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公开(公告)号:US10468276B2
公开(公告)日:2019-11-05
申请号:US15581589
申请日:2017-04-28
Applicant: Applied Materials, Inc.
Inventor: David Benjaminson , Dmitry Lubomirsky
IPC: H02G1/08 , H01L21/67 , H01L21/324 , H01L21/687 , H01L21/66
Abstract: A workpiece holder includes a puck having a cylindrical axis, a radius about the cylindrical axis, and a thickness. At least a top surface of the puck is substantially planar, and the puck defines one or more thermal breaks. Each thermal break is a radial recess that intersects at least one of the top surface and a bottom surface of the cylindrical puck. The radial recess has a thermal break depth that extends through at least half of the puck thickness, and a thermal break radius that is at least one-half of the puck radius. A method of processing a wafer includes processing the wafer with a first process that provides a first center-to-edge process variation, and subsequently, processing the wafer with a second process that provides a second center-to-edge process variation that substantially compensates for the first center-to-edge process variation.
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12.
公开(公告)号:US20190109025A1
公开(公告)日:2019-04-11
申请号:US16209581
申请日:2018-12-04
Applicant: Applied Materials, Inc.
Inventor: David Benjaminson , Dmitry Lubomirsky , Ananda Seelavanth Math , Saravanakumar Natarajan , Shubham Chourey
IPC: H01L21/67 , H01J37/32 , H01L21/687 , H01L21/324
Abstract: A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a workpiece includes flowing a heat exchange fluid through a thermal sink to establish a reference temperature to a puck, raising temperatures of radially inner and outer portions of the puck to first and second temperatures greater than the reference temperature, by activating respective first and second heating devices disposed in thermal communication with the radially inner and outer portions of the puck, and placing the workpiece on the puck.
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公开(公告)号:US20180213608A1
公开(公告)日:2018-07-26
申请号:US15411896
申请日:2017-01-20
Applicant: Applied Materials, Inc.
Inventor: David Benjaminson , Ken Schatz , Dmitry Lubomirsky
IPC: H05B3/34 , H01L21/67 , H01L21/683
CPC classification number: H05B3/34 , H01L21/67103 , H01L21/6833 , H05B2203/013 , H05B2203/017
Abstract: A heater assembly for a substrate support assembly includes a flexible body. The heater assembly further includes one or more resistive heating elements disposed in the flexible body. The heater assembly further includes a first metal layer disposed on the top surface of the flexible body and extending at least partially onto an outer sidewall of the flexible body. The heater assembly further includes a second metal layer disposed on a bottom surface of the flexible body and extending at least partially onto the outer sidewall of the flexible body, wherein the second metal layer is coupled to the first metal layer at the outer sidewall of the flexible body such that the first metal layer and the second metal layer enclose, and form a continuous electrically conductive path around, the outer sidewall of the flexible body.
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公开(公告)号:US20180195179A1
公开(公告)日:2018-07-12
申请号:US15899234
申请日:2018-02-19
Applicant: Applied Materials, Inc.
Inventor: Benjamin Schmiege , Nitin K. Ingle , Srinivas D. Nemani , Jeffrey W. Anthis , Xikun Wang , Jie Liu , David Benjaminson
CPC classification number: C23F1/12 , C23F4/00 , C30B33/12 , H01J37/32009 , H01J2237/334
Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.
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15.
公开(公告)号:US09540736B2
公开(公告)日:2017-01-10
申请号:US14793977
申请日:2015-07-08
Applicant: Applied Materials, Inc.
Inventor: Benjamin Schmiege , Nitin K. Ingle , Srinivas D. Nemani , Jeffrey W. Anthis , Xikun Wang , Jie Liu , David Benjaminson
CPC classification number: C23F1/12 , C23F4/00 , C30B33/12 , H01J37/32009 , H01J2237/334
Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.
Abstract translation: 提供了用于蚀刻包含过渡金属的膜的方法,其有助于最小化在多晶材料的晶界处的较高蚀刻速率。 某些方法涉及多晶材料的非晶化,其它方法涉及等离子体处理,而另一些方法涉及在蚀刻工艺中使用小剂量的卤化物转移剂。
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公开(公告)号:US20160032460A1
公开(公告)日:2016-02-04
申请号:US14793977
申请日:2015-07-08
Applicant: Applied Materials, Inc.
Inventor: Benjamin Schmiege , Nitin K. Ingle , Srinivas D. Nemani , Jeffrey W. Anthis , Xikun Wang , Jie Liu , David Benjaminson
CPC classification number: C23F1/12 , C23F4/00 , C30B33/12 , H01J37/32009 , H01J2237/334
Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.
