methods which utilize non-selective (e.g., blanket) etch stop layers. Some embodiments of the disclosure utilize reverse selective etch stop layers within a subtractive etch scheme. Some embodiments of the disclosure selectively deposit the etch stop layer by passivating the surface of the metal material.

公开(公告)号：US12183631B2

公开(公告)日：2024-12-31

申请号：US17839817

申请日：2022-06-14

Applicant: Applied Materials, Inc.

Inventor： Suketu Parikh ,  Alexander Jansen ,  Joung Joo Lee ,  Lequn Liu

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3105 ,  H01L23/532

Abstract: Methods for forming interconnects on a substrate with low resistivity and high dopant interfaces. In some embodiments, a method includes depositing a first copper layer with a dopant with a first dopant content of 0.5 percent to 10 percent in the interconnect by sputtering a first copper-based target at a first temperature of zero degrees Celsius to 200 degrees Celsius, annealing the substrate at a second temperature of 200 degrees Celsius to 400 degrees Celsius to reflow the first copper layer, depositing a second copper layer with the dopant with a second dopant content of zero percent to 0.5 percent by sputtering a second copper-based target at the first temperature of zero degrees Celsius to 200 degrees Celsius, and annealing the substrate at a third temperature of 200 degrees Celsius to 400 degrees Celsius to reflow the second copper layer.

公开(公告)号：US11692262B2

公开(公告)日：2023-07-04

申请号：US16930794

申请日：2020-07-16

Applicant: Applied Materials, Inc.

Inventor： Alexander Jansen ,  Keith A. Miller ,  Prashanth Kothnur ,  Martin Riker ,  David Gunther ,  Emily Schooley

IPC: C23C14/35 ,  C23C14/34

CPC classification number: C23C14/354 ,  C23C14/3407 ,  C23C14/3471

Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

公开(公告)号：US20220341029A1

公开(公告)日：2022-10-27

申请号：US17861969

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Alexander Jansen ,  Keith A. Miller ,  Prashanth Kothnur ,  Martin Riker ,  David Gunther ,  Emily Schooley

IPC: C23C14/35 ,  C23C14/34

Abstract: Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

公开(公告)号：US11939666B2

公开(公告)日：2024-03-26

申请号：US16889017

申请日：2020-06-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin Xie ,  Carmen Leal Cervantes ,  Feng Chen ,  Lu Chen ,  Wenjing Xu ,  Aravind Kamath ,  Cheng-Hsiung Matthew Tsai ,  Tae Hong Ha ,  Alexander Jansen ,  Xianmin Tang

IPC: C23C16/56 ,  C23C14/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: C23C14/564 ,  H01J37/32082 ,  H01L21/02043 ,  H01L21/67017 ,  H01J2237/022

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20250118563A1

公开(公告)日：2025-04-10

申请号：US18377619

申请日：2023-10-06

Applicant: Applied Materials, Inc.

Inventor： Yongjing Lin ,  Zhihui Liu ,  Shih Chung Chen ,  Haoyan Sha ,  Alexander Jansen ,  Zhebo Chen ,  Janardhan Devrajan ,  Tza-Jing Gung

IPC: H01L21/285 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: One or more embodiments of the disclosure are directed to methods of forming structures that are useful for FEOL and BEOL processes. Embodiments of the present disclosure advantageously provide methods of depositing a gapfill material, such as titanium nitride (TiN), in high aspect ratio (AR) structures with small dimensions. Some embodiments advantageously provide seam-free high-quality TiN films to fill high AR trenches with small dimensions. Embodiments of the present disclosure advantageously provide methods of filling 3D structures, such as FinFETs, GAAs, and the like, with a gapfill material without creating a seam. One or more embodiments include selective deposition processes using a carbon (C) layer in order to provide seam-free TiN gapfill in 3D structures, such as GAA devices.

公开(公告)号：US11776805B2

公开(公告)日：2023-10-03

申请号：US17197475

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Yi Xu ,  Yu Lei ,  Xianmin Tang ,  Kelvin Chan ,  Alexander Jansen ,  Philip A. Kraus

IPC: H01L21/02 ,  H01L21/30

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L21/3003

Abstract: Method for selectively oxidizing the dielectric surface of a substrate surface comprising a dielectric surface and a metal surface are discussed. Method for cleaning a substrate surface comprising a dielectric surface and a metal surface are also discussed. The disclosed methods oxidize the dielectric surface and/or clean the substrate surface using a plasma generated from hydrogen gas and oxygen gas. The disclosed method may be performed in a single step without the use of separate competing oxidation and reduction reactions. The disclosed methods may be performed at a constant temperature and/or within a single processing chamber.

公开(公告)号：US11443936B2

公开(公告)日：2022-09-13

申请号：US16906999

申请日：2020-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Carmen Leal Cervantes ,  Alexander Jansen ,  Xiangjin Xie

IPC: H01L21/02

Abstract: A method of cleaning a surface of a substrate uses alcohol and water treatments. The method may include applying an alcohol treatment on a surface of the substrate with the alcohol treatment configured to provide surface reduction and applying a water treatment to the surface of the substrate with the water treatment configured to enhance selectivity of at least a portion of the surface for a subsequent barrier layer process by removing alcohol from the at least a portion of the surface. The water treatment may be performed simultaneously with the alcohol treatment or performed after the alcohol treatment. The water treatment may include vaporized water or water injected into a plasma to produce hydrogen or oxygen radicals.

公开(公告)号：US20220181204A1

公开(公告)日：2022-06-09

申请号：US17110818

申请日：2020-12-03

Applicant: Applied Materials, Inc.

Inventor： Kevin Kashefi ,  Alexander Jansen ,  Mehul Naik ,  He Ren ,  Lu Chen ,  Feng Chen

IPC: H01L21/768 ,  H01L21/67

Abstract: Methods and apparatus for forming a reverse selective etch stop layer are disclosed. Some embodiments of the disclosure provide interconnects with lower resistance than methods which utilize non-selective (e.g., blanket) etch stop layers. Some embodiments of the disclosure utilize reverse selective etch stop layers within a subtractive etch scheme. Some embodiments of the disclosure selectively deposit the etch stop layer by passivating the surface of the metal material.

公开(公告)号：US20210287898A1

公开(公告)日：2021-09-16

申请号：US17197475

申请日：2021-03-10

Applicant: Applied Materials, Inc

Inventor： Bencherki Mebarki ,  Joung Joo Lee ,  Yi Xu ,  Yu Lei ,  Xianmin Tang ,  Kelvin Chan ,  Alexander Jansen ,  Philip A. Kraus

IPC: H01L21/02 ,  H01L21/30

Abstract: Method for selectively oxidizing the dielectric surface of a substrate surface comprising a dielectric surface and a metal surface are discussed. Method for cleaning a substrate surface comprising a dielectric surface and a metal surface are also discussed. The disclosed methods oxidize the dielectric surface and/or clean the substrate surface using a plasma generated from hydrogen gas and oxygen gas. The disclosed method may be performed in a single step without the use of separate competing oxidation and reduction reactions. The disclosed methods may be performed at a constant temperature and/or within a single processing chamber.