Abstract translation: 提供了用于蚀刻包含过渡金属的膜的方法,其有助于最小化在多晶材料的晶界处的较高蚀刻速率。 某些方法涉及多晶材料的非晶化,其它方法涉及等离子体处理,而另一些方法涉及在蚀刻工艺中使用小剂量的卤化物转移剂。
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公开(公告)号:US11062887B2
公开(公告)日:2021-07-13
申请号:US16132806
申请日:2018-09-17
Applicant: APPLIED MATERIALS, INC.
Inventor: Soonam Park , David Benjaminson , Xikun Wang , Dmitry Lubomirsky
IPC: H01J37/32 , H01L21/687 , C23C16/458 , C23C16/455
Abstract: Semiconductor processing systems are described, which may include a substrate support assembly having a substrate support surface. Exemplary substrate support assemblies may include a ceramic heater defining the substrate support surface. The assemblies may include a ground plate on which the ceramic heater is seated. The assemblies may include a stem with which the ground plate is coupled. The assemblies may include an electrode embedded within the ceramic heater at a depth from the substrate support surface. The chambers or systems may also include an RF match configured to provide an AC current and an RF power through the stem to the electrode. The RF match may be coupled with the substrate support assembly along the stem. The substrate support assembly and RF match may be vertically translatable within the semiconductor processing system.
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公开(公告)号:US11049755B2
公开(公告)日:2021-06-29
申请号:US16131972
申请日:2018-09-14
Applicant: Applied Materials, Inc.
Inventor: David Benjaminson , Michael Grace , Soonam Park , Dmitry Lubomirsky , Jaeyong Cho , Nikolai Kalnin , Don Channa K Kaluarachchi
IPC: H01L21/683 , H01L21/67 , H01J37/32
Abstract: Exemplary support assemblies may include a top puck defining a substrate support surface, where the top puck is also characterized by a height. The assemblies may include a stem coupled with the top puck on a second surface of the top puck opposite the substrate support surface. The assemblies may include an RF electrode embedded within the top puck proximate the substrate support surface. The assemblies may include a heater embedded within the top puck. The assemblies may also include a ground shield embedded within the top puck. The ground shield may be characterized by an inner region extending radially through the top puck. The ground shield may further be characterized by an outer region extending perpendicular to the inner region.
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公开(公告)号:US10607867B2
公开(公告)日:2020-03-31
申请号:US16209581
申请日:2018-12-04
Applicant: Applied Materials, Inc.
Inventor: David Benjaminson , Dmitry Lubomirsky , Ananda Seelavanth Math , Saravanakumar Natarajan , Shubham Chourey
IPC: H01L21/00 , H01L21/67 , H01L21/687 , H01L21/324 , H01J37/32
Abstract: A workpiece holder includes a puck, first and second heating devices in thermal communication with respective inner and outer portions of the puck, and a thermal sink in thermal communication with the puck. The first and second heating devices are independently controllable, and the first and second heating devices are in greater thermal communication with the puck, than thermal communication of the thermal sink with the puck. A method of controlling temperature distribution of a workpiece includes flowing a heat exchange fluid through a thermal sink to establish a reference temperature to a puck, raising temperatures of radially inner and outer portions of the puck to first and second temperatures greater than the reference temperature, by activating respective first and second heating devices disposed in thermal communication with the radially inner and outer portions of the puck, and placing the workpiece on the puck.
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公开(公告)号:US20200090972A1
公开(公告)日:2020-03-19
申请号:US16131972
申请日:2018-09-14
Applicant: Applied Materials, Inc.
Inventor: David Benjaminson , Michael Grace , Soonam Park , Dmitry Lubomirsky , Jaeyong Cho , Nikolai Kalnin , Don Channa K. Kaluarachchi
IPC: H01L21/683 , H01L21/67 , H01J37/32
Abstract: Exemplary support assemblies may include a top puck defining a substrate support surface, where the top puck is also characterized by a height. The assemblies may include a stem coupled with the top puck on a second surface of the top puck opposite the substrate support surface. The assemblies may include an RF electrode embedded within the top puck proximate the substrate support surface. The assemblies may include a heater embedded within the top puck. The assemblies may also include a ground shield embedded within the top puck. The ground shield may be characterized by an inner region extending radially through the top puck. The ground shield may further be characterized by an outer region extending perpendicular to the inner region.
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